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Stabilization of a polar phase in WO3 thin films by epitaxial strain
Authors:
Ewout van der Veer,
Martin F. Sarott,
Jack T. Eckstein,
Stijn Feringa,
Dennis van der Veen,
Johanna van Gent González,
Majid Ahmadi,
Ellen M. Kiens,
Gertjan Koster,
Bart J. Kooi,
Michael A. Carpenter,
Ekhard K. H. Salje,
Beatriz Noheda
Abstract:
The introduction of new simple oxides that are CMOS-compatible constitutes an important step towards multifunctional oxide electronics. One such oxide, tungsten trioxide (WO3), has raised much interest as an electrode material. Here we reveal the presence of a previously unreported polar phase of WO3, obtained in thin films grown on YAlO3 substrates. The epitaxial strain stabilizes a triclinic pha…
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The introduction of new simple oxides that are CMOS-compatible constitutes an important step towards multifunctional oxide electronics. One such oxide, tungsten trioxide (WO3), has raised much interest as an electrode material. Here we reveal the presence of a previously unreported polar phase of WO3, obtained in thin films grown on YAlO3 substrates. The epitaxial strain stabilizes a triclinic phase, whose unit cell could be fully determined by means of large-scale reciprocal space mapping, rarely reported in thin films.
Unconventional strain accommodation mechanisms enable the triclinic phase to be stabilized up to unexpectedly large film thicknesses. The strain gradients around domain walls and local variations of octahedral tilts, observed by scanning transmission electron microscopy, could explain this behavior.
An in-plane striped domain pattern with needle-like bifurcations is visible in piezoresponse force microscopy maps, evidencing the polar nature of the films. Correspondingly, local modulations of the conductivity of the film are shown by conductive atomic force microscopy and scanning electron microscopy. These results open the possibility for adding functionalities to WO3-based devices by controlling conductivity and epitaxial strain.
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Submitted 16 May, 2025;
originally announced May 2025.
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Electrically induced negative differential resistance states mediated by oxygen octahedra coupling in manganites for neuronaldynamics
Authors:
Azminul Jaman,
Lorenzo Fratino,
Majid Ahmadi,
Rodolfo Rocco,
Bart J. Kooi,
Marcelo Rozenberg,
Tamalika Banerjee
Abstract:
The precipitous rise of consumer network applications reiterates the urgency to redefine computing hardware with low power footprint. Neuromorphic computing utilizing correlated oxides offers an energy-efficient solution. By designing anisotropic functional properties in LSMO on a twinned LAO substrate and driving it out of thermodynamic equilibrium, we demonstrate two distinct negative differenti…
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The precipitous rise of consumer network applications reiterates the urgency to redefine computing hardware with low power footprint. Neuromorphic computing utilizing correlated oxides offers an energy-efficient solution. By designing anisotropic functional properties in LSMO on a twinned LAO substrate and driving it out of thermodynamic equilibrium, we demonstrate two distinct negative differential resistance states in such volatile memristors. These were harnessed to exhibit oscillatory dynamics in LSMO at different frequencies and an artificial neuron with leaky integrate-and-fire dynamics. A material based modelling incorporating bond angle distortions in neighboring perovskites and capturing the inhomogeneity of domain distribution and propagation explains both the NDR regimes. Our findings establish LSMO as an important material for neuromorphic computing hardware.
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Submitted 31 January, 2025;
originally announced February 2025.
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Understanding the Growth and Properties of Sputter-Deposited Phase-Change Superlattice Films
Authors:
Simone Prili,
Valeria Bragaglia,
Vara Prasad Jonnalagadda,
Jesse Luchtenveld,
Fabrizio Arciprete,
Bart J. Kooi,
Abu Sebastian,
Ghazi Sarwat Syed
Abstract:
Highly textured chalcogenide films have recently gained significant interest for phase-change memory applications. Several reports have highlighted that programming efficiency improves in devices featuring superlattice stacks, such as Ge2Sb2Te5/Sb2Te3. However, to be technologically relevant, these films must be deposited on foundry-scale wafers using processes compatible with back end of the line…
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Highly textured chalcogenide films have recently gained significant interest for phase-change memory applications. Several reports have highlighted that programming efficiency improves in devices featuring superlattice stacks, such as Ge2Sb2Te5/Sb2Te3. However, to be technologically relevant, these films must be deposited on foundry-scale wafers using processes compatible with back end of the line (BEOL) integration and complementary metal-oxide-semiconductor (CMOS) technology, such as, for example, sputter deposition. In this work, we present our observations on the influence of temperature, pressure, and seeding layer parameters on the sputter growth processes of superlattice films. By measuring various material properties, we construct a pseudo-phase diagram to illustrate the growth of both individual and superlattice films with different periodicities on technologically relevant substrates, namely SiO2 and carbon. These results provide important insights into the structure, intermixing and electro-optical properties of superlattice films,
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Submitted 24 January, 2025; v1 submitted 28 November, 2024;
originally announced November 2024.
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Atomically resolved phase coexistence in VO2 thin films
Authors:
Masoud Ahmadi,
Atul Atul,
Sytze de Graaf,
Ewout van der Veer,
Ansgar Meise,
Amir Hossein Tavabi,
Marc Heggen,
Rafal E. Dunin-Borkowski,
Majid Ahmadi,
Bart J. Kooi
Abstract:
Concurrent structural and electronic transformations in VO2 thin films are of twofold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real space atomic structure analysis in which also the ox…
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Concurrent structural and electronic transformations in VO2 thin films are of twofold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real space atomic structure analysis in which also the oxygen atomic columns are resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of the strain-stabilized intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) utilizing atomic-resolution electron microscopy. Our approach sets a direct pathway to unravel the structural transitions in wide range of correlated oxides, offering substantial implications for e.g. optoelectronics and ferroelectrics.
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Submitted 30 September, 2023;
originally announced October 2023.
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Nitrogen-Doped Ti$_3$C$_2$T$_x$ Coated with a Molecularly Imprinted Polymer as Efficient Cathode Material for Lithium-Sulfur Batteries
Authors:
Feng Yan,
Liqiang Lu,
Chongan Ye,
Qi Chen,
Sumit Kumar,
Wenjian Li,
Hamoon Hemmatpour,
Konstantinos Spyrou,
Sytze de Graaf,
Marc C. A. Stuart,
Bart J. Kooi,
Dimitrios P. Gournis,
Katja Loos,
Yutao Pei,
Petra Rudolf
Abstract:
Due to their high energy density (2600 Wh/kg), low cost, and low environmental impact, lithium-sulfur batteries are considered a promising alternative to lithium-ion batteries. However, their commercial viability remains a formidable scientific challenge mainly because of the sluggish reaction kinetics at the cathode and the so-called "shuttling effect" of soluble polysulfides, which results in ca…
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Due to their high energy density (2600 Wh/kg), low cost, and low environmental impact, lithium-sulfur batteries are considered a promising alternative to lithium-ion batteries. However, their commercial viability remains a formidable scientific challenge mainly because of the sluggish reaction kinetics at the cathode and the so-called "shuttling effect" of soluble polysulfides, which results in capacity decay and a shortened lifespan. Herein, molecular imprinting with Li$_2$S$_8$ as a target molecule in combination with a two-dimensional material, MXene, is proposed to overcome these issues. Molecularly imprinted polymer-coated nitrogen-doped Ti-based MXene was successfully synthesized and demonstrated to exhibit an appealing electrochemical performance, namely a high specific capacity of 1095 mAh/g at 0.1 C and an extended cycling stability (300 mAh/g at 1.0 C after 300 cycles). X-ray photoelectron spectroscopy was applied to elucidate the underlying mechanisms and proved that Li$_2$S$_8$-imprinted polymer polyacrylamide serves as a polysulfide trap through strong chemical affinity towards the long-chain lithium polysulfides, while N-doped Ti-based MXene promotes the redox kinetics by accelerating the conversion of lithium polysulfides. This distinct interfacial strategy is expected to result in more effective and stable Li-S batteries.
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Submitted 19 August, 2023;
originally announced August 2023.
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MgH2 nanoparticles confined in reduced graphene oxide pillared with organosilica: a novel type of hydrogen storage material
Authors:
Feng Yan,
Estela Moreton Alfonsín,
Peter Ngene,
Sytze de Graaf,
Oreste De Luca,
Huatang Cao,
Konstantinos Spyrou,
Liqiang Lu,
Eleni Thomou,
Yutao Pei,
Bart J. Kooi,
Dimitrios P. Gournis,
Petra E. de Jongh,
Petra Rudolf
Abstract:
Hydrogen is a promising energy carrier that can push forward the energy transition because of its high energy density (142 MJ kg-1), variety of potential sources, low weight and low environmental impact, but its storage for automotive applications remains a formidable challenge. MgH2, with its high gravimetric and volumetric density, presents a compelling platform for hydrogen storage; however, it…
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Hydrogen is a promising energy carrier that can push forward the energy transition because of its high energy density (142 MJ kg-1), variety of potential sources, low weight and low environmental impact, but its storage for automotive applications remains a formidable challenge. MgH2, with its high gravimetric and volumetric density, presents a compelling platform for hydrogen storage; however, its utilization is hindered by the sluggish kinetics of hydrogen uptake/release and high temperature operation. Herein we show that a novel layered heterostructure of reduced graphene oxide and organosilica with high specific surface area and narrow pore size distribution can serve as a scaffold to host MgH2 nanoparticles with a narrow diameter distribution around ~2.5 nm and superior hydrogen storage properties to bulk MgH2. Desorption studies showed that hydrogen release starts at 50 °C, with a maximum at 348 °C and kinetics dependent on particle size. Reversibility tests demonstrated that the dehydrogenation kinetics and re-hydrogenation capacity of the system remains stable at 1.62 wt.% over four cycles at 200 °C. Our results prove that MgH2 confinement in a nanoporous scaffold is an efficient way to constrain the size of the hydride particles, avoid aggregation and improve kinetics for hydrogen release and recharging.
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Submitted 19 August, 2023;
originally announced August 2023.
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Strong substrate influence on atomic structure and properties of epitaxial VO2 thin films
Authors:
Atul Atul,
Majid Ahmadi,
Panagiotis Koutsogiannis,
Heng Zhang,
Bart J. Kooi
Abstract:
The metal-insulator transition (MIT) observed in vanadium dioxide (VO2) has been a topic of great research interest for past decades, with the underlying physics yet not fully understood due to the complex electron interactions and structures involved. The ability to understand and tune the MIT behaviour is of vital importance from the perspective of both underlying fundamental science as well as…
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The metal-insulator transition (MIT) observed in vanadium dioxide (VO2) has been a topic of great research interest for past decades, with the underlying physics yet not fully understood due to the complex electron interactions and structures involved. The ability to understand and tune the MIT behaviour is of vital importance from the perspective of both underlying fundamental science as well as potential applications. In this work, we use scanning transmission electron microscopy (STEM) to investigate cross-section lamella of the VO2 films deposited using pulsed laser deposition (PLD) on three substrates: c-cut sapphire, TiO2(101) and TiO2(001). Advanced STEM imaging is performed in which also the oxygen atom columns are resolved. We link the overall film quality and structures on atomic and nanoscale to the electrical transition characteristics. We observe poor MIT characteristics on c-sapphire due to the presence of very small domains with six orientation variants, and on TiO2 (001) due to the presence of cracks induced by stress relaxation. However, the MIT on TiO2 (101) behaves favourably, despite similar stress relaxation which, however, only lead to domain boundaries but no cracks.
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Submitted 20 May, 2023;
originally announced May 2023.
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Van der Waals Epitaxy of Pulsed Laser Deposited Antimony Thin Films on Lattice-matched and Amorphous Substrates
Authors:
Daniel T. Yimam,
Majid Ahmadi,
Bart J. Kooi
Abstract:
Monatomic antimony thin films have recently attracted attention for applications in phase change memory, nanophotonics, and 2D materials. Although some promising results have been reported, the true potential of Sb thin films is still hindered by the scalability issue and the lack of reliable bottom-up production. Here we demonstrate the growth of Sb thin films on a lattice-matching and amorphous…
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Monatomic antimony thin films have recently attracted attention for applications in phase change memory, nanophotonics, and 2D materials. Although some promising results have been reported, the true potential of Sb thin films is still hindered by the scalability issue and the lack of reliable bottom-up production. Here we demonstrate the growth of Sb thin films on a lattice-matching and amorphous substrates using pulsed laser deposition (PLD). C-axis out-of-plane textured Sb thin films were successfully deposited on Sb$_2$Te$_3$ and SiO$_2$\Si$_3$N$_4$ substrates. In the case of growth on Sb$_2$Te$_3$, we show that an intermediate phase is formed at the Sb$_2$Te$_3$-Sb interface playing a crucial role in forming a solid coupling and thus maintaining epitaxy leading to the production of high-quality Sb thin films. A 3 - 4 nm amorphous Sb seed layer was used to induce texture and suitable surface termination for the growth of Sb thin films on amorphous substrates. The deposition parameters were fine-tuned, and the growth was monitored in situ by a Reflective High Energy Electron Diffraction (RHEED). Scanning/Transmission Electron Microscopy (S/TEM) unveiled the local structure of produced films showing the formation of $β$-phase Sb thin films. Our results demonstrate the feasibility to produce very smooth high-quality antimony thin films with uniform coverage, from few layers to large thicknesses, using pulsed laser deposition. We believe the results of our work on scalable and controllable Sb growth have the potential to open up research on phase-change materials and optoelectronics research.
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Submitted 29 January, 2023;
originally announced January 2023.
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Memristive Memory Enhancement by Device Miniaturization for Neuromorphic Computing
Authors:
Anouk S. Goossens,
Majid Ahmadi,
Divyanshu Gupta,
Ishitro Bhaduri,
Bart J. Kooi,
Tamalika Banerjee
Abstract:
The areal footprint of memristors is a key consideration in material-based neuromorophic computing and large-scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments, posing a challenge to their scalability in architecture implementation. Here we present a compelling alternative memristive device and demonstrate that areal dow…
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The areal footprint of memristors is a key consideration in material-based neuromorophic computing and large-scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments, posing a challenge to their scalability in architecture implementation. Here we present a compelling alternative memristive device and demonstrate that areal downscaling leads to enhancement in memristive memory window, while maintaining analogue behavior, contrary to expectations. Our device designs directly integrated on semiconducting Nb-SrTiO$_3$ allows leveraging electric field effects at edges, increasing the dynamic range in smaller devices. Our findings are substantiated by studying the microscopic nature of switching using scanning transmission electron microscopy, in different resistive states, revealing an interfacial layer whose physical extent is influenced by applied electric fields. The ability of Nb-SrTiO$_3$ memristors to satisfy hardware and software requirements with downscaling, while significantly enhancing memristive functionalities, makes them strong contenders for non-von Neumann computing, beyond CMOS.
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Submitted 9 January, 2023;
originally announced January 2023.
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Ultrathin, sputter-deposited, amorphous alloy films of ruthenium and molybdenum
Authors:
G. Yetik,
A. Troglia,
S. Farokhipoor,
S. van Vliet,
J. Momand,
B. J. Kooi,
R. Bliem,
J. W. M. Frenken
Abstract:
Microscopy and diffraction measurements are presented of ultrathin binary alloy films of ruthenium and molybdenum that are obtained by standard sputter deposition. For compositions close to Ru50Mo50, we find the films to be amorphous. The amorphicity of the films is accompanied by a significant reduction of the roughness with respect to the roughness of equally thick films of either ruthenium or m…
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Microscopy and diffraction measurements are presented of ultrathin binary alloy films of ruthenium and molybdenum that are obtained by standard sputter deposition. For compositions close to Ru50Mo50, we find the films to be amorphous. The amorphicity of the films is accompanied by a significant reduction of the roughness with respect to the roughness of equally thick films of either ruthenium or molybdenum. We ascribe this to the absence of the grain structure that is characteristic of the polycrystalline films of the separate elements.
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Submitted 17 August, 2022; v1 submitted 8 April, 2022;
originally announced April 2022.
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Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires
Authors:
Ghada Badawy,
Bomin Zhang,
Tomáš Rauch,
Jamo Momand,
Sebastian Koelling,
Jason Jung,
Sasa Gazibegovic,
Oussama Moutanabbir,
Bart J. Kooi,
Silvana Botti,
Marcel A. Verheijen,
Sergey M. Frolov,
Erik P. A. M. Bakkers
Abstract:
Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topol…
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Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, we combine the II-VI cadmium telluride (CdTe) with the III-V InSb in the form of core-shell (InSb-CdTe) nanowires and explore potential applications based on the electronic structure of the InSb-CdTe interface and the epitaxy of CdTe on the InSb nanowires. We determine the electronic structure of the InSb-CdTe interface using density functional theory and extract a type-I band alignment with a small conduction band offset ($\leq$ 0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of the structural quality of these shells, we demonstrate that the lattice-matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These epitaxial shells do not introduce disorder to the InSb nanowires as indicated by the comparable field-effect mobility we measure for both uncapped and CdTe-capped nanowires.
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Submitted 9 November, 2021;
originally announced November 2021.
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Interfacial Spin-Orbit Torques and Magnetic Anisotropy in WSe$_{2}$/Permalloy Bilayers
Authors:
Jan Hidding,
Sytze H. Tirion,
Jamo Momand,
Alexey Kaverzin,
Maxim Mostovoy,
Bart J. van Wees,
Bart J. Kooi,
Marcos H. D. Guimarães
Abstract:
Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the spin-orbit torques observed…
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Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the spin-orbit torques observed in these TMD/ferromagnet bilayers. To shine light on the microscopic mechanisms at play, here we perform thickness dependent spin-orbit torque measurements on the semiconducting WSe$_{2}$/permalloy bilayer with various WSe$_{2}$ layer thickness, down to the monolayer limit. We observe a large out-of-plane field-like torque with spin-torque conductivities up to $1\times10^4 ({\hbar}/2e) (Ωm)^{-1}$. For some devices, we also observe a smaller in-plane antidamping-like torque, with spin-torque conductivities up to $4\times10^{3} ({\hbar}/2e) (Ωm)^{-1}$, comparable to other TMD-based systems. Both torques show no clear dependence on the WSe$_{2}$ thickness, as expected for a Rashba system. Unexpectedly, we observe a strong in-plane magnetic anisotropy - up to about $6.6\times10^{4} erg/cm^{3}$ - induced in permalloy by the underlying hexagonal WSe$_{2}$ crystal. Using scanning transmission electron microscopy, we confirm that the easy axis of the magnetic anisotropy is aligned to the armchair direction of the WSe$_{2}$. Our results indicate a strong interplay between the ferromagnet and TMD, and unveil the nature of the spin-orbit torques in TMD-based devices. These findings open new avenues for possible methods for optimizing the torques and the interaction with interfaced magnets, important for future non-volatile magnetic devices for data processing and storage.
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Submitted 9 September, 2021; v1 submitted 22 July, 2021;
originally announced July 2021.
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Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry
Authors:
Alexander Y. Choi,
Iretomiwa Esho,
Bekari Gabritchidze,
Jacob Kooi,
Austin J. Minnich
Abstract:
Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the microwave noise figure are therefore of practical interest. In particular, the contribution of thermal noise from the gate at cryogenic temperatures remains unclear owi…
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Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the microwave noise figure are therefore of practical interest. In particular, the contribution of thermal noise from the gate at cryogenic temperatures remains unclear owing to a lack of experimental measurements of thermal resistance under these conditions. Here, we report measurements of gate junction temperature and thermal resistance in a HEMT at cryogenic and room temperatures using a Schottky thermometry method. At temperatures $\sim 20$ K, we observe a nonlinear trend of thermal resistance versus power that is consistent with heat dissipation by phonon radiation. Based on this finding, we consider heat transport by phonon radiation at the low-noise bias and liquid helium temperatures and estimate that the thermal noise from the gate is several times larger than previously assumed owing to self-heating. We conclude that without improvements in thermal management, self-heating results in a practical lower limit for microwave noise figure of HEMTs at cryogenic temperatures.
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Submitted 24 May, 2021;
originally announced May 2021.
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Real-time imaging of atomic potentials in 2D materials with 30 keV electrons
Authors:
Sytze de Graaf,
Majid Ahmadi,
Ivan Lazić,
Eric G. T. Bosch,
Bart J. Kooi
Abstract:
Scanning transmission electron microscopy (STEM) is the most widespread adopted tool for atomic scale characterization of two-dimensional (2D) materials. Many 2D materials remain susceptible to electron beam damage, despite the standardized practice to reduce the beam energy from 200 keV to 80 or 60 keV. Although, all elements present can be detected by atomic electrostatic potential imaging using…
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Scanning transmission electron microscopy (STEM) is the most widespread adopted tool for atomic scale characterization of two-dimensional (2D) materials. Many 2D materials remain susceptible to electron beam damage, despite the standardized practice to reduce the beam energy from 200 keV to 80 or 60 keV. Although, all elements present can be detected by atomic electrostatic potential imaging using integrated differential phase contrast (iDPC) STEM or electron ptychography, capturing dynamics with atomic resolution and enhanced sensitivity has remained a challenge. Here, by using iDPC-STEM, we capture defect dynamics in 2D WS$_2$ by atomic electrostatic potential imaging with a beam energy of only 30 keV. The direct imaging of atomic electrostatic potentials with high framerate reveals the presence and motion of single atoms near defects and edges in WS$_2$ that are otherwise invisible with conventional annular dark-field STEM or cannot be captured sufficiently fast by electron ptychography.
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Submitted 24 February, 2021;
originally announced February 2021.
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Differences in Sb2Te3 growth by pulsed laser and sputter deposition
Authors:
Jing Ning,
J. C. Martinez,
Jamo Momand,
Heng Zhang,
Subodh C. Tiwari,
Fuyuki Shimojo,
Aiichiro Nakano,
Rajiv K. Kalia,
Priya Vashishta,
Paulo S. Branicio,
Bart J. Kooi,
Robert E. Simpson
Abstract:
High quality Van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how the out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb2Te3 films. We compare films grown by radio frequency sputtering and pulse…
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High quality Van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how the out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb2Te3 films. We compare films grown by radio frequency sputtering and pulsed laser deposition (PLD). The growth factors that influence the crystal quality for each method are different. For PLD grown films a thin amorphous Sb2Te3 seed layer most significantly influences the crystal quality. In contrast, the crystalline quality of films grown by sputtering is rather sensitive to the deposition temperature and less affected by the presence of a seed layer. This difference is somewhat surprising as both methods are out-of-thermal-equilibrium plasma-based methods. Non-adiabatic quantum molecular dynamics simulations show that this difference originates from the density of excited atoms in the plasma. The PLD plasma is more intense and with higher energy than that used in sputtering, and this increases the electronic temperature of the deposited atoms, which concomitantly increases the adatom diffusion lengths in PLD. In contrast, the adatom diffusivity is dominated by the thermal temperature for sputter grown films. These results explain the wide range of Sb2Te3 and superlattice crystal qualities observed in the literature. These results indicate that, contrary to popular belief, plasma-based deposition methods are suitable for growing high quality crystalline chalcogenides.
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Submitted 14 September, 2020; v1 submitted 13 September, 2020;
originally announced September 2020.
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Single-source, solvent-free, room temperature deposition of black $γ$-CsSnI$_3$ films
Authors:
Vivien M. Kiyek,
Yorick A. Birkhölzer,
Yury Smirnov,
Martin Ledinsky,
Zdenek Remes,
Jamo Momand,
Bart J. Kooi,
Gertjan Koster,
Guus Rijnders,
Monica Morales-Masis
Abstract:
The presence of a non-optically active polymorph (yellow-phase) competing with the optically active polymorph (black $γ$-phase) at room temperature in CsSnI3 and the susceptibility of Sn to oxidation, represent two of the biggest obstacles for the exploitation of CsSnI3 in optoelectronic devices. Here room-temperature single-source in vacuum deposition of smooth black $γ$ - CsSnI3 thin films is re…
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The presence of a non-optically active polymorph (yellow-phase) competing with the optically active polymorph (black $γ$-phase) at room temperature in CsSnI3 and the susceptibility of Sn to oxidation, represent two of the biggest obstacles for the exploitation of CsSnI3 in optoelectronic devices. Here room-temperature single-source in vacuum deposition of smooth black $γ$ - CsSnI3 thin films is reported. This has been done by fabricating a solid target by completely solvent-free mixing of CsI and SnI2 powders and isostatic pressing. By controlled laser ablation of the solid target on an arbitrary substrate at room temperature, the formation of CsSnI3 thin films with optimal optical properties is demonstrated. The films present a band gap of 1.32 eV, a sharp absorption edge and near-infrared photoluminescence emission. These properties and X-ray diffraction of the thin films confirmed the formation of the orthorhombic (B-$γ$) perovskite phase. The thermal stability of the phase was ensured by applying in situ an Al2O$_3$ capping layer. This work demonstrates the potential of pulsed laser deposition as a volatility-insensitive single-source growth technique of halide perovskites and represents a critical step forward in the development and future scalability of inorganic lead-free halide perovskites.
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Submitted 29 April, 2020;
originally announced June 2020.
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Resolving hydrogen atoms at metal-metal hydride interfaces
Authors:
Sytze de Graaf,
Jamo Momand,
Christoph Mitterbauer,
Sorin Lazar,
Bart J. Kooi
Abstract:
Hydrogen as a fuel can be stored safely with high volumetric density in metals. It can, however, also be detrimental to metals causing embrittlement. Understanding fundamental behavior of hydrogen at atomic scale is key to improve the properties of metal-metal hydride systems. However, currently, there is no robust technique capable of visualizing hydrogen atoms. Here, we demonstrate that hydrogen…
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Hydrogen as a fuel can be stored safely with high volumetric density in metals. It can, however, also be detrimental to metals causing embrittlement. Understanding fundamental behavior of hydrogen at atomic scale is key to improve the properties of metal-metal hydride systems. However, currently, there is no robust technique capable of visualizing hydrogen atoms. Here, we demonstrate that hydrogen atoms can be imaged unprecedentedly with integrated differential phase contrast, a recently developed technique performed in a scanning transmission electron microscope. Images of the titanium-titanium monohydride interface reveal remarkable stability of the hydride phase, originating from the interplay between compressive stress and interfacial coherence. We also uncovered, thirty years after three models were proposed, which one describes the position of the hydrogen atoms with respect to the interface. Our work enables novel research on hydrides and is extendable to all materials containing light and heavy elements, including oxides, nitrides, carbides and borides.
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Submitted 20 June, 2019; v1 submitted 21 December, 2018;
originally announced December 2018.
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A rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films
Authors:
Yingfen Wei,
Pavan Nukala,
Mart Salverda,
Sylvia Matzen,
Hong Jian Zhao,
Jamo Momand,
Arnoud Everhardt,
Graeme R. Blake,
Philippe Lecoeur,
Bart J. Kooi,
Jorge Íñiguez,
Brahim Dkhil,
Beatriz Noheda
Abstract:
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards t…
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After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards this end, thin films with increased crystal quality are needed. We report the epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 (STO) substrates. The films, which are under epitaxial compressive strain and are predominantly (111)-oriented, display large FE polarization values up to 34 μC/cm2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This unexpected finding allows us to propose a compelling model for the formation of the FE phase. In addition, these results point towards nanoparticles of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.
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Submitted 26 January, 2018;
originally announced January 2018.
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Insights into ultrafast Ge-Te bond dynamics in a phase-change superlattice
Authors:
Marco Malvestuto,
Antonio Caretta,
Barbara Casarin,
Federico Cilento,
Martina Dell'Angela,
Daniele Fausti,
Raffaella Calarco,
Bart J. Kooi,
Enrico Varesi,
John Robertson,
Fulvio Parmigiani
Abstract:
A long-standing question for avant-grade data storage technology concerns the nature of the ultrafast photoinduced phase transformations in the wide class of chalcogenide phase-change materials (PCMs). Overall, a comprehensive understanding of the microstructural evolution and the relevant kinetics mechanisms accompanying the out-of-equilibrium phases is still missing. Here, after overheating a ph…
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A long-standing question for avant-grade data storage technology concerns the nature of the ultrafast photoinduced phase transformations in the wide class of chalcogenide phase-change materials (PCMs). Overall, a comprehensive understanding of the microstructural evolution and the relevant kinetics mechanisms accompanying the out-of-equilibrium phases is still missing. Here, after overheating a phase-change chalcogenide superlattice by an ultrafast laser pulse, we indirectly track the lattice relaxation by time resolved X-ray absorption spectroscopy (tr-XAS) with a sub-ns time resolution. The novel approach to the tr-XAS experimental results reported in this work provides an atomistic insight of the mechanism that takes place during the cooling process, meanwhile a first-principles model mimicking the microscopic distortions accounts for a straightforward representation of the observed dynamics. Finally, we envisage that our approach can be applied in future studies addressing the role of dynamical structural strain in phase-change materials.
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Submitted 26 May, 2016;
originally announced May 2016.
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Sensitivity of micromechanical actuation on amorphous to crystalline phase transformations under the influence of Casimir forces
Authors:
M. Sedighi,
W. H. Broer,
G. Palasantzas,
B. J. Kooi
Abstract:
Amorphous to crystalline phase transitions in phase change materials (PCM) can have strong influence on the actuation of microelectromechanical systems under the influence of Casimir forces. Indeed, the bifurcation curves of the stationary equilibrium points and the corresponding phase portraits of the actuation dynamics between gold and AIST PCM, where an increase of the Casimir force of up ~25%…
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Amorphous to crystalline phase transitions in phase change materials (PCM) can have strong influence on the actuation of microelectromechanical systems under the influence of Casimir forces. Indeed, the bifurcation curves of the stationary equilibrium points and the corresponding phase portraits of the actuation dynamics between gold and AIST PCM, where an increase of the Casimir force of up ~25% has been measured upon crystallization, show strong sensitivity to changes of the Casimir force as the stiffness of the actuating component decreases and/or the effective interaction area of the Casimir force increases, which can also lead to stiction. However, introduction of intrinsic energy dissipation (associated with a finite quality factor of the actuating system) can prevent stiction by driving the system to attenuated motion towards stable equilibrium depending on the PCM state and the system quality factor.
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Submitted 15 October, 2013;
originally announced October 2013.
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Domain wall magnetism in thin films of orthorhombic manganites
Authors:
Christophe J. M. Daumont,
Sriram Venkatesan,
Bart J. Kooi,
Jeff Th. M. De Hosson,
Beatriz Noheda
Abstract:
Thin films of orthorhombic TbMnO3, as well as other orthorhombic manganites, epitaxially grown on cubic SrTiO3 substrates display an induced magnetic moment that is absent in the bulk (antiferromagnetic) counterpart. Here we show that there is a clear correlation between the domain microstructure and the induced magnetic moment in TbMnO3 films on SrTiO3. In addition, the distinct dependence of the…
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Thin films of orthorhombic TbMnO3, as well as other orthorhombic manganites, epitaxially grown on cubic SrTiO3 substrates display an induced magnetic moment that is absent in the bulk (antiferromagnetic) counterpart. Here we show that there is a clear correlation between the domain microstructure and the induced magnetic moment in TbMnO3 films on SrTiO3. In addition, the distinct dependence of the magnetization with the film thickness is not consistent with domain magnetism and indicates that the domain walls, rather than the domains, are the origin of the net magnetic moment. Since the orientation of the domain walls can be designed by the film-substrate relationship and its density can be tuned with the film thickness, these results represent a significant step forward towards the design of devices based on domain wall functionality.
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Submitted 30 January, 2014; v1 submitted 2 August, 2010;
originally announced August 2010.
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Influence of random roughness on cantilever curvature sensitivity
Authors:
O. Ergincan,
G. Palasantzas,
B. J. Kooi
Abstract:
In this work we explore the influence of random surface roughness on the cantilever sensitivity to respond to curvature changes induced by changes in surface stress. The roughness is characterized by the out-of-plane roughness amplitude w, the lateral correlation length x, and the roughness or Hurst exponent H (0<H<1). The cantilever sensitivity is found to decrease with increasing roughness (de…
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In this work we explore the influence of random surface roughness on the cantilever sensitivity to respond to curvature changes induced by changes in surface stress. The roughness is characterized by the out-of-plane roughness amplitude w, the lateral correlation length x, and the roughness or Hurst exponent H (0<H<1). The cantilever sensitivity is found to decrease with increasing roughness (decreasing H and/or increasing ratio w/x) or equivalently increasing local surface slope. Finally, analytic expressions of the cantilever sensitivity as a function of the parameters w, x, and H are derived in order to allow direct implementation in sensing systems.
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Submitted 11 January, 2010;
originally announced January 2010.
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Mg/Ti multilayers: structural, optical and hydrogen absorption properties
Authors:
A. Baldi,
G. K. Palsson,
M. Gonzalez-Silveira,
H. Schreuders,
M. Slaman,
J. H. Rector,
G. Krishnan,
B. J. Kooi,
G. S. Walker,
M. W. Fay,
B. Hjorvarsson,
R. J. Wijngaarden,
B. Dam,
R. Griessen
Abstract:
Mg-Ti alloys have uncommon optical and hydrogen absorbing properties, originating from a "spinodal-like" microstructure with a small degree of chemical short-range order in the atoms distribution. In the present study we artificially engineer short-range order by depositing Pd-capped Mg/Ti multilayers with different periodicities and characterize them both structurally and optically. Notwithstan…
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Mg-Ti alloys have uncommon optical and hydrogen absorbing properties, originating from a "spinodal-like" microstructure with a small degree of chemical short-range order in the atoms distribution. In the present study we artificially engineer short-range order by depositing Pd-capped Mg/Ti multilayers with different periodicities and characterize them both structurally and optically. Notwithstanding the large lattice parameter mismatch between Mg and Ti, the as-deposited metallic multilayers show good structural coherence. Upon exposure to H2 gas a two-step hydrogenation process occurs, with the Ti layers forming the hydride before Mg. From in-situ measurements of the bilayer thickness L at different hydrogen pressures, we observe large out-of-plane expansions of the Mg and Ti layers upon hydrogenation, indicating strong plastic deformations in the films and a consequent shortening of the coherence length. Upon unloading at room temperature in air, hydrogen atoms remain trapped in the Ti layers due to kinetic constraints. Such loading/unloading sequence can be explained in terms of the different thermodynamic properties of hydrogen in Mg and Ti, as shown by diffusion calculations on a model multilayered systems. Absorption isotherms measured by hydrogenography can be interpreted as a result of the elastic clamping arising from strongly bonded Mg/Pd and broken Mg/Ti interfaces.
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Submitted 30 November, 2009;
originally announced November 2009.
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Tuning the atomic and domain structure of epitaxial films of multiferroic BiFeO3
Authors:
C. J. M. Daumont,
S. Farokhipoor,
A. Ferri,
J. C. Wojdel,
Jorge Iniguez,
B. J. Kooi,
B. Noheda
Abstract:
Recent works have shown that the domain walls of room-temperature multiferroic BiFeO3 (BFO) thin films can display distinct and promising functionalities. It is thus important to understand the mechanisms underlying domain formation in these films. High-resolution x-ray diffraction and piezo-force microscopy, combined with first-principles simulations, have allowed us to characterize both the at…
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Recent works have shown that the domain walls of room-temperature multiferroic BiFeO3 (BFO) thin films can display distinct and promising functionalities. It is thus important to understand the mechanisms underlying domain formation in these films. High-resolution x-ray diffraction and piezo-force microscopy, combined with first-principles simulations, have allowed us to characterize both the atomic and domain structure of BFO films grown under compressive strain on (001)-SrTiO3, as a function of thickness. We derive a twining model that describes the experimental observations and explains why the 71o domain walls are the ones commonly observed in these films. This understanding provides us with a new degree of freedom to control the structure and, thus, the properties of BiFeO3 thin films.
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Submitted 23 November, 2009;
originally announced November 2009.
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Epitaxial TbMnO3 thin films on SrTiO3 substrates: A structural study
Authors:
C. J. M. Daumont,
D. Mannix,
Sriram Venkatesan,
D. Rubi,
G. Catalan,
B. J. Kooi,
J. Th. M. De Hosson,
B. Noheda
Abstract:
TbMnO$_{3}$ films have been grown under compressive strain on (001)-oriented SrTiO$_{3}$ crystals. They have an orthorhombic structure and display the (001) orientation. With increasing thickness, the structure evolves from a more symmetric (tetragonal) to a less symmetric (bulk-like orthorhombic) structure, while keeping constant the in-plane compression thereby leaving the out-of-plane lattice…
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TbMnO$_{3}$ films have been grown under compressive strain on (001)-oriented SrTiO$_{3}$ crystals. They have an orthorhombic structure and display the (001) orientation. With increasing thickness, the structure evolves from a more symmetric (tetragonal) to a less symmetric (bulk-like orthorhombic) structure, while keeping constant the in-plane compression thereby leaving the out-of-plane lattice spacing unchanged. The domain microstructure of the films is also revealed, showing an increasing number of orthorhombic domains as the thickness is decreased: we directly observe ferroelastic domains as narrow as 4nm. The high density of domain walls may explain the induced ferromagnetism observed in the films, while both the decreased anisotropy and the small size of the domains could account for the absence of a ferroelectric spin spiral phase.
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Submitted 11 April, 2009; v1 submitted 24 November, 2008;
originally announced November 2008.
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The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlGaAs heterostructures
Authors:
E. J. Koop,
M. J. Iqbal,
F. Limbach,
M. Boute,
B. J. van Wees,
D. Reuter,
A. D. Wieck,
B. J. Kooi,
C. H. van der Wal
Abstract:
Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied how the quality of this type of ohmic contact depends on the annealing time and temperature, and how optimal parameters depend on the depth of the 2DEG below the surface. Combined with transmission electron microscopy a…
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Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied how the quality of this type of ohmic contact depends on the annealing time and temperature, and how optimal parameters depend on the depth of the 2DEG below the surface. Combined with transmission electron microscopy and energy-dispersive X-ray spectrometry studies of the annealed contacts, our results allow for identifying the annealing mechanism and proposing a model that can predict optimal annealing parameters for a certain heterostructure.
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Submitted 5 September, 2008;
originally announced September 2008.
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Magnetic and dielectric properties of YbMnO3 perovskite thin films
Authors:
D. Rubi,
Sriram Venkatesan,
B. J. Kooi,
J. Th. M. De Hosson,
T. T. M. Palstra,
B. Noheda
Abstract:
Metastable manganite perovskites displaying the antiferromagnetic so-called E-phase are predicted to be multiferroic. Due to the need of high-pressures for the synthesis of this phase, this prediction has only been confirmed in bulk HoMnO3. Here we report on the growth and characterization of YbMnO3 perovskite thin films grown under epitaxial strain. Highly-oriented thin films, with thickness do…
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Metastable manganite perovskites displaying the antiferromagnetic so-called E-phase are predicted to be multiferroic. Due to the need of high-pressures for the synthesis of this phase, this prediction has only been confirmed in bulk HoMnO3. Here we report on the growth and characterization of YbMnO3 perovskite thin films grown under epitaxial strain. Highly-oriented thin films, with thickness down to ~30nm, can be obtained showing magneto-dielectric coupling and magnetic responses as those expected for the E-phase. We observe that the magnetic properties depart from the bulk behavior only in the case of ultrathin films (d< 30nm), which display a glassy magnetic behavior. We show that strain effects alone cannot account for this difference and that the film morphology plays, instead, a crucial role.
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Submitted 10 July, 2008;
originally announced July 2008.
