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Effect of pressure on electric transport properties of carbon-doped EuB6
Authors:
M. Batkova,
I. Batko,
E. Bauer,
R. T. Khan,
V. B. Filipov,
E. S. Konovalova
Abstract:
We report about influence of external pressure on electrical resistivity of EuB5.99C0.01, the compound believed to be intrinsically inhomogeneous due to fluctuation of carbon content. Our results show that the low-temperature resistivity maximum shifts to lower temperature with applied pressure, opposite to the behavior reported for stoichiometric EuB6. The origin of such qualitative difference we…
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We report about influence of external pressure on electrical resistivity of EuB5.99C0.01, the compound believed to be intrinsically inhomogeneous due to fluctuation of carbon content. Our results show that the low-temperature resistivity maximum shifts to lower temperature with applied pressure, opposite to the behavior reported for stoichiometric EuB6. The origin of such qualitative difference we associate with the increasing volume fraction of the phase that is not compatible with ferromagnetic ordering (originating in regions with relatively higher carbon concentratio) with enhancing pressure. Our results support a recent proposition that carbon-rich regions strongly influence magnetotransport properties of carbon-doped EuB6, such as they play a role of spacers, which prevent percolation of ferromagnetic phase.
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Submitted 21 October, 2020;
originally announced October 2020.
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Low temperature resistivity studies of SmB6: Observation of twodimensional variable-range hopping conductivity
Authors:
Marianna Batkova,
Ivan Batko,
Slavomir Gabani,
Emil Gazo,
Elena Konovalova,
Vladimir Filippov
Abstract:
We studied electrical resistance of a single-crystalline SmB6 sample with a focus on the region of the "low-temperature resistivity plateau". Our observations did not show any true saturation of the electrical resistance at temperatures below 3 K down to 70 mK. According to our findings, temperature dependence of the electrical conduction in a certain temperature interval above 70 mK can be decomp…
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We studied electrical resistance of a single-crystalline SmB6 sample with a focus on the region of the "low-temperature resistivity plateau". Our observations did not show any true saturation of the electrical resistance at temperatures below 3 K down to 70 mK. According to our findings, temperature dependence of the electrical conduction in a certain temperature interval above 70 mK can be decomposed into a temperature-independent term and a temperature-activated term that can be described by variable-range hopping formula for two-dimensional systems, exp[-T0/T)^1/3]. Thus, our results indicate importance of hopping type of electrical transport in the near-surface region of SmB6.
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Submitted 6 September, 2017;
originally announced September 2017.
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Anomalous magnetoresistance of EuB$_{5.99}$C$_{0.01}$: Enhancement of magnetoresistance in systems with magnetic polarons
Authors:
M. Batkova,
I. Batko,
K. Flachbart,
K. Jurek,
E. S. Konovalova,
J. Kovac,
M. Reiffers,
V. Sechovsky,
N. Shitsevalova,
E. Santava,
J. Sebek
Abstract:
We present results of measurements of electrical, magnetic and thermal properties of EuB$_{5.99}$C$_{0.01}$. The observed anomalously large negative magnetoresistance as above, so below the Curie temperature of ferromagnetic ordering $T_C$ is attributed to fluctuations in carbon concentration. Below $T_C$ the carbon richer regions give rise to helimagnetic domains, which are responsible for an a…
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We present results of measurements of electrical, magnetic and thermal properties of EuB$_{5.99}$C$_{0.01}$. The observed anomalously large negative magnetoresistance as above, so below the Curie temperature of ferromagnetic ordering $T_C$ is attributed to fluctuations in carbon concentration. Below $T_C$ the carbon richer regions give rise to helimagnetic domains, which are responsible for an additional scattering term in the resistivity, which can be suppressed by a magnetic field. Above $T_C$ these regions prevent the process of percolation of magnetic polarons (MPs), acting as "spacers" between MPs. We propose that such "spacers", being in fact volumes incompatible with existence of MPs, may be responsible for the decrease of the percolation temperature and for the additional (magneto)resistivity increase in systems with MPs.
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Submitted 1 June, 2007;
originally announced June 2007.
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The energy gap of intermediate-valent SmB6 studied by point-contact spectroscopy
Authors:
K. Flachbart,
K. Gloos,
E. Konovalova,
Y. Paderno,
M. Reiffers,
P. Samuely,
P. Svec
Abstract:
We have investigated the intermediate valence narrow-gap semiconductor SmB6 at low temperatures using both conventional spear-anvil type point contacts as well as mechanically controllable break junctions. The zero-bias conductance varied between less than 0.01 mikrosiemens and up to 1 mS. The position of the spectral anomalies, which are related to the different activation energies and band gap…
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We have investigated the intermediate valence narrow-gap semiconductor SmB6 at low temperatures using both conventional spear-anvil type point contacts as well as mechanically controllable break junctions. The zero-bias conductance varied between less than 0.01 mikrosiemens and up to 1 mS. The position of the spectral anomalies, which are related to the different activation energies and band gaps of SmB6, did not depend on the the contact size. Two different regimes of charge transport could be distinguished: Contacts with large zero - bias conductance are in the diffusive Maxwell regime. They had spectra with only small non-linearities. Contacts with small zero - bias conductance are in the tunnelling regime. They had larger anomalies, but still indicating a finite 45 % residual quasiparticle density of states at the Fermi level at low temperatures of T = 0.1 K. The density of states derived from the tunelling spectra can be decomposed into two energy-dependent parts with Eg = 21 meV and Ed = 4.5 meV wide gaps, respectively.
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Submitted 4 June, 2001; v1 submitted 20 March, 2001;
originally announced March 2001.
