Showing 1–6 of 6 results for author: Kosel, J

Domain Wall Propagation and Pinning Induced by Current Pulses in Cylindrical Modulated Nanowires

Authors: C. Bran, J. A. Fernandez-Roldan, J. A. Moreno, A. Fraile Rodríguez, R. P. del Real, A. Asenjo, E. Saugar, J. Marqués-Marchán, H. Mohammed, M. Foerster, L. Aballe, J. Kosel, M. Vazquez, O. Chubykalo-Fesenko

Abstract: The future developments of three-dimensional magnetic nanotechnology require the control of domain wall dynamics by means of current pulses. While this has been extensively studied in planar magnetic strips (planar nanowires), few reports exist in cylindrical geometry, where Bloch point domain walls are expected to have intriguing properties. Here we report this investigation in cylindrical magnet… ▽ More The future developments of three-dimensional magnetic nanotechnology require the control of domain wall dynamics by means of current pulses. While this has been extensively studied in planar magnetic strips (planar nanowires), few reports exist in cylindrical geometry, where Bloch point domain walls are expected to have intriguing properties. Here we report this investigation in cylindrical magnetic Ni nanowires with geometrical notches. Experimental work based on synchrotron X-ray magnetic circular dichroism (XMCD) combined with photoemission electron microscopy (PEEM) indicates that large current densities induce domain wall nucleation while smaller currents move domain walls preferably against the current direction. In the region where no pinning centers are present we found domain wall velocity of about 1 km/s. The domain wall motion along current was also detected in the vicinity of the notch region. Pinning of domain walls has been observed not only at geometrical constrictions but also outside of them. Thermal modelling indicates that large current densities temporarily raise the temperature in the nanowire above the Curie temperature leading to nucleation of domain walls during the system cooling. Micromagnetic modelling with spin-torque effect shows that for intermediate current densities Bloch point domain walls with chirality parallel to the Oersted field propagate antiparallel to the current direction. In other cases, domain walls can be bounced from the notches and/or get pinned outside their positions. We thus find that current is not only responsible for the domain wall propagation but is also a source of pinning due to the Oersted field action. △ Less

Submitted 4 October, 2022; originally announced October 2022.

Controlled spin-torque driven domain wall motion using staggered magnetic nanowires

Authors: H. Mohammed, S. Al Risi, T. L. Jin3 J. Kosel, S. N. Piramanayagam, R. Sbiaa

Abstract: The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of domain wall positions and their motion using spin-transfer torque are important challenges. In this paper, we demonstrate controlled domain wall motion using sp… ▽ More The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of domain wall positions and their motion using spin-transfer torque are important challenges. In this paper, we demonstrate controlled domain wall motion using spin-transfer torque in staggered magnetic nanowires. The devices, fabricated using electron-beam lithography, were tested using a magneto-optical Kerr microscopy and electrical transport measurements. The depinning current, pinning potential and thermal stability were found to depend on the device dimensions of the staggering nanowires. Thus, the proposed staggering configuration helps to fine-tune the properties of domain wall devices for memory applications. △ Less

Submitted 25 August, 2019; originally announced August 2019.

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

Authors: Hanan Mohammed, Hector Corte-León, Yurii P. Ivanov, Sergei Lopatin, Julian A. Moreno, Andrey Chuvilin, Akshaykumar Salimath, Aurelien Manchon, Olga Kazakova, Jurgen Kosel

Abstract: A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domai… ▽ More A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires. △ Less

Submitted 18 April, 2018; originally announced April 2018.

High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

Authors: Selma. Amara, Gallo. A. Torres Sevilla, Mayyada. Hawsawi, Yousof. Mashraei, Hanan . Mohammed, Melvin E. Cruz, Yurii. P. Ivanov, Samridh. Jaiswal, Gerhard. Jakob, Mathias. Kläui, Muhammad. Hussain, Jurgen. Kosel

Abstract: Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized instruments, where size and weight are critical parameters. Given their prevalence on the sensors market, flexible magnetic sensors play a major role in this prog… ▽ More Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized instruments, where size and weight are critical parameters. Given their prevalence on the sensors market, flexible magnetic sensors play a major role in this progress. For many high-performance applications, magnetic tunnel junctions (MTJs) have become the first choice, due to their high sensitivity, low power consumption etc. MTJs are also promising candidates for non-volatile next-generation data storage media and, hence, could become central components of wearable electronic devices. In this work, a generic low-cost regenerative batch fabrication process is utilized to transform rigid MTJs on a 500 μm silicon wafer substrate into 5 μm thin, mechanically flexible silicon devices, and ensuring optimal utilization of the whole substrate. This method maintains the outstanding magnetic properties, which are only obtained by deposition of the MTJ on smooth high-quality silicon wafers. The flexible MTJs are highly reliable and resistive to mechanical stress. Bending of the MTJ stacks with a diameter as small as 500 μm is possible without compromising their performance and an endurance of over 1000 cycles without fatigue has been demonstrated. The flexible MTJs were mounted onto the tip of a cardiac catheter with 2 mm in diameter without compromising their performance. This enables the detection of magnetic fields and the angle which they are applied at with a high sensitivity of 4.93 %/Oe and a low power consumption of 0.15 μW, while adding only 8 μg and 15 μm to the weight and diameter of the catheter, respectively. △ Less

Submitted 4 April, 2018; originally announced April 2018.

Comments: 20 pages, 6 figures, Intermag 2018

Magnon mode selective spin transport in compensated ferrimagnets

Authors: Joel Cramer, Er-Jia Guo, Stephan Geprägs, Andreas Kehlberger, Yurii P. Ivanov, Kathrin Ganzhorn, Francesco Della Coletta, Matthias Althammer, Hans Huebl, Rudolf Gross, Jürgen Kosel, Mathias Kläui, Sebastian T. B. Goennenwein

Abstract: We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a non-monotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of t… ▽ More We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a non-monotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify the magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. The comparison of selected systems reveals semi-quantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal. △ Less

Submitted 10 March, 2017; v1 submitted 9 March, 2017; originally announced March 2017.

Geometrically Enhanced Quantum Oscillatory Signal and Nonzero Berry's Phase in Indium Arsenide Surface

Authors: Jian Sun, Xuhui Wang, Sadamichi Maekawa, Aurelien Manchon, Jurgen Kosel

Abstract: In a system accommodating both surface and bulk conduction channels, a long-standing challenge is to extract weak Shubnikov-de Haas oscillation signal in the surface from a large background stemming from the bulk. Conventional methods to suppress the bulk conduction often involve doping, an intrusive approach, to reduce the bulk carrier density. Here we propose a geometric method, i.e. attaching a… ▽ More In a system accommodating both surface and bulk conduction channels, a long-standing challenge is to extract weak Shubnikov-de Haas oscillation signal in the surface from a large background stemming from the bulk. Conventional methods to suppress the bulk conduction often involve doping, an intrusive approach, to reduce the bulk carrier density. Here we propose a geometric method, i.e. attaching a metal shunt to the indium arsenide epilayer, to redistribute current and thus enhance the oscillation-to-background ratio. This allows us, for the first time, to observe clear quantum oscillations and nonzero Berry's phase at the surface of indium arsenide. We also identify the existence of a Rashba type spin-orbit interaction, on the InAs surface, with a large coupling constant ~ 1 eVA. We anticipate wide applicability of this non-intrusive architecture in similar systems such as topological insulators. △ Less

Submitted 19 March, 2015; originally announced March 2015.

Comments: 5 pages, 3 figures