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Ferroelectricity in 6 Angstrom-Thick Two-dimensional Ga$_2$O$_3$
Authors:
Tong Jiang,
Han Chen,
Yubo Yuan,
Xiang Xu,
Junwei Cao,
Hao Wang,
Xuechun Sun,
Junshuai Li,
Yaqing Ma,
Huaze Zhu,
Wenbin Li,
Wei Kong
Abstract:
Atomic-scale ferroelectric thin films hold great promise for high-density, low-power applications but face stability and voltage scaling challenges at extreme thinness. Here, we demonstrate ferroelectricity in single-crystalline two-dimensional (2D) Ga$_2$O$_3$, an ultra-wide-bandgap semiconductor, at just 6 angstrom thickness, exhibiting exceptional retention and thermal stability. We show that e…
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Atomic-scale ferroelectric thin films hold great promise for high-density, low-power applications but face stability and voltage scaling challenges at extreme thinness. Here, we demonstrate ferroelectricity in single-crystalline two-dimensional (2D) Ga$_2$O$_3$, an ultra-wide-bandgap semiconductor, at just 6 angstrom thickness, exhibiting exceptional retention and thermal stability. We show that epitaxial beta-Ga$_2$O$_3$ can be exfoliated down to a half-unit cell thickness via a self-limiting mechanism, enabling a biaxial strain-induced phase transition into a novel ferroelectric layered structure. Strain modulation enables the reduction of polarization switching voltage to 0.8 V, meeting CMOS voltage scaling requirements. Theoretical calculations reveal that switching is driven by covalent bond reconstruction, effectively countering depolarization and enhancing stability. Additionally, we integrate ferroelectric 2D Ga$_2$O$_3$ onto silicon using a low-temperature, back-end-of-line-compatible process. This work advances the exploration of sub-nanometer ferroelectrics, paving the way for high-density, low-power, non-volatile applications seamlessly integrated with advanced silicon technology.
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Submitted 26 June, 2025;
originally announced June 2025.
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A dual-scale stochastic analysis framework for creep failure considering microstructural randomness
Authors:
Weichen Kong,
Yanwei Dai,
Xiang Zhang,
Yinghua Liu
Abstract:
Creep failure under high temperatures is a complex multiscale and multi-mechanism issue involving inherent microstructural randomness. To investigate the effect of microstructures on the uniaxial/multiaxial creep failure, a dual-scale stochastic analysis framework is established to introduce the grain boundary (GB) characteristics into the macroscopic analysis. The nickel-base superalloy Inconel 6…
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Creep failure under high temperatures is a complex multiscale and multi-mechanism issue involving inherent microstructural randomness. To investigate the effect of microstructures on the uniaxial/multiaxial creep failure, a dual-scale stochastic analysis framework is established to introduce the grain boundary (GB) characteristics into the macroscopic analysis. The nickel-base superalloy Inconel 617 is considered in this study. Firstly, the damage mechanisms of GBs are investigated based on the crystal plasticity finite element (CPFE) method and cohesive zone model (CZM). Subsequently, based on the obtained GB damage evolution, a novel Monte Carlo (MC) approach is proposed to establish the relationship between the GB orientation and area distribution and macroscopic creep damage. Finally, a dual-scale stochastic multiaxial creep damage model is established to incorporate the influence of the random GB orientation and area distribution. With the numerical application of the proposed creep damage model, the random initiation and growth of creep cracks in the uniaxial tensile specimen and the pressurized tube are captured and analyzed. The proposed stochastic framework effectively considers the inherent randomness introduced by GB characteristics and efficiently realizes full-field multiscale calculations. It also shows its potential applications in safety evaluation and life prediction of creep components and structures under high temperatures.
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Submitted 1 April, 2025;
originally announced April 2025.
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Air-stable lithiation engineering of $\mathrm{MoS}_{2}$ for direct-bandgap multilayers
Authors:
Qi Fu,
Yichi Zhang,
Jichuang Shen,
Siyuan Hong,
Jie Wang,
Chen Wang,
Jingyi Shen,
Wei Kong,
Guolin Zheng,
Jun Yan,
Jie Wu,
Changxi Zheng
Abstract:
Due to its sizable direct bandgap and strong light-matter interactions, the preparation of monolayer $\mathrm{MoS}_{2}$ has attracted significant attention and intensive research efforts. However, multilayer $\mathrm{MoS}_{2}$ is largely overlooked because of its optically inactive indirect bandgap caused by interlayer coupling. It is highly desirable to modulate and decrease the interlayer coupli…
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Due to its sizable direct bandgap and strong light-matter interactions, the preparation of monolayer $\mathrm{MoS}_{2}$ has attracted significant attention and intensive research efforts. However, multilayer $\mathrm{MoS}_{2}$ is largely overlooked because of its optically inactive indirect bandgap caused by interlayer coupling. It is highly desirable to modulate and decrease the interlayer coupling so that each layer in multilayer $\mathrm{MoS}_{2}$ can exhibit a monolayer-like direct-gap behavior. Here, we demonstrate the nanoprobe fabrication of $\mathrm{Li}_{x}\mathrm{MoS}_{2}$-based multilayers exhibiting a direct bandgap and strong photoluminescence emission from tightly bound excitons and trions. The fabrication is facilitated by our newly developed Li-ion platform, featuring tip-induced Li intercalation, air stability and rewritability. Raman characterizations reveal that controlled Li intercalation effectively transforms multilayer $\mathrm{MoS}_{2}$ into the stack of multiple monolayers, leading to a 26-fold enhancement of photoluminescence, compared to a monolayer. This intercalation result is different from existing observations of transforming $\mathrm{MoS}_{2}$ multilayers into metallic phases.
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Submitted 1 March, 2025;
originally announced March 2025.
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Wafer-scale Integration of Single-Crystalline MoS$_2$ for Flexible Electronics Enabled by Oxide Dry-transfer
Authors:
Xiang Xu,
Yitong Chen,
Jichuang Shen,
Qi Huang,
Tong Jiang,
Han Chen,
Huaze Zhu,
Yaqing Ma,
Hao Wang,
Wenhao Li,
Chen Ji,
Dingwei Li,
Siyu Zhang,
Yan Wang,
Bowen Zhu,
Wei Kong
Abstract:
Atomically thin, single-crystalline transition metal dichalcogenides (TMDCs) grown via chemical vapor deposition (CVD) on sapphire substrates exhibit exceptional mechanical and electrical properties, positioning them as excellent channel materials for flexible electronics. However, conventional wet-transfer processes for integrating these materials onto flexible substrates often introduce surface…
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Atomically thin, single-crystalline transition metal dichalcogenides (TMDCs) grown via chemical vapor deposition (CVD) on sapphire substrates exhibit exceptional mechanical and electrical properties, positioning them as excellent channel materials for flexible electronics. However, conventional wet-transfer processes for integrating these materials onto flexible substrates often introduce surface contamination, significantly degrading device performance. Here, we present a wafer-scale dry-transfer technique using a high-dielectric oxide as the transfer medium, enabling the integration of 4-inch single-crystalline MoS$_2$ onto flexible substrates. This method eliminates contact with polymers or solvents, thus preserving the intrinsic electronic properties of MoS$_2$. As a result, the fabricated flexible field-effect transistor (FET) arrays exhibit remarkable performance, with a mobility of 117 cm$^2$/Vs, a subthreshold swing of 68.8 mV dec$^{-1}$, and an ultra-high current on/off ratio of $10^{12}$-values comparable to those achieved on rigid substrates. Leveraging the outstanding electrical characteristics, we demonstrated MoS$_2$-based flexible inverters operating in the subthreshold regime, achieving both a high gain of 218 and ultra-low power consumption of 1.4 pW/$μ$m. Additionally, we integrated a flexible tactile sensing system driven by active-matrix MoS$_2$ FET arrays onto a robotic gripper, enabling real-time object identification. These findings demonstrate the simultaneous achievement of high electrical performance and flexibility, highlighting the immense potential of single-crystalline TMDC-based flexible electronics for real-world applications.
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Submitted 23 January, 2025;
originally announced January 2025.
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Phase engineering of giant second harmonic generation in Bi$_2$O$_2$Se
Authors:
Zhefeng Lou,
Yingjie Zhao,
Zhihao Gong,
Ziye Zhu,
Mengqi Wu,
Tao Wang,
Jialu Wang,
Haoyu Qi,
Huakun Zuo,
Zhuokai Xu,
Jichuang Shen,
Zhiwei Wang,
Lan Li,
Shuigang Xu,
Wei Kong,
Wenbin Li,
Xiaorui Zheng,
Hua Wang,
Xiao Lin
Abstract:
Two-dimensional (2D) materials with remarkable second-harmonic generation (SHG) hold promise for future on-chip nonlinear optics. Relevant materials with both giant SHG response and environmental stability are long-sought targets. Here, we demonstrate the enormous SHG from the phase engineering of a high-performance semiconductor, Bi$_2$O$_2$Se (BOS), under uniaxial strain. SHG signals captured in…
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Two-dimensional (2D) materials with remarkable second-harmonic generation (SHG) hold promise for future on-chip nonlinear optics. Relevant materials with both giant SHG response and environmental stability are long-sought targets. Here, we demonstrate the enormous SHG from the phase engineering of a high-performance semiconductor, Bi$_2$O$_2$Se (BOS), under uniaxial strain. SHG signals captured in strained 20 nm-BOS films exceed those of NbOI$_2$ and NbOCl$_2$ of similar thickness by a factor of 10, and are four orders of magnitude higher than monolayer-MoS$_2$, resulting in a significant second-order nonlinear susceptibility on the order of 1 nm V$^{-1}$. Intriguingly, the strain enables continuous adjustment of the ferroelectric phase transition across room temperature. Consequently, an exceptionally large tunability of SHG, approximately six orders of magnitude, is achieved through strain or thermal modulation. This colossal SHG, originating from the geometric phase of Bloch wave functions and coupled with sensitive tunability through multiple approaches in this air-stable 2D semiconductor, opens new possibilities for designing chip-scale, switchable nonlinear optical devices.
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Submitted 25 July, 2024;
originally announced July 2024.
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Coexistence of surface oxygen vacancy and interface conducting states in LaAlO3/SrTiO3 revealed by low-angle resonant soft X-ray scattering
Authors:
Ming Yang,
Ariando Ariando,
Caozheng Diao,
James C Lee,
Kaushik Jayaraman,
Mansoor B A Jalil,
Serban Smadici,
Shengwei Zeng,
Jun Zhou,
Weilong Kong,
Mark B. H. Breese,
Sankar Dhar,
Yuan Ping Feng,
Peter Abbamonte,
Thirumalai Venkatesan,
Andrivo Rusydi
Abstract:
Oxide heterostructures have shown rich physics phenomena, particularly in the conjunction of exotic insulator-metal transition (IMT) at the interface between polar insulator LaAlO3 and non-polar insulator SrTiO3 (LaAlO3/SrTiO3). Polarization catastrophe model has suggested an electronic reconstruction yielding to metallicity at both the interface and surface. Another scenario is the occurrence of…
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Oxide heterostructures have shown rich physics phenomena, particularly in the conjunction of exotic insulator-metal transition (IMT) at the interface between polar insulator LaAlO3 and non-polar insulator SrTiO3 (LaAlO3/SrTiO3). Polarization catastrophe model has suggested an electronic reconstruction yielding to metallicity at both the interface and surface. Another scenario is the occurrence of surface oxygen vacancy at LaAlO3 (surface-Ov), which has predicted surface-to-interface charge transfer yielding metallic interface but insulating surface. To clarify the origin of IMT, one should probe surface-Ov and the associated electronic structures at both the surface and the buried interface simultaneously. Here, using low-angle resonant soft X-ray scattering (LA-RSXS) supported with first-principles calculations, we reveal the co-existence of the surface-Ov state and the interface conducting state only in conducting LaAlO3/SrTiO3 (001) films. Interestingly, both the surface-Ov state and the interface conducting state are absent for the insulating film. As a function of Ov density, while the surface-Ov state is responsible for the IMT, the spatial charge distribution is found responsible for a transition from two-dimensional-like to three-dimensional-like conducting accompanied by spectral weight transfer, revealing the importance of electronic correlation. Our results show the importance of surface-Ov in determining interface properties and provides a new strategy in utilizing LA-RSXS to directly probe the surface and buried interface electronic properties in complex oxide heterostructures.
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Submitted 8 June, 2023;
originally announced June 2023.
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Experimental Implementation of Short-Path Non-adiabatic Geometric Gates in a Superconducting Circuit
Authors:
Xin-Xin Yang,
Liang-Liang Guo,
Hai-Feng Zhang,
Lei Du,
Chi Zhang,
Hao-Ran Tao,
Yong Chen,
Peng Duan,
Zhi-Long Jia,
Wei-Cheng Kong,
Guo-Ping Guo
Abstract:
The non-adiabatic geometric quantum computation (NGQC) has attracted a lot of attention for noise-resilient quantum control. However, previous implementations of NGQC require long evolution paths that make them more vulnerable to incoherent errors than their dynamical counterparts.In this work, we experimentally realize a universal short-path non-adiabatic geometric gate set (SPNGQC) with a 2-time…
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The non-adiabatic geometric quantum computation (NGQC) has attracted a lot of attention for noise-resilient quantum control. However, previous implementations of NGQC require long evolution paths that make them more vulnerable to incoherent errors than their dynamical counterparts.In this work, we experimentally realize a universal short-path non-adiabatic geometric gate set (SPNGQC) with a 2-times shorter evolution path on a superconducting quantum processor. Characterizing with both quantum process tomography and randomized benchmarking methods, we report an average single-qubit gate fidelity of 99.86% and a two-qubit gate fidelity of 97.9%. Additionally, we demonstrate superior robustness of single-qubit SP-NGQC gate to Rabi frequency error in some certain parameter space by comparing their performance to those of the dynamical gates and the former NGQC gates.
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Submitted 22 March, 2023;
originally announced March 2023.
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Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy
Authors:
Hyunseok Kim,
Yunpeng Liu,
Kuangye Lu,
Celesta S. Chang,
Kuan Qiao,
Ki Seok Kim,
Bo-In Park,
Junseok Jeong,
Menglin Zhu,
Jun Min Suh,
Yongmin Baek,
You Jin Ji,
Sungsu Kang,
Sangho Lee,
Ne Myo Han,
Chansoo Kim,
Chanyeol Choi,
Xinyuan Zhang,
Haozhe Wang,
Lingping Kong,
Jungwon Park,
Kyusang Lee,
Geun Young Yeom,
Sungkyu Kim,
Jinwoo Hwang
, et al. (4 additional authors not shown)
Abstract:
Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to…
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Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to harvest epitaxial layers using practical processes. Here, we demonstrate a method to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, 2D materials are directly formed on III-N and III-V substrates in epitaxy systems, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of 2D materials and epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because 2D materials allow peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.
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Submitted 7 April, 2022;
originally announced April 2022.
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UV-Visible Absorption Spectra of Solvated Molecules by Quantum Chemical Machine Learning
Authors:
Zekun Chen,
Fernanda C. Bononi,
Charles A. Sievers,
Wang-Yeuk Kong,
Davide Donadio
Abstract:
Predicting UV-visible absorption spectra is essential to understanding photochemical processes and designing energy materials. Quantum chemical methods can deliver accurate calculations of UV-visible absorption spectra, but they are computationally expensive, especially for large systems or when one computes line shapes from thermal averages. Here, we present an approach to predicting UV-visible a…
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Predicting UV-visible absorption spectra is essential to understanding photochemical processes and designing energy materials. Quantum chemical methods can deliver accurate calculations of UV-visible absorption spectra, but they are computationally expensive, especially for large systems or when one computes line shapes from thermal averages. Here, we present an approach to predicting UV-visible absorption spectra of solvated aromatic molecules by quantum chemistry (QC) and machine learning (ML). We show that a ML model, trained on the high-level QC calculation of the excitation energy of a set of aromatic molecules, can accurately predict the line shape of the lowest-energy UV-visible absorption band of several related molecules with less than 0.1 eV deviation with respect to reference experimental spectra. Applying linear decomposition analysis on the excitation energies, we unveil that our ML models probe vertical excitations of these aromatic molecules primarily by learning the atomic environment of their phenyl rings, which align with the physical origin of the $π\rightarrowπ^\star$ electronic transition. Our study provides an effective workflow that combines ML with quantum chemical methods to accelerate the calculations of UV-visible absorption spectra for various molecular systems.
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Submitted 24 June, 2022; v1 submitted 3 December, 2021;
originally announced December 2021.
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Experimental Evidence of t2g Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization
Authors:
Ganesh Ji Omar,
Weilong Kong,
Hariom Jani,
Mengsha Li,
Jun Zhou,
Zhi Shiuh Lim,
Saurav Prakash,
Shengwei Zeng,
Sonu Hooda,
Thirumalai Venkatesan,
Yuan Ping Feng,
Stephen J. Pennycook,
Shen Lei,
A. Ariando
Abstract:
We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in th…
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We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in the absence of an external bias. This observation is verified through high-resolution electron microscopy, magneto-transport and first-principles calculations. Our results open hitherto unexplored avenues of controlling Rashba interaction to design next-generation spin-orbitronics.
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Submitted 5 November, 2022; v1 submitted 13 October, 2021;
originally announced October 2021.
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Magnetotransport in Fe3O4 nanoparticle arrays dominated by non-collinear surface spins
Authors:
Seongjin Jang,
Wenjie Kong,
Hao Zeng
Abstract:
Magnetotransport in arrays of monodisperse magnetite nanoparticles has been studied as a function of annealing temperatures. Charge transport mechanisms change from thermally assisted interparticle tunneling to hopping between Fe-sites within the particle as the interparticle spacing is decreased. Despite this difference, magnetoresistance (MR) as a function of field shows a ubiquitous behavior do…
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Magnetotransport in arrays of monodisperse magnetite nanoparticles has been studied as a function of annealing temperatures. Charge transport mechanisms change from thermally assisted interparticle tunneling to hopping between Fe-sites within the particle as the interparticle spacing is decreased. Despite this difference, magnetoresistance (MR) as a function of field shows a ubiquitous behavior dominated by non-collinear surface spins. All MR as a function of field can be fitted accurately by a Langevin-like function.
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Submitted 10 October, 2021;
originally announced October 2021.
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Tunable Rashba spin-orbit coupling and its interplay with multiorbital effect and magnetic ordering at oxide interfaces
Authors:
Weilong Kong,
Tong Yang,
Jun Zhou,
Yong Zheng Luo,
Jingsheng Chen,
Lei Shen,
Yong Jiang,
Yuan Ping Feng,
Ming Yang
Abstract:
The complex oxide heterostructures such as LaAlO3/SrTiO3 (LAO/STO) interface are paradigmatic platforms to explore emerging multi-degrees of freedom coupling and the associated exotic phenomena. In this study, we reveal the effects of multiorbital and magnetic ordering on Rashba spin-orbit coupling (SOC) at the LAO/STO (001) interface. Based on first-principles calculations, we show that the Rashb…
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The complex oxide heterostructures such as LaAlO3/SrTiO3 (LAO/STO) interface are paradigmatic platforms to explore emerging multi-degrees of freedom coupling and the associated exotic phenomena. In this study, we reveal the effects of multiorbital and magnetic ordering on Rashba spin-orbit coupling (SOC) at the LAO/STO (001) interface. Based on first-principles calculations, we show that the Rashba spin splitting near the conduction band edge can be tuned substantially by the interfacial insulator-metal transition due to the multiorbital effect of the lowest t_2g bands. We further unravel a competition between Rashba SOC and intrinsic magnetism, in which the Rashba SOC induced spin polarization is suppressed by the interfacial magnetic ordering. These results deepen our understanding of intricate electronic and magnetic reconstruction at the perovskite oxide interfaces and shed light on the engineering of oxide heterostructures for all-oxides-based spintronic devices.
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Submitted 19 January, 2021;
originally announced January 2021.
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Tunable spin and orbital polarization in SrTiO3-based heterostructures
Authors:
Cong Son Ho,
Weilong Kong,
Ming Yang,
Andrivo Rusydi,
Mansoor B. A. Jalil
Abstract:
We formulate the effective Hamiltonian of Rashba spin-orbit coupling (RSOC) in $\mathrm{LaAlO_3/SrTiO_3}$ (LAO/STO) heterostructures. We derive analytical expressions of properties, e.g., Rashba parameter, effective mass, band edge energy and orbital occupancy, as functions of material and tunable heterostructure parameters. While linear RSOC is dominant around the $Γ$-point, cubic RSOC becomes si…
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We formulate the effective Hamiltonian of Rashba spin-orbit coupling (RSOC) in $\mathrm{LaAlO_3/SrTiO_3}$ (LAO/STO) heterostructures. We derive analytical expressions of properties, e.g., Rashba parameter, effective mass, band edge energy and orbital occupancy, as functions of material and tunable heterostructure parameters. While linear RSOC is dominant around the $Γ$-point, cubic RSOC becomes significant at the higher-energy anti-crossing region. We find that linear RSOC stems from the structural inversion asymmetry (SIA), while the cubic term is induced by both SIA and bulk asymmetry. Furthermore, the SOC strength shows a striking dependence on the tunable heterostructure parameters such as STO thickness and the interfacial electric field which is ascribed to the quantum confinement effect near the LAO/STO interface. The calculated values of the linear and cubic RSOC are in agreement with previous experimental results.
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Submitted 16 June, 2020;
originally announced June 2020.
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Discovery of Hidden Classes of Layered Electrides by Extensive High-throughput Materials Screening
Authors:
Jun Zhou,
Lei Shen,
Ming Yang,
Haixia Cheng,
Weilong Kong,
Yuan Ping Feng
Abstract:
Despite their extraordinary properties, electrides are still a relatively unexplored class of materials with only a few compounds grown experimentally. Especially for layered electrides, the current researches mainly focus on several isostructures of Ca2N with similar interlayer two-dimensional (2D) anionic electrons. An extensive screening for different layered electrides is still missing. Here,…
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Despite their extraordinary properties, electrides are still a relatively unexplored class of materials with only a few compounds grown experimentally. Especially for layered electrides, the current researches mainly focus on several isostructures of Ca2N with similar interlayer two-dimensional (2D) anionic electrons. An extensive screening for different layered electrides is still missing. Here, by screening materials with anionic electrons for the structures in Materials Project, we uncover 12 existing materials as new layered electrides. Remarkably, these layered electrides demonstrate completely different properties from Ca2N. For example, unusual fully spin-polarized zero-dimensional (0D) anionic electrons are shown in metal halides with MoS2-like structures; unique one-dimensional (1D) anionic electrons are confined within the tubes of the quasi-1D structures; a coexistence of magnetic and non-magnetic anionic electrons is found in ZrCl-like structures and a new ternary Ba2LiN with both 0D and 1D anionic electrons. These materials not only significantly increase the pool of experimentally synthesizable layered electrides but also are promising to be exfoliated into advanced 2D materials.
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Submitted 15 January, 2019;
originally announced January 2019.
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Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature
Authors:
Tengteng Lu,
Zhen Li,
Chao Luo,
Jun Xu,
Weicheng Kong,
Guoping Guo
Abstract:
Previous cryogenic electronics studies are most above 4.2K. In this paper we present the cryogenic characterization of a 0.18μm standard bulk CMOS technology(1.8V and 5V) at sub-kelvin temperature around 270mK. PMOS and NMOS devices with different width to length ratios(W/L) are tested and characterized under various bias conditions at temperatures from 300K to 270mK. It is shown that the 0.18μm s…
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Previous cryogenic electronics studies are most above 4.2K. In this paper we present the cryogenic characterization of a 0.18μm standard bulk CMOS technology(1.8V and 5V) at sub-kelvin temperature around 270mK. PMOS and NMOS devices with different width to length ratios(W/L) are tested and characterized under various bias conditions at temperatures from 300K to 270mK. It is shown that the 0.18μm standard bulk CMOS technology is still working at sub-kelvin temperature. The kink effect and current overshoot phenomenon are observed at sub-kelvin temperature. Especially, current overshoot phenomenon in PMOS devices at sub-kelvin temperature is shown for the first time. The transfer characteristics of large and thin-oxide devices at sub-kelvin temperature are modeled using the simplified EKV model. This work facilitates the CMOS circuits design and the integration of CMOS circuits with silicon-based quantum chips at extremely low temperatures.
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Submitted 30 November, 2018;
originally announced November 2018.
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Cryogenic Characerization and Modeling of Standard CMOS down to Liquid Helium Temperature for Quantum Computing
Authors:
Zhen Li,
Chao Luo,
Tengteng Lu,
Jun Xu,
Weicheng Kong,
Guoping Guo
Abstract:
Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias conditions at temperatures ranging from 300K down to 4.2K. We extracted their fundamental physical parameters and developed a compact model based on BSIM3V3. In add…
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Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias conditions at temperatures ranging from 300K down to 4.2K. We extracted their fundamental physical parameters and developed a compact model based on BSIM3V3. In addition to their I-V characteristics, threshold voltage(Vth) values, on/off current ratio, transconductance of the MOS transistors, and resistors on chips are measured at temperatures from 300K down to 4.2K. A simple subcircuit was built to correct the kink effect. This work provides experimental evidence for implementation of cryogenic CMOS technology, a valid industrial tape-out process model, and romotes the application of integrated circuits in cryogenic environments, including quantum measurement and control systems for quantum chips at very low temperatures.
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Submitted 17 January, 2019; v1 submitted 28 November, 2018;
originally announced November 2018.
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Coherent phonon Rabi oscillations with a high frequency carbon nanotube phonon cavity
Authors:
Dong Zhu,
Xin-He Wang,
Wei-Cheng Kong,
Guang-Wei Deng,
Jiang-Tao Wang,
Hai-Ou Li,
Gang Cao,
Ming Xiao,
Kai-Li Jiang,
Xing-Can Dai,
Guang-Can Guo,
Franco Nori,
Guo-Ping Guo
Abstract:
Phonon-cavity electromechanics allows the manipulation of mechanical oscillations similar to photon-cavity systems. Many advances on this subject have been achieved in various materials. In addition, the coherent phonon transfer (phonon Rabi oscillations) between the phonon cavity mode and another oscillation mode has attracted many interest in nano-science. Here we demonstrate coherent phonon tra…
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Phonon-cavity electromechanics allows the manipulation of mechanical oscillations similar to photon-cavity systems. Many advances on this subject have been achieved in various materials. In addition, the coherent phonon transfer (phonon Rabi oscillations) between the phonon cavity mode and another oscillation mode has attracted many interest in nano-science. Here we demonstrate coherent phonon transfer in a carbon nanotube phonon-cavity system with two mechanical modes exhibiting strong dynamical coupling. The gate-tunable phonon oscillation modes are manipulated and detected by extending the red-detuned pump idea of photonic cavity electromechanics. The first- and second-order coherent phonon transfers are observed with Rabi frequencies 591 kHz and 125 kHz, respectively. The frequency quality factor product fQ_m~2=10^12 Hz achieved here is larger thank k_B T_base/h, which may enable the future realization of Rabi oscillations in the quantum regime.
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Submitted 9 January, 2017;
originally announced January 2017.
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Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides
Authors:
Fabian Cadiz,
Cedric Robert,
Gang Wang,
Wilson Kong,
Xi Fan,
Mark Blei,
Delphine Lagarde,
Maxime Gay,
Marco Manca,
Takashi Taniguchi,
Kenji Watanabe,
Thierry Amand,
Xavier Marie,
Pierre Renucci,
Sefaattin Tongay,
Bernhard Urbaszek
Abstract:
The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical…
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The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced doping is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the $μ$W/$μ$m$^2$ range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy.
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Submitted 30 June, 2016;
originally announced June 2016.
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Electrical control over perpendicular magnetization switching driven by spin-orbit torques
Authors:
X. Zhang,
C. H. Wan,
Z. H. Yuan,
Q. T. Zhang,
H. Wu,
L. Huang,
W. J. Kong,
C. Fang,
U. Khan,
X. F. Han
Abstract:
Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current is introduced to tune the magnitude of effective damping-like and field-like torques and further to electrically control magnetization switching. Symmetrical and…
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Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current is introduced to tune the magnitude of effective damping-like and field-like torques and further to electrically control magnetization switching. Symmetrical and asymmetrical control over the critical switching current by the bias current with opposite polarities is both realized in Pt/Co/MgO and $α$-Ta/CoFeB/MgO systems, respectively. This research not only identifies the influences of field-like and damping-like torques on switching process but also demonstrates an electrical method to control it.
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Submitted 18 May, 2016;
originally announced May 2016.
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Ultrafast Carrier Dynamics in the Large Magnetoresistance Material WTe$_{2}$
Authors:
Y. M. Dai,
J. Bowlan,
H. Li,
H. Miao,
S. F. Wu,
W. D. Kong,
Y. G. Shi,
S. A. Trugman,
J. -X. Zhu,
H. Ding,
A. J. Taylor,
D. A. Yarotski,
R. P. Prasankumar
Abstract:
Ultrafast optical pump-probe spectroscopy is used to track carrier dynamics in the large magnetoresistance material WTe$_{2}$. Our experiments reveal a fast relaxation process occurring on a sub-picosecond time scale that is caused by electron-phonon thermalization, allowing us to extract the electron-phonon coupling constant. An additional slower relaxation process, occurring on a time scale of…
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Ultrafast optical pump-probe spectroscopy is used to track carrier dynamics in the large magnetoresistance material WTe$_{2}$. Our experiments reveal a fast relaxation process occurring on a sub-picosecond time scale that is caused by electron-phonon thermalization, allowing us to extract the electron-phonon coupling constant. An additional slower relaxation process, occurring on a time scale of $\sim$5-15 picoseconds, is attributed to phonon-assisted electron-hole recombination. As the temperature decreases from 300 K, the timescale governing this process increases due to the reduction of the phonon population. However, below $\sim$50 K, an unusual decrease of the recombination time sets in, most likely due to a change in the electronic structure that has been linked to the large magnetoresistance observed in this material.
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Submitted 7 October, 2015; v1 submitted 24 June, 2015;
originally announced June 2015.
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Tuning the metal-insulator transition in NdNiO3 heterostructures via Fermi surface instability and spin-fluctuations
Authors:
R. S. Dhaka,
Tanmoy Das,
N. C. Plumb,
Z. Ristic,
W. Kong,
C. E. Matt,
N. Xu,
K. Dolui,
E. Razzoli,
M. Medarde,
L. Patthey,
M. Shi,
M. Radovic,
Joel Mesot
Abstract:
We employed {\it in-situ} pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO$_3$ (NNO) thin films, grown on NdGaO$_3$(110) and LaAlO$_3$(100) substrates. In the metallic phase, we observe three dimensional hole and electron Fermi surface (FS) pockets formed from strongly renormalized band…
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We employed {\it in-situ} pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO$_3$ (NNO) thin films, grown on NdGaO$_3$(110) and LaAlO$_3$(100) substrates. In the metallic phase, we observe three dimensional hole and electron Fermi surface (FS) pockets formed from strongly renormalized bands with well-defined quasiparticles. Upon cooling across the MIT in NNO/NGO sample, the quasiparticles lose coherence via a spectral weight transfer from near the Fermi level to localized states forming at higher binding energies. In the case of NNO/LAO, the bands are apparently shifted upward with an additional holelike pocket forming at the corner of the Brillouin zone. We find that the renormalization effects are strongly anisotropic and are stronger in NNO/NGO than NNO/LAO. Our study reveals that substrate-induced strain tunes the crystal field splitting, which changes the FS properties, nesting conditions, and spin-fluctuation strength, and thereby controls the MIT via the formation of an electronic order parameter with Q$_{AF}\sim$(1/4, 1/4, 1/4$\pm$$δ$).
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Submitted 18 May, 2015;
originally announced May 2015.
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Raman scattering investigation of large positive magnetoresistance material WTe$_2$
Authors:
W. -D. Kong,
S. -F. Wu,
P. Richard,
C. -S. Lian,
J. -T. Wang,
C. -L. Yang,
Y. -G. Shi,
H. Ding
Abstract:
We have performed polarized Raman scattering measurements on WTe$_2$, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A$_1$ phonon modes and 2 A$_2$ phonon modes out of 33 Raman active modes, with frequencies in good accordance with first-principles calculations. The angular dependence of the intensity of the peaks observed is consistent with the Ra…
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We have performed polarized Raman scattering measurements on WTe$_2$, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A$_1$ phonon modes and 2 A$_2$ phonon modes out of 33 Raman active modes, with frequencies in good accordance with first-principles calculations. The angular dependence of the intensity of the peaks observed is consistent with the Raman tensors of the $C_{2v}$ point group symmetry attributed to WTe$_2$. Although the phonon spectra suggest neither strong electron-phonon nor spin-phonon coupling, the intensity of the A$_1$ phonon mode at 160.6 cm$^{-1}$ shows an unconventional decrease with temperature decreasing, for which the origin remains unclear.
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Submitted 15 February, 2015; v1 submitted 26 January, 2015;
originally announced January 2015.
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Introduction of DC line structures into a superconducting microwave 3D cavity
Authors:
Wei-Cheng Kong,
Guang-Wei Deng,
Shu-Xiao Li,
Hai-Ou Li,
Gang Cao,
Ming Xiao,
Guo-Ping Guo
Abstract:
We report a technique that can noninvasively add multiple DC wires into a 3D superconducting microwave cavity for electronic devices that require DC electrical terminals. We studied the influence of our DC lines on the cavity performance systematically. We found that the quality factor of the cavity is reduced if any of the components of the electrical wires cross the cavity equipotential planes.…
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We report a technique that can noninvasively add multiple DC wires into a 3D superconducting microwave cavity for electronic devices that require DC electrical terminals. We studied the influence of our DC lines on the cavity performance systematically. We found that the quality factor of the cavity is reduced if any of the components of the electrical wires cross the cavity equipotential planes. Using this technique, we were able to incorporate a quantum dot (QD) device into a 3D cavity. We then controlled and measured the QD transport signal using the DC lines. We have also studied the heating effects of the QD by the microwave photons in the cavity.
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Submitted 26 December, 2014;
originally announced December 2014.
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Unconventional Magnetization of Fe3O4 Thin Film Grown on Amorphous SiO2 Substrate
Authors:
Zhi-Guo Liu,
Shang-Fei Wu,
Jia-Xin Yin,
Wen-Hong Wang,
Wan-Dong Kong,
Hao-Jun Yang,
Pierre Richard,
Hong Ding,
Lei Yan
Abstract:
High quality single crystal Fe3O4 thin films with (111) orientation had been prepared on amorphous SiO2 substrate by pulsed laser deposition. The magnetization properties of the films are found to be highly unconventional. The Verwey transition temperature derived from the magnetization jump is around 140K, which is higher than the bulk value and it can be slightly suppressed by out-plane magnetic…
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High quality single crystal Fe3O4 thin films with (111) orientation had been prepared on amorphous SiO2 substrate by pulsed laser deposition. The magnetization properties of the films are found to be highly unconventional. The Verwey transition temperature derived from the magnetization jump is around 140K, which is higher than the bulk value and it can be slightly suppressed by out-plane magnetic field; the out-of-plane magnetization, which is unexpectedly higher than the in-plane value, is also significantly increased as compared with the bulk value. Our findings suggest that the local Coulomb correlation U and the effective ferromagnetic exchange interaction J of Fe 3d electrons are both dramatically strengthened and out-of-plane directionally entangled by the unusual coupling between Fe3O4 thin film and the amorphous SiO2 substrate.
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Submitted 2 November, 2014;
originally announced November 2014.
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Coupling two distant double quantum dots to a microwave resonator
Authors:
Guang-Wei Deng,
Da Wei,
Shu-Xiao Li,
J. R. Johansson,
Wei-Cheng Kong,
Hai-Ou Li,
Gang Cao,
Ming Xiao,
Guang-Can Guo,
Franco Nori,
Hong-Wen Jiang,
Guo-Ping Guo
Abstract:
With recent advances in the circuit quantum electrodynamics (cQED) architecture, hybrid systems that couple nano-devices to microwave resonators have been developing rapidly. Here we report an experimental demonstration of two graphene double quantum dots (DQDs) coupled over a distance of up to 60 μm, through a microwave resonator. We jointly measure the two DQDs' coupling to the resonator, which…
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With recent advances in the circuit quantum electrodynamics (cQED) architecture, hybrid systems that couple nano-devices to microwave resonators have been developing rapidly. Here we report an experimental demonstration of two graphene double quantum dots (DQDs) coupled over a distance of up to 60 μm, through a microwave resonator. We jointly measure the two DQDs' coupling to the resonator, which causes a nonlinear response in the resonator reflection amplitude in the vicinity of the degeneracy points of the two DQDs. This phenomenon is explained by the Tavis-Cummings (T-C) mode. We further characterize this nonlocal coupling by measuring the correlation between the DC currents in the two DQDs. This correlation is observed to be strongly dependent on the average photon number in the resonator. Our results explore T-C physics in electronic transport, and also contribute to the study of nonlocal transport and future implementations of remote electronic entanglement.
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Submitted 17 September, 2014;
originally announced September 2014.
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In-plane optical spectroscopy study on FeSe epitaxial thin film grown on SrTiO$_3$ substrate
Authors:
R. H. Yuan,
W. D. Kong,
L. Yan,
H. Ding,
N. L. Wang
Abstract:
We perform in-plane optical spectroscopy measurement on (00l) FeSe thin-film grown on SrTiO$_3$ substrate by pulsed laser deposition method. The study indicates that the low frequency conductivity consists of two Drude components, a broad one which takes up most of the spectral weight and a very narrow one roughly below 100-150 \cm. The narrow Drude component locates at so low frequencies that no…
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We perform in-plane optical spectroscopy measurement on (00l) FeSe thin-film grown on SrTiO$_3$ substrate by pulsed laser deposition method. The study indicates that the low frequency conductivity consists of two Drude components, a broad one which takes up most of the spectral weight and a very narrow one roughly below 100-150 \cm. The narrow Drude component locates at so low frequencies that no such behavior was observed in iron pnictides. The overall plasma frequency is found to be smaller than the FeAs based compounds, suggesting a stronger correlation effect. Similar to iron pnictides, a temperature-induced spectral weight transfer is observed for FeSe. However, the relevant energy scale is lower. Additionally, different from a recent ARPES measurement which revealed a spin density wave (SDW) order at low temperature for FeSe thin films grown on SrTiO$_3$ substrate, no signature of the band structure reconstruction arising from the formation of the SDW order is seen by optical measurement in the thick FeSe films.
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Submitted 18 March, 2013;
originally announced March 2013.
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Growth of Large Domain Epitaxial Graphene on the C-Face of SiC
Authors:
Rui Zhang,
Yunliang Dong,
Wenjie Kong,
Wenpeng Han,
Pingheng Tan,
Zhimin Liao,
Xiaosong Wu,
Dapeng Yu
Abstract:
Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene. Surface patterns uncover two important aspects of the growth, i.e. carbon diffusion and stoichiometric requirement. Moreover, a new "stepdown" growth mode has bee…
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Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene. Surface patterns uncover two important aspects of the growth, i.e. carbon diffusion and stoichiometric requirement. Moreover, a new "stepdown" growth mode has been discovered. Via this mode, monolayer graphene domains can have an area of hundreds of square micrometers, while, most importantly, step bunching is avoided and the initial uniformly stepped SiC surface is preserved. The stepdown growth provides a possible route towards uniform epitaxial graphene in wafer size without compromising the initial flat surface morphology of SiC.
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Submitted 28 November, 2012;
originally announced November 2012.
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Giant Positive Magnetoresistance in Co@CoO Nanoparticle Arrays
Authors:
Hui Xing,
Wenjie Kong,
Chaehyun Kim,
Sheng Peng,
Shouheng Sun,
Zhu-An Xu,
Hao Zeng
Abstract:
We report the magnetotransport properties of self-assembled Co@CoO nanoparticle arrays at temperatures below 100 K. Resistance shows thermally activated behavior that can be fitted by the general expression of R exp{(T/T0)^v}. Efros-Shklovskii variable range hopping (v=1/2) and simple activation (hard gap, v=1) dominate the high and low temperature region, respectively, with a strongly temperature…
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We report the magnetotransport properties of self-assembled Co@CoO nanoparticle arrays at temperatures below 100 K. Resistance shows thermally activated behavior that can be fitted by the general expression of R exp{(T/T0)^v}. Efros-Shklovskii variable range hopping (v=1/2) and simple activation (hard gap, v=1) dominate the high and low temperature region, respectively, with a strongly temperature-dependent transition regime in between. A giant positive magnetoresistance of >1,400% is observed at 10K, which decreases with increasing temperature. The positive MR and most of its features can be explained by the Zeeman splitting of the localized states that suppresses the spin dependent hopping paths in the presence of on-site Coulomb repulsion.
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Submitted 25 March, 2011;
originally announced March 2011.
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Giant spin Hall conductivity in platinum at room temperature
Authors:
Chee Weng Koong,
Berthold-Georg Englert,
Christian Miniatura,
N. Chandrasekhar
Abstract:
We have demonstrated the electrical generation and detection of spin polarization by the spin Hall effect (SHE) in platinum. The experiment was performed in a non-local geometry without the use of ferromagnetic materials or magnetic field. We designed a circuit that uses the SHE to convert a charge current to a spin current, and the inverse SHE to convert the spin current back into a charge signal…
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We have demonstrated the electrical generation and detection of spin polarization by the spin Hall effect (SHE) in platinum. The experiment was performed in a non-local geometry without the use of ferromagnetic materials or magnetic field. We designed a circuit that uses the SHE to convert a charge current to a spin current, and the inverse SHE to convert the spin current back into a charge signal. The experiments were carried out for temperatures from 10 K up to 290 K. We extracted the spin Hall conductivity and spin diffusion length from the data with the aid of a spin diffusion model, and found the values of 1.1 $\times 10^6$ $Ω^{-1}$m$^{-1}$ and 80~nm, respectively, at 290 K. The spin Hall conductivity is two orders of magnitudes larger than the previous record of $3.3\times10^4$ $Ω^{-1}$m$^{-1}$. This observation may have many potential applications in spintronics devices.
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Submitted 9 June, 2010; v1 submitted 8 April, 2010;
originally announced April 2010.
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Ultrafast and Large Third-order Nonlinear Optical Properties of CdS Nanocrystals in Polymeric Film
Authors:
J. He,
W. Ji,
G. H. Ma,
S. H. Tang,
E. S. W. Kong,
S. Y. Chow,
X. H. Zhang,
Z. L. Hua,
J. L. Shi
Abstract:
We report the ultrafast and large third-order nonlinear optical properties of CdS nanocrystals (NCs) embedded in a polymeric film. The CdS NCs of 2-nm radius are synthesized by an ion exchange method and highly concentrated in the two layers near the surfaces of the polymeric film. The two-photon absorption coefficient and the optical Kerr coefficient are measured with laser pulses of 250-fs dur…
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We report the ultrafast and large third-order nonlinear optical properties of CdS nanocrystals (NCs) embedded in a polymeric film. The CdS NCs of 2-nm radius are synthesized by an ion exchange method and highly concentrated in the two layers near the surfaces of the polymeric film. The two-photon absorption coefficient and the optical Kerr coefficient are measured with laser pulses of 250-fs duration at 800-nm wavelength. The one-photon and two-photon figures of merit are determined to be 3.1 and 1.3, respectively, at irradiance of 2 GW/cm2. The observed nonlinearities have a recovery time of ~ 1 ps. The two-photon-generated free carrier effects have also been observed and discussed. These results demonstrate that CdS NCs embedded in polymeric film are a promising candidate for optical switching applications.
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Submitted 28 July, 2005;
originally announced July 2005.
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Observation of a Logarithmic Temperature Dependence of Thermoelectric Power on Multiwall Carbon Nanotubes
Authors:
N. Kang,
L. Lu,
W. J. Kong,
J. S. Hu,
W. Yi,
Y. P. Wang,
D. L. Zhang,
Z. W. Pan,
S. S. Xie
Abstract:
We have investigated the thermoelectric power (TEP) of millimeter-long aligned multiwall carbon nanotubes down to a temperature of $T$=1.5 K, and observed for the first time an accurate $T {\rm ln} T$ dependence at low temperatures. This behavior is possibly originated from the repulsive interaction between the electrons in a disordered local environment.
We have investigated the thermoelectric power (TEP) of millimeter-long aligned multiwall carbon nanotubes down to a temperature of $T$=1.5 K, and observed for the first time an accurate $T {\rm ln} T$ dependence at low temperatures. This behavior is possibly originated from the repulsive interaction between the electrons in a disordered local environment.
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Submitted 5 February, 2002;
originally announced February 2002.
