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High Chern numbers in a perovskite-derived dice lattice (La$X$O$_3$)$_3$/(LaAlO$_3$)$_3$(111) with $X=$ Ti, Mn and Co
Authors:
Okan Köksal,
L. L. Li,
Rossitza Pentcheva
Abstract:
The dice lattice, containing a stack of three triangular lattices, has been proposed to exhibit nontrivial flat bands with nonzero Chern numbers, but unlike the honeycomb lattice it is much less studied. By employing density-functional theory (DFT) calculations with an on-site Coulomb repulsion term, we explore systematically the electronic and topological properties of (La$X$O$_3$)$_3$/(LaAlO…
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The dice lattice, containing a stack of three triangular lattices, has been proposed to exhibit nontrivial flat bands with nonzero Chern numbers, but unlike the honeycomb lattice it is much less studied. By employing density-functional theory (DFT) calculations with an on-site Coulomb repulsion term, we explore systematically the electronic and topological properties of (La$X$O$_3$)$_3$/(LaAlO$_3$)$_3$(111) superlattices with $X=$ Ti, Mn and Co, where a LaAlO$_3$ trilayer spacer confines the La$X$O$_3$ (L$X$O) dice lattice. In the absence of spin-orbit coupling (SOC) with symmetry constrained to P3, the ferromagnetic (FM) phase of the L$X$O(111) trilayers exhibits a distinct spin-polarized half-metallic state with multiple Dirac crossings and coupled electron-hole pockets around the Fermi energy. Symmetry lowering induces a significant rearrangement of bands and triggers a metal-to-insulator transition. Inclusion of SOC leads to a substantial anomalous Hall conductivity (AHC) around the Fermi energy reaching values up to $\sim-3e^2/h$ for $X=$ Mn and Co in P3 symmetry and both in- and out-of-plane magnetization directions in the first case and along [001] in the latter. The dice lattice emerges as a promising playground to realise nontrivial topological phases with high Chern numbers.
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Submitted 4 May, 2023;
originally announced May 2023.
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Ultrafast Dynamics of Gallium Vacancy Charge States in $β$-Ga$_2$O$_3$
Authors:
Arjan Singh,
Okan Koksal,
Nicholas Tanen,
Jonathan McCandless,
Debdeep Jena,
Huili,
Xing,
Hartwin Peelaers,
Farhan Rana
Abstract:
Point defects in crystalline materials often occur in multiple charge states. Although many experimental methods to study and explore point defects are available, techniques to explore the non-equilibrium dynamics of the charge states of these defects at ultrafast (sub-nanosecond) time scales have not been discussed before. We present results from ultrafast optical-pump supercontinuum-probe spectr…
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Point defects in crystalline materials often occur in multiple charge states. Although many experimental methods to study and explore point defects are available, techniques to explore the non-equilibrium dynamics of the charge states of these defects at ultrafast (sub-nanosecond) time scales have not been discussed before. We present results from ultrafast optical-pump supercontinuum-probe spectroscopy measurements on $β$-Ga$_2$O$_3$. The study of point defects in $β$-Ga$_2$O$_3$ is essential for its establishment as a material platform for high-power electronics and deep-UV optoelectronics. Use of a supercontinuum probe allows us to obtain the time-resolved absorption spectra of material defects under non-equilibrium conditions with picosecond time resolution. The probe absorption spectra shows defect absorption peaks at two energies, $\sim$2.2 eV and $\sim$1.63 eV, within the 1.3-2.5 eV probe energy bandwidth. The strength of the absorption associated with each peak is time-dependent and the spectral weight shifts from the lower energy peak to the higher energy peak with pump-probe delay. Further, maximum defect absorption is seen for probe polarized along the crystal c-axis. The time-dependent probe absorption spectra and the observed dynamics for all probe wavelengths at all pump-probe delays can be fit with a set of rate equations for a single multi-level defect. Based on first-principles calculations within hybrid density functional theory we attribute the observed absorption features to optical transitions from the valence band to different charge states of Gallium vacancies. Our results demonstrate that broadband ultrafast supercontinuum spectroscopy can be a useful tool to explore charge states of defects and defect dynamics in semiconductors.
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Submitted 8 February, 2021;
originally announced February 2021.
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The Structure and Dispersion of Exciton-Trion-Polaritons in Two-Dimensional Materials: Experiments and Theory
Authors:
Okan Koksal,
Minwoo Jung,
Christina Manolatou,
A. Nick Vamivakas,
Gennady Shvets,
Farhan Rana
Abstract:
The nature of trions and their interaction with light has remained a puzzle. The composition and dispersion of polaritons involving trions provide insights into this puzzle. Trions and excitons in doped two-dimensional (2D) materials are not independent excitations but are strongly coupled as a result of Coulomb interactions. When excitons in doped 2D materials are also strongly coupled with light…
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The nature of trions and their interaction with light has remained a puzzle. The composition and dispersion of polaritons involving trions provide insights into this puzzle. Trions and excitons in doped two-dimensional (2D) materials are not independent excitations but are strongly coupled as a result of Coulomb interactions. When excitons in doped 2D materials are also strongly coupled with light inside an optical waveguide, the resulting polariton states are coherent superpositions of exciton, trion, and photon states. We realize these exciton-trion-polaritons by coupling an electron-doped monolayer of two-dimensional material MoSe2 to the optical mode in a photonic crystal waveguide. Our theoretical model, based on a many-body description of these polaritons, reproduces the measured polariton energy band dispersion and Rabi splittings with excellent accuracy. Our work sheds light on the structure of trion states in 2D matrials and also on the indirect mechanism by which they interact with light.
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Submitted 26 June, 2021; v1 submitted 6 January, 2021;
originally announced January 2021.
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Exciton-Trion-Polaritons in Two-Dimensional Materials
Authors:
Farhan Rana,
Okan Koksal,
Minwoo Jung,
Gennady Shvets,
A. Nick Vamivakas,
Christina Manolatou
Abstract:
We present a many-body theory for exciton-trion-polaritons in doped two-dimensional materials. Exciton-trion-polaritons are robust coherent hybrid excitations involving excitons, trions, and photons. Signatures of these polaritons have been recently seen in experiments. In these polaritons, the 2-body exciton states are coupled to the material ground state via exciton-photon interaction and the 4-…
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We present a many-body theory for exciton-trion-polaritons in doped two-dimensional materials. Exciton-trion-polaritons are robust coherent hybrid excitations involving excitons, trions, and photons. Signatures of these polaritons have been recently seen in experiments. In these polaritons, the 2-body exciton states are coupled to the material ground state via exciton-photon interaction and the 4-body trion states are coupled to the exciton states via Coulomb interaction. The trion states are not directly optically coupled to the material ground state. The energy-momentum dispersion of these polaritons exhibit three bands. We calculate the energy band dispersions and the compositions of polaritons at different doping densities using Green's functions. The energy splittings between the polariton bands, as well as the spectral weights of the polariton bands, depend on the strength of the Coulomb coupling between the excitons and the trions and which in turn depends on the doping density. The excitons are Coulomb coupled to both bound and unbound trion states. The latter are exciton-electron scattering states and their inclusion is necessary to capture the spectral weight transfer among the polariton bands as a function of the doping density.
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Submitted 3 December, 2020; v1 submitted 24 September, 2020;
originally announced September 2020.
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Many-body theory of radiative lifetimes of exciton-trion superposition states in doped two-dimensional materials
Authors:
Farhan Rana,
Okan Koksal,
Minwoo Jung,
Gennady Shvets,
Christina Manolatou
Abstract:
Optical absorption and emission spectra of doped two-dimensional (2D) materials exhibit sharp peaks that are often identified with pure excitons and pure trions (or charged excitons), but both peaks have been recently attributed to superpositions of 2-body exciton and 4-body trion states and correspond to the approximate energy eigenstates in doped 2D materials. In this paper, we present the radia…
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Optical absorption and emission spectra of doped two-dimensional (2D) materials exhibit sharp peaks that are often identified with pure excitons and pure trions (or charged excitons), but both peaks have been recently attributed to superpositions of 2-body exciton and 4-body trion states and correspond to the approximate energy eigenstates in doped 2D materials. In this paper, we present the radiative lifetimes of these exciton-trion superposition energy eigenstates using a many-body formalism that is appropriate given the many-body nature of the strongly coupled exciton and trion states in doped 2D materials. Whereas the exciton component of these superposition eigenstates are optically coupled to the material ground state, and can emit a photon and decay into the material ground state provided the momentum of the eigenstate is within the light cone, the trion component is optically coupled only to the excited states of the material and can emit a photon even when the momentum of the eigenstate is outside the light cone. In an electron-doped 2D material, when a 4-body trion state with momentum outside the light cone recombines radiatively, and a photon is emitted with a momentum inside the light cone, the excess momentum is taken by an electron-hole pair left behind in the conduction band. The radiative lifetimes of the exciton-trion superposition states, with momenta inside the light cone, are found to be in the few hundred femtoseconds to a few picoseconds range and are strong functions of the doping density. The radiative lifetimes of exciton-trion superposition states, with momenta outside the light cone, are in the few hundred picoseconds to a few nanoseconds range and are again strongly dependent on the doping density.
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Submitted 20 January, 2021; v1 submitted 9 September, 2020;
originally announced September 2020.
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Intra- and Inter-Conduction Band Optical Absorption Processes in $β$-Ga$_2$O$_3$
Authors:
Arjan Singh,
Okan Koksal,
Nicholas Tanen,
Jonathan McCandless,
Debdeep Jena,
Huili,
Xing,
Hartwin Peelaers,
Farhan Rana
Abstract:
$β$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in n-doped $β$-Ga$_2$O$_3…
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$β$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in n-doped $β$-Ga$_2$O$_3$ absorb light from the IR to the UV wavelength range via intra- and inter-conduction band optical transitions. Intra-conduction band absorption occurs via an indirect optical phonon mediated process with a $1/ω^{3}$ dependence in the visible to near-IR wavelength range. This frequency dependence markedly differs from the $1/ω^{2}$ dependence predicted by the Drude model of free-carrier absorption. The inter-conduction band absorption between the lowest conduction band and a higher conduction band occurs via a direct optical process at $λ\sim 349$ nm (3.55 eV). Steady state and ultrafast optical spectroscopy measurements unambiguously identify both these absorption processes and enable quantitative measurements of the inter-conduction band energy, and the frequency dependence of absorption. Whereas the intra-conduction band absorption does not depend on light polarization, inter-conduction band absorption is found to be strongly polarization dependent. The experimental observations, in excellent agreement with recent theoretical predictions for $β$-Ga$_2$O$_3$, provide important limits of sub-bandgap transparency for optoelectronics in the deep-UV to visible wavelength range, and are also of importance for high electric field transport effects in this emerging semiconductor.
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Submitted 29 July, 2020; v1 submitted 26 June, 2020;
originally announced June 2020.
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Chern insulating phases and thermoelectric properties of EuO/MgO(001) superlattices
Authors:
Okan Köksal,
Rossitza Pentcheva
Abstract:
The topological and thermoelectric properties of (EuO)$_{n}$/(MgO)$_{m}$(001) superlattices (SLs) are explored using density functional theory calculations including a Hubbard $U$ term together with Boltzmann transport theory. In (EuO)$_{1}$/(MgO)$_{3}$(001) SL at the lattice constant of MgO a sizable band gap of 0.51 eV is opened by spin-orbit coupling (SOC) due to a band inversion between occupi…
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The topological and thermoelectric properties of (EuO)$_{n}$/(MgO)$_{m}$(001) superlattices (SLs) are explored using density functional theory calculations including a Hubbard $U$ term together with Boltzmann transport theory. In (EuO)$_{1}$/(MgO)$_{3}$(001) SL at the lattice constant of MgO a sizable band gap of 0.51 eV is opened by spin-orbit coupling (SOC) due to a band inversion between occupied localized Eu $4f$ and $5d$ conduction electrons. This inversion between bands of opposite parity is accompanied by a spin reorientation in the spin-texture along the contour of band crossing surrounding the $Γ$ point and leads to a Chern insulator with $C$=-1, also confirmed by the single edge state. Moreover, this Chern insulating phase shows promising thermoelectric properties, e.g. a Seebeck coefficient between 400 and 800 $μ$VK$^{-1}$. A similar SOC-induced band inversion takes place also in the ferromagnetic semimetallic (EuO)$_{2}$/(MgO)$_{2}$(001) SL. Despite the vanishing band gap, it leads to a substantial anomalous Hall conductivity with values up to -1.04 $e^{2}/h$ and somewhat lower thermoelectric properties. Both systems emphasize the relation between non-trivial topological bands and thermoelectricity also in systems with broken inversion symmetry.
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Submitted 4 November, 2020; v1 submitted 20 May, 2020;
originally announced May 2020.
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A Many-Body Theory of the Optical Conductivity of Excitons and Trions in Two-Dimensional Materials
Authors:
Farhan Rana,
Okan Koksal,
Christina Manolatou
Abstract:
The optical spectra of two dimensional (2D) materials exhibit sharp absorption peaks that are commonly identified with exciton and trions (or charged excitons). In this paper, we show that excitons and trions in doped 2D materials can be described by two coupled Schrodinger-like equations - one two-body equation for excitons and another four-body equation for trions. In electron doped 2D materials…
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The optical spectra of two dimensional (2D) materials exhibit sharp absorption peaks that are commonly identified with exciton and trions (or charged excitons). In this paper, we show that excitons and trions in doped 2D materials can be described by two coupled Schrodinger-like equations - one two-body equation for excitons and another four-body equation for trions. In electron doped 2D materials, a bound trion state is identified with a four-body bound state of an exciton and an excited conduction band electron-hole pair. In doped 2D materials, the exciton and the trions states are the not the eigenstates of the full Hamiltonian and their respective Schrodinger equations are coupled due to Coulomb interactions. The strength of this coupling increases with the doping density. Solutions of these two coupled equations can quantitatively explain all the prominent features experimentally observed in the optical absorption spectra of 2D materials including the observation of two prominent absorption peaks and the variation of their energy splittings and spectral shapes and strengths with the electron density. The optical conductivity obtained in our work satisfies the optical conductivity sum rule exactly. A superposition of exciton and trion states can be used to construct a solution of the two coupled Schrodinger equations and this solution resembles the variational exciton-polaron state, thereby establishing the relationship between our approach and Fermi polaron physics.
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Submitted 14 July, 2020; v1 submitted 14 May, 2020;
originally announced May 2020.
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Chern and $Z_{2}$ topological insulating phases in perovskite-derived $4d$ and $5d$ oxide buckled honeycomb lattices
Authors:
Okan Köksal,
Rossitza Pentcheva
Abstract:
Based on density functional theory calculations including a Coulomb repulsion parameter $U$, we explore the topological properties of (La$X$O$_3$)$_2$/(LaAlO$_3$)$_4$(111) with $X=$ $4d$ and $5d$ cations. The metastable ferromagnetic phases of LaTcO$_3$ and LaPtO$_3$ preserve P321 symmetry and emerge as Chern insulators (CI) with $C$=2 and 1 and band gaps of 41 and 38 meV at the lateral lattice co…
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Based on density functional theory calculations including a Coulomb repulsion parameter $U$, we explore the topological properties of (La$X$O$_3$)$_2$/(LaAlO$_3$)$_4$(111) with $X=$ $4d$ and $5d$ cations. The metastable ferromagnetic phases of LaTcO$_3$ and LaPtO$_3$ preserve P321 symmetry and emerge as Chern insulators (CI) with $C$=2 and 1 and band gaps of 41 and 38 meV at the lateral lattice constant of LaAlO$_3$, respectively. Berry curvatures, spin textures as well as edge states provide additional insight into the nature of the CI states. While for $X$=Tc the CI phase is further stabilized under tensile strain, for $X$=Pd and Pt a site disproportionation takes place when increasing the lateral lattice constant from $a_{\rm LAO}$ to $a_{\rm LNO}$. The CI phase of $X$=Pt shows a strong dependence on the Hubbard $U$ parameter with sign reversal for higher values associated with the change of band gap opening mechanism. Parallels to the previously studied ($X_2$O$_3$)$_1$/(Al$_2$O$_3$)$_5$(0001) honeycomb corundum layers are discussed. Additionally, non-magnetic systems with $X$=Mo and W are identified as potential candidates for $Z_2$ topological insulators at $a_{\rm LAO}$ with band gaps of 26 and 60 meV, respectively. The computed edge states and $Z_{2}$ invariants underpin the non-trivial topological properties.
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Submitted 7 August, 2019;
originally announced August 2019.
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Electronic structure of a graphene-like artificial crystal of $NdNiO_3$
Authors:
Arian Arab,
Xiaoran Liu,
O. Köksal,
W. Yang,
R. U. Chandrasena,
S. Middey,
M. Kareev,
S. Kumar,
M. -A. Husanu,
Z. Yang,
L. Gu,
V. N. Strocov,
T. -L. Lee,
J. Minár,
R. Pentcheva,
J. Chakhalian,
A. X. Gray
Abstract:
Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an imme…
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Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Angstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of $NdNiO_3$ confined between two 4-unit cell-thick layers of insulating $LaAlO_3$. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.
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Submitted 27 May, 2019;
originally announced May 2019.
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Measurement of Ultrafast Dynamics of Photoexcited Carriers in $β$-Ga$_2$O$_3$ by Two-Color Optical Pump-Probe Spectroscopy
Authors:
Okan Koksal,
Nicholas Tanen,
Debdeep Jena,
Huili Xing,
Farhan Rana
Abstract:
We report results from ultrafast two-color optical pump-probe spectroscopy on bulk $β$-Ga$_2$O$_3$. A two-photon absorption scheme is used to photoexcite carriers with the pump pulse and free-carrier absorption of the probe pulse is used to record the subsequent dynamics of the photoexcited carriers. Our results are consistent with carrier recombination via defect-assisted processes. We also obser…
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We report results from ultrafast two-color optical pump-probe spectroscopy on bulk $β$-Ga$_2$O$_3$. A two-photon absorption scheme is used to photoexcite carriers with the pump pulse and free-carrier absorption of the probe pulse is used to record the subsequent dynamics of the photoexcited carriers. Our results are consistent with carrier recombination via defect-assisted processes. We also observe transient polarization-selective optical absorption of the probe pulse by defect states under nonequilibrium conditions. A rate equation model for electron and hole capture by defects is proposed and used to explain the data. Whereas the rate constants for electron capture by defects are found to be temperature-independent, they are measured to be strongly temperature-dependent for hole capture and point to a lattice deformation/relaxation process accompanying hole capture. Our results shed light on the mechanisms and rates associated with carrier capture by defects in $β$-Ga$_2$O$_3$.
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Submitted 17 December, 2018;
originally announced December 2018.
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Temperature-dependent spin-resolved electronic structure of EuO thin films
Authors:
Tristan Heider,
Timm Gerber,
Okan Köksal,
Markus Eschbach,
Ewa Młyńczak,
Patrick Lömker,
Pika Gospodaric,
Mathias Gehlmann,
Moritz Plötzing,
Rossitza Pentcheva,
Lukasz Plucinski,
Claus M. Schneider,
Martina Müller
Abstract:
The electronic structure of the ferromagnetic semiconductor EuO is investigated by means of spin- and angle-resolved photoemission spectroscopy (spin-ARPES) and density functional theory. EuO exhibits unique properties of hosting both weakly-dispersive nearly fully polarized Eu $4f$ bands, as well as O $2p$ levels indirectly exchange-split by the interaction with Eu nearest neighbors. Our temperat…
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The electronic structure of the ferromagnetic semiconductor EuO is investigated by means of spin- and angle-resolved photoemission spectroscopy (spin-ARPES) and density functional theory. EuO exhibits unique properties of hosting both weakly-dispersive nearly fully polarized Eu $4f$ bands, as well as O $2p$ levels indirectly exchange-split by the interaction with Eu nearest neighbors. Our temperature-dependent spin-ARPES data directly demonstrates the exchange splitting in O $2p$ and its vanishing at the Curie temperature. Our calculations with a Hubbard $U$ term reveal a complex nature of the local exchange splitting on the oxygen site and in conduction bands. We discuss the mechanisms of the indirect exchange in the O 2p levels by analyzing orbital-resolved band characters in ferromagnetic and antiferromagnetic phases. The directional effects due to spin-orbit coupling are predicted theoretically to be significant in particular in the Eu 4f band manifold. The analysis of the shape of spin-resolved spectra in the Eu $4f$ spectral region reveals signatures of hybridization with O $2p$, in agreement with the theoretical predictions. We also analyze spectral changes in the spin-integrated spectra throughout the Curie temperature and demonstrate they derive from both the magnetic phase transition and effects due to sample aging, unavoidable for this highly reactive material.
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Submitted 3 September, 2022; v1 submitted 3 September, 2018;
originally announced September 2018.
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Interaction-driven spin-orbit effects and Chern insulating phases in corundum-based $4d$ and $5d$ oxide honeycomb lattices
Authors:
Okan Köksal,
Rossitza Pentcheva
Abstract:
Using density functional theory calculations with a Hubbard $U$, we explore topologically nontrivial phases in $X_2$O$_3$ honeycomb layers with $X=$ $4d$ and $5d$ cation inserted in the band insulator $α$-Al$_2$O$_3$ along the [0001]-direction. Several promising candidates for quantum anomalous Hall insulators (QAHI) are identified. In particular, for $X$=Tc and Pt spin-orbit coupling (SOC) opens…
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Using density functional theory calculations with a Hubbard $U$, we explore topologically nontrivial phases in $X_2$O$_3$ honeycomb layers with $X=$ $4d$ and $5d$ cation inserted in the band insulator $α$-Al$_2$O$_3$ along the [0001]-direction. Several promising candidates for quantum anomalous Hall insulators (QAHI) are identified. In particular, for $X$=Tc and Pt spin-orbit coupling (SOC) opens a gap of 54 and 59 meV, respectively, leading to Chern insulators (CI) with $C$=--2 and --1. The nature of different Chern numbers is related to the corresponding spin textures. The Chern insulating phase is sensitive to the Coulomb repulsion strength: $X$=Tc undergoes a transition from a CI to a trivial metallic state beyond a critical strength of $U_c$ =2.5 eV. A comparison between the isoelectronic metastable FM phases of $X$=Pd and Pt emphasizes the intricate balance between electronic correlations and SOC: while the former is a trivial insulator, the latter is a Chern insulator. In addition, $X$=Os turns out to be a FM Mott insulator with an unpaired electron in the $t_{2g}$ manifold where SOC induces an unusually high orbital moment of 0.34 $μ_{\rm B}$ along the $z$-axis. Parallels to the $3d$ honeycomb corundum cases are discussed.
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Submitted 10 November, 2018; v1 submitted 20 March, 2018;
originally announced March 2018.
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Confinement-driven electronic and topological phases in corundum-derived $3d$-oxide honeycomb lattices
Authors:
Okan Köksal,
Santu Baidya,
Rossitza Pentcheva
Abstract:
Using density functional theory calculations including an on-site Coulomb term, we explore electronic and possibly topologically nontrivial phases in $3d$ transition metal oxide honeycomb layers confined in the corundum structure ($α$-Al$_2$O$_3$) along the [0001] direction. In most cases the ground state is a trivial antiferromagnetic Mott insulator, often with distinct orbital or spin states com…
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Using density functional theory calculations including an on-site Coulomb term, we explore electronic and possibly topologically nontrivial phases in $3d$ transition metal oxide honeycomb layers confined in the corundum structure ($α$-Al$_2$O$_3$) along the [0001] direction. In most cases the ground state is a trivial antiferromagnetic Mott insulator, often with distinct orbital or spin states compared to the bulk phases. With imposed symmetry of the two sublattices the ferromagnetic phases of Ti, Mn, Co and Ni exhibit a characteristic set of four bands, two relatively flat and two with a Dirac crossing at K, associated with the single electron occupation of $e_{g}'$ (Ti) or $e_{g}$ (Mn, Co, Ni) orbitals. Our results indicate that the Dirac point can be tuned to the Fermi level using strain. Applying spin-orbit coupling (SOC) leads to a substantial anomalous Hall conductivity with values up to 0.94 $e^2/h$. Moreover, at $a_{Al_2O_3}$=4.81Å we identify a particularly strong effect of SOC with out-of-plane easy axis for ($Ti_2$O$_3$)$_1$/(Al$_2$O$_3$)$_5$(0001) which stabilizes dynamically the system. Due to the unusually high orbital moment of -0.88$μ_{\rm B}$ that nearly compensates the spin moment of 1.01$μ_{\rm B}$, this system emerges as a candidate for the realization of the topological Haldane model of spinless fermions. Parallels to the perovskite analogs (La$X$O$_3$)$_2$/(LaAlO$_3$)$_4$(111) are discussed.
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Submitted 6 December, 2017; v1 submitted 28 April, 2017;
originally announced April 2017.
