Showing 1–9 of 9 results for author: Koleini, M

Multi-scale approach to first-principles electron transport beyond 100 nm

Authors: Gaetano Calogero, Nick R. Papior, Mohammad Koleini, Matthew Helmi Leth Larsen, Mads Brandbyge

Abstract: Multi-scale computational approaches are important for studies of novel, low-dimensional electronic devices since they are able to capture the different length-scales involved in the device operation, and at the same time describe critical parts such as surfaces, defects, interfaces, gates, and applied bias, on a atomistic, quantum-chemical level. Here we present a multi-scale method which enables… ▽ More Multi-scale computational approaches are important for studies of novel, low-dimensional electronic devices since they are able to capture the different length-scales involved in the device operation, and at the same time describe critical parts such as surfaces, defects, interfaces, gates, and applied bias, on a atomistic, quantum-chemical level. Here we present a multi-scale method which enables calculations of electronic currents in two-dimensional devices larger than 100 nm$^2$, where multiple perturbed regions described by density functional theory (DFT) are embedded into an extended unperturbed region described by a DFT-parametrized tight-binding model. We explain the details of the method, provide examples, and point out the main challenges regarding its practical implementation. Finally we apply it to study current propagation in pristine, defected and nanoporous graphene devices, injected by chemically accurate contacts simulating scanning tunneling microscopy probes. △ Less

Submitted 3 April, 2019; v1 submitted 19 December, 2018; originally announced December 2018.

Journal ref: Nanoscale, 2019,11, 6153-6164

Atomic White-Out: Enabling Atomic Circuitry Through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface

Authors: Taleana Huff, Hatem Labidi, Mohammad Rashidi, Mohammad Koleini, Roshan Achal, Mark Salomons, Robert A. Wolkow

Abstract: We report the mechanically induced formation of a silicon-hydrogen covalent bond and its application in engineering nanoelectronic devices. We show that using the tip of a non-contact atomic force microscope (NC-AFM), a single hydrogen atom could be vertically manipulated. When applying a localized electronic excitation, a single hydrogen atom is desorbed from the hydrogen passivated surface and c… ▽ More We report the mechanically induced formation of a silicon-hydrogen covalent bond and its application in engineering nanoelectronic devices. We show that using the tip of a non-contact atomic force microscope (NC-AFM), a single hydrogen atom could be vertically manipulated. When applying a localized electronic excitation, a single hydrogen atom is desorbed from the hydrogen passivated surface and can be transferred to the tip apex as evidenced from a unique signature in frequency shift curves. In the absence of tunnel electrons and electric field in the scanning probe microscope junction at 0 V, the hydrogen atom at the tip apex is brought very close to a silicon dangling bond, inducing the mechanical formation of a silicon-hydrogen covalent bond and the passivation of the dangling bond. The functionalized tip was used to characterize silicon dangling bonds on the hydrogen-silicon surface, was shown to enhance the scanning tunneling microscope (STM) contrast, and allowed NC-AFM imaging with atomic and chemical bond contrasts. Through examples, we show the importance of this atomic scale mechanical manipulation technique in the engineering of the emerging technology of on-surface dangling bond based nanoelectronic devices. △ Less

Submitted 19 June, 2017; v1 submitted 16 June, 2017; originally announced June 2017.

Comments: 9 pages (including references and Supplementary Section), 8 figures (5 in the main text, 3 in Supplementary)

Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale

Authors: Mohammad Rashidi, Marco Taucer, Isil Ozfidan, Erika Lloyd, Mohammad Koleini, Hatem Labidi, Jason L. Pitters, Joseph Maciejko, Robert A. Wolkow

Abstract: Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but viability of device fabrication requires fuller understanding of electron dynamics than has been possible to date. Using an all-electronic time-resolved scanning tunneling microscopy technique and a Green's function trans… ▽ More Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but viability of device fabrication requires fuller understanding of electron dynamics than has been possible to date. Using an all-electronic time-resolved scanning tunneling microscopy technique and a Green's function transport model, we study an isolated dangling bond on a hydrogen terminated silicon surface. A robust negative differential resistance feature is identified as a many body phenomenon related to occupation dependent electron capture by a single atomic level. We measure all the time constants involved in this process and present atomically resolved, nanosecond timescale images to simultaneously capture the spatial and temporal variation of the observed feature. △ Less

Submitted 14 December, 2016; v1 submitted 22 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. Lett. 117, 276805 (2016)

Multiple Silicon Atom Artificial Molecules

Authors: John A. Wood, Mohammad Rashidi, Mohammad Koleini, Jason L. Pitters, Robert A. Wolkow

Abstract: We present linear ensembles of dangling bond chains on a hydrogen terminated Si(100) surface, patterned in the closest spaced arrangement allowed by the surface lattice. Local density of states maps over a range of voltages extending spatially over the close-coupled entities reveal a rich energetic and spatial variation of electronic states. These artificial molecules exhibit collective electronic… ▽ More We present linear ensembles of dangling bond chains on a hydrogen terminated Si(100) surface, patterned in the closest spaced arrangement allowed by the surface lattice. Local density of states maps over a range of voltages extending spatially over the close-coupled entities reveal a rich energetic and spatial variation of electronic states. These artificial molecules exhibit collective electronic states resulting from covalent interaction of the constituent atoms. A pronounced electrostatic perturbation of dangling bond chain structure is induced by close placement of a negatively dangling bond. The electronic changes so induced are entirely removed, paradoxically, by addition of a second dangling bond. △ Less

Submitted 20 July, 2016; originally announced July 2016.

Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

Authors: Hatem Labidi, Marco Taucer, Mohammad Rashidi, Mohammad Koleini, Lucian Livadaru, Jason Pitters, Martin Cloutier, Mark Salomons, Robert A. Wolkow

Abstract: We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating samples prepared with different annealing temperatures, we establish the critical role of subsurface arsenic dopants on the DB electronic properties. We show that when the near surface concentration of dopants is deplete… ▽ More We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating samples prepared with different annealing temperatures, we establish the critical role of subsurface arsenic dopants on the DB electronic properties. We show that when the near surface concentration of dopants is depleted as a result of $1250°C$ flash anneals, a single DB exhibits a sharp conduction step in its I(V) spectroscopy that is not due to a density of states effect but rather corresponds to a DB charge state transition. The voltage position of this transition is perfectly correlated with bias dependent changes in STM images of the DB at different charge states. Density functional theory (DFT) calculations further highlight the role of subsurface dopants on DB properties by showing the influence of the DB-dopant distance on the DB state. We discuss possible theoretical models of electronic transport through the DB that could account for our experimental observations. △ Less

Submitted 20 July, 2015; v1 submitted 2 March, 2015; originally announced March 2015.

Comments: 21 pages, 6 figures

Journal ref: New J. Phys. 17, 073023 (2015)

Extension of the B3LYP - Dispersion-Correcting Potential Approach to the Accurate Treatment of both Inter- and Intramolecular Interactions

Authors: Gino A. DiLabio, Mohammad Koleini, Edmanuel Torres

Abstract: We recently showed that dispersion-correcting potentials (DCPs), atom-centered Gaussian-type functions developed for use with B3LYP (J. Phys. Chem. Lett. 2012, 3, 1738-1744) greatly improved the ability of the underlying functional to predict non-covalent interactions. However, the application of B3LYP-DCP for the β-scission of the cumyloxyl radical led a calculated barrier height that was over-es… ▽ More We recently showed that dispersion-correcting potentials (DCPs), atom-centered Gaussian-type functions developed for use with B3LYP (J. Phys. Chem. Lett. 2012, 3, 1738-1744) greatly improved the ability of the underlying functional to predict non-covalent interactions. However, the application of B3LYP-DCP for the β-scission of the cumyloxyl radical led a calculated barrier height that was over-estimated by ca. 8 kcal/mol. We show in the present work that the source of this error arises from the previously developed carbon atom DCPs, which erroneously alters the electron density in the C-C covalent-bonding region. In this work, we present a new C-DCP with a form that was expected to influence the electron density farther from the nucleus. Tests of the new C-DCP, with previously published H-, N- and O-DCPs, with B3LYP-DCP/6-31+G(2d,2p) on the S66, S22B, HSG-A, and HC12 databases of non-covalently interacting dimers showed that it is one of the most accurate methods available for treating intermolecular interactions, giving mean absolute errors (MAEs) of 0.19, 0.27, 0.16, and 0.18 kcal/mol, respectively. Additional testing on the S12L database of complexation systems gave an MAE of 2.6 kcal/mol, showing that the B3LYP-DCP/6-31+G(2d,2p) approach is one of the best-performing and feasible methods for treating large systems dominated by non-covalent interactions. Finally, we showed that C-C making/breaking chemistry is well-predicted using the newly developed DCPs. In addition to predicting a barrier height for the β-scission of the cumyloxyl radical that is within 1.7 kcal/mol of the high-level value, application of B3LYP-DCP/6-31+G(2d,2p) to 10 databases that include reaction barrier heights and energies, isomerization energies and relative conformation energies gives performance that is amongst the best of all available dispersion-corrected density-functional theory approaches. △ Less

Submitted 11 July, 2013; v1 submitted 5 July, 2013; originally announced July 2013.

Journal ref: Theor Chem Acc (2013) 132:1389

Controllable magnetic doping of the surface state of a topological insulator

Authors: T. Schlenk, M. Bianchi, M. Koleini, A. Eich, O. Pietzsch, T. O. Wehling, T. Frauenheim, A. Balatsky, J. -L. Mi, B. B. Iversen, J. Wiebe, A. A. Khajetoorians, Ph. Hofmann, R. Wiesendanger

Abstract: A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can be incorporated into subsurface layers by thermally-activated diffusion. Angle-resolved photoemission spectroscopy in combination with ab-initio calc… ▽ More A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can be incorporated into subsurface layers by thermally-activated diffusion. Angle-resolved photoemission spectroscopy in combination with ab-initio calculations suggest that the doping behavior changes from electron donation for the Fe adatom to neutral or electron acceptance for Fe incorporated into substitutional Bi sites. According to first principles calculations within density functional theory, these Fe substitutional impurities retain a large magnetic moment thus presenting an alternative scheme for magnetically doping the topological surface state. For both types of Fe doping, we see no indication of a gap at the Dirac point. △ Less

Submitted 9 November, 2012; originally announced November 2012.

Comments: 5 pages, 4 figures

Strong Spin-Filtering and Spin-Valve Effects in a Molecular V-C60-V Contact

Authors: Mohammad Koleini, Mads Brandbyge

Abstract: Motivated by the recent achievements in manipulation of C60 molecules in STM experiments, we study theoretically the structure and electronic properties of a C60 molecule in an STM-tunneljunction with a magnetic tip and magnetic adatom on a Cu(111) surface from first-principle calculations. For the case of V tip/adatom, we demonstrate how spin-coupling between the magnetic V atoms mediated by the… ▽ More Motivated by the recent achievements in manipulation of C60 molecules in STM experiments, we study theoretically the structure and electronic properties of a C60 molecule in an STM-tunneljunction with a magnetic tip and magnetic adatom on a Cu(111) surface from first-principle calculations. For the case of V tip/adatom, we demonstrate how spin-coupling between the magnetic V atoms mediated by the C60 can be observed in the electronic transport, which display a strong spin-filtering effect, allowing mainly majority-spin electrons to pass(>95%). Moreover, we find a significant change in the conductance between parallel and anti-parallel spin polarizations in the junction (86%) which suggests that STM experiments should be able to characterize the magnetism and spin-coupling for these systems. △ Less

Submitted 17 May, 2012; originally announced May 2012.

Journal ref: Beilstein J. Nanotechnol. 2012, 3, 589-596

Gas Doping on the Topological Insulator Bi2Se3 Surface

Authors: Mohammad Koleini, Thomas Frauenheim, Binghai Yan

Abstract: Gas molecule doping on the topological insulator Bi2 Se3 surface with existing Se vacancies is investigated using first-principles calculations. Consistent with experiments, NO2 and O2 are found to occupy the Se vacancy sites, remove vacancy-doped electrons and restore the band structure of a perfect surface. In contrast, NO and H2 do not favour passivation of such vacancies. Interestingly we have… ▽ More Gas molecule doping on the topological insulator Bi2 Se3 surface with existing Se vacancies is investigated using first-principles calculations. Consistent with experiments, NO2 and O2 are found to occupy the Se vacancy sites, remove vacancy-doped electrons and restore the band structure of a perfect surface. In contrast, NO and H2 do not favour passivation of such vacancies. Interestingly we have revealed a NO2 dissociation process that can well explain the speculative introduced "photon-doping" effect reported by recent experiments. Experimental strategies to validate this mechanism are presented. The choice and the effect of different passivators are discussed. This step paves the way for the usage of such materials in device applications utilizing robust topological surface states. △ Less

Submitted 19 September, 2011; originally announced September 2011.

Journal ref: Phys. Rev. Lett. 110, 016403 (2013)