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Two-Photon Excitation Spectroscopy of Silicon Quantum Dots and Ramifications for Bio-Imaging
Authors:
Brandon J. Furey,
Benjamin J. Stacy,
Tushti Shah,
Rodrigo M. Barba-Barba,
Ramon Carriles,
Alan Bernal,
Bernardo S. Mendoza,
Brian A. Korgel,
Michael C. Downer
Abstract:
Two-photon excitation in the near-infrared (NIR) of colloidal nanocrystalline silicon quantum dots (nc-SiQDs) with photoluminescence also in the NIR has the potential to open up new opportunities in the field of deep biological imaging. Spectra of the degenerate two-photon absorption (2PA) cross section of colloidal nc-SiQDs are measured using two-photon excitation over a spectral range…
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Two-photon excitation in the near-infrared (NIR) of colloidal nanocrystalline silicon quantum dots (nc-SiQDs) with photoluminescence also in the NIR has the potential to open up new opportunities in the field of deep biological imaging. Spectra of the degenerate two-photon absorption (2PA) cross section of colloidal nc-SiQDs are measured using two-photon excitation over a spectral range $1.46 < \hbar ω< 1.91$ eV (wavelength $850 > λ> 650$ nm) above the two-photon band gap $E_g^{(QD)}/2$, and at a representative photon energy $\hbar ω= 0.99$ eV ($λ= 1250$ nm) below this gap. Two-photon excited photoluminescence (2PE-PL) spectra of nc-SiQDs with diameters $d = 1.8 \pm 0.2$ and $d = 2.3 \pm 0.3$ nm, each passivated with 1-dodecene and dispersed in toluene, are calibrated in strength against 2PE-PL from a known concentration of Rhodamine B dye in methanol. The 2PA cross section is observed to be smaller for the smaller diameter nanocrystals and the onset of 2PA is observed to be blueshifted from the two-photon indirect band gap of bulk Si, as expected for quantum confinement of excitons. The efficiencies of nc-SiQDs for bio-imaging using 2PE-PL are simulated in various biological tissues and compared to other quantum dots and molecular fluorophores and found to be superior at greater depths.
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Submitted 1 April, 2022; v1 submitted 22 December, 2021;
originally announced December 2021.
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Suppressing Material Loss for Functional Nanophotonics Using Bandgap Engineering
Authors:
Mingsong Wang,
Alex Krasnok,
Sergey Lepeshov,
Guangwei Hu,
Taizhi Jiang,
Jie Fang,
Brian A. Korgel,
Andrea Alù,
Yuebing Zheng
Abstract:
All-dielectric nanoantennas have recently opened exciting opportunities for functional nanophotonics, owing to their strong optical resonances along with low material loss in the near-infrared range. Pushing these concepts to the visible range is hindered by a larger absorption coefficient of Si and other high-index semiconductors, thus encouraging the search for alternative dielectrics for nanoph…
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All-dielectric nanoantennas have recently opened exciting opportunities for functional nanophotonics, owing to their strong optical resonances along with low material loss in the near-infrared range. Pushing these concepts to the visible range is hindered by a larger absorption coefficient of Si and other high-index semiconductors, thus encouraging the search for alternative dielectrics for nanophotonics. In this paper, we employ bandgap engineering to synthesize hydrogenated amorphous Si nanoparticles (a-Si:H NPs) offering ideal features for functional nanophotonics. We observe significant material loss suppression in a-Si:H NPs in the visible range caused by hydrogenation-induced bandgap renormalization, producing resonant modes in single a-Si:H NPs with Q factors up to ~100, in the visible and near-IR range for the first time. In order to demonstrate light-matter interaction enhancement, we realize highly tunable all-dielectric nanoantennas coupling them to photochromic spiropyran (SP) molecules. We show ~70% reversible all-optical tuning of light scattering at the high-Q resonant mode, along with minor tunability when out of resonance. This remarkable all-optical tuning effect is achieved under a low incident light intensity ~3.8 W/cm2 for UV light and ~1.1*10^2 W/cm2 for green light.
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Submitted 10 December, 2019;
originally announced December 2019.
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Tunable Resonance Coupling in Single Si Nanoparticle-Monolayer WS2 Structures
Authors:
Sergey Lepeshov,
Mingsong Wang,
Alex Krasnok,
Oleg Kotov,
Tianyi Zhang,
He Liu,
Taizhi Jiang,
Brian Korgel,
Mauricio Terrones,
Yuebing Zheng,
Andrea Alú
Abstract:
Two-dimensional semiconducting transition metal dichalcogenides (TMDCs) are extremely attractive materials for optoelectronic applications in the visible and near-IR range. Here, we address for the first time to the best of our knowledge the issue of resonance coupling in hybrid exciton-polariton structures based on single Si nanoparticles coupled to monolayer WS2. We predict a transition from wea…
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Two-dimensional semiconducting transition metal dichalcogenides (TMDCs) are extremely attractive materials for optoelectronic applications in the visible and near-IR range. Here, we address for the first time to the best of our knowledge the issue of resonance coupling in hybrid exciton-polariton structures based on single Si nanoparticles coupled to monolayer WS2. We predict a transition from weak to strong coupling regime , with a Rabi splitting energy exceeding 200 meV for a Si nanoparticle covered by monolayer WS 2 at the magnetic optical Mie resonance. This large transition is achieved due to the symmetry of magnetic dipole Mie mode and by changing the surrounding dielectric material from air to water. The prediction is based on the experimental estimation of TMDC dipole moment variation obtained from measured photoluminescence (PL) spectra of WS2 monolayers in different solvents. An ability of such a system to tune the resonance coupling is realized experimentally for optically resonant spherical Si nanoparticles placed on a WS2 monolayer. The Rabi splitting energy obtained for this scenario increases from 49.6 meV to 86.6 meV after replacing air by water. Our findings pave the way to develop high-efficiency optoelectronic, nanophotonic and quantum optical devices.
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Submitted 26 October, 2017;
originally announced October 2017.
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Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires
Authors:
M. Golam Rabbani,
Sunil R. Patil,
Amit Verma,
Julian E. Villarreal,
Brian A. Korgel,
Reza Nekovei,
Mahmoud M. Khader,
R. B. Darling,
M. P. Anantram
Abstract:
Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for visible light, a clear evidence of the zero-biased optoelectronic switching in randomly dispersed Ge and Si NW networks. The test bench, on which the NWs were dispersed for optoelectronic characterization, was fabricated us…
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Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for visible light, a clear evidence of the zero-biased optoelectronic switching in randomly dispersed Ge and Si NW networks. The test bench, on which the NWs were dispersed for optoelectronic characterization, was fabricated using standard CMOS fabrication process, and utilized metal contacts with dissimilar work functions - Al and Ni. The randomly dispersed NWs respond to light by exhibiting substantial photocurrents and, most remarkably, demonstrate zero-bias photo-switching. The magnitude of the photocurrent is dependent on the NW material, as well as the channel length. The photocurrent in randomly dispersed GeNWs was found to be higher by orders of magnitude compared to SiNWs. In both of these material systems, when the length of the NWs was comparable to the channel length, the currents in sparse NW networks were found to be higher than that in dense NW networks, which can be explained by considering various possible arrangements of NWs in these devices.
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Submitted 12 March, 2017;
originally announced March 2017.
