Showing 1–17 of 17 results for author: Konig, P

Computer simulations of colloidal gels: how hindered particle rotation affects structure and rheology

Authors: Hong T. Nguyen, Alan L. Graham, Peter H. Koenig, Lev D. Gelb

Abstract: The effects of particle roughness and short-ranged non-central forces on colloidal gels are studied using computer simulations in which particles experience a sinusoidal variation in energy as they rotate. The number of minima $n$ and energy scale $K$ are the key parameters; for large $K$ and $n$, particle rotation is strongly hindered, but for small $K$ and $n$ particle rotation is nearly free. A… ▽ More The effects of particle roughness and short-ranged non-central forces on colloidal gels are studied using computer simulations in which particles experience a sinusoidal variation in energy as they rotate. The number of minima $n$ and energy scale $K$ are the key parameters; for large $K$ and $n$, particle rotation is strongly hindered, but for small $K$ and $n$ particle rotation is nearly free. A series of systems are simulated and characterized using fractal dimensions, structure factors, coordination number distributions, bond-angle distributions and linear rheology. When particles rotate easily, clusters restructure to favor dense packings. This leads to longer gelation times and gels with strand-like morphology. The elastic moduli of such gels scale as $G' \propto ω^{0.5}$ at high shear frequencies $ω$. In contrast, hindered particle rotation inhibits restructuring and leads to rapid gelation and diffuse morphology. Such gels are stiffer, with $G'\proptoω^{0.35}$. The viscous moduli $G''$ in the low-barrier and high-barrier regimes scale according to exponents $0.53$ and $0.5$, respectively. The crossover frequency between elastic and viscous behaviors generally increases with the barrier to rotation. These findings agree qualitatively with some recent experiments on heterogeneously-surface particles and with studies of DLCA-type gels and gels of smooth spheres. △ Less

Submitted 3 September, 2019; originally announced September 2019.

Comments: 32 pages, 8 figures

Molecular Valves for Controlling Gas Phase Transport Made from Discrete Angstrom-Sized Pores in Graphene

Authors: Luda Wang, Lee W. Drahushuk, Lauren Cantley, Steven P. Koenig, Xinghui Liu, John Pellegrino, Michael S. Strano, J. Scott Bunch

Abstract: An ability to precisely regulate the quantity and location of molecular flux is of value in applications such as nanoscale 3D printing, catalysis, and sensor design. Barrier materials containing pores with molecular dimensions have previously been used to manipulate molecular compositions in the gas phase, but have so far been unable to offer controlled gas transport through individual pores. Here… ▽ More An ability to precisely regulate the quantity and location of molecular flux is of value in applications such as nanoscale 3D printing, catalysis, and sensor design. Barrier materials containing pores with molecular dimensions have previously been used to manipulate molecular compositions in the gas phase, but have so far been unable to offer controlled gas transport through individual pores. Here, we show that gas flux through discrete angstrom-sized pores in monolayer graphene can be detected and then controlled using nanometer-sized gold clusters, which are formed on the surface of the graphene and can migrate and partially block a pore. In samples without gold clusters, we observe stochastic switching of the magnitude of the gas permeance, which we attribute to molecular rearrangements of the pore. Our molecular valves could be used, for example, to develop unique approaches to molecular synthesis that are based on the controllable switching of a molecular gas flux, reminiscent of ion channels in biological cell membranes and solid state nanopores. △ Less

Submitted 7 July, 2015; v1 submitted 22 June, 2015; originally announced June 2015.

Comments: to appear in Nature Nanotechnology

Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere

Authors: Rostislav A. Doganov, Eoin C. T. O'Farrell, Steven P. Koenig, Yuting Yeo, Angelo Ziletti, Alexandra Carvalho, David K. Campbell, David F. Coker, Kenji Watanabe, Takashi Taniguchi, Antonio H. Castro Neto, Barbaros Özyilmaz

Abstract: Ultrathin black phosphorus, or phosphorene, is the second known elementary two-dimensional material that can be exfoliated from a bulk van der Waals crystal. Unlike graphene it is a semiconductor with a sizeable band gap and its excellent electronic properties make it attractive for applications in transistor, logic, and optoelectronic devices. However, it is also the first widely investigated two… ▽ More Ultrathin black phosphorus, or phosphorene, is the second known elementary two-dimensional material that can be exfoliated from a bulk van der Waals crystal. Unlike graphene it is a semiconductor with a sizeable band gap and its excellent electronic properties make it attractive for applications in transistor, logic, and optoelectronic devices. However, it is also the first widely investigated two dimensional electronic material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical transport properties and to enable future application of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride crystals can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole trans-conductance characteristics. We attribute these results to the formation of oxygen acceptor states in air-exposed samples which drastically perturb the band structure in comparison to the pristine passivated black phosphorus. △ Less

Submitted 3 December, 2014; originally announced December 2014.

Electric field effect in ultrathin black phosphorus

Authors: Steven P. Koenig, Rostislav A. Doganov, Hennrik Schmidt, A. H. Castro Neto, Barbaros Oezyilmaz

Abstract: Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO$_2$ and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm$^2$/V… ▽ More Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO$_2$ and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm$^2$/Vs and drain current modulation of over 10$^3$. At low temperatures the on-off ratio exceeds 10$^5$ and the device exhibits both electron and hole conduction. Using atomic force microscopy we observe significant surface roughening of thin black phosphorus crystals over the course of 1 hour after exfoliation. △ Less

Submitted 23 February, 2014; originally announced February 2014.

Comments: Accepted to Applied Physics Letters, 12 pages, 3 figures

Mechanics of Adhered, Pressurized Graphene Blisters

Authors: Narasimha G. Boddeti, Steven P. Koenig, Rong Long, Jianliang Xiao, J. Scott Bunch, Martin L. Dunn

Abstract: We study the mechanics of pressurized graphene membranes using an experimental configuration that allows the determination of the elasticity of graphene and the adhesion energy between a substrate and a graphene (or other two-dimensional solid) membrane. The test consists of a monolayer graphene membrane adhered to a substrate by surface forces. The substrate is patterned with etched microcavities… ▽ More We study the mechanics of pressurized graphene membranes using an experimental configuration that allows the determination of the elasticity of graphene and the adhesion energy between a substrate and a graphene (or other two-dimensional solid) membrane. The test consists of a monolayer graphene membrane adhered to a substrate by surface forces. The substrate is patterned with etched microcavities of a prescribed volume and when they are covered with the graphene monolayer it traps a fixed number (N) of gas molecules in the microchamber. By lowering the ambient pressure, and thus changing the pressure difference across the graphene membrane, the membrane can be made to bulge and delaminate in a stable manner from the substrate. Here we describe the analysis of the membrane/substrate as a thermodynamic system and explore the behavior of the system over representative experimentally-accessible geometry and loading parameters. We carry out companion experiments and compare them to the theoretical predictions and then use the theory and experiments together to determine the adhesion energy of graphene/SiO2 interfaces. We find an average adhesion energy of 0.24 J/m2 which is lower, but in line with our previously reported values. We assert that this test, which we call the constant N blister test, is a valuable approach to determine the adhesion energy between two-dimensional solid membranes and a substrate, which is an important, but not well-understood aspect of behavior. The test also provides valuable information that can serve as the basis for subsequent research to understand the mechanisms contributing to the observed adhesion energy. Finally, we show how in the limit of a large microcavity, the constant N test approaches the behavior observed in a constant pressure blister test and we provide an experimental observation that suggests this behavior. △ Less

Submitted 3 April, 2013; v1 submitted 3 April, 2013; originally announced April 2013.

Comments: To appear in Journal of Applied Mechanics

Selective Molecular Sieving through Porous Graphene

Authors: Steven P. Koenig, Luda Wang, John Pellegrino, J. Scott Bunch

Abstract: Membranes act as selective barriers and play an important role in processes such as cellular compartmentalization and industrial-scale chemical and gas purification. The ideal membrane should be as thin as possible to maximize flux, mechanically robust to prevent fracture, and have well-defined pore sizes to increase selectivity. Graphene is an excellent starting point for developing size selectiv… ▽ More Membranes act as selective barriers and play an important role in processes such as cellular compartmentalization and industrial-scale chemical and gas purification. The ideal membrane should be as thin as possible to maximize flux, mechanically robust to prevent fracture, and have well-defined pore sizes to increase selectivity. Graphene is an excellent starting point for developing size selective membranes because of its atomic thickness, high mechanical strength, relative inertness, and impermeability to all standard gases. However, pores that can exclude larger molecules, but allow smaller molecules to pass through have to be introduced into the material. Here we show UV-induced oxidative etching can create pores in micrometre-sized graphene membranes and the resulting membranes used as molecular sieves. A pressurized blister test and mechanical resonance is used to measure the transport of a variety of gases (H2, CO2, Ar, N2, CH4, and SF6) through the pores. The experimentally measured leak rates, separation factors, and Raman spectrum agree well with models based on effusion through a small number of angstrom-sized pores. △ Less

Submitted 20 August, 2012; originally announced August 2012.

Comments: to appear in Nature Nanotechnology

Ultrathin Oxide Films by Atomic Layer Deposition on Graphene

Authors: Luda Wang, Jonathan J. Travis, Andrew S. Cavanagh, Xinghui Liu, Steven P. Koenig, Pinshane Y. Huang, Steven M. George, J. Scott Bunch

Abstract: In this paper, a method is presented to create and characterize mechanically robust, free standing, ultrathin, oxide films with controlled, nanometer-scale thickness using Atomic Layer Deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A press… ▽ More In this paper, a method is presented to create and characterize mechanically robust, free standing, ultrathin, oxide films with controlled, nanometer-scale thickness using Atomic Layer Deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pressurized blister test was used to determine that these ultrathin films have a Young's modulus of 154 \pm 13 GPa. This Young's modulus is comparable to much thicker alumina ALD films. This behavior indicates that these ultrathin two-dimensional films have excellent mechanical integrity. The films are also impermeable to standard gases suggesting they are pinhole-free. These continuous ultrathin films are expected to enable new applications in fields such as thin film coatings, membranes and flexible electronics. △ Less

Submitted 20 June, 2012; originally announced June 2012.

Comments: Nano Letters (just accepted)

Ultra-strong Adhesion of Graphene Membranes

Authors: Steven P. Koenig, Narasimha G. Boddeti, Martin L. Dunn, J. Scott Bunch

Abstract: As mechanical structures enter the nanoscale regime, the influence of van der Waals forces increases. Graphene is attractive for nanomechanical systems because its Young's modulus and strength are both intrinsically high, but the mechanical behavior of graphene is also strongly influenced by the van der Waals force. For example, this force clamps graphene samples to substrates, and also holds toge… ▽ More As mechanical structures enter the nanoscale regime, the influence of van der Waals forces increases. Graphene is attractive for nanomechanical systems because its Young's modulus and strength are both intrinsically high, but the mechanical behavior of graphene is also strongly influenced by the van der Waals force. For example, this force clamps graphene samples to substrates, and also holds together the individual graphene sheets in multilayer samples. Here we use a pressurized blister test to directly measure the adhesion energy of graphene sheets with a silicon oxide substrate. We find an adhesion energy of 0.45 \pm 0.02 J/m2 for monolayer graphene and 0.31 \pm 0.03 J/m2 for samples containing 2-5 graphene sheets. These values are larger than the adhesion energies measured in typical micromechanical structures and are comparable to solid/liquid adhesion energies. We attribute this to the extreme flexibility of graphene, which allows it to conform to the topography of even the smoothest substrates, thus making its interaction with the substrate more liquid-like than solid-like. △ Less

Submitted 11 July, 2011; originally announced July 2011.

Comments: to appear in Nature Nanotechnology

Depletion forces between non-spherical objects

Authors: P. -M. König, R. Roth, S. Dietrich

Abstract: We extend the insertion approach for calculating depletion potentials to the case of non-spherical solutes. Instead of a brute-force calculation we suggest to employ the recently developed curvature expansion of density profiles close to complexly shaped walls. The approximations introduced in the calculation by the use of the curvature expansion and of weight functions for non-spherical objects… ▽ More We extend the insertion approach for calculating depletion potentials to the case of non-spherical solutes. Instead of a brute-force calculation we suggest to employ the recently developed curvature expansion of density profiles close to complexly shaped walls. The approximations introduced in the calculation by the use of the curvature expansion and of weight functions for non-spherical objects can be tested independently. As an application for our approach we calculate and discuss the depletion potential between two hard oblate ellipsoids in a solvent of hard spheres. For this system we calculate the entropic force and torque acting on the objects. △ Less

Submitted 5 July, 2006; originally announced July 2006.

Comments: 8 pages, 5 figures

Morphological Thermodynamics of Fluids: Shape Dependence of Free Energies

Authors: P. -M. König, R. Roth, K. R. Mecke

Abstract: We examine the dependence of a thermodynamic potential of a fluid on the geometry of its container. If motion invariance, continuity, and additivity of the potential are fulfilled, only four morphometric measures are needed to describe fully the influence of an arbitrarily shaped container on the fluid. These three constraints can be understood as a more precise definition for the conventional t… ▽ More We examine the dependence of a thermodynamic potential of a fluid on the geometry of its container. If motion invariance, continuity, and additivity of the potential are fulfilled, only four morphometric measures are needed to describe fully the influence of an arbitrarily shaped container on the fluid. These three constraints can be understood as a more precise definition for the conventional term "extensive" and have as a consequence that the surface tension and other thermodynamic quantities contain, beside a constant term, only contributions linear in the mean and Gaussian curvature of the container and not an infinite number of curvatures as generally assumed before. We verify this numerically in the entropic system of hard spheres bounded by a curved wall. △ Less

Submitted 29 September, 2004; originally announced September 2004.

Comments: 4 pages, 3 figures, accepted for publication in PRL

High temperature susceptibility in electron doped Ca1-xYxMnO3: Double Exchange vs Superexchange

Authors: H. Aliaga, M. T. Causa, M. Tovar, A. Butera, B. Alascio, D. Vega, G. Leyva, G. Polla, P. Konig

Abstract: We present a study of the magnetic properties of the electron doped manganites Ca1-xYxMnO3 (for 0<=x<=0.25) in the paramagnetic regime. For the less doped samples (x<=0.1) the magnetic susceptibility, c(T), follows a Curie-Weiss (CW) law only for T > 450 K and, below this temperature, c^-1(T) shows a ferrimagnetic-like curvature. We approached the discussion of these results in terms of a simple… ▽ More We present a study of the magnetic properties of the electron doped manganites Ca1-xYxMnO3 (for 0<=x<=0.25) in the paramagnetic regime. For the less doped samples (x<=0.1) the magnetic susceptibility, c(T), follows a Curie-Weiss (CW) law only for T > 450 K and, below this temperature, c^-1(T) shows a ferrimagnetic-like curvature. We approached the discussion of these results in terms of a simple mean-field model where double exchange, approximated by a ferromagnetic Heisenberg-like interaction between Mn3+ and Mn4+ ions, competes with classical superexchange. For higher levels of doping (x>=0.15), the CW behaviour is observed down to the magnetic ordering temperature (Tmo) and a better description of c(T) was obtained by assuming full delocalization of the eg electrons. In order to explore the degree of delocalization as a function of T and x, we analyzed the problem through Montecarlo simulations. Within this picture we found that at high T the electrons doped are completely delocalized but, when Tmo is approached, they form magnetic polarons of large spin that cause the observed curvature in c^-1(T) for x<=0.1. △ Less

Submitted 12 November, 2002; originally announced November 2002.

Comments: 15 pages, 10 figures, Submitted to J. Physics: Condensed Matter (06/28/02)

Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures

Authors: J. Könemann, P. König, T. Schmidt, E. McCann, V. I. Fal'ko, R. J. Haug

Abstract: Measurements of resonant tunneling through a localized impurity state are used to probe fluctuations in the local density of states of heavily doped GaAs. The measured differential conductance is analyzed in terms of correlation functions with respect to voltage. A qualitative picture based on the scaling theory of Thouless is developed to relate the observed fluctuations to the statistics of si… ▽ More Measurements of resonant tunneling through a localized impurity state are used to probe fluctuations in the local density of states of heavily doped GaAs. The measured differential conductance is analyzed in terms of correlation functions with respect to voltage. A qualitative picture based on the scaling theory of Thouless is developed to relate the observed fluctuations to the statistics of single particle wavefunctions. In a quantitative theory correlation functions are calculated. By comparing the experimental and theoretical correlation functions the effective dimensionality of the emitter is analyzed and the dependence of the inelastic lifetime on energy is extracted. △ Less

Submitted 2 May, 2001; originally announced May 2001.

Comments: 41 pages, 14 figures

Journal ref: Phys. Rev. B 64, 155314 (2001)

Double Exchange in Electron Doped Ca1-xYxMnO3 Manganites

Authors: H. Aliaga, M. T. Causa, A. Butera, B. Alascio, H. Salva, M. Tovar D. Vega, G. Polla, G. Leyva, P. Konig

Abstract: We have studied structural, magnetic and transport properties as a function of temperature and magnetic field in the electron doped manganite YxCa1-xMnO3, for 0<x<0.25. We found that in the paramagnetic regime, the magnetic susceptibility, χ, deviates substantially from a Curie-Weiss law for x>0. With a simple model where antiferromagnetic (AF) superexchange and ferromagnetic (FM) double exchang… ▽ More We have studied structural, magnetic and transport properties as a function of temperature and magnetic field in the electron doped manganite YxCa1-xMnO3, for 0<x<0.25. We found that in the paramagnetic regime, the magnetic susceptibility, χ, deviates substantially from a Curie-Weiss law for x>0. With a simple model where antiferromagnetic (AF) superexchange and ferromagnetic (FM) double exchange (DE) compete, we fit the experimental χ(x, T) obtaining parameter values which indicate that the FM-DE interaction is about twice as intense as the AF interaction. In the ordered phase, the H-dependence of the magnetization M(x,T) is explained in terms of magnetic polarons. We propose that the displacement of the eg electrons (in the G-type AF background) causes the alignement of the polaron with H. Signatures of polaronic behavior were also found in the x and T dependence of the electric resistivity. △ Less

Submitted 13 September, 2001; v1 submitted 19 October, 2000; originally announced October 2000.

Comments: 8 pages, 10 figures, updated 07/05/00

Measurement of the energy dependence of phase relaxation by single electron tunneling

Authors: P. König, J. Könemann, T. Schmidt, E. McCann, V. I. Fal'ko, R. J. Haug

Abstract: Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasi-particle relaxation in the emitter can be extracted from the damping of the fluctuations of the local density of states (LDOS). At larger magnetic fields Zeeman splitting is observed. Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasi-particle relaxation in the emitter can be extracted from the damping of the fluctuations of the local density of states (LDOS). At larger magnetic fields Zeeman splitting is observed. △ Less

Submitted 4 October, 2000; originally announced October 2000.

Comments: 2 pages, 4 figures; 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 2000

Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature

Authors: P. König, U. Zeitler, J. Könemann, T. Schmidt, R. J. Haug

Abstract: We have performed temperature dependent tunneling experiments through a single impurity in an asymmetric vertical double barrier tunneling structure. In particular in the charging direction we observe at zero magnetic field a clear shift in the onset voltage of the resonant tunneling current through the impurity. With a magnetic field applied the shift starts to disappear. The experimental obser… ▽ More We have performed temperature dependent tunneling experiments through a single impurity in an asymmetric vertical double barrier tunneling structure. In particular in the charging direction we observe at zero magnetic field a clear shift in the onset voltage of the resonant tunneling current through the impurity. With a magnetic field applied the shift starts to disappear. The experimental observations are explained in terms of resonant tunneling through a spin degenerate impurity level. △ Less

Submitted 22 September, 2000; originally announced September 2000.

Comments: 2 pages, 3 figures; 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 2000

Spin Effects in the Local Density of States of GaAs

Authors: P. König, T. Schmidt, R. J. Haug

Abstract: We present spin-resolved measurements of the local density of states in Si doped GaAs. Both spin components exhibit strong mesoscopic fluctuations. In the magnetic quantum limit, the main features of the spin-up and spin-down components of the local density of states are found to be identical apart from Zeeman splitting. Based on this observation, we introduce a mesoscopic method to measure the… ▽ More We present spin-resolved measurements of the local density of states in Si doped GaAs. Both spin components exhibit strong mesoscopic fluctuations. In the magnetic quantum limit, the main features of the spin-up and spin-down components of the local density of states are found to be identical apart from Zeeman splitting. Based on this observation, we introduce a mesoscopic method to measure the $g$-factor in a material where macroscopic methods are severely restricted by disorder. Differences between the spin-up and spin-down components are discussed in terms of spin relaxation due to spin-orbit coupling. △ Less

Submitted 11 April, 2000; originally announced April 2000.

Comments: 4 pages and 5 figures

Energy Dependence of Quasi-Particle Relaxation in a Disordered Fermi Liquid

Authors: T. Schmidt, P. König, E. McCann, Vladimir I. Fal'ko, R. J. Haug

Abstract: A spectroscopic method is applied to measure the inelastic quasi-particle relaxation rate in a disordered Fermi liquid. The quasi-particle relaxation rate, $γ$ is deduced from the magnitude of fluctuations in the local density of states, which are probed using resonant tunneling through a localized impurity state. We study its dependence on the excitation energy $E$ measured from the Fermi level… ▽ More A spectroscopic method is applied to measure the inelastic quasi-particle relaxation rate in a disordered Fermi liquid. The quasi-particle relaxation rate, $γ$ is deduced from the magnitude of fluctuations in the local density of states, which are probed using resonant tunneling through a localized impurity state. We study its dependence on the excitation energy $E$ measured from the Fermi level. In a disordered metal (heavily doped GaAs) we find $γ\propto E^{3/2}$ within the experimentally accessible energy interval, in agreement with the Altshuler-Aronov theory for electron-electron interactions in diffusive conductors. △ Less

Submitted 13 November, 2000; v1 submitted 11 April, 2000; originally announced April 2000.

Comments: 9 pages and 5 figures