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Orbital Signatures of Density Wave Transition in La3Ni2O7-delta and La2PrNi2O7-delta RP-Nickelates Probed via in-situ X-ray Absorption Near-edge Spectroscopy
Authors:
Mingtao Li,
Mingxin Zhang,
Yiming Wang,
Jiayi Guan,
Nana Li,
Cuiying Pei,
N-Diaye Adama,
Qingyu Kong,
Yanpeng Qi,
Wenge Yang
Abstract:
The report of superconductivity (SC) with Tc~80 K in bilayer Ruddlesden-Popper (RP) nickelate La3Ni2O7-delta have sparked considerable investigations on its normal state properties and SC mechanism under pressure and at low temperature. It is believed that the density wave (DW) at ~150 K plays an important role in SC emergence, but its nature remains largely underexplored. Here, we utilized temper…
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The report of superconductivity (SC) with Tc~80 K in bilayer Ruddlesden-Popper (RP) nickelate La3Ni2O7-delta have sparked considerable investigations on its normal state properties and SC mechanism under pressure and at low temperature. It is believed that the density wave (DW) at ~150 K plays an important role in SC emergence, but its nature remains largely underexplored. Here, we utilized temperature-dependent in-situ Ni K-edge X-ray Absorption Near-edge Spectroscopy (XANES) to probe the Ni-3d/4p electronic states of La3Ni2O7-delta and La2PrNi2O7-delta samples down to 4.8 K, enabling us to witness the evolution of both in-plane d_(x^2-y^2)/p_x (p_y) and out-of-plane d_(3z^2-r^2)/p_z orbitals of NiO6 octahedron across the DW transition. Main edge energy associated with Ni 4p orbital shows an anomalous decline near DW transition, signifying the occurrence of lattice distortions as a hallmark of charge density wave. Below DW transition, the enlarged crystal field splitting (CFS) indicates an enhanced NiO6 octahedral distortion. Intriguingly, magnetic Pr substituents could activate the mutual interplay of d_(x^2-y^2) and d_(3z^2-r^2) orbitals. We discussed its relevance to the favored bulk SC in the pressurized polycrystalline La2PrNi2O7-delta than pristine.
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Submitted 15 February, 2025;
originally announced February 2025.
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Low-temperature mean valence of nickel ions in pressurized La$_3$Ni$_2$O$_7$
Authors:
Shu Cai,
Yazhou Zhou,
Hualei Sun,
Kai Zhang,
Jinyu Zhao,
Mengwu Huo,
Lucie Nataf,
Yuxin Wang,
Jie Li,
Jing Guo,
Kun Jiang,
Meng Wang,
Yang Ding,
Wenge Yang,
Yi Lu,
Qingyu Kong,
Qi Wu,
Jiangping Hu,
Tao Xiang,
Ho-kwang Mao,
Liling Sun
Abstract:
The discovery of high critical temperature (Tc) superconductivity in pressurized La$_3$Ni$_2$O$_7$ has ignited renewed excitement in the search of novel high-Tc superconducting compounds with 3d transition metals. Compared to other ambient-pressure superconductors, such as copper-oxide and iron-oxypnictides, unraveling the mechanisms of the pressure-induced superconductivity poses significant and…
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The discovery of high critical temperature (Tc) superconductivity in pressurized La$_3$Ni$_2$O$_7$ has ignited renewed excitement in the search of novel high-Tc superconducting compounds with 3d transition metals. Compared to other ambient-pressure superconductors, such as copper-oxide and iron-oxypnictides, unraveling the mechanisms of the pressure-induced superconductivity poses significant and unique challenges. A critical factor in this phenomenon seems to be related to the electronic configuration of 3d orbitals, which may play a fundamental role in driving high-Tc superconductivity. However, the pressure effects on the mixed-valence states of 3d-orbital cations and their influence on the emergence of high-Tc superconductivity remain poorly understood. Here, we use high-pressure (P) and low-temperature synchrotron X-ray absorption spectroscopy to investigate the influence of pressure on the mean valence change of Ni ions in La$_3$Ni$_2$O$_7$. Our results demonstrate that at a low-temperature of 20 K, the mean valence remains relatively stable across the pressures range from 1 atm to 40 GPa. Based on analyzing the absorption data, we find that, at a critical pressure, the ambient-pressure ordered phases disappear and both the structural and the superconducting phase transition occur. The pressure-induced structural phase transition revealed by our absorption results is consistent with that determined by X-ray diffraction, offering new information for a comprehensive understanding on the pressure-induced superconductivity in La$_3$Ni$_2$O$_7$.
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Submitted 24 December, 2024;
originally announced December 2024.
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Distinguishing Electronic Band Structure of Single-layer and Bilayer Ruddlesden-Popper Nickelates Probed by in-situ High Pressure X-ray Absorption Near-edge Spectroscopy
Authors:
Mingtao Li,
Yiming Wang,
Cuiying Pei,
Mingxin Zhang,
Nana Li,
Jiayi Guan,
Monica Amboage,
N-Diaye Adama,
Qingyu Kong,
Yanpeng Qi,
Wenge Yang
Abstract:
We report a comprehensive study of electronic band structure for single-layer (SL) and bilayer (BL) RP-nickelates probed by in-situ HP X-ray absorption near edge spectroscopy (XANES). At ambient pressure (AP), the energy splitting delta_E of d_3z^2-r^2 and d_x^2-y^2 bands are directly observed in La3Ni2O7 (BL-La327) but not in La2NiO4 (SL-La214) above E_F, underlining the critical role of inner ap…
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We report a comprehensive study of electronic band structure for single-layer (SL) and bilayer (BL) RP-nickelates probed by in-situ HP X-ray absorption near edge spectroscopy (XANES). At ambient pressure (AP), the energy splitting delta_E of d_3z^2-r^2 and d_x^2-y^2 bands are directly observed in La3Ni2O7 (BL-La327) but not in La2NiO4 (SL-La214) above E_F, underlining the critical role of inner apical O atoms. A combination of DFT-based electronic band structure and projected density of states (PDOS) calculations with simulated XANES enables us to explain the observed main XANES features labelled by a, A, B', B and C when considering the orbital hybridizations, crystal field splitting (CFS) and core-hole screening of different 3d configurations for SL-La214 and BL-La327 nickelates. At high pressure (HP), the delta_E values of pre-edge peak form a dome-like evolution above 7.7 GPa with the maximum locating at around 20 GPa for metallic BL-La327. Analysis of its integrated area and FWHM provides strong evidence that the bonding d_3z^2-r^2 band crosses E_F above about 7.7 GPa for the metallic BL-La327. Growth of integrated area of pre-edge peak and C peak further evidences pressure-induced hole doping effect. Meanwhile, the pressure dependent FWHM of pre-edge peak implies a nonmonotonic evolution of orbital-selective electronic correlation above 7.7 GPa with extrema emerging at about 20 GPa. Moreover, we estimate the relative hole doping level using the energy shift of pre-edge peak, yielding 0.074 hole per Ni site or equivalently 1.1*10^21 cm^-3 at 20 GPa for the metallic BL-La327, which is comparable to cuprates. Our results have timely examined the electronic band structures as obtained from theoretical calculations, emphasizing the essential role of both d_3z^2-r^2 and d_x^2-y^2 bands as well as the electronic correlation in superconducting pairing for pressurized La3Ni2O7.
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Submitted 5 October, 2024;
originally announced October 2024.
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Atomic-scale effect of 2D π-conjugated metal-organic frameworks as electrocatalysts for CO2 reduction reaction towards highly selective products
Authors:
Ran Wang,
Chaozheng He,
Weixing Chen,
Qingquan Kong,
Thomas Frauenheimac
Abstract:
Electrocatalytic CO2 reduction technology is key to mitigating greenhouse gas emissions and the energy crisis. However, controlling the selectivity of CO2RR products at low overpotential remains a challenge. In this paper, we predicted five high-performance CO2RR electrocatalysts with different product-specific selectivities at the theoretical level based on the advantages of the compositional str…
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Electrocatalytic CO2 reduction technology is key to mitigating greenhouse gas emissions and the energy crisis. However, controlling the selectivity of CO2RR products at low overpotential remains a challenge. In this paper, we predicted five high-performance CO2RR electrocatalysts with different product-specific selectivities at the theoretical level based on the advantages of the compositional structure and the tunable pore size of 2D π-conjugated MOFs. In addition, through the reaction mechanism and electronic structure analysis, we found that the synergistic interaction between metal atoms and organic linkers of 2D MOFs can effectively regulate the electronic structure of the active center. Their pore size as well as the diversity of carbon materials can regulate the spin magnetic moments of the metal atoms, thus affecting the improvement of their catalytic performance. Meanwhile, the oxygen or carbon affinity of the catalyst surface determines the differences in the formation of key intermediates, which ultimately determines the reaction path and product selectivity. These insights we present will be useful for the development and design of highly active CO2RR electrocatalysts.
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Submitted 3 March, 2024;
originally announced March 2024.
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Unexpected Reversed Piezoelectric Response in Elemental Sb and Bi Monolayers
Authors:
Yunfei Hong,
Junkai Deng,
Qi Kong,
Xiangdong Ding,
Jun Sun,
Jefferson Zhe Liu
Abstract:
Sb and Bi monolayers, as single-elemental ferroelectric materials with similar atomic structure, hold intrinsic piezoelectricity theoretically, which makes them highly promising for applications in functional nano-devices such as sensors and actuators. Here, using first-principles calculations, we systematically explore the piezoelectric response of Sb and Bi monolayers. Our findings reveal that S…
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Sb and Bi monolayers, as single-elemental ferroelectric materials with similar atomic structure, hold intrinsic piezoelectricity theoretically, which makes them highly promising for applications in functional nano-devices such as sensors and actuators. Here, using first-principles calculations, we systematically explore the piezoelectric response of Sb and Bi monolayers. Our findings reveal that Sb exhibits a negative piezoelectric response, whereas Bi displays a positive one. This discrepancy is attributed to the dominant role of different atomic internal distortions (internal-strain terms) in response to applied strain. Further electron-density distribution analysis reveals that the atomic bonding in Sb tends to be covalent, while the atomic bonding in Bi leans more towards ionic. Compared to the Sb monolayer, the Bi monolayer is distinguished by its more pronounced lone-pair orbitals electrons and associated larger Born effective charges. The Coulomb repulsions between lone-pair orbitals electrons and the chemical bonds lead to the Bi monolayer possessing more prominent atomic folds and, consequently, more significant atomic distortion in the z-direction under strain. These differences result in a considerable difference in internal-strain terms, ultimately leading to the reversed piezoelectric response between Sb and Bi monolayers. The present work provides valuable insights into the piezoelectric mechanism of 2D ferroelectric materials and their potential applications in nano-electronic devices.
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Submitted 20 September, 2023;
originally announced September 2023.
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A Novel Non-Volatile Inverter-based CiM: Continuous Sign Weight Transition and Low Power on-Chip Training
Authors:
Dong Zhang,
Yuye Kang,
Gan Liu,
Zuopu Zhou,
Kaizhen Han,
Chen Sun,
Leming Jiao,
Xiaolin Wang,
Yue Chen,
Qiwen Kong,
Zijie Zheng,
Long Liu,
Xiao Gong
Abstract:
In this work, we report a novel design, one-transistor-one-inverter (1T1I), to satisfy high speed and low power on-chip training requirements. By leveraging doped HfO2 with ferroelectricity, a non-volatile inverter is successfully demonstrated, enabling desired continuous weight transition between negative and positive via the programmable threshold voltage (VTH) of ferroelectric field-effect tran…
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In this work, we report a novel design, one-transistor-one-inverter (1T1I), to satisfy high speed and low power on-chip training requirements. By leveraging doped HfO2 with ferroelectricity, a non-volatile inverter is successfully demonstrated, enabling desired continuous weight transition between negative and positive via the programmable threshold voltage (VTH) of ferroelectric field-effect transistors (FeFETs). Compared with commonly used designs with the similar function, 1T1I uniquely achieves pure on-chip-based weight transition at an optimized working current without relying on assistance from off-chip calculation units for signed-weight comparison, facilitating high-speed training at low power consumption. Further improvements in linearity and training speed can be obtained via a two-transistor-one-inverter (2T1I) design. Overall, focusing on energy and time efficiencies, this work provides a valuable design strategy for future FeFET-based computing-in-memory (CiM).
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Submitted 19 September, 2022;
originally announced September 2022.
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Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors
Authors:
Chen Sun,
Chao Li,
Subhranu Samanta,
Kaizhen Han,
Zijie Zheng,
Jishen Zhang,
Qiwen Kong,
Haiwen Xu,
Zuopu Zhou,
Yue Chen,
Cheng Zhuo,
Kai Ni,
Xunzhao Yin,
Xiao Gong
Abstract:
3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these drawbacks by introducing an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which has the advantages of ultra-low OFF current, back-end-of-line compatibility,…
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3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these drawbacks by introducing an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which has the advantages of ultra-low OFF current, back-end-of-line compatibility, higher mobility and better uniformity than poly-Si, and free of grain boundaries due to the amorphous nature. Ultra-scaled floating-gate (FG) transistors with a channel length of 60 nm are reported, achieving the highest ON current of 127 uA/um among all reported a-IGZO-based flash devices for high-density, low-power, and high-performance 3D NAND applications. Furthermore, a non-volatile and area-efficient ternary content-addressable memory (TCAM) with only two a-IGZO FG transistors is experimentally demonstrated. Array-level simulations using experimentally calibrated models show that this design achieves at least 240x array-size scalability and 2.7-fold reduction in search energy than 16T-CMOS, 2T2R, and 2FeFET TCAMs.
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Submitted 15 December, 2022; v1 submitted 15 December, 2021;
originally announced December 2021.
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Solid-state ionic rectification in perovskite nanowire heterostructures
Authors:
Qiao Kong,
Amael Obliger,
Minliang Lai,
Mengyu Gao,
David T. Limmer,
Peidong Yang
Abstract:
Halide perovskites have attracted increasing research attention regarding their outstanding optoelectronic applications. Owing to its low activation energy, ion migration is implicated in the long-term stability and many unusual transport behaviors of halide perovskite devices. However, precise control of the ionic transport in halide perovskite crystals remains challenging. Here we visualized and…
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Halide perovskites have attracted increasing research attention regarding their outstanding optoelectronic applications. Owing to its low activation energy, ion migration is implicated in the long-term stability and many unusual transport behaviors of halide perovskite devices. However, precise control of the ionic transport in halide perovskite crystals remains challenging. Here we visualized and quantified the electric-field-induced halide ion migration in an axial CsPbBr$_3$-CsPbCl$_3$ nanowire heterostructure and demonstrated a solid-state ionic rectification, which is due to the non-uniform distribution of the ionic vacancies in the nanowire that results from a competition between electrical screening and their creation and destruction at the electrode interface. The asymmetric heterostructure characteristics add an additional knob to the ion-movement manipulation in the design of advanced ionic circuits with halide perovskites as building blocks.
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Submitted 15 July, 2020; v1 submitted 14 July, 2020;
originally announced July 2020.
