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Localized quasiparticles in a fluxonium with quasi-two-dimensional amorphous kinetic inductors
Authors:
Trevyn F. Q. Larson,
Sarah Garcia Jones,
Tamás Kalmár,
Pablo Aramburu Sanchez,
Sai Pavan Chitta,
Varun Verma,
Kristen Genter,
Katarina Cicak,
Sae Woo Nam,
Gergő Fülöp,
Jens Koch,
Ray W. Simmonds,
András Gyenis
Abstract:
Disordered superconducting materials with high kinetic inductance are an important resource to generate nonlinearity in quantum circuits and create high-impedance environments. In thin films fabricated from these materials, the combination of disorder and the low effective dimensionality leads to increased order parameter fluctuations and enhanced kinetic inductance values. Among the challenges of…
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Disordered superconducting materials with high kinetic inductance are an important resource to generate nonlinearity in quantum circuits and create high-impedance environments. In thin films fabricated from these materials, the combination of disorder and the low effective dimensionality leads to increased order parameter fluctuations and enhanced kinetic inductance values. Among the challenges of harnessing these compounds in coherent devices are their proximity to the superconductor-insulator phase transition, the presence of broken Cooper pairs, and the two-level systems located in the disordered structure. In this work, we fabricate tungsten silicide wires from quasi-two-dimensional films with one spatial dimension smaller than the superconducting coherence length and embed them into microwave resonators and fluxonium qubits, where the kinetic inductance provides the inductive part of the circuits. We study the dependence of loss on the frequency, disorder, and geometry of the device, and find that the loss increases with the level of disorder and is dominated by the localized quasiparticles trapped in the spatial variations of the superconducting gap.
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Submitted 10 April, 2025;
originally announced April 2025.
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Homogeneous doping of epitaxial graphene by Pb(111) islands: A magnetotransport study
Authors:
Julian Koch,
Sergii Sologub,
Dorothee Sylvia Boesler,
Chitran Ghosal,
Teresa Tschirner,
Klaus Pierz,
Hans Werner Schumacher,
Christoph Tegenkamp
Abstract:
Proximity coupling is an effective approach for the functionalization of graphene. However, graphene's inertness inhibits the adsorption of closed films, thus favoring island growth, whose inhomogeneity might be reflected in the induced properties. In order to study the homogeneity of the doping profile induced by an inhomogeneous coverage and the spin orbit coupling (SOC) induced in graphene, we…
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Proximity coupling is an effective approach for the functionalization of graphene. However, graphene's inertness inhibits the adsorption of closed films, thus favoring island growth, whose inhomogeneity might be reflected in the induced properties. In order to study the homogeneity of the doping profile induced by an inhomogeneous coverage and the spin orbit coupling (SOC) induced in graphene, we deposited Pb(111) islands with an average coverage of up to 30 ML on monolayer graphene (MLG) on SiC(0001) at room temperature (RT). We investigated the transport properties and the structure using magnetotransport, and scanning tunneling microscopy and low energy electron deflection, respectively. The Pb(111) islands act as donors, increasing the electron concentration of graphene by about $5\times10^{11}\;\text{ML}^{-1}\text{cm}^{-2}$. The doping was found to be homogeneous, in stark contrast to our previous results for Bi islands on MLG. Upon percolation of the Pb layer at around 5 ML, hole transport through the Pb islands has to be taken into account in order to describe the transport data. The Pb(111) islands do not induce any Rashba SOC, contrary to theoretical predictions for an interface between Pb(111) and graphene. Moreover, they seem to screen the defects in the graphene, resulting in a reduction of the intervalley scattering rate up to 5 ML.
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Submitted 27 February, 2025;
originally announced February 2025.
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Towards a micromechanical qubit based on quantized oscillations in superfluid helium
Authors:
Priya Sharma,
Jens Koch,
Eran Ginossar
Abstract:
Superconducting circuits can exhibit quantized energy levels and long coherence times. Harnessing the anharmonicity offered by Josephson junctions, such circuits have been successfully employed as qubits, quantum limited amplifiers and sensors. Here, we consider superfluidity as the charge-neutral analogue of superconductivity. Both dissipationless mass flow and Josephson tunneling have been demon…
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Superconducting circuits can exhibit quantized energy levels and long coherence times. Harnessing the anharmonicity offered by Josephson junctions, such circuits have been successfully employed as qubits, quantum limited amplifiers and sensors. Here, we consider superfluidity as the charge-neutral analogue of superconductivity. Both dissipationless mass flow and Josephson tunneling have been demonstrated in superfluid helium. We propose a quantum device, consisting of a superfluid weak link and a mechanical element. The superfluid motion in this device is quantized. The resulting discrete energy levels are resolvable at millikelvin temperatures essential to maintaining the superfluid state. Appropriate device engineering can yield the necessary nonlinearity to realize qubit functionality. Hence, this device can potentially operate as a charge-neutral, superfluid quantum bit with micron-sized dimensions and millisecond scale coherence time. We show that this quantum regime is within reach for a range of device designs.
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Submitted 22 June, 2025; v1 submitted 3 September, 2024;
originally announced September 2024.
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Demonstration of high-impedance superconducting NbRe Dayem bridges
Authors:
S. Battisti,
J. Koch,
A. Paghi,
L. Ruf,
A. Gulian,
S. Teknowijoyo,
C. Cirillo,
Z. Makhdoumi Kakhaki,
C. Attanasio,
E. Scheer,
A. Di Bernardo,
G. De Simoni,
F. Giazotto
Abstract:
Here we demonstrate superconducting Dayem-bridge weak-links made of different stoichiometric compositions of NbRe. Our devices possess a relatively high critical temperature, normal-state resistance, and kinetic inductance. In particular, the high kinetic inductance makes this material a good alternative to more conventional niobium-based superconductors (e.g., NbN or NbTiN) for the realization of…
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Here we demonstrate superconducting Dayem-bridge weak-links made of different stoichiometric compositions of NbRe. Our devices possess a relatively high critical temperature, normal-state resistance, and kinetic inductance. In particular, the high kinetic inductance makes this material a good alternative to more conventional niobium-based superconductors (e.g., NbN or NbTiN) for the realization of superinductors and high-quality factor resonators, whereas the high normal-state resistance yields a large output voltage in superconducting switches and logic elements realized upon this compound. Moreover, out-of-plane critical magnetic fields exceeding 2 T ensure that possible applications requiring high magnetic fields can also be envisaged. Altogether, these features make this material appealing for a number of applications in the framework of quantum technologies.
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Submitted 15 May, 2024; v1 submitted 7 December, 2023;
originally announced December 2023.
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Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium
Authors:
Jennifer Koch,
Carla Cirillo,
Sebastiano Battisti,
Leon Ruf,
Zahra Makhdoumi Kakhaki,
Alessandro Paghi,
Armen Gulian,
Serafim Teknowijoyo,
Giorgio De Simoni,
Francesco Giazotto,
Carmine Attanasio,
Elke Scheer,
Angelo Di Bernardo
Abstract:
The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS mu…
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The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS must be identified. Top-down fabrication protocols should be also optimized to increase device scalability, although studies suggest that top-down fabricated devices are more resilient to show GCS. Here, we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the non-centrosymmetric superconductor NbRe. Unlike other devices previously reported, our NbRe devices systematically exhibit GCS, when made in specific conditions, which paves the way for higher device scalability. Our results also suggest that surface properties of NbRe nanobridges and their modification during fabrication are key for GCS.
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Submitted 7 December, 2023;
originally announced December 2023.
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Unravelling Interaction and Temperature Contributions in Unpolarized Trapped Fermionic Atoms in the BCS Regime
Authors:
Sejung Yong,
Sian Barbosa,
Jennifer Koch,
Felix Lang,
Axel Pelster,
Artur Widera
Abstract:
In the BCS limit density profiles for unpolarized trapped fermionic clouds of atoms are largely featureless. Therefore, it is a delicate task to analyze them in order to quantify their respective interaction and temperature contributions. Temperature measurements have so far been mostly considered in an indirect way, where one sweeps isentropically from the BCS to the BEC limit. Instead we suggest…
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In the BCS limit density profiles for unpolarized trapped fermionic clouds of atoms are largely featureless. Therefore, it is a delicate task to analyze them in order to quantify their respective interaction and temperature contributions. Temperature measurements have so far been mostly considered in an indirect way, where one sweeps isentropically from the BCS to the BEC limit. Instead we suggest here a direct thermometry, which relies on measuring the column density and comparing the obtained data with a Hartree-Bogoliubov mean-field theory combined with a local density approximation. In case of an attractive interaction between two-components of $^{6}$Li atoms trapped in a tri-axial harmonic confinement we show that minimizing the error within such an experiment-theory collaboration turns out to be a reasonable criterion for analyzing in detail measured densities and, thus, for ultimately determining the sample temperatures. The findings are discussed in view of various possible sources of errors.
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Submitted 15 November, 2023;
originally announced November 2023.
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Stabilizing an ultracold Fermi gas against Fermi acceleration to superdiffusion through localization
Authors:
Sian Barbosa,
Maximilian Kiefer-Emmanouilidis,
Felix Lang,
Jennifer Koch,
Artur Widera
Abstract:
Anderson localization, i.e., destructive quantum interference of multiple-scattering paths, halts transport entirely. Contrarily, time-dependent random forces expedite transport via Fermi acceleration, proposed as a mechanism for high-energy cosmic rays. Their competition creates interesting dynamics, but experimental observations are scarce. Here, we experimentally study the expansion of an ultra…
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Anderson localization, i.e., destructive quantum interference of multiple-scattering paths, halts transport entirely. Contrarily, time-dependent random forces expedite transport via Fermi acceleration, proposed as a mechanism for high-energy cosmic rays. Their competition creates interesting dynamics, but experimental observations are scarce. Here, we experimentally study the expansion of an ultracold Fermi gas inside time-dependent disorder and observe distinct regimes from sub- to superdiffusion. Unexpectedly, quantum interference counteracts acceleration in strong disorder. Our system enables the investigation of Fermi acceleration in the quantum-transport regime.
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Submitted 14 May, 2024; v1 submitted 14 November, 2023;
originally announced November 2023.
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What can we learn from diffusion about Anderson localization of a degenerate Fermi gas?
Authors:
Sian Barbosa,
Maximilian Kiefer-Emmanouilidis,
Felix Lang,
Jennifer Koch,
Artur Widera
Abstract:
Disorder can fundamentally modify the transport properties of a system. A striking example is Anderson localization, suppressing transport due to destructive interference of propagation paths. In inhomogeneous many-body systems, not all particles are localized for finite-strength disorder, and the system can become partially diffusive. Unravelling the intricate signatures of localization from such…
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Disorder can fundamentally modify the transport properties of a system. A striking example is Anderson localization, suppressing transport due to destructive interference of propagation paths. In inhomogeneous many-body systems, not all particles are localized for finite-strength disorder, and the system can become partially diffusive. Unravelling the intricate signatures of localization from such observed diffusion is a long-standing problem. Here, we experimentally study a degenerate, spin-polarized Fermi gas in a disorder potential formed by an optical speckle pattern. We record the diffusion in the disordered potential upon release from an external confining potential. We compare different methods to analyze the resulting density distributions, including a new method to capture particle dynamics by evaluating absorption-image statistics. Using standard observables, such as diffusion exponent and coefficient, localized fraction, or localization length, we find that some show signatures for a transition to localization above a critical disorder strength, while others show a smooth crossover to a modified diffusion regime. In laterally displaced disorder, we spatially resolve different transport regimes simultaneously which allows us to extract the subdiffusion exponent expected for weak localization. Our work emphasizes that the transition toward localization can be investigated by closely analyzing the system's diffusion, offering ways of revealing localization effects beyond the signature of exponentially decaying density distribution.
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Submitted 23 February, 2024; v1 submitted 13 November, 2023;
originally announced November 2023.
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Stability and sensitivity of interacting fermionic superfluids to quenched disorder
Authors:
Jennifer Koch,
Sian Barbosa,
Felix Lang,
Artur Widera
Abstract:
The microscopic pair structure of superfluids has profound consequences on their properties. Delocalized pairs are predicted to be less affected by static disorder than localized pairs. Ultracold gases allow tuning the pair size via interactions, where for resonant interaction superfluids shows largest critical velocity, i.e. stability against perturbations. The sensitivity of such fluids to stron…
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The microscopic pair structure of superfluids has profound consequences on their properties. Delocalized pairs are predicted to be less affected by static disorder than localized pairs. Ultracold gases allow tuning the pair size via interactions, where for resonant interaction superfluids shows largest critical velocity, i.e. stability against perturbations. The sensitivity of such fluids to strong, time-dependent disorder is less explored. Here, we investigate ultracold, interacting Fermi gases across various interaction regimes after rapid switching optical disorder potentials. We record the ability for quantum hydrodynamic expansion of the gas to quantify its long-range phase coherence. Contrary to static expectations, the Bose-Einstein condensate (BEC) exhibits significant resilience against disorder quenches, while the resonantly interacting Fermi gas permanently loses quantum hydrodynamics. Our findings suggest an additional absorption channel perturbing the resonantly interacting gas as pairs can be directly affected by the disorder quench.
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Submitted 8 September, 2024; v1 submitted 17 October, 2023;
originally announced October 2023.
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Tunable inductive coupler for high fidelity gates between fluxonium qubits
Authors:
Helin Zhang,
Chunyang Ding,
D. K. Weiss,
Ziwen Huang,
Yuwei Ma,
Charles Guinn,
Sara Sussman,
Sai Pavan Chitta,
Danyang Chen,
Andrew A. Houck,
Jens Koch,
David I. Schuster
Abstract:
The fluxonium qubit is a promising candidate for quantum computation due to its long coherence times and large anharmonicity. We present a tunable coupler that realizes strong inductive coupling between two heavy-fluxonium qubits, each with $\sim50$MHz frequencies and $\sim5$ GHz anharmonicities. The coupler enables the qubits to have a large tuning range of $\textit{XX}$ coupling strengths (…
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The fluxonium qubit is a promising candidate for quantum computation due to its long coherence times and large anharmonicity. We present a tunable coupler that realizes strong inductive coupling between two heavy-fluxonium qubits, each with $\sim50$MHz frequencies and $\sim5$ GHz anharmonicities. The coupler enables the qubits to have a large tuning range of $\textit{XX}$ coupling strengths ($-35$ to $75$ MHz). The $\textit{ZZ}$ coupling strength is $<3$kHz across the entire coupler bias range, and $<100$Hz at the coupler off-position. These qualities lead to fast, high-fidelity single- and two-qubit gates. By driving at the difference frequency of the two qubits, we realize a $\sqrt{i\mathrm{SWAP}}$ gate in $258$ns with fidelity $99.72\%$, and by driving at the sum frequency of the two qubits, we achieve a $\sqrt{b\mathrm{SWAP}}$ gate in $102$ns with fidelity $99.91\%$. This latter gate is only 5 qubit Larmor periods in length. We run cross-entropy benchmarking for over $20$ consecutive hours and measure stable gate fidelities, with $\sqrt{b\mathrm{SWAP}}$ drift ($2 σ$) $< 0.02\%$ and $\sqrt{i\mathrm{SWAP}}$ drift $< 0.08\%$.
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Submitted 25 September, 2023; v1 submitted 11 September, 2023;
originally announced September 2023.
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Discovery of interlayer plasmon polaron in graphene/WS$_2$ heterostructures
Authors:
Søren Ulstrup,
Yann in 't Veld,
Jill A. Miwa,
Alfred J. H. Jones,
Kathleen M. McCreary,
Jeremy T. Robinson,
Berend T. Jonker,
Simranjeet Singh,
Roland J. Koch,
Eli Rotenberg,
Aaron Bostwick,
Chris Jozwiak,
Malte Rösner,
Jyoti Katoch
Abstract:
Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to the electron-phonon interaction, the conducting states get "dressed". This leads to the formation of polaronic quasiparticles that dramatically impact charge tran…
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Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to the electron-phonon interaction, the conducting states get "dressed". This leads to the formation of polaronic quasiparticles that dramatically impact charge transport, surface reactivity, thermoelectric and optical properties, as observed in a variety of crystals and interfaces composed of polar materials [2-6]. Similarly, when oscillations of the charge density couple to conduction electrons the more elusive plasmon polaron emerges [7], which has been detected in electron-doped semiconductors [8-10]. However, the exploration of polaronic effects on low energy excitations is still in its infancy in two-dimensional (2D) materials. Here, we present the discovery of an interlayer plasmon polaron in heterostructures composed of graphene on top of SL WS$_2$. By using micro-focused angle-resolved photoemission spectroscopy (microARPES) during in situ doping of the top graphene layer, we observe a strong quasiparticle peak accompanied by several carrier density-dependent shake-off replicas around the SL WS$_2$ conduction band minimum (CBM). Our results are explained by an effective many-body model in terms of a coupling between SL WS$_2$ conduction electrons and graphene plasmon modes. It is important to take into account the presence of such interlayer collective modes, as they have profound consequences for the electronic and optical properties of heterostructures that are routinely explored in many device architectures involving 2D transition metal dichalcogenides (TMDs) [11-15].
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Submitted 31 August, 2023;
originally announced August 2023.
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Characterizing quantum gases in time-controlled disorder realizations using cross-correlations of density distributions
Authors:
Silvia Hiebel,
Benjamin Nagler,
Sian Barbosa,
Jennifer Koch,
Artur Widera
Abstract:
The role of disorder on physical systems has been widely studied in the macroscopic and microscopic world. While static disorder is well understood in many cases, the impact of time-dependent disorder on quantum gases is still poorly investigated. In our experimental setup, we introduce and characterize a method capable of producing time-controlled optical-speckle disorder. Experimentally, coheren…
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The role of disorder on physical systems has been widely studied in the macroscopic and microscopic world. While static disorder is well understood in many cases, the impact of time-dependent disorder on quantum gases is still poorly investigated. In our experimental setup, we introduce and characterize a method capable of producing time-controlled optical-speckle disorder. Experimentally, coherent light illuminates a combination of a static and a rotating diffuser, thereby collecting a spatially varying phase due to the diffusers' structure and a temporally variable phase due to the relative rotation. Controlling the rotation of the diffuser allows changing the speckle realization or, for future work, the characteristic time scale of the change of the speckle pattern, i.e. the correlation time, matching typical time scales of the quantum gases investigated. We characterize the speckle pattern ex-situ by measuring its intensity distribution cross-correlating different intensity patterns. In-situ, we observe its impact on a molecular Bose-Einstein condensate (BEC) and cross-correlate the density distributions of BECs probed in different speckle realizations. As one diffuser rotates relative to the other around the common optical axis, we trace the optical speckle's intensity cross-correlations and the quantum gas' density cross-correlations. Our results show comparable outcomes for both measurement methods. The setup allows us to tune the disorder potential adapted to the characteristics of the quantum gas. These studies pave the way for investigating nonequilibrium physics in interacting quantum gases using controlled dynamical-disorder potentials.
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Submitted 25 January, 2024; v1 submitted 28 June, 2023;
originally announced June 2023.
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Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation
Authors:
Mustafa Bal,
Akshay A. Murthy,
Shaojiang Zhu,
Francesco Crisa,
Xinyuan You,
Ziwen Huang,
Tanay Roy,
Jaeyel Lee,
David van Zanten,
Roman Pilipenko,
Ivan Nekrashevich,
Andrei Lunin,
Daniel Bafia,
Yulia Krasnikova,
Cameron J. Kopas,
Ella O. Lachman,
Duncan Miller,
Josh Y. Mutus,
Matthew J. Reagor,
Hilal Cansizoglu,
Jayss Marshall,
David P. Pappas,
Kim Vu,
Kameshwar Yadavalli,
Jin-Su Oh
, et al. (15 additional authors not shown)
Abstract:
We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati…
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We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
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Submitted 24 January, 2024; v1 submitted 25 April, 2023;
originally announced April 2023.
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Gate control of superconducting current: Mechanisms, parameters and technological potential
Authors:
Leon Ruf,
Claudio Puglia,
Tosson Elalaily,
Giorgio De Simoni,
Francois Joint,
Martin Berke,
Jennifer Koch,
Andrea Iorio,
Sara Khorshidian,
Peter Makk,
Simone Gasparinetti,
Szabolcs Csonka,
Wolfgang Belzig,
Mario Cuoco,
Francesco Giazotto,
Elke Scheer,
Angelo Di Bernardo
Abstract:
In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superco…
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In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS effect, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS effect, and the material and device parameters that mostly affect it based on the evidence reported. We will come to the conclusion that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS effect can have towards high-performance computing with low-energy dissipation and quantum technologies.
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Submitted 7 October, 2024; v1 submitted 27 February, 2023;
originally announced February 2023.
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Nanoscale view of engineered massive Dirac quasiparticles in lithographic superstructures
Authors:
Alfred J. H. Jones,
Lene Gammelgaard,
Mikkel O. Sauer,
Deepnarayan Biswas,
Roland J. Koch,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Kenji Watanabe,
Takashi Taniguchi,
Cory R. Dean,
Antti-Pekka Jauho,
Peter Bøggild,
Thomas G. Pedersen,
Bjarke S. Jessen,
Søren Ulstrup
Abstract:
Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as topological phase transitions, anomalous Hall effects and superconductivity. This work demonstrates that massive Dirac fermions can be controllably induced by lithographically patterning superstructures of nanoscale hole…
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Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as topological phase transitions, anomalous Hall effects and superconductivity. This work demonstrates that massive Dirac fermions can be controllably induced by lithographically patterning superstructures of nanoscale holes in a graphene device. Their band dispersion is systematically visualized using angle-resolved photoemission spectroscopy with nanoscale spatial resolution. A linear scaling of effective mass with feature sizes is discovered, underlining the Dirac nature of the superstructures. In situ electrostatic doping dramatically enhances the effective hole mass and leads to the direct observation of an electronic band gap that results in a peak-to-peak band separation of (0.64 $\pm$ 0.03) eV, which is shown via first-principles calculations to be strongly renormalized by carrier-induced screening. The presented methodology outlines a new approach for band structure engineering guided by directly viewing structurally- and electrically-tunable massive Dirac quasiparticles in lithographic superstructures at the nanoscale.
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Submitted 17 December, 2022;
originally announced December 2022.
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Making statistics work: a quantum engine in the BEC-BCS crossover
Authors:
Jennifer Koch,
Keerthy Menon,
Eloisa Cuestas,
Sian Barbosa,
Eric Lutz,
Thomás Fogarty,
Thomas Busch,
Artur Widera
Abstract:
Heat engines convert thermal energy into mechanical work both in the classical and quantum regimes. However, quantum theory offers genuine nonclassical forms of energy, different from heat, which so far have not been exploited in cyclic engines to produce useful work. We here experimentally realize a novel quantum many-body engine fuelled by the energy difference between fermionic and bosonic ense…
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Heat engines convert thermal energy into mechanical work both in the classical and quantum regimes. However, quantum theory offers genuine nonclassical forms of energy, different from heat, which so far have not been exploited in cyclic engines to produce useful work. We here experimentally realize a novel quantum many-body engine fuelled by the energy difference between fermionic and bosonic ensembles of ultracold particles that follows from the Pauli exclusion principle. We employ a harmonically trapped superfluid gas of $^6$Li atoms close to a magnetic Feshbach resonance which allows us to effectively change the quantum statistics from Bose-Einstein to Fermi-Dirac. We replace the traditional heating and cooling strokes of a quantum Otto cycle by tuning the gas between a Bose- Einstein condensate of bosonic molecules and a unitary Fermi gas (and back) through a magnetic field. The quantum nature of such a Pauli engine is revealed by contrasting it to a classical thermal engine and to a purely interaction-driven device. We obtain a work output of several $10^6$ vibrational quanta per cycle with an efficiency of up to $25\%$. Our findings establish quantum statistics as a useful thermodynamic resource for work production, shifting the paradigm of energy-conversion devices to a new class of emergent quantum engines.
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Submitted 28 September, 2022;
originally announced September 2022.
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Role of Local Ru Hexamers in Superconductivity of Ruthenium Phosphide
Authors:
Robert J. Koch,
Niraj Aryal,
Oleh Ivashko,
Yu Liu,
Milinda Abeykoon,
Eric D. Bauer,
Martin v. Zimmermann,
Weiguo Yin,
Cedomir Petrovic,
Emil S. Bozin
Abstract:
Superconductivity in binary ruthenium pnictides occurs proximal to and upon suppression of a mysterious non-magnetic ground state, preceded by a pseudogap phase associated with Fermi surface instability, and its critical temperature, T$_{c}$, is maximized around the pseudogap quantum critical point. By analogy with isoelectronic iron based counterparts, antiferromagnetic fluctuations became "usual…
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Superconductivity in binary ruthenium pnictides occurs proximal to and upon suppression of a mysterious non-magnetic ground state, preceded by a pseudogap phase associated with Fermi surface instability, and its critical temperature, T$_{c}$, is maximized around the pseudogap quantum critical point. By analogy with isoelectronic iron based counterparts, antiferromagnetic fluctuations became "usual suspects" as putative mediators of superconducting pairing. Here we report on a high temperature local symmetry breaking in RuP, the parent of the maximum-Tc branch of these novel superconductors, revealed by combined nanostructure-sensitive powder and single crystal X-ray total scattering experiments. Large local Ru$_{6}$ hexamer distortions associated with orbital-charge trimerization form above the two-stage electronic transition in RuP. While hexamer ordering enables the nonmagnetic ground state and presumed complex oligomerization, the relevance of pseudogap fluctuations for superconductivity emerges as a distinct prospect. As a transition metal system in which partial d-manifold filling combined with high crystal symmetry promotes electronic instabilities, this represents a further example of local electronic precursors underpinning the macroscopic collective behavior of quantum materials.
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Submitted 19 August, 2022;
originally announced August 2022.
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Large-Area Intercalated 2D-Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque
Authors:
Alexander Vera,
Boyang Zheng,
Wilson Yanez,
Kaijie Yang,
Seong Yeoul Kim,
Xinglu Wang,
Jimmy C. Kotsakidis,
Hesham El-Sherif,
Gopi Krishnan,
Roland J. Koch,
T. Andrew Bowen,
Chengye Dong,
Yuanxi Wang,
Maxwell Wetherington,
Eli Rotenberg,
Nabil Bassim,
Adam L. Friedman,
Robert M. Wallace,
Chaoxing Liu,
Nitin Samarth,
Vincent H. Crespi,
Joshua A. Robinson
Abstract:
A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath bilayer graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal CHet-based Pb intercalation predominantly exhibit…
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A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath bilayer graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal CHet-based Pb intercalation predominantly exhibits a mottled hexagonal superstructure due to an ordered network of Frenkel-Kontorova-like domain walls. The system's air stability enables ex-situ spin torque ferromagnetic resonance (ST-FMR) measurements that demonstrate charge-to-spin conversion in graphene/Pb/ferromagnet heterostructures with a 1.5x increase in the effective field ratio compared to control samples.
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Submitted 20 August, 2024; v1 submitted 13 May, 2022;
originally announced May 2022.
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Strongly-overdoped La$_{2-x}$Sr$_x$CuO$_4$: Evidence for Josephson-coupled grains of strongly-correlated superconductor
Authors:
Yangmu Li,
A. Sapkota,
P. M. Lozano,
Zengyi Du,
Hui Li,
Zebin Wu,
Asish K. Kundu,
R. J. Koch,
Lijun Wu,
B. L. Winn,
Songxue Chi,
M. Matsuda,
M. Frontzek,
E. S. Bozin,
Yimei Zhu,
I. Bozovic,
Abhay N. Pasupathy,
Ilya K. Drozdov,
Kazuhiro Fujita,
G. D. Gu,
Igor Zaliznyak,
Qiang Li,
J. M. Tranquada
Abstract:
The interpretation of how superconductivity disappears in cuprates at large hole doping has been controversial. To address this issue, we present an experimental study of single-crystal and thin film samples of La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) with $x\ge0.25$. In particular, measurements of bulk susceptibility on LSCO crystals with $x=0.25$ indicate an onset of diamagnetism at $T_{c1}=38.5$ K, with…
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The interpretation of how superconductivity disappears in cuprates at large hole doping has been controversial. To address this issue, we present an experimental study of single-crystal and thin film samples of La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) with $x\ge0.25$. In particular, measurements of bulk susceptibility on LSCO crystals with $x=0.25$ indicate an onset of diamagnetism at $T_{c1}=38.5$ K, with a sharp transition to a phase with full bulk shielding at $T_{c2}=18$ K, independent of field direction. Strikingly, the in-plane resistivity only goes to zero at $T_{c2}$. Inelastic neutron scattering on $x=0.25$ crystals confirms the presence of low-energy incommensurate magnetic excitations with reduced strength compared to lower doping levels. The ratio of the spin gap to $T_{c2}$ is anomalously large. Our results are consistent with a theoretical prediction for strongly overdoped cuprates by Spivak, Oreto, and Kivelson, in which superconductivity initially develops within disconnected self-organized grains characterized by a reduced hole concentration, with bulk superconductivity occurring only after superconductivity is induced by proximity effect in the surrounding medium of higher hole concentration. Beyond the superconducting-to-metal transition, local differential conductance measurements on an LSCO thin film suggest that regions with pairing correlations survive, but are too dilute to support superconducting order. Future experiments will be needed to test the degree to which these results apply to overdoped cuprates in general.
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Submitted 21 December, 2022; v1 submitted 3 May, 2022;
originally announced May 2022.
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Visualizing band structure hybridization and superlattice effects in twisted MoS$_2$/WS$_2$ heterobilayers
Authors:
Alfred J. H. Jones,
Ryan Muzzio,
Sahar Pakdel,
Deepnarayan Biswas,
Davide Curcio,
Nicola Lanatà,
Philip Hofmann,
Kathleen M. McCreary,
Berend T. Jonker,
Kenji Watanabe,
Takashi Taniguchi,
Simranjeet Singh,
Roland J. Koch,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Jill A. Miwa,
Jyoti Katoch,
Søren Ulstrup
Abstract:
A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two dimensional van der Waals heterostructure produces a moiré superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band…
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A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two dimensional van der Waals heterostructure produces a moiré superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band structures, yet direct observation of the changes to the electronic structure introduced with varying twist angle has so far been missing. Here, we probe heterobilayers comprised of single-layer MoS$_2$ and WS$_2$ with twist angles of $(2.0 \pm 0.5)^{\circ}$, $(13.0 \pm 0.5)^{\circ}$, and $(20.0 \pm 0.5)^{\circ}$ and investigate the differences in their electronic band structure using micro-focused angle-resolved photoemission spectroscopy. We find strong interlayer hybridization between MoS$_2$ and WS$_2$ electronic states at the $\bar{\mathrmΓ}$-point of the Brillouin zone, leading to a transition from a direct bandgap in the single-layer to an indirect gap in the heterostructure. Replicas of the hybridized states are observed at the centre of twist angle-dependent moiré mini Brillouin zones. We confirm that these replica features arise from the inherent moiré potential by comparing our experimental observations with density functional theory calculations of the superlattice dispersion. Our direct visualization of these features underscores the potential of using twisted heterobilayer semiconductors to engineer hybrid electronic states and superlattices that alter the electronic and optical properties of 2D heterostructures.
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Submitted 1 June, 2021;
originally announced June 2021.
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Tunable Two-Dimensional Group-III Metal Alloys
Authors:
Siavash Rajabpour,
Alexander Vera,
Wen He,
Benjamin N. Katz,
Roland J. Koch,
Margaux Lassaunière,
Xuegang Chen,
Cequn Li,
Katharina Nisi,
Hesham El-Sherif,
Maxwell T. Wetherington,
Chengye Dong,
Aaron Bostwick,
Chris Jozwiak,
Adri C. T. van Duin,
Nabil Bassim,
Jun Zhu,
Gwo-Ching Wang,
Ursula Wurstbauer,
Eli Rotenberg,
Vincent Crespi,
Su Ying Quek,
Joshua A. Robinson
Abstract:
Chemically stable quantum-confined 2D metals are of interest in next-generation nanoscale quantum devices. Bottom-up design and synthesis of such metals could enable the creation of materials with tailored, on-demand, electronic and optical properties for applications that utilize tunable plasmonic coupling, optical non-linearity, epsilon-near-zero behavior, or wavelength-specific light trapping.…
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Chemically stable quantum-confined 2D metals are of interest in next-generation nanoscale quantum devices. Bottom-up design and synthesis of such metals could enable the creation of materials with tailored, on-demand, electronic and optical properties for applications that utilize tunable plasmonic coupling, optical non-linearity, epsilon-near-zero behavior, or wavelength-specific light trapping. In this work, we demonstrate that the electronic, superconducting and optical properties of air-stable two-dimensional metals can be controllably tuned by the formation of alloys. Environmentally robust large-area two-dimensional InxGa1-x alloys are synthesized by Confinement Heteroepitaxy (CHet). Near-complete solid solubility is achieved with no evidence of phase segregation, and the composition is tunable over the full range of x by changing the relative elemental composition of the precursor. The optical and electronic properties directly correlate with alloy composition, wherein the dielectric function, band structure, superconductivity, and charge transfer from the metal to graphene are all controlled by the indium/gallium ratio in the 2D metal layer.
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Submitted 31 May, 2021;
originally announced June 2021.
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On single crystal total scattering data reduction and correction protocols for analysis in direct space
Authors:
Robert J. Koch,
Nikolaj Roth,
Yiu Liu,
Oleh Ivashko,
Ann-Christin Dippel,
Cedomir Petrovic,
Bo B. Iversen,
Martin v. Zimmermann,
Emil S. Bozin
Abstract:
We explore data reduction and correction steps and processed data reproducibility in the emerging single crystal total scattering based technique of three-dimensional differential atomic pair distribution function (3D-$Δ$PDF) analysis. All steps from sample measurement to data-processing are outlined in detail using a CuIr$_2$S$_4$ example crystal studied in a setup equipped with a high-energy x-r…
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We explore data reduction and correction steps and processed data reproducibility in the emerging single crystal total scattering based technique of three-dimensional differential atomic pair distribution function (3D-$Δ$PDF) analysis. All steps from sample measurement to data-processing are outlined in detail using a CuIr$_2$S$_4$ example crystal studied in a setup equipped with a high-energy x-ray beam and a flat panel area detector. Computational overhead as it pertains to data-sampling and the associated data processing steps is also discussed. Various aspects of the final 3D-$Δ$PDF reproducibility are explicitly tested by varying data-processing order and included steps, and by carrying out a crystal-to-crystal data comparison. We identify situations in which the 3D-$Δ$PDF is robust, and caution against a few particular cases which can lead to inconsistent 3D-$Δ$PDFs. Although not all the approaches applied here-in will be valid across all systems, and a more in-depth analysis of some of the effects of the data processing steps may still needed, the methods collected here-in represent the start of a more systematic discussion about data processing and corrections in this field.
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Submitted 20 July, 2021; v1 submitted 14 May, 2021;
originally announced May 2021.
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Correlation-Driven Electron-Hole Asymmetry in Graphene Field Effect Devices
Authors:
Nicholas Dale,
Ryo Mori,
M. Iqbal Bakti Utama,
Jonathan D. Denlinger,
Conrad Stansbury,
Claudia G. Fatuzzo,
Sihan Zhao,
Kyunghoon Lee,
Takashi Taniguchi,
Kenji Watanabe,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Roland J. Koch,
Feng Wang,
Alessandra Lanzara
Abstract:
Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in the phase diagram of bilayer graphene has spurred interest into whether it stems from disorder or from fundamental interactions such as correlations. Here, we report an…
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Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in the phase diagram of bilayer graphene has spurred interest into whether it stems from disorder or from fundamental interactions such as correlations. Here, we report an effective new way to access electron-hole asymmetry in 2D materials by directly measuring the quasiparticle self-energy in graphene/Boron Nitride field effect devices. As the chemical potential moves from the hole to the electron doped side, we see an increased strength of electronic correlations manifested by an increase in the band velocity and inverse quasiparticle lifetime. These results suggest that electronic correlations play an intrinsic role in driving electron hole asymmetry in graphene and provide a new insight for asymmetries in more strongly correlated materials.
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Submitted 14 March, 2021;
originally announced March 2021.
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Elastocaloric effect in amorphous polymer networks undergoing mechanotropic phase transitions
Authors:
Jeremy A. Koch,
Jeremy A. Herman,
Timothy J. White
Abstract:
Deformations of amorphous polymer networks prepared with significant concentrations of liquid crystalline mesogens have been recently reported to undergo mechanotropic phase transitions. Here, we report that these mechanotropic phase transitions are accompanied by an elastocaloric response ($ΔT = 2.9 \text{ K}$). Applied uniaxial strain to the elastomeric polymer network transitions the organizati…
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Deformations of amorphous polymer networks prepared with significant concentrations of liquid crystalline mesogens have been recently reported to undergo mechanotropic phase transitions. Here, we report that these mechanotropic phase transitions are accompanied by an elastocaloric response ($ΔT = 2.9 \text{ K}$). Applied uniaxial strain to the elastomeric polymer network transitions the organization of the material from a disordered, amorphous state (order parameter $Q=0$) to the nematic phase ($Q=0.47$). Both the magnitude of the elastocaloric temperature change and mechanically induced order parameter are dependent on the concentration of liquid crystal mesogens in the material. While the observed temperature changes in these materials are smaller than those observed in shape memory alloys, the responsivity, defined as the temperature change divided by the input stress, is larger by an order of magnitude.
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Submitted 3 March, 2021;
originally announced March 2021.
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Dual Orbital Degeneracy Lifting in a Strongly Correlated Electron System
Authors:
R. J. Koch,
R. Sinclair,
M. T. McDonnell,
R. Yu,
M. Abeykoon,
M. G. Tucker,
A. M. Tsvelik,
S. J. L. Billinge,
H. D. Zhou,
W. -G. Yin,
E. S. Bozin
Abstract:
The local structure of NaTiSi$_{2}$O$_{6}$ is examined across its Ti-dimerization orbital-assisted Peierls transition at 210 K. An atomic pair distribution function approach evidences local symmetry breaking preexisting far above the transition. The analysis unravels that on warming the dimers evolve into a short range orbital degeneracy lifted (ODL) state of dual orbital character, persisting up…
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The local structure of NaTiSi$_{2}$O$_{6}$ is examined across its Ti-dimerization orbital-assisted Peierls transition at 210 K. An atomic pair distribution function approach evidences local symmetry breaking preexisting far above the transition. The analysis unravels that on warming the dimers evolve into a short range orbital degeneracy lifted (ODL) state of dual orbital character, persisting up to at least 490 K. The ODL state is correlated over the length scale spanning $\sim$6 sites of the Ti zigzag chains. Results imply that the ODL phenomenology extends to strongly correlated electron systems.
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Submitted 29 September, 2020;
originally announced September 2020.
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Two-orbital degeneracy lifted state as a local precursor to a metal-insulator transition
Authors:
Long Yang,
Robert J. Koch,
Hong Zheng,
J. F. Mitchell,
Weiguo Yin,
Matthew G. Tucker,
Simon J. L. Billinge,
Emil S. Bozin
Abstract:
The recent discovery of a local fluctuating t2g orbital-degeneracy-lifted (ODL) state in CuIr2S4 as a high temperature precursor to the metal-insulator transition (MIT) opens the door to a possible widespread presence of precursor states in scarcely studied high-temperature regimes of transition metal based quantum materials. Although in CuIr2S4 the ODL state comprises one orbital per Ir, there is…
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The recent discovery of a local fluctuating t2g orbital-degeneracy-lifted (ODL) state in CuIr2S4 as a high temperature precursor to the metal-insulator transition (MIT) opens the door to a possible widespread presence of precursor states in scarcely studied high-temperature regimes of transition metal based quantum materials. Although in CuIr2S4 the ODL state comprises one orbital per Ir, there is no fundamental reason to exclude multi-orbital ODL states in general. The MgTi2O4 spinel exhibits a MIT on cooling at Ts ~250 K, accompanied by Ti t2g orbital ordering (OO) and spin dimerization with the average symmetry reducing to tetragonal. It shares with CuIr2S4 the pyrochlore transition metal sublattice with active t2g orbitals. This, together with its different orbital filling (t2g1 vs t2g5.5) make it a candidate for hosting a multi-orbital ODL precursor state. By combining x-ray and neutron pair distribution function analyses to track the evolution of the local atomic structure across the MIT we find that local tetragonality already exists in the metallic globally cubic phase at high temperature. Local distortions exist up to at least 500 K. Significantly, the high temperature local state is not continuously connected to the OO band insulator ground state, and so the transition cannot be characterized as a trivial order-disorder type. The shortest Ti-Ti spin singlet dimer bonds expand abruptly on warming across the transition but remain shorter than those seen in the cubic structure. These seemingly contradictory observations can be understood within the model of a local fluctuating two-orbital t2g ODL precursor state. The ODL state in MgTi2O4 has a correlation length of about 1 nm at high temperature. We discuss that this extended character of the local distortions is consistent with the two-orbital nature of the ODL state imposed by the charge filling and the bond charge repulsion.
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Submitted 18 September, 2020;
originally announced September 2020.
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Floquet-engineered enhancement of coherence times in a driven fluxonium qubit
Authors:
Pranav S. Mundada,
András Gyenis,
Ziwen Huang,
Jens Koch,
Andrew A. Houck
Abstract:
We use the quasienergy structure that emerges when a fluxonium superconducting circuit is driven periodically to encode quantum information with dynamically induced flux-insensitive sweet spots. The framework of Floquet theory provides an intuitive description of these high-coherence working points located away from the half-flux symmetry point of the undriven qubit. This approach offers flexibili…
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We use the quasienergy structure that emerges when a fluxonium superconducting circuit is driven periodically to encode quantum information with dynamically induced flux-insensitive sweet spots. The framework of Floquet theory provides an intuitive description of these high-coherence working points located away from the half-flux symmetry point of the undriven qubit. This approach offers flexibility in choosing the flux bias point and the energy of the logical qubit states as shown in [\textit{Huang et al., 2020}]. We characterize the response of the system to noise in the modulation amplitude and DC flux bias, and experimentally demonstrate an optimal working point which is simultaneously insensitive against fluctuations in both. We observe a 40-fold enhancement of the qubit coherence times measured with Ramsey-type interferometry at the dynamical sweet spot compared with static operation at the same bias point.
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Submitted 27 July, 2020;
originally announced July 2020.
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Ultracold Bose gases in disorder potentials with spatiotemporal dynamics
Authors:
Benjamin Nagler,
Martin Will,
Silvia Hiebel,
Sian Barbosa,
Jennifer Koch,
Michael Fleischhauer,
Artur Widera
Abstract:
We study experimentally the dissipative dynamics of ultracold bosonic gases in a dynamic disorder potential with tunable correlation time. First, we measure the heating rate of thermal clouds exposed to the dynamic potential and present a model of the heating process, revealing the microscopic origin of dissipation from a thermal, trapped cloud of bosons. Second, for Bose-Einstein condensates, we…
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We study experimentally the dissipative dynamics of ultracold bosonic gases in a dynamic disorder potential with tunable correlation time. First, we measure the heating rate of thermal clouds exposed to the dynamic potential and present a model of the heating process, revealing the microscopic origin of dissipation from a thermal, trapped cloud of bosons. Second, for Bose-Einstein condensates, we measure the particle loss rate induced by the dynamic environment. Depending on the correlation time, the losses are either dominated by heating of residual thermal particles or the creation of excitations in the superfluid, a notion we substantiate with a rate model. Our results illuminate the interplay between superfluidity and time-dependent disorder and on more general grounds establish ultracold atoms as a platform for studying spatiotemporal noise and time-dependent disorder.
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Submitted 24 February, 2022; v1 submitted 22 July, 2020;
originally announced July 2020.
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Three-dimensional Ising Ferrimagnetism of Cr-Fe-Cr trimers in FeCr2Te4
Authors:
Yu Liu,
R. J. Koch,
Zhixiang Hu,
Niraj Aryal,
Eli Stavitski,
Xiao Tong,
Klaus Attenkofer,
E. S. Bozin,
Weiguo Yin,
C. Petrovic
Abstract:
We carried out a comprehensive study of magnetic critical behavior in single crystals of ternary chalcogenide FeCr$_2$Te$_4$ that undergoes a ferrimagnetic transition below $T_c$ $\sim$ 123 K. Detailed critical behavior analysis and scaled magnetic entropy change indicate a second-order ferrimagentic transition. Critical exponents $β= 0.30(1)$ with $T_c = 122.4(5)$ K, $γ= 1.22(1)$ with…
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We carried out a comprehensive study of magnetic critical behavior in single crystals of ternary chalcogenide FeCr$_2$Te$_4$ that undergoes a ferrimagnetic transition below $T_c$ $\sim$ 123 K. Detailed critical behavior analysis and scaled magnetic entropy change indicate a second-order ferrimagentic transition. Critical exponents $β= 0.30(1)$ with $T_c = 122.4(5)$ K, $γ= 1.22(1)$ with $T_c = 122.8(1)$ K, and $δ= 4.24(2)$ at $T_c$ $\sim$ 123 K suggest that the spins approach three-dimensional Ising ($β$ = 0.325, $γ$ = 1.24, and $δ$ = 4.82) model coupled with the attractive long-range interactions between spins that decay as $J(r)\approx r^{-4.88}$. Our results suggest that the ferrimagnetism in FeCr$_2$Te$_4$ is due to itinerant ferromagnetism among the antiferromagnetically coupled Cr-Fe-Cr trimers.
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Submitted 18 August, 2020; v1 submitted 14 July, 2020;
originally announced July 2020.
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Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions
Authors:
Shruti Subramanian,
Quinn T. Campbell,
Simon Moser,
Jonas Kiemle,
Philipp Zimmermann,
Paul Seifert,
Florian Sigger,
Deeksha Sharma,
Hala Al-Sadeg,
Michael Labella III,
Dacen Waters,
Randall M. Feenstra,
Roland J. Koch,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Ismaila Dabo,
Alexander Holleitner,
Thomas E. Beechem,
Ursula Wurstbauer,
Joshua A. Robinson
Abstract:
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x large…
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Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.
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Submitted 25 June, 2020;
originally announced June 2020.
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How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain
Authors:
Bruno Schuler,
Jun-Ho Lee,
Christoph Kastl,
Katherine A. Cochrane,
Christopher T. Chen,
Sivan Refaely-Abramson,
Shengjun Yuan,
Edo van Veen,
Rafael Roldán,
Nicholas J. Borys,
Roland J. Koch,
Shaul Aloni,
Adam M. Schwartzberg,
D. Frank Ogletree,
Jeffrey B. Neaton,
Alexander Weber-Bargioni
Abstract:
Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided in…
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Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step towards impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS$_2$) grown by chemical vapor deposition (CVD) using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (Cr$_{\text{W}}$) and molybdenum (Mo$_{\text{W}}$) at a tungsten site, oxygen at sulfur sites in both bottom and top layers (O$_{\text{S}}$ top/bottom), as well as two negatively charged defects (CDs). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS$_2$ as reported here will guide future efforts of targeted defect engineering and doping of TMDs.
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Submitted 15 May, 2020;
originally announced May 2020.
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Universal fast flux control of a coherent, low-frequency qubit
Authors:
Helin Zhang,
Srivatsan Chakram,
Tanay Roy,
Nathan Earnest,
Yao Lu,
Ziwen Huang,
Daniel Weiss,
Jens Koch,
David I. Schuster
Abstract:
The \textit{heavy-fluxonium} circuit is a promising building block for superconducting quantum processors due to its long relaxation and dephasing time at the half-flux frustration point. However, the suppressed charge matrix elements and low transition frequency have made it challenging to perform fast single-qubit gates using standard protocols. We report on new protocols for reset, fast coheren…
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The \textit{heavy-fluxonium} circuit is a promising building block for superconducting quantum processors due to its long relaxation and dephasing time at the half-flux frustration point. However, the suppressed charge matrix elements and low transition frequency have made it challenging to perform fast single-qubit gates using standard protocols. We report on new protocols for reset, fast coherent control, and readout, that allow high-quality operation of the qubit with a 14 MHz transition frequency, an order of magnitude lower in energy than the ambient thermal energy scale. We utilize higher levels of the fluxonium to initialize the qubit with $97$\% fidelity, corresponding to cooling it to $190~\mathrm{μK}$. We realize high-fidelity control using a universal set of single-cycle flux gates, which are comprised of directly synthesizable fast pulses, while plasmon-assisted readout is used for measurements. On a qubit with $T_1, T_{2e}\sim$~300~$\mathrm{μs}$, we realize single-qubit gates in $20-60$~ns with an average gate fidelity of $99.8\%$ as characterized by randomized benchmarking.
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Submitted 24 February, 2020;
originally announced February 2020.
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Charge density waves in cuprate superconductors beyond the critical doping
Authors:
H. Miao,
G. Fabbris,
R. J. Koch,
D. G. Mazzone,
C. S. Nelson,
R. Acevedo-Esteves,
Y. Li,
G. D. Gu,
T. Yilmaz,
K. Kaznatcheev,
E. Vescovo,
M. Oda,
K. Kurosawa,
N. Momono,
T. A. Assefa,
I. K. Robinson,
E. Bozin,
J. M. Tranquada,
P. D. Johnson,
M. P. M. Dean
Abstract:
The unconventional normal-state properties of the cuprates are often discussed in terms of emergent electronic order that onsets below a putative critical doping of xc = 0.19. Charge-density wave (CDW) correlations represent one such order; however, experimental evidence for such order generally spans a limited range of doping that falls short of the critical value xc, leading to questions regardi…
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The unconventional normal-state properties of the cuprates are often discussed in terms of emergent electronic order that onsets below a putative critical doping of xc = 0.19. Charge-density wave (CDW) correlations represent one such order; however, experimental evidence for such order generally spans a limited range of doping that falls short of the critical value xc, leading to questions regarding its essential relevance. Here, we use x-ray diffraction to demonstrate that CDW correlations in La2-xSrxCuO4 persist up to a doping of at least x = 0.21. The correlations show strong changes through the superconducting transition, but no obvious discontinuity through xc = 0.19, despite changes in Fermi surface topology and electronic transport at this doping. These results demonstrate the interaction between CDWs and superconductivity even in overdoped cuprates and prompt a reconsideration of the role of CDW correlations in the high-temperature cuprate phase diagram.
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Submitted 20 February, 2021; v1 submitted 28 January, 2020;
originally announced January 2020.
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Momentum-resolved view of highly tunable many-body effects in a graphene/hBN field-effect device
Authors:
Ryan Muzzio,
Alfred J. H. Jones,
Davide Curcio,
Deepnarayan Biswas,
Jill A. Miwa,
Philip Hofmann,
Kenji Watanabe,
Takashi Taniguchi,
Simranjeet Singh,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Roland J. Koch,
Søren Ulstrup,
Jyoti Katoch
Abstract:
Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supporte…
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Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supported on hexagonal boron nitride. By extracting the doping-dependent quasiparticle dispersion and self-energy, we observe how these interactions renormalize the Dirac cone and impact the electron mobility of our device. Our results are not only limited to a finite energy range around the Fermi level, as in electron transport measurements, but describe interactions on a much wider energy scale, extending beyond the regime of hot carrier excitations.
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Submitted 28 May, 2020; v1 submitted 10 January, 2020;
originally announced January 2020.
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Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist
Authors:
M. Iqbal Bakti Utama,
Roland J. Koch,
Kyunghoon Lee,
Nicolas Leconte,
Hongyuan Li,
Sihan Zhao,
Lili Jiang,
Jiayi Zhu,
Kenji Watanabe,
Takashi Taniguchi,
Paul D. Ashby,
Alexander Weber-Bargioni,
Alex Zettl,
Chris Jozwiak,
Jeil Jung,
Eli Rotenberg,
Aaron Bostwick,
Feng Wang
Abstract:
Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bilayer graphene (tBLG) with the first magic angle twist was reported to exhibit correlated insulating state and superconductivity, where the presence of the flat miniband in the system is thought to be essential for the e…
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Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bilayer graphene (tBLG) with the first magic angle twist was reported to exhibit correlated insulating state and superconductivity, where the presence of the flat miniband in the system is thought to be essential for the emergence of these ordered phases in the transport measurements. Tunneling spectroscopy and electronic compressibility measurements in tBLG have revealed a van Hove singularity that is consistent with the presence of the flat miniband. However, a direct observation of the flat dispersion in the momentum-space of such moire miniband in tBLG is still elusive. Here, we report the visualization of the flat moire miniband by using angle-resolved photoemission spectroscopy with nanoscale resolution (nanoARPES). The high spatial resolution in nanoARPES enabled the measurement of the local electronic structure of the tBLG. We clearly demonstrate the existence of the flat moire band near the charge neutrality for tBLG close to the magic angle at room temperature.
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Submitted 2 December, 2019;
originally announced December 2019.
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Dipole oscillations of fermionic superfluids along the BEC-BCS crossover in disordered potentials
Authors:
Benjamin Nagler,
Kevin Jägering,
Ameneh Sheikhan,
Sian Barbosa,
Jennifer Koch,
Sebastian Eggert,
Imke Schneider,
Artur Widera
Abstract:
We investigate dipole oscillations of ultracold Fermi gases along the BEC-BCS crossover through disordered potentials. We observe a disorder-induced damping of oscillations as well as a change of the fundamental Kohn-mode frequency. The measurement results are compared to numerical density matrix renormalization group calculations as well as to a three-dimensional simulation of non-interacting fer…
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We investigate dipole oscillations of ultracold Fermi gases along the BEC-BCS crossover through disordered potentials. We observe a disorder-induced damping of oscillations as well as a change of the fundamental Kohn-mode frequency. The measurement results are compared to numerical density matrix renormalization group calculations as well as to a three-dimensional simulation of non-interacting fermions. Experimentally, we find a disorder-dependent damping, which grows approximately with the second power of the disorder strength. Moreover, we observe experimentally a change of oscillation frequency which deviates from the expected behavior of a damped harmonic oscillator on a percent level. While this behavior is qualitatively expected from the theoretical models used, quantitatively the experimental observations show a significantly stronger effect than predicted by theory. Furthermore, while the frequency shift seems to scale differently with interaction strength in the BEC versus BCS regime, the damping coefficient apparently decreases with the strength of interaction, but not with the sign, which changes for BEC and BCS type Fermi gases. This is surprising, as the dominant damping mechanisms are expected to be different in the two regimes.
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Submitted 13 November, 2019;
originally announced November 2019.
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Observing the loss and revival of long-range phase coherence through disorder quenches
Authors:
Benjamin Nagler,
Sian Barbosa,
Jennifer Koch,
Giuliano Orso,
Artur Widera
Abstract:
Relaxation of quantum systems is a central problem in nonequilibrium physics. In contrast to classical systems, the underlying quantum dynamics results not only from atomic interactions but also from the long-range coherence of the many-body wave function. Experimentally, nonequilibrium states of quantum fluids are usually created using moving objects or laser potentials, directly perturbing and d…
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Relaxation of quantum systems is a central problem in nonequilibrium physics. In contrast to classical systems, the underlying quantum dynamics results not only from atomic interactions but also from the long-range coherence of the many-body wave function. Experimentally, nonequilibrium states of quantum fluids are usually created using moving objects or laser potentials, directly perturbing and detecting the system's density. However the fate of long-range phase coherence for hydrodynamic motion of disordered quantum systems is less explored, especially in three dimension. Here, we unravel how the density and phase coherence of a Bose-Einstein condensate of $^6$Li$_2$ molecules respond upon quenching on or off an optical speckle potential. We find that, as the disorder is switched on, long-range phase coherence breaks down one order of magnitude faster than the density of the quantum gas responds. After removing it, the system needs two orders of magnitude longer times to reestablish quantum coherence, compared to the density response. We compare our results with numerical simulations of the Gross-Pitaevskii equation on large three-dimensional grids, finding an overall good agreement. Our results shed light on the importance of long-range coherence and possibly long-lived phase excitations for the relaxation of nonequilibrium quantum many-body systems.
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Submitted 22 November, 2021; v1 submitted 12 November, 2019;
originally announced November 2019.
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Cloud shape of a molecular Bose-Einstein condensate in a disordered trap: a case study of the dirty boson problem
Authors:
Benjamin Nagler,
Milan Radonjić,
Sian Barbosa,
Jennifer Koch,
Axel Pelster,
Artur Widera
Abstract:
We investigate, both experimentally and theoretically, the static geometric properties of a harmonically trapped Bose-Einstein condensate of ${}^6$Li$_2$ molecules in laser speckle potentials. Experimentally, we measure the in-situ column density profiles and the corresponding transverse cloud widths over many laser speckle realizations. We compare the measured widths with a theory that is non-per…
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We investigate, both experimentally and theoretically, the static geometric properties of a harmonically trapped Bose-Einstein condensate of ${}^6$Li$_2$ molecules in laser speckle potentials. Experimentally, we measure the in-situ column density profiles and the corresponding transverse cloud widths over many laser speckle realizations. We compare the measured widths with a theory that is non-perturbative with respect to the disorder and includes quantum fluctuations. Importantly, for small disorder strengths we find quantitative agreement with the perturbative approach of Huang and Meng, which is based on Bogoliubov theory. For strong disorder our theory perfectly reproduces the geometric mean of the measured transverse widths. However, we also observe a systematic deviation of the individual measured widths from the theoretically predicted ones. In fact, the measured cloud aspect ratio monotonously decreases with increasing disorder strength, while the theory yields a constant ratio. We attribute this discrepancy to the utilized local density approximation, whose possible failure for strong disorder suggests a potential future improvement.
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Submitted 25 March, 2020; v1 submitted 6 November, 2019;
originally announced November 2019.
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Experimental realization of an intrinsically error-protected superconducting qubit
Authors:
Andras Gyenis,
Pranav S. Mundada,
Agustin Di Paolo,
Thomas M. Hazard,
Xinyuan You,
David I. Schuster,
Jens Koch,
Alexandre Blais,
Andrew A. Houck
Abstract:
Encoding a qubit in logical quantum states with wavefunctions characterized by disjoint support and robust energies can offer simultaneous protection against relaxation and pure dephasing. Using a circuit-quantum-electrodynamics architecture, we experimentally realize a superconducting $0-π$ qubit, which hosts protected states suitable for quantum-information processing. Multi-tone spectroscopy me…
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Encoding a qubit in logical quantum states with wavefunctions characterized by disjoint support and robust energies can offer simultaneous protection against relaxation and pure dephasing. Using a circuit-quantum-electrodynamics architecture, we experimentally realize a superconducting $0-π$ qubit, which hosts protected states suitable for quantum-information processing. Multi-tone spectroscopy measurements reveal the energy level structure of the system, which can be precisely described by a simple two-mode Hamiltonian. We find that the parity symmetry of the qubit results in charge-insensitive levels connecting the protected states, allowing for logical operations. The measured relaxation (1.6 ms) and dephasing times (25 $μ$s) demonstrate that our implementation of the $0-π$ circuit not only broadens the family of superconducting qubits, but also represents a promising candidate for the building block of a fault-tolerant quantum processor.
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Submitted 16 October, 2019;
originally announced October 2019.
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Universal gates for protected superconducting qubits using optimal control
Authors:
Mohamed Abdelhafez,
Brian Baker,
Andras Gyenis,
Pranav Mundada,
Andrew A. Houck,
David Schuster,
Jens Koch
Abstract:
We employ quantum optimal control theory to realize quantum gates for two protected superconducting circuits: the heavy-fluxonium qubit and the 0-$π$ qubit. Utilizing automatic differentiation facilitates the simultaneous inclusion of multiple optimization targets, allowing one to obtain high-fidelity gates with realistic pulse shapes. For both qubits, disjoint support of low-lying wave functions…
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We employ quantum optimal control theory to realize quantum gates for two protected superconducting circuits: the heavy-fluxonium qubit and the 0-$π$ qubit. Utilizing automatic differentiation facilitates the simultaneous inclusion of multiple optimization targets, allowing one to obtain high-fidelity gates with realistic pulse shapes. For both qubits, disjoint support of low-lying wave functions prevents direct population transfer between the computational-basis states. Instead, optimal control favors dynamics involving higher-lying levels, effectively lifting the protection for a fraction of the gate duration. For the 0-$π$ qubit, offset-charge dependence of matrix elements among higher levels poses an additional challenge for gate protocols. To mitigate this issue, we randomize the offset charge during the optimization process, steering the system towards pulse shapes insensitive to charge variations. Closed-system fidelities obtained are 99% or higher, and show slight reductions in open-system simulations.
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Submitted 20 August, 2019;
originally announced August 2019.
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Spectrum and Coherence Properties of the Current-Mirror Qubit
Authors:
D. K. Weiss,
Andy C. Y. Li,
D. G. Ferguson,
Jens Koch
Abstract:
The current-mirror circuit [A. Kitaev, arXiv:cond-mat/0609441 (2006)] exhibits a robust ground-state degeneracy and wave functions with disjoint support for appropriate circuit parameters. In this protected regime, Cooper-pair excitons form the relevant low-energy excitations. Based on a full circuit analysis of the current-mirror device, we introduce an effective model that systematically capture…
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The current-mirror circuit [A. Kitaev, arXiv:cond-mat/0609441 (2006)] exhibits a robust ground-state degeneracy and wave functions with disjoint support for appropriate circuit parameters. In this protected regime, Cooper-pair excitons form the relevant low-energy excitations. Based on a full circuit analysis of the current-mirror device, we introduce an effective model that systematically captures the relevant low-energy degrees of freedom, and is amenable to diagonalization using Density Matrix Renormalization Group (DMRG) methods. We find excellent agreement between DMRG and exact diagonalization, and can push DMRG simulations to much larger circuit sizes than feasible for exact diagonalization. We discuss the spectral properties of the current-mirror circuit, and predict coherence times exceeding 1 ms in parameter regimes believed to be within reach of experiments.
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Submitted 3 September, 2019; v1 submitted 13 August, 2019;
originally announced August 2019.
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The Dirac nodal line network in non-symmorphic rutile semimetal RuO$_2$
Authors:
Vedran Jovic,
Roland J. Koch,
Swarup K. Panda,
Helmuth Berger,
Philippe Bugnon,
Arnaud Magrez,
Ronny Thomale,
Kevin E. Smith,
Silke Biermann,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Domenico Di Sante,
Simon Moser
Abstract:
We employ angle resolved photoemission spectroscopy (ARPES) to investigate the Fermi surface of RuO$_2$. We find a network of two Dirac nodal lines (DNL) as previously predicted in theory, where the valence- and conduction bands touch along continuous lines in momentum space. In addition, we find evidence for a third DNL close to the Fermi level which appears robust despite the presence of signifi…
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We employ angle resolved photoemission spectroscopy (ARPES) to investigate the Fermi surface of RuO$_2$. We find a network of two Dirac nodal lines (DNL) as previously predicted in theory, where the valence- and conduction bands touch along continuous lines in momentum space. In addition, we find evidence for a third DNL close to the Fermi level which appears robust despite the presence of significant spin orbit coupling. We demonstrate that the third DNL gives rise to a topologically trivial flat-band surface state (FBSS) at the (110) surface. This FBSS can be tuned by surface doping and presents an interesting playground for the study of surface chemistry and exotic correlation phenomena.
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Submitted 6 August, 2019;
originally announced August 2019.
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Tunable Electronic Structure in Gallium Chalcogenide van der Waals Compounds
Authors:
Brian Shevitski,
Søren Ulstrup,
Roland J. Koch,
Hui Cai,
Sefaattin Tongay,
Luca Moreschini,
Chris Jozwiak,
Aaron Bostwick,
Alex Zettl,
Eli Rotenberg,
Shaul Aloni
Abstract:
Transition metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition. Here, we explore the tunability of the electronic excitation spectrum in GaSe using angle-resolved photoemission spectroscopy. The electronic structure of the material is modified by $\textit{in-situ}$ potassium deposit…
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Transition metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition. Here, we explore the tunability of the electronic excitation spectrum in GaSe using angle-resolved photoemission spectroscopy. The electronic structure of the material is modified by $\textit{in-situ}$ potassium deposition as well as by forming GaS$_{x}$Se$_{1-x}$ alloy compounds. We find that potassium decouples the top-most tetra-layer of the GaSe unit cell, leading to a substantial change of the dispersion around the valence band maximum (VBM). The observed band dispersion of a single tetralayer is consistent with a transition from the direct gap character of the bulk to the indirect gap character expected for monolayer GaSe. Upon alloying with sulfur, we observe a phase transition from AB to $\text{AA}^{\prime}$ stacking. Alloying also results in a rigid energy shift of the VBM towards higher binding energies which correlates with a blue shift in the luminescence. The increase of the band gap upon sulfur alloying does not appear to change the dispersion or character of the VBM appreciably, implying that it is possible to engineer the gap of these materials while maintaining their salient electronic properties.
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Submitted 19 September, 2019; v1 submitted 2 August, 2019;
originally announced August 2019.
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Rigid band shifts in two-dimensional semiconductors through environmental screening
Authors:
Lutz Waldecker,
Archana Raja,
Malte Rösner,
Christina Steinke,
Aaron Bostwick,
Roland J. Koch,
Chris Jozwiak,
Takashi Taniguchi,
Kenji Watanabe,
Eli Rotenberg,
Tim O. Wehling,
Tony F. Heinz
Abstract:
We investigate the effects of environmental dielectric screening on the electronic dispersion and the band gap in the atomically-thin, quasi two-dimensional (2D) semiconductor WS$_2$ using correlative angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased environmental screening to be a reduction of the band gap, with…
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We investigate the effects of environmental dielectric screening on the electronic dispersion and the band gap in the atomically-thin, quasi two-dimensional (2D) semiconductor WS$_2$ using correlative angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased environmental screening to be a reduction of the band gap, with little change to the electronic dispersion of the band structure. These essentially rigid shifts of the bands results from the special spatial structure of the changes in the Coulomb potential induced by the dielectric environment in the 2D limit. Our results suggest dielectric engineering as a non-invasive method of tailoring the band structure of 2D semiconductors and provide guidance for understanding the electronic properties of 2D materials embedded in multilayer heterostructures.
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Submitted 11 July, 2019;
originally announced July 2019.
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Confinement Heteroepitaxy: Realizing Atomically Thin, Half-van der Waals Materials
Authors:
Natalie Briggs,
Brian Bersch,
Yuanxi Wang,
Nadire Nayir,
Roland J. Koch,
Ke Wang,
Marek Kolmer,
Wonhee Ko,
Ana De La Fuente Duran,
Shruti Subramanian,
Chengye Dong,
Jeffrey Shallenberger,
Aaron Bostwick,
Chris Jozwiak,
Eli Rotenberg,
An-Ping Li,
Adri C. T. van Duin,
Vincent Crespi,
Joshua Robinson
Abstract:
Three-dimensional epitaxial heterostructures are based on covalently-bonded interfaces, whereas those from 2-dimensional (2D) materials exhibit van der Waals interactions. Under the right conditions, however, material structures with mixed interfacial van der Waals and covalent bonding may be realized. Atomically thin layers formed at the epitaxial graphene (EG)/silicon carbide (SiC) interface ind…
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Three-dimensional epitaxial heterostructures are based on covalently-bonded interfaces, whereas those from 2-dimensional (2D) materials exhibit van der Waals interactions. Under the right conditions, however, material structures with mixed interfacial van der Waals and covalent bonding may be realized. Atomically thin layers formed at the epitaxial graphene (EG)/silicon carbide (SiC) interface indicate that EG/SiC interfaces provide this unique environment and enable synthesis of a rich palette of 2D materials not accessible with traditional techniques. Here, we demonstrate a method termed confinement heteroepitaxy (CHet), to realize air-stable, structurally unique, crystalline 2D-Ga, In, and Sn at the EG/SiC interface. The first intercalant layer is covalently-bonded to the SiC, and is accompanied by a vertical bonding gradient that ends with van der Waals interactions. Such structures break out of plane centrosymmetry, thereby introducing atomically thin, non-centrosymmetric 2D allotropes of 3D materials as a foundation for tunable superconductivity, topological states, and plasmonic properties.
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Submitted 30 May, 2019; v1 submitted 23 May, 2019;
originally announced May 2019.
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Direct observation of minibands in twisted heterobilayers
Authors:
Søren Ulstrup,
Roland J. Koch,
Simranjeet Singh,
Kathleen M. McCreary,
Berend T. Jonker,
Jeremy T. Robinson,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Jyoti Katoch,
Jill A. Miwa
Abstract:
Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed…
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Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed the presence of hybridized interlayer electron-hole pair excitations at energies defined by the superlattice potential [6-10]. The corresponding quasiparticle band structure, so-called minibands, have remained elusive and no such features have been reported for heterobilayers comprised of a TMD and another type of 2D material. Here, we introduce a new X-ray capillary technology for performing micro-focused angle-resolved photoemission spectroscopy (microARPES) with a spatial resolution on the order of 1 $μ$m, enabling us to map the momentum-dependent quasiparticle dispersion of heterobilayers consisting of graphene on WS$_2$ at variable interlayer twist angles ($θ$). Minibands are directly observed for $θ= 2.5^{\circ}$ in multiple mini Brillouin zones (mBZs), while they are absent for a larger twist angle of $θ= 26.3^{\circ}$. These findings underline the possibility to control quantum states via the stacking configuration in 2D heterostructures, opening multiple new avenues for generating materials with enhanced functionality such as tunable electronic correlations [11] and tailored selection rules for optical transitions [12].
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Submitted 14 April, 2019;
originally announced April 2019.
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Surface states and Rashba-type spin polarization in antiferromagnetic MnBi$_2$Te$_4$
Authors:
R. C. Vidal,
H. Bentmann,
T. R. F. Peixoto,
A. Zeugner,
S. Moser,
C. H. Min,
S. Schatz,
K. Kissner,
M. Ünzelmann,
C. I. Fornari,
H. B. Vasili,
M. Valvidares,
K. Sakamoto,
D. Mondal,
J. Fujii,
I. Vobornik,
S. Jung,
C. Cacho,
T. K. Kim,
R. J. Koch,
C. Jozwiak,
A. Bostwick,
J. D. Denlinger,
E. Rotenberg,
J. Buck
, et al. (10 additional authors not shown)
Abstract:
The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals…
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The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals by use of spin- and angle-resolved photoelectron spectroscopy experiments. In line with theoretical predictions, the results reveal a surface state in the bulk band gap and they provide evidence for the influence of exchange interaction and spin-orbit coupling on the surface electronic structure.
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Submitted 12 September, 2019; v1 submitted 28 March, 2019;
originally announced March 2019.
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Imaging microscopic electronic contrasts at the interface of single-layer WS$_2$ with oxide and boron nitride substrates
Authors:
Søren Ulstrup,
Roland J. Koch,
Daniel Schwarz,
Kathleen M. McCreary,
Berend T. Jonker,
Simranjeet Singh,
Aaron Bostwick,
Eli Rotenberg,
Chris Jozwiak,
Jyoti Katoch
Abstract:
The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and momentum-space electronic structures of electrically contacted single-layer WS$_2$ stacked on hBN, SiO$_2$ and TiO$_2$ substrates. Using work function and X-ray absorp…
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The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and momentum-space electronic structures of electrically contacted single-layer WS$_2$ stacked on hBN, SiO$_2$ and TiO$_2$ substrates. Using work function and X-ray absorption imaging we single-out clean microscopic regions of each interface type and collect the valence band dispersion. We infer the alignments of the electronic band gaps and electron affinities from the measured valence band offsets of WS$_2$ and the three substrate materials using a simple electron affinity rule and discuss the implications for vertical band structure engineering using mixed three- and two-dimensional materials.
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Submitted 25 March, 2019;
originally announced March 2019.
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Photoinduced ultrafast dynamics of local nematicity and lattice distortions in FeSe crystals
Authors:
T. Konstantinova,
L. Wu,
M. Abeykoon,
R. J. Koch,
A. F. Wang,
R. K. Li,
X. Shen,
J. Li,
J. Tao,
I. A. Zaliznyak,
C. Petrovic,
S. J. L. Billinge,
X. J. Wang,
E. S. Bozin,
Y. Zhu
Abstract:
Formation of electronic nematicity is a common thread of unconventional superconductors. In iron-based materials, the long-range nematic order is revealed by the orthorhombic lattice distortion, which importance is a highly controversial topic due the small magnitude of the distortion. Here, we study the local crystal structure of FeSe and its interaction with electronic degrees of freedom using u…
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Formation of electronic nematicity is a common thread of unconventional superconductors. In iron-based materials, the long-range nematic order is revealed by the orthorhombic lattice distortion, which importance is a highly controversial topic due the small magnitude of the distortion. Here, we study the local crystal structure of FeSe and its interaction with electronic degrees of freedom using ultrafast electron diffraction, x-ray pair distribution function analysis, and transmission electron microscopy and find a significant lattice response to local nematicity. The study demonstrates how local lattice distortions, which exist even at temperatures above the nematic phase transition, can be released by photoexcitation, leading to an enhancement of the crystalline order. The observed local atomic structures and their out-of-equilibrium behavior unravel a sophisticated coupling between the lattice and nematic order parameter in FeSe.
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Submitted 2 March, 2019;
originally announced March 2019.
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Correlated disorder to order crossover in the local structure of K$_x$Fe$_{2-y}$Se$_{2-z}$S$_z$
Authors:
P. Mangelis,
R. J. Koch,
H. Lei,
R. B. Neder,
M. T. McDonnell,
M. Feygenson,
C. Petrovic,
A. Lappas,
E. S. Bozin
Abstract:
A detailed account of the local atomic structure and disorder at 5~K across the phase diagram of the high temperature superconductor K$_x$Fe$_{2-y}$Se$_{2-z}$S$_z$ $(0 \leq z \leq 2)$ is obtained from neutron total scattering and associated atomic pair distribution function (PDF) approaches. Various model independent and model dependent aspects of the analysis reveal a high level of structural com…
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A detailed account of the local atomic structure and disorder at 5~K across the phase diagram of the high temperature superconductor K$_x$Fe$_{2-y}$Se$_{2-z}$S$_z$ $(0 \leq z \leq 2)$ is obtained from neutron total scattering and associated atomic pair distribution function (PDF) approaches. Various model independent and model dependent aspects of the analysis reveal a high level of structural complexity on the nanometer length-scale. Evidence is found for considerable disorder in the $c$-axis stacking of the FeSe$_{1-x}$S$_{x}$ slabs without observable signs of turbostratic character of the disorder. In contrast to the related FeCh (Ch = S, Se) type superconductors, substantial Fe-vacancies are present in K$_x$Fe$_{2-y}$Se$_{2-z}$S$_z$, deemed detrimental for superconductivity when ordered. Our study suggests that the distribution of vacancies significantly modifies the iron-chalcogen bond-length distribution, in agreement with observed evolution of the PDF signal. A crossover like transition is observed at a composition of $z\approx1$, from a predominantly vacancy-disordered state at the selenium end to a more vacancy-ordered (VO) phase closer to the sulfur end of the phase diagram. The S-content dependent measures of the local structure are found to exhibit distinct behavior on either side of this crossover, correlating well with the evolution of the superconducting state to that of a magnetic semiconductor towards the $z\approx2$ end. The behavior reinforces the idea of the intimate relationship of correlated Fe-vacancies order in the local structure and the emergent electronic properties.
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Submitted 19 September, 2019; v1 submitted 28 February, 2019;
originally announced March 2019.