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Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
Authors:
David J. Christle,
Paul V. Klimov,
Charles F. de las Casas,
Krisztián Szász,
Viktor Ivády,
Valdas Jokubavicius,
Jawad ul Hassan,
Mikael Syväjärvi,
William F. Koehl,
Takeshi Ohshima,
Nguyen T. Son,
Erik Janzén,
Ádám Gali,
David D. Awschalom
Abstract:
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here we demonstra…
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The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here we demonstrate a high-fidelity spin-to-photon interface in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin-mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on shows promise for future quantum networks based on SiC defects.
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Submitted 25 February, 2017; v1 submitted 23 February, 2017;
originally announced February 2017.
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Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
Authors:
William F. Koehl,
Berk Diler,
Samuel J. Whiteley,
Alexandre Bourassa,
N. T. Son,
Erik Janzén,
David D. Awschalom
Abstract:
Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electro…
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Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electronic ground state of chromium (Cr4+) impurities in silicon carbide (SiC) and gallium nitride (GaN). Spin polarization is made possible by the narrow optical linewidths of these ensembles (< 8.5 GHz), which are similar in magnitude to the ground state zero-field spin splitting energies of the ions at liquid helium temperatures. We therefore are able to optically resolve individual spin sublevels within the ensembles at low magnetic fields using resonant excitation from a cavity-stabilized, narrow-linewidth laser. Additionally, these near-infrared emitters possess exceptionally weak phonon sidebands, ensuring that > 73% of the overall optical emission is contained with the defects zero-phonon lines. These characteristics make this semiconductor-based, transition metal impurity system a promising target for further study in the ongoing effort to integrate optically active quantum states within common optoelectronic materials.
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Submitted 29 August, 2016;
originally announced August 2016.
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Optical polarization of nuclear spins in silicon carbide
Authors:
Abram L. Falk,
Paul V. Klimov,
Viktor Ivády,
Krisztián Szász,
David J. Christle,
William F. Koehl,
Ádám Gali,
David D. Awschalom
Abstract:
We demonstrate optically pumped dynamic nuclear polarization of 29-Si nuclear spins that are strongly coupled to paramagnetic color centers in 4H- and 6H-SiC. The 99 +/- 1% degree of polarization at room temperature corresponds to an effective nuclear temperature of 5 microKelvin. By combining ab initio theory with the experimental identification of the color centers' optically excited states, we…
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We demonstrate optically pumped dynamic nuclear polarization of 29-Si nuclear spins that are strongly coupled to paramagnetic color centers in 4H- and 6H-SiC. The 99 +/- 1% degree of polarization at room temperature corresponds to an effective nuclear temperature of 5 microKelvin. By combining ab initio theory with the experimental identification of the color centers' optically excited states, we quantitatively model how the polarization derives from hyperfine-mediated level anticrossings. These results lay a foundation for SiC-based quantum memories, nuclear gyroscopes, and hyperpolarized probes for magnetic resonance imaging.
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Submitted 26 February, 2015;
originally announced February 2015.
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Electrically and mechanically tunable electron spins in silicon carbide color centers
Authors:
Abram L. Falk,
Paul V. Klimov,
Bob B. Buckley,
Viktor Ivády,
Igor A. Abrikosov,
Greg Calusine,
William F. Koehl,
Ádám Gali,
David D. Awschalom
Abstract:
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6 strain sensi…
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The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6 strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15-36%. These results establish SiC color centers as compelling systems for sensing nanoscale fields.
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Submitted 26 November, 2013;
originally announced November 2013.
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Polytype control of spin qubits in silicon carbide
Authors:
Abram L. Falk,
Bob B. Buckley,
Greg Calusine,
William F. Koehl,
Viatcheslav V. Dobrovitski,
Alberto Politi,
Christian A. Zorman,
Philip X. -L. Feng,
David D. Awschalom
Abstract:
Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin systems with an expanded set of technological capabilities, a materials driven approach that could ultimately lead to "designer" spins with tailored properties.…
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Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin systems with an expanded set of technological capabilities, a materials driven approach that could ultimately lead to "designer" spins with tailored properties. Here, we show that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states, including spins in all three with room-temperature quantum coherence. The prevalence of this spin coherence shows that crystal polymorphism can be a degree of freedom for engineering spin qubits. Long spin coherence times allow us to use double electron-electron resonance to measure magnetic dipole interactions between spin ensembles in inequivalent lattice sites of the same crystal. Together with the distinct optical and spin transition energies of such inequivalent spins, these interactions provide a route to dipole-coupled networks of separately addressable spins.
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Submitted 10 May, 2013;
originally announced May 2013.
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Quantum computing with defects
Authors:
J. R. Weber,
W. F. Koehl,
J. B. Varley,
A. Janotti,
B. B. Buckley,
C. G. Van de Walle,
D. D. Awschalom
Abstract:
Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV-1) center stands out for its robustness - its quantum state can be initialized, manipulated, and measured with high fidelity at room temper…
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Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV-1) center stands out for its robustness - its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally-coordinated semiconductors.
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Submitted 8 March, 2010;
originally announced March 2010.
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Current-Induced Spin Polarization in Gallium Nitride
Authors:
W. F. Koehl,
M. H. Wong,
C. Poblenz,
B. Swenson,
U. K. Mishra,
J. S. Speck,
D. D. Awschalom
Abstract:
Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) with a variety of doping densities chosen to broadly modulate the transverse spin lifetime, T2*. The spin polarization is characterized as…
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Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) with a variety of doping densities chosen to broadly modulate the transverse spin lifetime, T2*. The spin polarization is characterized as a function of electrical excitation energy over a range of temperatures. Despite weak spin-orbit interactions in GaN, a current-induced spin polarization (CISP) is observed in the material at temperatures of up to 200 K.
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Submitted 3 June, 2009;
originally announced June 2009.
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Zero-field splitting of Kondo resonances in a carbon nanotube quantum dot
Authors:
J. Nygard,
W. F. Koehl,
N. Mason,
L. DiCarlo,
C. M. Marcus
Abstract:
We present low-temperature electron transport measurements on a single-wall carbon nanotube quantum dot exhibiting Kondo resonances at low temperature. Contrary to the usual behavior for the spin-1/2 Kondo effect we find that the temperature dependence of the zero bias conductance is nonmonotonic. In nonlinear transport measurements low-energy splittings of the Kondo resonances are observed at z…
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We present low-temperature electron transport measurements on a single-wall carbon nanotube quantum dot exhibiting Kondo resonances at low temperature. Contrary to the usual behavior for the spin-1/2 Kondo effect we find that the temperature dependence of the zero bias conductance is nonmonotonic. In nonlinear transport measurements low-energy splittings of the Kondo resonances are observed at zero magnetic field. We suggest that these anomalies reflect interactions between the nanotube and a magnetic (catalyst) particle. The nanotube device may effectively act as a ferromagnetically contacted Kondo dot.
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Submitted 25 October, 2004; v1 submitted 19 October, 2004;
originally announced October 2004.
