Showing 1–2 of 2 results for author: Kopev, P S

InN/In nanocomposites: Plasmonic effects and a hidden optical gap

Authors: T. V. Shubina, V. A. Kosobukin, T. A. Komissarova, V. N. Jmerik, P. S. Kopev, S. V. Ivanov, A. Vasson, J. Leymarie, N. A. Gippius, T. Araki, T. Akagi, Y. Nanishi

Abstract: InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, be… ▽ More InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions. △ Less

Submitted 27 June, 2008; originally announced June 2008.

Comments: 4 pages, 6 figures

InN/In nanocomposites: Evidences of plasmonic effects and hidden gap

Authors: T. V. Shubina, V. A. Kosobukin, T. A. Komissarova, V. N. Jmerik, P. S. Kopev, S. V. Ivanov, A. Vasson, J. Leymarie, N. A. Gippius, T. Araki, T. Akagi, Y. Nanishi

Abstract: InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, be… ▽ More InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions. △ Less

Submitted 3 July, 2008; v1 submitted 27 June, 2008; originally announced June 2008.

Comments: 4 pages, 6 figures, mistakenly uploaded duplicated source files with the slightly different title