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Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
Authors:
Radha Krishnan,
Beng Yee Gan,
Yu-Ling Hsueh,
A. M. Saffat-Ee Huq,
Jonathan Kenny,
Rajib Rahman,
Teck Seng Koh,
Michelle Y. Simmons,
Bent Weber
Abstract:
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that the strength of the spin-orbit co…
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While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that the strength of the spin-orbit coupling can be locally enhanced by more than two orders of magnitude in the manybody wave functions of multi-donor quantum dots compared to a single donor, reaching strengths so far only reported for holes or two-donor system with certain symmetry. Our findings may provide a pathway towards all-electrical control of donor-bound spins in silicon using electric dipole spin resonance (EDSR).
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Submitted 24 April, 2024;
originally announced April 2024.
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High-Fidelity CZ Gates in Double Quantum Dot -- Circuit QED Systems Beyond the Rotating-Wave Approximation
Authors:
Guangzhao Yang,
Marek Gluza,
Si Yan Koh,
Calvin Pei Yu Wong,
Kuan Eng Johnson Goh,
Bent Weber,
Hui Khoon Ng,
Teck Seng Koh
Abstract:
Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge degrees of freedom. Quantum gates can be implemented by parametrically driving the qubits while their transition frequencies are detuned from the resonator frequency. Long-range two-qubit CZ gates have been proposed for th…
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Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge degrees of freedom. Quantum gates can be implemented by parametrically driving the qubits while their transition frequencies are detuned from the resonator frequency. Long-range two-qubit CZ gates have been proposed for the DQD spin qubit within the rotating-wave approximation (RWA). Rapid gates demand strong coupling, but RWA breaks down when coupling strengths become significant relative to system frequencies. Therefore, understanding the detrimental impact of time-dependent terms ignored by RWA is critical for high-fidelity operation. Here, we go beyond RWA to study CZ gate fidelity for both DQD spin and charge qubits. We propose a novel parametric drive on the charge qubit that produces fewer time-dependent terms and show that it outperforms its spin counterpart. We find that drive amplitude - a parameter dropped in RWA - is critical for optimizing fidelity and map out high-fidelity regimes. Our results demonstrate the necessity of going beyond RWA in understanding how long-range gates can be realized in DQD qubits, with charge qubits offering considerable advantages in high-fidelity operation.
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Submitted 9 April, 2024;
originally announced April 2024.
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Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
Authors:
Thasneem Aliyar,
Hongyang Ma,
Radha Krishnan,
Gagandeep Singh,
Bi Qi Chong,
Yitao Wang,
Ivan Verzhbitskiy,
Calvin Pei Yu Wong,
Kuan Eng Johnson Goh,
Ze Xiang Shen,
Teck Seng Koh,
Rajib Rahman,
Bent Weber
Abstract:
Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulphur vacancies in molybdenum disulphide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. S…
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Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulphur vacancies in molybdenum disulphide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. Spectroscopic mapping of defect wavefunctions reveals an interplay of local symmetry breaking by a charge-state dependent Jahn-Teller lattice distortion that, when combined with strong (~100 meV) spin-orbit coupling, leads to a locking of an unpaired spin-1/2 magnetic moment to the lattice at low temperature, susceptible to lattice strain. Our results provide new insights into spin and electronic structure of vacancy induced in-gap states towards their application as electrically and optically addressable quantum systems.
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Submitted 20 February, 2024; v1 submitted 2 February, 2024;
originally announced February 2024.
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Ghost factors in Gauss-sum factorization with transmon qubits
Authors:
Lin Htoo Zaw,
Yuanzheng Paul Tan,
Long Hoang Nguyen,
Rangga P. Budoyo,
Kun Hee Park,
Zhi Yang Koh,
Alessandro Landra,
Christoph Hufnagel,
Yung Szen Yap,
Teck Seng Koh,
Rainer Dumke
Abstract:
A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the misidentification of non-factors as factors or vice versa, especially in the presence of noise. We investigate Type II ghost factors, which are the class of ghost factors that cannot be suppressed with techniques previousl…
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A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the misidentification of non-factors as factors or vice versa, especially in the presence of noise. We investigate Type II ghost factors, which are the class of ghost factors that cannot be suppressed with techniques previously laid out in the literature. The presence of Type II ghost factors and the coherence time of the qubit set an upper limit for the total experiment time, and hence the largest factorizable number with this scheme. Discernability is a figure of merit introduced to characterize this behavior. We introduce preprocessing as a strategy to increase the discernability of a system, and demonstrate the technique with a transmon qubit. This can bring the total experiment time of the system closer to its decoherence limit, and increase the largest factorizable number.
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Submitted 8 December, 2021; v1 submitted 22 April, 2021;
originally announced April 2021.
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Two-qubit sweet spots for capacitively coupled exchange-only spin qubits
Authors:
MengKe Feng,
Lin Htoo Zaw,
Teck Seng Koh
Abstract:
The implementation of high fidelity two-qubit gates is a bottleneck in the progress towards universal quantum computation in semiconductor quantum dot qubits. We study capacitive coupling between two triple quantum dot spin qubits encoded in the $S = 1/2$, $S_z = -1/2$ decoherence-free subspace -- the exchange-only (EO) spin qubits. We report exact gate sequences for CPHASE and CNOT gates, and dem…
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The implementation of high fidelity two-qubit gates is a bottleneck in the progress towards universal quantum computation in semiconductor quantum dot qubits. We study capacitive coupling between two triple quantum dot spin qubits encoded in the $S = 1/2$, $S_z = -1/2$ decoherence-free subspace -- the exchange-only (EO) spin qubits. We report exact gate sequences for CPHASE and CNOT gates, and demonstrate theoretically, the existence of multiple two-qubit sweet spots (2QSS) in the parameter space of capacitively coupled EO qubits. Gate operations have the advantage of being all-electrical, but charge noise that couple to electrical parameters of the qubits cause decoherence. Assuming noise with a 1/f spectrum, two-qubit gate fidelities and times are calculated, which provide useful information on the noise threshold necessary for fault-tolerance. We study two-qubit gates at single and multiple parameter 2QSS. In particular, for two existing EO implementations -- the resonant exchange (RX) and the always-on exchange-only (AEON) qubits -- we compare two-qubit gate fidelities and times at positions in parameter space where the 2QSS are simultaneously single-qubit sweet spots (1QSS) for the RX and AEON. These results provide a potential route to the realization of high fidelity quantum computation.
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Submitted 22 August, 2021; v1 submitted 29 March, 2021;
originally announced March 2021.
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Coherent transfer of singlet-triplet qubit states in an architecture of triple quantum dots
Authors:
MengKe Feng,
Chang Jian Kwong,
Teck Seng Koh,
Leong Chuan Kwek
Abstract:
We propose two schemes to coherently transfer arbitrary quantum states of the two-electron singlet-triplet qubit across a chain of 3 quantum dots. The schemes are based on electrical control over the detuning energy of the quantum dots. The first is a pulse-gated scheme, requiring dc pulses and engineering of inter- and intra-dot Coulomb energies. The second scheme is based on the adiabatic theore…
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We propose two schemes to coherently transfer arbitrary quantum states of the two-electron singlet-triplet qubit across a chain of 3 quantum dots. The schemes are based on electrical control over the detuning energy of the quantum dots. The first is a pulse-gated scheme, requiring dc pulses and engineering of inter- and intra-dot Coulomb energies. The second scheme is based on the adiabatic theorem, requiring time-dependent control of the detuning energy through avoided crossings at a rate that the system remains in the ground state. We simulate the transfer fidelity using typical experimental parameters for silicon quantum dots. Our results give state transfer fidelities between $94.3\% < \mathcal{F} < 99.5\%$ at sub-ns gate times for the pulse-gated scheme and between $75.4\% < \mathcal{F} < 99.0 \%$ at tens of ns for the adiabatic scheme. Taking into account dephasing from charge noise, we obtain state transfer fidelities between $94.0\% < \mathcal{F} < 99.2\%$ for the pulse-gated scheme and between $64.9\% < \mathcal{F} < 93.6\%$ for the adiabatic scheme.
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Submitted 21 June, 2018; v1 submitted 27 February, 2016;
originally announced February 2016.
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Characterizing gate operations near the sweet spot of an exchange-only qubit
Authors:
Jianjia Fei,
Jo-Tzu Hung,
Teck Seng Koh,
Yun-Pil Shim,
S. N. Coppersmith,
Xuedong Hu,
Mark Friesen
Abstract:
Optimal working points or "sweet spots" have arisen as an important tool for mitigating charge noise in quantum dot logical spin qubits. The exchange-only qubit provides an ideal system for studying this effect because $Z$ rotations are performed directly at the sweet spot, while $X$ rotations are not. Here for the first time we quantify the ability of the sweet spot to mitigate charge noise by tr…
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Optimal working points or "sweet spots" have arisen as an important tool for mitigating charge noise in quantum dot logical spin qubits. The exchange-only qubit provides an ideal system for studying this effect because $Z$ rotations are performed directly at the sweet spot, while $X$ rotations are not. Here for the first time we quantify the ability of the sweet spot to mitigate charge noise by treating $X$ and $Z$ rotations on an equal footing. Specifically, we optimize $X$ rotations and determine an upper bound on their fidelity. We find that sweet spots offer a fidelity improvement factor of at least 20 for typical GaAs devices, and more for Si devices.
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Submitted 13 March, 2015; v1 submitted 3 December, 2014;
originally announced December 2014.
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Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
Authors:
Dohun Kim,
Zhan Shi,
C. B. Simmons,
D. R. Ward,
J. R. Prance,
Teck Seng Koh,
John King Gamble,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for i…
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The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Further, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins, or the addition of a third quantum dot. Here we demonstrate a new qubit that offers both simplicity - it requires no special preparation and lives in a double quantum dot with no added complexity - and is very fast: we demonstrate full control on the Bloch sphere with $π$-rotation times less than 100 ps in two orthogonal directions. We report full process tomography, extracting high fidelities equal to or greater than 85% for X-rotations and 94% for Z-rotations. We discuss a path forward to fidelities better than the threshold for quantum error correction.
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Submitted 17 January, 2014;
originally announced January 2014.
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Fast coherent manipulation of three-electron states in a double quantum dot
Authors:
Zhan Shi,
C. B. Simmons,
Daniel R. Ward,
J. R. Prance,
Xian Wu,
Teck Seng Koh,
John King Gamble,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and control of two-state quantum systems, or qubits, in which each quantum dot is occupied by a single electron[2-7]. Here we perform quantum manipulations on…
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A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and control of two-state quantum systems, or qubits, in which each quantum dot is occupied by a single electron[2-7]. Here we perform quantum manipulations on a system with more electrons per quantum dot, in a double dot with three electrons. We demonstrate that tailored pulse sequences can be used to induce coherent rotations between 3-electron quantum states. Certain pulse sequences yield coherent oscillations with a very high figure of merit (the ratio of coherence time to rotation time) of >100. The presence of the third electron enables very fast rotations to all possible states, in contrast to the case when only two electrons are used, in which some rotations are slow. The minimum oscillation frequency we observe is >5 GHz.
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Submitted 2 August, 2013;
originally announced August 2013.
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High-fidelity gates in quantum dot spin qubits
Authors:
Teck Seng Koh,
S. N. Coppersmith,
Mark Friesen
Abstract:
Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet (ST) and the semic…
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Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet (ST) and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance (LQR), and a gate-like process known as stimulated Raman adiabatic passage (STIRAP). These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling $g$ and the detuning $ε$, which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity ($f$) for fixed $g$ as a function of the other control parameters; this yields an $f^\text{opt}(g)$ that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound $f^\text{max}$ that is specific to the qubit-gate combination. We show that similar gate fidelities ($ \sim 99.5$%) should be attainable for ST qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields $ΔB$ produced by nuclear spins.
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Submitted 6 December, 2013; v1 submitted 31 July, 2013;
originally announced July 2013.
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Coherent Quantum Oscillations in a Silicon Charge Qubit
Authors:
Zhan Shi,
C. B. Simmons,
Daniel. R. Ward,
J. R. Prance,
R. T. Mohr,
Teck Seng Koh,
John King Gamble,
Xian. Wu,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated b…
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Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise(charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127ps to 760ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.
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Submitted 17 July, 2013; v1 submitted 2 August, 2012;
originally announced August 2012.
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Pulse-gated quantum dot hybrid qubit
Authors:
Teck Seng Koh,
John King Gamble,
Mark Friesen,
M. A. Eriksson,
S. N. Coppersmith
Abstract:
A quantum dot hybrid qubit formed from three electrons in a double quantum dot has the potential for great speed, due to presence of level crossings where the qubit becomes charge-like. Here, we show how to take full advantage of the level crossings in a pulsed gating scheme, which decomposes the spin qubit into a series of charge transitions. We develop one and two-qubit dc quantum gates that are…
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A quantum dot hybrid qubit formed from three electrons in a double quantum dot has the potential for great speed, due to presence of level crossings where the qubit becomes charge-like. Here, we show how to take full advantage of the level crossings in a pulsed gating scheme, which decomposes the spin qubit into a series of charge transitions. We develop one and two-qubit dc quantum gates that are simpler than the previously proposed ac gates. We obtain closed form solutions for the control sequences and show that these sub-nanosecond gates can achieve high fidelities.
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Submitted 23 July, 2012;
originally announced July 2012.
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A fast "hybrid" silicon double quantum dot qubit
Authors:
Zhan Shi,
C. B. Simmons,
J. R. Prance,
John King Gamble,
Teck Seng Koh,
Yun-Pil Shim,
Xuedong Hu,
D. E. Savage,
M. G. Lagally,
M. A. Eriksson,
Mark Friesen,
S. N. Coppersmith
Abstract:
We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occ…
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We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occupied dot. The architecture is relatively simple to fabricate, a universal set of fast operations can be implemented electrically, and the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.
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Submitted 30 October, 2011;
originally announced October 2011.
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Tunable spin-selective loading of a silicon spin qubit
Authors:
C. B. Simmons,
J. R. Prance,
B. J. Van Bael,
Teck Seng Koh,
Zhan Shi,
D. E. Savage,
M. G. Lagally,
R. Joynt,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manip…
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The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications.
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Submitted 27 October, 2010;
originally announced October 2010.
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Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
Authors:
C. B. Simmons,
Teck Seng Koh,
Nakul Shaji,
Madhu Thalakulam,
L. J. Klein,
Hua Qin,
H. Luo,
D. E. Savage,
M. G. Lagally,
A. J. Rimberg,
Robert Joynt,
Robert Blick,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when…
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We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed.
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Submitted 5 April, 2011; v1 submitted 31 August, 2010;
originally announced August 2010.
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Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot
Authors:
Teck Seng Koh,
C. B. Simmons,
M. A. Eriksson,
S. N. Coppersmith,
Mark Friesen
Abstract:
Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double quantum dot in this regime cannot be fully explained using the conventional picture. Using a Hartree-Fock (HF) formalism and relevant HF energy parameters extrac…
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Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double quantum dot in this regime cannot be fully explained using the conventional picture. Using a Hartree-Fock (HF) formalism and relevant HF energy parameters extracted from transport data in the multiple-electron regime, we identify a novel spin-flip cotunneling process that lifts a singlet blockade.
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Submitted 13 July, 2011; v1 submitted 30 August, 2010;
originally announced August 2010.
