Showing 1–8 of 8 results for author: Koppinen, P J

Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices

Authors: P. J. Koppinen, M. D. Stewart, Jr., Neil M. Zimmerman

Abstract: We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and… ▽ More We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabrication. △ Less

Submitted 13 June, 2012; originally announced June 2012.

Comments: 7 pages, 7 figures

Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

Authors: C. Payette, K. Wang, P. J. Koppinen, Y. Dovzhenko, J. C. Sturm, J. R. Petta

Abstract: We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 X 10^{11}/cm^2 and mobilities in excess of 100,000 cm^2/Vs. Double quantum dot devices fabricated on… ▽ More We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 X 10^{11}/cm^2 and mobilities in excess of 100,000 cm^2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime. △ Less

Submitted 21 March, 2012; v1 submitted 13 December, 2011; originally announced December 2011.

Comments: Related papers at http://pettagroup.princeton.edu

Journal ref: Appl. Phys. Lett. 100, 043508 (2012)

Strain sensing with sub-micron sized Al-AlOx-Al tunnel junctions

Authors: P. J. Koppinen, J. T. Lievonen, M. Ahlskog, I. J. Maasilta

Abstract: We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlOx barriers. The junctions were fabricated on top of a thin silicon nitride membrane, which was actuated with an AFM tip attached to a stiff cantilever. A large relative change in the tunneling resistance in response to the applied strain (gauge factor) was observed, up to a value 37. Thi… ▽ More We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlOx barriers. The junctions were fabricated on top of a thin silicon nitride membrane, which was actuated with an AFM tip attached to a stiff cantilever. A large relative change in the tunneling resistance in response to the applied strain (gauge factor) was observed, up to a value 37. This facilitates local static strain variation measurements down to ~10^{-7}. △ Less

Submitted 23 June, 2009; originally announced June 2009.

Comments: 4 pages, 3 figures

Cooling of suspended nanostructures with tunnel junctions

Authors: P. J. Koppinen, I. J. Maasilta

Abstract: We have investigated electronic cooling of suspended nanowires with SINIS tunnel junction coolers. The suspended samples consist of a free standing nanowire suspended by four narrow ($\sim$ 200 nm) bridges. We have compared two different cooler designs for cooling the suspended nanowire. We demonstrate that cooling of the nanowire is possible with a proper SINIS cooler design. We have investigated electronic cooling of suspended nanowires with SINIS tunnel junction coolers. The suspended samples consist of a free standing nanowire suspended by four narrow ($\sim$ 200 nm) bridges. We have compared two different cooler designs for cooling the suspended nanowire. We demonstrate that cooling of the nanowire is possible with a proper SINIS cooler design. △ Less

Submitted 20 January, 2009; originally announced January 2009.

Journal ref: J. Phys.: Conf. Ser. 150, 012025 (2009).

Phonon cooling of nanomechanical beams with tunnel junctions

Authors: P. J. Koppinen, I. J. Maasilta

Abstract: We demonstrate electronic cooling of 1D phonon modes in suspended nanowires for the first time, using normal metal--insulator--superconductor (NIS) tunnel junctions. Simultaneous cooling of both electrons and phonons to a common temperature was achieved. In comparison with non-suspended devices, better cooling performance is achieved in the whole operating range of bath temperatures between 0.1-… ▽ More We demonstrate electronic cooling of 1D phonon modes in suspended nanowires for the first time, using normal metal--insulator--superconductor (NIS) tunnel junctions. Simultaneous cooling of both electrons and phonons to a common temperature was achieved. In comparison with non-suspended devices, better cooling performance is achieved in the whole operating range of bath temperatures between 0.1-0.7 K. The observed low-temperature thermal transport characteristics are consistent with scattering of ballistic phonons at the nanowire-bulk contact as being the mechanism limiting thermal transport. At the lowest bath temperature of the experiment $\sim$ 100 mK, both phonons and electrons in the beam were cooled down to 42 mK, which is below the refrigerator bath temperature. △ Less

Submitted 11 May, 2009; v1 submitted 19 January, 2009; originally announced January 2009.

Journal ref: Phys. Rev. Lett. 102, 165502 (2009)

Effects of charging energy on SINIS tunnel junction thermometry

Authors: P. J. Koppinen, T. Kühn, I. J. Maasilta

Abstract: We have investigated theoretically the effects of the charging energy to the normal metal--insulator--superconductor (NIS) tunnel junction used as a thermometer. We demonstrate by numerical calculations how the charging effects modify NIS thermometry, and how the voltage--to--temperature response and the responsivity $|dV/dT|$ of a current biased thermometer are affected. In addition, we show th… ▽ More We have investigated theoretically the effects of the charging energy to the normal metal--insulator--superconductor (NIS) tunnel junction used as a thermometer. We demonstrate by numerical calculations how the charging effects modify NIS thermometry, and how the voltage--to--temperature response and the responsivity $|dV/dT|$ of a current biased thermometer are affected. In addition, we show that the responsivity of the thermometer can be modulated with an additional gate electrode. The maximum responsivity is achieved when the Coulomb blockade is maximal, i.e. with a closed gate. △ Less

Submitted 16 April, 2009; v1 submitted 3 November, 2008; originally announced November 2008.

Comments: 12 pages, 7 figures

Journal ref: J. Low Temp. Phys. 154, 179 (2009)

Complete stabilization and improvement of the characteristics of tunnel junctions by thermal annealing

Authors: P. J. Koppinen, L. M. Väistö, I. J. Maasilta

Abstract: We have observed that submicron sized Al--AlO{$_x$}--Al tunnel junctions can be stabilized completely by annealing them in vacuum at temperatures between $350^{\circ}$C and $450^{\circ}$C. In addition, low temperature characterization of the samples after the annealing treatment showed a marked improvement of the tunneling characteristics due to disappearance of unwanted resonances in the curren… ▽ More We have observed that submicron sized Al--AlO{$_x$}--Al tunnel junctions can be stabilized completely by annealing them in vacuum at temperatures between $350^{\circ}$C and $450^{\circ}$C. In addition, low temperature characterization of the samples after the annealing treatment showed a marked improvement of the tunneling characteristics due to disappearance of unwanted resonances in the current. Charging energy, tunneling resistance, barrier thickness and height all increase after the treatment. The superconducting gap is not affected, but supercurrent is reduced in accordance with the increase of tunneling resistance. △ Less

Submitted 27 November, 2006; originally announced November 2006.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 90, 053503 (2007)

Discrete saturation thickness and anomalous potential height of native ultrathin aluminum oxide tunnel barriers

Authors: K. Gloos, P. J. Koppinen, J. P. Pekola

Abstract: We have investigated planar metal - insulator - metal tunnel junctions with aluminum oxide as dielectricum. These oxide barriers were grown on an aluminum electrode in pure oxygen at room temperature till saturation. We observed discrete barrier widths separated by Δs \approx 0.38 nm, corresponding to the addition of one layer of oxygen atoms. The minimum thickness of s_0 \approx 0.54 nm is due… ▽ More We have investigated planar metal - insulator - metal tunnel junctions with aluminum oxide as dielectricum. These oxide barriers were grown on an aluminum electrode in pure oxygen at room temperature till saturation. We observed discrete barrier widths separated by Δs \approx 0.38 nm, corresponding to the addition of one layer of oxygen atoms. The minimum thickness of s_0 \approx 0.54 nm is due to a double layer of oxygen. We found a strong and systematic dependence of the barrier height Φ_0 on the thickness s like Φ_0 \approx 2.5 eV / s^2(nm), which nearly coincides with the kinetic electron energy E = h^2/2ms^2 for which the deBroglie wavelength matches the width of the barrier. △ Less

Submitted 26 May, 2001; originally announced May 2001.

Comments: 4 pages, 4 eps figures