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Voltage control of the long-range p-d exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure
Authors:
V. L. Korenev,
I. V. Kalitukha,
I. A. Akimov,
V. F. Sapega,
E. A. Zhukov,
E. Kirstein,
O. S. Ken,
D. Kudlacik,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
N. D. Ilyinskaya,
N. M. Lebedeva,
T. A. Komissarova,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive c…
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Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive candidates in that respect as such systems bring together the properties of the isolated constituents: They are expected to show magnetic order as a ferromagnet and to be electrically tunable as a semiconductor. Here we demonstrate the electrical control of the exchange coupling in a hybrid consisting of a ferromagnetic Co layer and a semiconductor CdTe quantum well, separated by a thin non-magnetic (Cd,Mg)Te barrier. The effective magnetic field of the exchange interaction reaches up to 2.5 Tesla and can be turned on and off by application of 1 V bias across the heterostructure. The mechanism of this electric field control is essentially different from the conventional concept, in which wavefunctions are spatially redistributed to vary the exchange interaction, requiring high field strengths. Here we address instead control of the novel exchange mechanism that is mediated by elliptically polarized phonons emitted from the ferromagnet, i.e. the phononic ac Stark effect. An essential parameter of this coupling is the splitting between heavy and light hole states in the quantum well which can be varied by the electric field induced band bending. Thereby the splitting can be tuned with respect to the magnon-phonon resonance energy in the ferromagnet, leading to maximum coupling for flat band conditions. Our results demonstrate the feasibility of electrically controlled exchange coupling in hybrid semiconductor nanostructures at quite moderate electric field strengths.
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Submitted 23 December, 2018;
originally announced December 2018.
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Electrical anisotropy of heteroepitaxial InSb/GaAs layers
Authors:
T. A. Komissarova,
A. N. Semenov,
D. A. Kirilenko,
B. Ya. Meltser,
V. A. Solovyev,
A. A. Sitnikova,
P. Paturi,
S. V. Ivanov
Abstract:
We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron transport parameters measured at a low magnetic field has been found, whereas the electrical transport through the InSb bulk layer studied by Shubnikov-de Haas oscillations is shown to be independent of the crystallograph…
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We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron transport parameters measured at a low magnetic field has been found, whereas the electrical transport through the InSb bulk layer studied by Shubnikov-de Haas oscillations is shown to be independent of the crystallographic directions. The low-field electrical anisotropy of the InSb films appears to be governed by two competitive anisotropic effects: influence of spontaneously formed In nanoclusters inhomogeneously distributed within the InSb layers and conductivity through the near-interface layer with high anisotropic density of extended defects.
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Submitted 9 July, 2013;
originally announced July 2013.
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Identification of main contributions to conductivity of epitaxial InN
Authors:
T. A. Komissarova,
O. Drachenko,
V. N. Jmerik,
X. Wang,
A. Yoshikawa,
S. V. Ivanov
Abstract:
Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, ne…
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Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, near-interface and bulk layers play the dominant role in the electrical conductivity of InN, while influence of the surface layer is pronounced only in the compensated low-mobility InN:Mg films.
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Submitted 26 May, 2011;
originally announced May 2011.
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Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs
Authors:
Ya. V. Terent'ev,
C. Zoth,
V. V. Bel'kov,
P. Olbrich,
C. Drexler,
V. Lechner,
P. Lutz,
A. N. Semenov,
V. A. Solov'ev,
I. V. Sedova,
G. V. Klimko,
T. A. Komissarova,
S. V. Ivanov,
S. D. Ganichev
Abstract:
A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by…
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A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.
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Submitted 5 April, 2011;
originally announced April 2011.
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Comment on "Hole transport and photoluminescence in Mg-doped InN" [Miller et al., J. Appl. Phys., 107, 113712 (2010)]
Authors:
T. A. Komissarova,
S. V. Ivanov
Abstract:
Analysis and discussion of the experimental results and conclusions reported in "Hole transport and photoluminescence in Mg-doped InN" [Miller et al., J. Appl. Phys., 107, 113712 (2010)] will be provided.
Analysis and discussion of the experimental results and conclusions reported in "Hole transport and photoluminescence in Mg-doped InN" [Miller et al., J. Appl. Phys., 107, 113712 (2010)] will be provided.
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Submitted 7 January, 2011;
originally announced January 2011.
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InN/In nanocomposites: Plasmonic effects and a hidden optical gap
Authors:
T. V. Shubina,
V. A. Kosobukin,
T. A. Komissarova,
V. N. Jmerik,
P. S. Kopev,
S. V. Ivanov,
A. Vasson,
J. Leymarie,
N. A. Gippius,
T. Araki,
T. Akagi,
Y. Nanishi
Abstract:
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, be…
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InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions.
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Submitted 27 June, 2008;
originally announced June 2008.
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InN/In nanocomposites: Evidences of plasmonic effects and hidden gap
Authors:
T. V. Shubina,
V. A. Kosobukin,
T. A. Komissarova,
V. N. Jmerik,
P. S. Kopev,
S. V. Ivanov,
A. Vasson,
J. Leymarie,
N. A. Gippius,
T. Araki,
T. Akagi,
Y. Nanishi
Abstract:
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, be…
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InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions.
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Submitted 3 July, 2008; v1 submitted 27 June, 2008;
originally announced June 2008.
