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Four-point probe measurements using current probes with voltage feedback to measure electric potentials
Authors:
F. Lüpke,
D. Cuma,
S. Korte,
V. Cherepanov,
B. Voigtländer
Abstract:
We present a four-point probe resistance measurement technique which uses four equivalent current measuring units, resulting in minimal hardware requirements and corresponding sources of noise. Local sample potentials are measured by a software feedback loop which adjusts the corresponding tip voltage such that no current flows to the sample. The resulting tip voltage is then equivalent to the sam…
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We present a four-point probe resistance measurement technique which uses four equivalent current measuring units, resulting in minimal hardware requirements and corresponding sources of noise. Local sample potentials are measured by a software feedback loop which adjusts the corresponding tip voltage such that no current flows to the sample. The resulting tip voltage is then equivalent to the sample potential at the tip position. We implement this measurement method into a multi-tip scanning tunneling microscope setup such that potentials can also be measured in tunneling contact, allowing in principle truly non-invasive four-probe measurements. The resulting measurement capabilities are demonstrated for BiSbTe$_3$ and Si$(111)-(7\times7)$ samples.
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Submitted 13 December, 2017; v1 submitted 7 September, 2017;
originally announced September 2017.
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Surface Conductivity of Si(100) and Ge(100) Surfaces Determined from Four-Point Transport Measurements Using an Analytical N-Layer Conductance Model
Authors:
Sven Just,
Helmut Soltner,
Stefan Korte,
Vasily Cherepanov,
Bert Voigtländer
Abstract:
An analytical N-layer model for charge transport close to a surface is derived from the solution of Poisson's equation and used to describe distance-dependent electrical four-point measurements on the microscale. As the N-layer model comprises a surface channel, multiple intermediate layers and a semi-infinite bulk, it can be applied to semiconductors in combination with a calculation of the near-…
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An analytical N-layer model for charge transport close to a surface is derived from the solution of Poisson's equation and used to describe distance-dependent electrical four-point measurements on the microscale. As the N-layer model comprises a surface channel, multiple intermediate layers and a semi-infinite bulk, it can be applied to semiconductors in combination with a calculation of the near-surface band-bending to model very precisely the measured four-point resistance on the surface of a specific sample and to extract a value for the surface conductivity. For describing four-point measurements on sample geometries with mixed 2D-3D conduction channels often a very simple parallel-circuit model has so far been used in the literature, but the application of this model is limited, as there are already significant deviations, when it is compared to the lowest possible case of the N-layer model, i.e. the 3-layer model. Furthermore, the N-layer model is applied to published distance-dependent four-point resistance measurements obtained with a multi-tip scanning tunneling microscope (STM) on Germanium(100) and Silicon(100) with different bulk doping concentrations resulting in the determination of values for the surface conductivities of these materials.
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Submitted 7 October, 2016;
originally announced October 2016.
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Scanning tunneling potentiometry implemented into a multi-tip setup by software
Authors:
F. Lüpke,
S. Korte,
V. Cherepanov,
B. Voigtländer
Abstract:
We present a multi-tip scanning tunneling potentiometry technique that can be implemented into existing multi-tip scanning tunneling microscopes without hardware changes. The resulting setup allows flexible in situ contacting of samples under UHV conditions and subsequent measurement of the sample topography and local electric potential with resolution down to Å and μV, respectively. The performan…
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We present a multi-tip scanning tunneling potentiometry technique that can be implemented into existing multi-tip scanning tunneling microscopes without hardware changes. The resulting setup allows flexible in situ contacting of samples under UHV conditions and subsequent measurement of the sample topography and local electric potential with resolution down to Å and μV, respectively. The performance of the potentiometry feedback is demonstrated by thermovoltage measurements on the Ag/Si$(111)-(\sqrt3\times\sqrt3)\rm R30^{\circ}$ surface by resolving a standing wave pattern. Subsequently, the ability to map the local transport field as a result of a lateral current through the sample surface is shown on Ag/Si$(111)-(\sqrt3\times\sqrt3)\rm R30^{\circ}$ and Si$(111)-(7\times7)$ surfaces.
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Submitted 7 December, 2015; v1 submitted 31 August, 2015;
originally announced August 2015.
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Surface and Step Conductivities on Si(111) Surfaces
Authors:
Sven Just,
Marcus Blab,
Stefan Korte,
Vasily Cherepanov,
Helmut Soltner,
Bert Voigtländer
Abstract:
Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from non-surface c…
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Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from non-surface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as function of the rotation angle. In total this combined approach leads to an atomic step conductivity of $σ_\mathrm{step} = (29 \pm 9)$ $\mathrmΩ^{-1} \mathrm{m}^{-1}$ and to a step-free surface conductivity of $σ_\mathrm{surf} = (9 \pm 2) \cdot 10^{-6}\,\mathrmΩ^{-1}/\square$ for the Si(111)-(7$\times$7) surface.
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Submitted 6 May, 2015;
originally announced May 2015.
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Etched graphene quantum dots on hexagonal boron nitride
Authors:
S. Engels,
A. Epping,
C. Volk,
S. Korte,
B. Voigtländer,
K. Watanabe,
T. Taniguchi,
S. Trellenkamp,
C. Stampfer
Abstract:
We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on Si…
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We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.
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Submitted 9 August, 2013;
originally announced August 2013.
