Showing 1–12 of 12 results for author: Koppinen, P

Scalable on-chip multiplexing of silicon single and double quantum dots

Authors: Heorhii Bohuslavskyi, Alberto Ronzani, Joel Hätinen, Arto Rantala, Andrey Shchepetov, Panu Koppinen, Janne S. Lehtinen, Mika Prunnila

Abstract: Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers. For this goal, ultra-low-power on-chip cryogenic CMOS (cryo-CMOS) electronics for control, read-out, and interfacing of the qubits is an important milestone. W… ▽ More Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers. For this goal, ultra-low-power on-chip cryogenic CMOS (cryo-CMOS) electronics for control, read-out, and interfacing of the qubits is an important milestone. We report on-chip interfacing of tunable electron and hole QDs by a 64-channel cryo-CMOS multiplexer with less-than-detectable static power dissipation. We analyze charge noise and measure state-of-the-art addition energies and gate lever arm parameters in the QDs. We correlate low noise in QDs and sharp turn-on characteristics in cryogenic transistors, both fabricated with the same gate stack. Finally, we demonstrate that our hybrid quantum-CMOS technology provides a route to scalable interfacing of a large number of QD devices, enabling, for example, variability analysis and QD qubit geometry optimization, which are prerequisites for building large-scale silicon-based quantum computers. △ Less

Submitted 10 October, 2024; v1 submitted 25 August, 2022; originally announced August 2022.

Comments: accepted manuscript; 5 figures, 18 supplementary figures, and 1 table in supplementary materials

Journal ref: Communications Physics 7, 323 (2024)

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Authors: Jingyu Duan, Janne S. Lehtinen, Michael A. Fogarty, Simon Schaal, Michelle Lam, Alberto Ronzani, Andrey Shchepetov, Panu Koppinen, Mika Prunnila, Fernando Gonzalez-Zalba, John J. L. Morton

Abstract: We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to dem… ▽ More We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $μ$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon. △ Less

Submitted 29 September, 2020; originally announced September 2020.

Comments: 5 pages, 4 figures

Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices

Authors: P. J. Koppinen, M. D. Stewart, Jr., Neil M. Zimmerman

Abstract: We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and… ▽ More We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabrication. △ Less

Submitted 13 June, 2012; originally announced June 2012.

Comments: 7 pages, 7 figures

Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

Authors: C. Payette, K. Wang, P. J. Koppinen, Y. Dovzhenko, J. C. Sturm, J. R. Petta

Abstract: We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 X 10^{11}/cm^2 and mobilities in excess of 100,000 cm^2/Vs. Double quantum dot devices fabricated on… ▽ More We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 X 10^{11}/cm^2 and mobilities in excess of 100,000 cm^2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime. △ Less

Submitted 21 March, 2012; v1 submitted 13 December, 2011; originally announced December 2011.

Comments: Related papers at http://pettagroup.princeton.edu

Journal ref: Appl. Phys. Lett. 100, 043508 (2012)

Reduction of low-frequency 1/f noise in Al-AlOx-Al tunnel junctions by thermal annealing

Authors: Juhani Julin, Panu Koppinen, Ilari Maasilta

Abstract: We report that annealing Al-AlOx-Al tunnel junctions in a vacuum chamber at temperature of 400C reduces the characteristic 1/f noise in the junctions, in some cases by an order of magnitude. Both ultra high vacuum and high vacuum fabricated samples demonstrated a significant reduction in the 1/f noise level. Temperature dependence of the noise was studied between 4.2 and 340 Kelvin, with a linear… ▽ More We report that annealing Al-AlOx-Al tunnel junctions in a vacuum chamber at temperature of 400C reduces the characteristic 1/f noise in the junctions, in some cases by an order of magnitude. Both ultra high vacuum and high vacuum fabricated samples demonstrated a significant reduction in the 1/f noise level. Temperature dependence of the noise was studied between 4.2 and 340 Kelvin, with a linear dependence below 100 K, but a faster increase above. The results are consistent with a model where the density of charge trapping two level-systems within the tunneling barrier is reduced by the annealing process. △ Less

Submitted 7 October, 2010; v1 submitted 16 June, 2010; originally announced June 2010.

Journal ref: Appl. Phys. Lett. 97, 152501 (2010)

Strain sensing with sub-micron sized Al-AlOx-Al tunnel junctions

Authors: P. J. Koppinen, J. T. Lievonen, M. Ahlskog, I. J. Maasilta

Abstract: We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlOx barriers. The junctions were fabricated on top of a thin silicon nitride membrane, which was actuated with an AFM tip attached to a stiff cantilever. A large relative change in the tunneling resistance in response to the applied strain (gauge factor) was observed, up to a value 37. Thi… ▽ More We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlOx barriers. The junctions were fabricated on top of a thin silicon nitride membrane, which was actuated with an AFM tip attached to a stiff cantilever. A large relative change in the tunneling resistance in response to the applied strain (gauge factor) was observed, up to a value 37. This facilitates local static strain variation measurements down to ~10^{-7}. △ Less

Submitted 23 June, 2009; originally announced June 2009.

Comments: 4 pages, 3 figures

Cooling of suspended nanostructures with tunnel junctions

Authors: P. J. Koppinen, I. J. Maasilta

Abstract: We have investigated electronic cooling of suspended nanowires with SINIS tunnel junction coolers. The suspended samples consist of a free standing nanowire suspended by four narrow ($\sim$ 200 nm) bridges. We have compared two different cooler designs for cooling the suspended nanowire. We demonstrate that cooling of the nanowire is possible with a proper SINIS cooler design. We have investigated electronic cooling of suspended nanowires with SINIS tunnel junction coolers. The suspended samples consist of a free standing nanowire suspended by four narrow ($\sim$ 200 nm) bridges. We have compared two different cooler designs for cooling the suspended nanowire. We demonstrate that cooling of the nanowire is possible with a proper SINIS cooler design. △ Less

Submitted 20 January, 2009; originally announced January 2009.

Journal ref: J. Phys.: Conf. Ser. 150, 012025 (2009).

Phonon cooling of nanomechanical beams with tunnel junctions

Authors: P. J. Koppinen, I. J. Maasilta

Abstract: We demonstrate electronic cooling of 1D phonon modes in suspended nanowires for the first time, using normal metal--insulator--superconductor (NIS) tunnel junctions. Simultaneous cooling of both electrons and phonons to a common temperature was achieved. In comparison with non-suspended devices, better cooling performance is achieved in the whole operating range of bath temperatures between 0.1-… ▽ More We demonstrate electronic cooling of 1D phonon modes in suspended nanowires for the first time, using normal metal--insulator--superconductor (NIS) tunnel junctions. Simultaneous cooling of both electrons and phonons to a common temperature was achieved. In comparison with non-suspended devices, better cooling performance is achieved in the whole operating range of bath temperatures between 0.1-0.7 K. The observed low-temperature thermal transport characteristics are consistent with scattering of ballistic phonons at the nanowire-bulk contact as being the mechanism limiting thermal transport. At the lowest bath temperature of the experiment $\sim$ 100 mK, both phonons and electrons in the beam were cooled down to 42 mK, which is below the refrigerator bath temperature. △ Less

Submitted 11 May, 2009; v1 submitted 19 January, 2009; originally announced January 2009.

Journal ref: Phys. Rev. Lett. 102, 165502 (2009)

Effects of charging energy on SINIS tunnel junction thermometry

Authors: P. J. Koppinen, T. Kühn, I. J. Maasilta

Abstract: We have investigated theoretically the effects of the charging energy to the normal metal--insulator--superconductor (NIS) tunnel junction used as a thermometer. We demonstrate by numerical calculations how the charging effects modify NIS thermometry, and how the voltage--to--temperature response and the responsivity $|dV/dT|$ of a current biased thermometer are affected. In addition, we show th… ▽ More We have investigated theoretically the effects of the charging energy to the normal metal--insulator--superconductor (NIS) tunnel junction used as a thermometer. We demonstrate by numerical calculations how the charging effects modify NIS thermometry, and how the voltage--to--temperature response and the responsivity $|dV/dT|$ of a current biased thermometer are affected. In addition, we show that the responsivity of the thermometer can be modulated with an additional gate electrode. The maximum responsivity is achieved when the Coulomb blockade is maximal, i.e. with a closed gate. △ Less

Submitted 16 April, 2009; v1 submitted 3 November, 2008; originally announced November 2008.

Comments: 12 pages, 7 figures

Journal ref: J. Low Temp. Phys. 154, 179 (2009)

Complete stabilization and improvement of the characteristics of tunnel junctions by thermal annealing

Authors: P. J. Koppinen, L. M. Väistö, I. J. Maasilta

Abstract: We have observed that submicron sized Al--AlO{$_x$}--Al tunnel junctions can be stabilized completely by annealing them in vacuum at temperatures between $350^{\circ}$C and $450^{\circ}$C. In addition, low temperature characterization of the samples after the annealing treatment showed a marked improvement of the tunneling characteristics due to disappearance of unwanted resonances in the curren… ▽ More We have observed that submicron sized Al--AlO{$_x$}--Al tunnel junctions can be stabilized completely by annealing them in vacuum at temperatures between $350^{\circ}$C and $450^{\circ}$C. In addition, low temperature characterization of the samples after the annealing treatment showed a marked improvement of the tunneling characteristics due to disappearance of unwanted resonances in the current. Charging energy, tunneling resistance, barrier thickness and height all increase after the treatment. The superconducting gap is not affected, but supercurrent is reduced in accordance with the increase of tunneling resistance. △ Less

Submitted 27 November, 2006; originally announced November 2006.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 90, 053503 (2007)

Ion beam sputtering method for progressive reduction of nanostructures dimensions

Authors: M. Savolainen, V. Touboltsev, P. Koppinen, K. -P. Riikonen, K. Arutyunov

Abstract: An ion beam based dry etching method has been developed for progressive reduction of dimensions of prefabricated nanostructures. The method has been successfully applied to aluminum nanowires and aluminum single electron transistors (SET). The method is based on removal of material from the structures when exposed to energetic argon ions and it was shown to be applicable multiple times to the sa… ▽ More An ion beam based dry etching method has been developed for progressive reduction of dimensions of prefabricated nanostructures. The method has been successfully applied to aluminum nanowires and aluminum single electron transistors (SET). The method is based on removal of material from the structures when exposed to energetic argon ions and it was shown to be applicable multiple times to the same sample. The electrical measurements and samples imaging in between the sputtering sessions clearly indicated that the dimensions, i.e. cross-section of the nanowires and area of the tunnel junctions in SET, were progressively reduced without noticeable degradation of the sample structure. We were able to reduce the effective diameter of aluminum nanowires from ~65 nm down to ~30 nm, whereas the tunnel junction area has been reduced by 40 %. △ Less

Submitted 21 November, 2003; v1 submitted 17 November, 2003; originally announced November 2003.

Journal ref: Appl. Phys. A 79, 1769--1773 (2004)

Discrete saturation thickness and anomalous potential height of native ultrathin aluminum oxide tunnel barriers

Authors: K. Gloos, P. J. Koppinen, J. P. Pekola

Abstract: We have investigated planar metal - insulator - metal tunnel junctions with aluminum oxide as dielectricum. These oxide barriers were grown on an aluminum electrode in pure oxygen at room temperature till saturation. We observed discrete barrier widths separated by Δs \approx 0.38 nm, corresponding to the addition of one layer of oxygen atoms. The minimum thickness of s_0 \approx 0.54 nm is due… ▽ More We have investigated planar metal - insulator - metal tunnel junctions with aluminum oxide as dielectricum. These oxide barriers were grown on an aluminum electrode in pure oxygen at room temperature till saturation. We observed discrete barrier widths separated by Δs \approx 0.38 nm, corresponding to the addition of one layer of oxygen atoms. The minimum thickness of s_0 \approx 0.54 nm is due to a double layer of oxygen. We found a strong and systematic dependence of the barrier height Φ_0 on the thickness s like Φ_0 \approx 2.5 eV / s^2(nm), which nearly coincides with the kinetic electron energy E = h^2/2ms^2 for which the deBroglie wavelength matches the width of the barrier. △ Less

Submitted 26 May, 2001; originally announced May 2001.

Comments: 4 pages, 4 eps figures