The complete micromagnetic characterization of asymmetrically sandwiched ferromagnetic films
Authors:
M. Kopte,
U. K. Rößler,
R. Schäfer,
T. Kosub,
A. Kákay,
O. Volkov,
H. Fuchs,
E. Y. Vedmedenko,
F. Radu,
O. G. Schmidt,
J. Lindner,
J. Faßbender,
D. Makarov
Abstract:
The magnetic properties of ferromagnetic thin films down to the nanoscale are ruled by the exchange stiffness, anisotropies and the effects of magnetic fields. As surfaces break inversion symmetry, an additional effective chiral exchange is omnipresent in any magnetic nanostructure. These so-called Dzyaloshinskii-Moriya interactions (DMI) affect all inhomogeneous magnetic states either subtly or s…
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The magnetic properties of ferromagnetic thin films down to the nanoscale are ruled by the exchange stiffness, anisotropies and the effects of magnetic fields. As surfaces break inversion symmetry, an additional effective chiral exchange is omnipresent in any magnetic nanostructure. These so-called Dzyaloshinskii-Moriya interactions (DMI) affect all inhomogeneous magnetic states either subtly or spectacularly. E.g., DMIs cause a chirality selection of the rotation sense and can fix the local rotation axis for the magnetization in domain walls (DW). But, they can stabilize also entirely different twisted magnetic structures. The chiral skyrmions a two-dimensional particle-like topological soliton is the ultimately smallest of these objects, which currently is targetted as a possible information carrier in novel spintronic devices. Observation and quantification of the chiral exchange effects provide for the salient point in understanding magnetic properties in ultrathin films and other nanostructures. An easy and reliable method to determine the DMI constant as materials parameter of asymmetric thin films is the crucial problem. Here, we put forth an experimental approach for the determination of the complete set of the micromagnetic parameters. Quasi-static Kerr microcopy observations of DW creep motion and equilibrium sizes of circular magnetic objects in combination with standard magnetometry are used to derive a consistent set of these materials parameters in polycrystalline ultrathin film systems, namely CrOx/Co/Pt stacks. The quantified micromagnetic model for these films identifies the circular magnetic objects, as seen by the optical microscopy, as ordinary bubble domains with homochiral walls. From micromagnetic calculations, the chiral skyrmions stabilized by the DMI in these films are shown to have diameters in the range 40-200nm, too small to be observed by optical microscopy.
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Submitted 19 October, 2017; v1 submitted 28 June, 2017;
originally announced June 2017.
Purely Antiferromagnetic Magnetoelectric Random Access Memory
Authors:
Tobias Kosub,
Martin Kopte,
Ruben Hühne,
Patrick Appel,
Brendan Shields,
Patrick Maletinsky,
René Hübner,
Maciej Oskar Liedke,
Jürgen Fassbender,
Oliver G. Schmidt,
Denys Makarov
Abstract:
Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50 fold reduction of the writing threshold compared to ferromagnet-based counterparts, is robust against magnetic disturbances and ex…
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Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50 fold reduction of the writing threshold compared to ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes of these novel systems, we construct a comprehensive model of the magnetoelectric selection mechanism in thin films of magnetoelectric antiferromagnets. We identify that growth induced effects lead to emergent ferrimagnetism, which is detrimental to the robustness of the storage. After pinpointing lattice misfit as the likely origin, we provide routes to enhance or mitigate this emergent ferrimagnetism as desired. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in purely antiferromagnetic spintronics devices.
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Submitted 21 November, 2016;
originally announced November 2016.
