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Light-matter interaction in 2D materials in weak and strong-coupling regimes
Authors:
Dogyun Ko
Abstract:
This thesis studies light-matter interactions in strong and weak coupling regimes. In the first part, we study the formation and propagation of exciton-polariton condensates in different microcavities in the strong coupling regime. Exciton-polaritons are composite quasiparticles created as a result of the strong coupling between microcavity photons and quantum well excitons. In the first part of t…
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This thesis studies light-matter interactions in strong and weak coupling regimes. In the first part, we study the formation and propagation of exciton-polariton condensates in different microcavities in the strong coupling regime. Exciton-polaritons are composite quasiparticles created as a result of the strong coupling between microcavity photons and quantum well excitons. In the first part of the thesis, we take a system of exciton-polaritons in a Kagome lattice and show that an initially localized condensate propagates in a specific direction in space in the presence of anisotropy in the lattice, and the initially localized condensate experiences revivals. We also study the formation of exciton-polariton condensates in two different lowest energy states at an exciton-polariton microcavity and the transition from the higher energy state to the ground state under pulsed and continuous wave excitation conditions by using various pump profiles. In the second part of the thesis, we study the valley selection rules for the optical transitions from impurity states to the conduction band in two-dimensional Dirac materials, taking a monolayer of MoS2 as an example, we focus on the weak light-matter coupling regime. We find the spectrum of the light absorption coefficients and calculate the photon-drag electric current density due to the impurity-band transitions.
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Submitted 11 January, 2024;
originally announced January 2024.
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Trap-limited electrical properties of organic semiconductor devices
Authors:
Donghyun Ko,
Gyuhyeon Lee,
Kyu-Myung Lee,
Yongsup Park,
Jaesang Lee
Abstract:
We investigated the electrical properties of a unipolar organic device with traps that were intentionally inserted into a particular position in the device. Depending on their inserted position, the traps significantly alter the charge distribution and the resulting electric field as well as the charge transport behavior in the device. In particular, as the traps are situated closer to a charge-in…
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We investigated the electrical properties of a unipolar organic device with traps that were intentionally inserted into a particular position in the device. Depending on their inserted position, the traps significantly alter the charge distribution and the resulting electric field as well as the charge transport behavior in the device. In particular, as the traps are situated closer to a charge-injection electrode, the band bending of a trap-containing organic layer occurs more strongly so that it effectively imposes a higher charge injection barrier. We propose an electrical model that fully accounts for the observed change in the electrical properties of the device with respect to the trap position.
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Submitted 19 February, 2023;
originally announced February 2023.
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Bogolon-mediated light absorption in atomic condensates of different dimensionality
Authors:
Dogyun Ko,
Meng Sun,
Vadim Kovalev,
Ivan Savenko
Abstract:
In the case of structureless bosons, cooled down to low temperatures, the absorption of electromagnetic waves by their Bose-Einstein condensate is usually forbidden due to the momentum and energy conservation laws: the phase velocity of the collective modes of the condensate called bogolons is sufficiently lower than the speed of light. Thus, only the light scattering processes persist. However, t…
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In the case of structureless bosons, cooled down to low temperatures, the absorption of electromagnetic waves by their Bose-Einstein condensate is usually forbidden due to the momentum and energy conservation laws: the phase velocity of the collective modes of the condensate called bogolons is sufficiently lower than the speed of light. Thus, only the light scattering processes persist. However, the situation might be different in the case of composite bosons or the bosons with an internal structure. Here, we develop a microscopic theory of electromagnetic power absorption by a Bose-Einstein condensates of cold atoms in various dimensions, utilizing the Bogoliubov model of a weakly-interacting Bose gas. Thus, we address the transitions between a collective coherent state of bosons and the discrete energy levels corresponding to excited internal degrees of freedom of non-condensed individual bosons. It is shown, that such transitions are mediated by one and two-bogolon excitations above the condensate, which demonstrate different efficiency at different frequencies and strongly depend on the condensate density, which influence varies depending on the dimensionality of the system.
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Submitted 1 August, 2022;
originally announced August 2022.
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Highly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2
Authors:
Kaixuan Zhang,
Youjin Lee,
Matthew J. Coak,
Junghyun Kim,
Suhan Son,
Inho Hwang,
Dong-Su Ko,
Youngtek Oh,
Insu Jeon,
Dohun Kim,
Changgan Zeng,
Hyun-Woo Lee,
Je-Geun Park
Abstract:
Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization switching in a single-material device formed of van-der-Waals topological ferromagnet Fe3GeTe2, whose magnetic information can be readily controlled by a tiny current.…
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Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization switching in a single-material device formed of van-der-Waals topological ferromagnet Fe3GeTe2, whose magnetic information can be readily controlled by a tiny current. Furthermore, the switching current density and power dissipation are about 400 and 4000 times smaller than those of the existing spin-orbit-torque magnetic random access memory based on conventional magnet/heavy-metal systems. Most importantly, we also demonstrate multi-level states, switched by electrical current, which can dramatically enhance the information capacity density and reduce computing costs. Thus, our observations combine both high energy efficiency and large information capacity density in one device, showcasing the potential applications of the emerging field of van-der-Waals magnets in the field of spin memory and spintronics.
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Submitted 7 January, 2025; v1 submitted 30 August, 2021;
originally announced August 2021.
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Optical valleytronics of impurity states in two-dimensional Dirac materials
Authors:
Dogyun Ko,
A. V. Morozov,
V. M. Kovalev,
I. G. Savenko
Abstract:
We analyze the valley selection rules for optical transitions from impurity states to the conduction band in two-dimensional Dirac materials, taking a monolayer of MoS2 as an example. We employ the analytical model of a shallow impurity potential which localizes electrons described by a spinor wave function, and, first, find the system eigenstates taking into account the presence of two valleys in…
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We analyze the valley selection rules for optical transitions from impurity states to the conduction band in two-dimensional Dirac materials, taking a monolayer of MoS2 as an example. We employ the analytical model of a shallow impurity potential which localizes electrons described by a spinor wave function, and, first, find the system eigenstates taking into account the presence of two valleys in the Brillouin zone. Then, we find the spectrum of the absorbance and calculate the photon-drag electric current due to the impurity-band transitions, drawing the general conclusions regarding the valley optical selection rules for the impurity-band optical transitions in gapped Dirac materials.
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Submitted 6 April, 2021; v1 submitted 26 October, 2020;
originally announced October 2020.
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Photoluminescence in PbS nanocrystal thin films: Nanocrystal density, film morphology and energy transfer
Authors:
L. Tsybeskov,
M. Alam,
S. B. Hafiz,
D. -K. Ko,
A. M. Bratkovsky,
X. Wu,
D. J. Lockwood
Abstract:
We show that photoluminescence properties of PbS nanocrystal thin films are directly related to film morphology and nanocrystal density. In densely packed PbS nanocrystal films, low-temperature donor-to-acceptor energy transfer is mainly responsible for the photoluminescence spectra narrowing and shift toward longer wavelengths. At elevated temperatures, back energy transfer is proposed to be resp…
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We show that photoluminescence properties of PbS nanocrystal thin films are directly related to film morphology and nanocrystal density. In densely packed PbS nanocrystal films, low-temperature donor-to-acceptor energy transfer is mainly responsible for the photoluminescence spectra narrowing and shift toward longer wavelengths. At elevated temperatures, back energy transfer is proposed to be responsible for an unusual photoluminescence intensity temperature dependence. In thin films with a low PbS nanocrystal density, the energy transfer is suppressed, and the effect is dramatically reduced.
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Submitted 5 October, 2020;
originally announced October 2020.
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Partial quantum revivals of localized condensates in distorted lattices
Authors:
Dogyun Ko,
Meng Sun,
Alexei Andreanov,
Y. G. Rubo,
I. G. Savenko
Abstract:
We report on a peculiar propagation of bosons loaded by a short Laguerre-Gaussian pulse in a nearly flat band of a lattice potential. Taking a system of exciton-polaritons in a kagome lattice as an example, we show that an initially localized condensate propagates in a specific direction in space if anisotropy is taken into account. This propagation consists of quantum jumps, collapses, and reviva…
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We report on a peculiar propagation of bosons loaded by a short Laguerre-Gaussian pulse in a nearly flat band of a lattice potential. Taking a system of exciton-polaritons in a kagome lattice as an example, we show that an initially localized condensate propagates in a specific direction in space if anisotropy is taken into account. This propagation consists of quantum jumps, collapses, and revivals of the whole compact states, and it persists given any direction of anisotropy. This property reveals its signatures in the tight-binding model and, surprisingly, it is much more pronounced in a continuous model. Quantum revivals are robust to the repulsive interaction and finite lifetime of the particles. Since no magnetic field or spin-orbit interaction is required, this system provides a new kind of easily implementable optical logic.
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Submitted 10 January, 2020;
originally announced January 2020.
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Exciton-Polariton Topological Insulator with an Array of Magnetic Dots
Authors:
Meng Sun,
Dogyun Ko,
D. Leykam,
V. M. Kovalev,
I. G. Savenko
Abstract:
Recently there have been several proposals on exciton-polariton topological insulators, most requiring strong external magnetic fields induced by bulky superconducting coils. We propose an alternate design for a polariton topological insulator, where excitons are in a proximity of an additional layer of a ferromagnetic material with a predefined magnetic moment located between the pillars of the c…
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Recently there have been several proposals on exciton-polariton topological insulators, most requiring strong external magnetic fields induced by bulky superconducting coils. We propose an alternate design for a polariton topological insulator, where excitons are in a proximity of an additional layer of a ferromagnetic material with a predefined magnetic moment located between the pillars of the cavity. Our design supports a variety of topological phases and transitions between Chern numbers $\pm 2$ and $\pm 1$ by varying either the magnetic moment of the ferromagnetic material or the spin-orbit coupling between different spin projections, thus enabling compact polariton devices harnessing switchable topological edge modes.
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Submitted 26 November, 2019;
originally announced November 2019.
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Spontaneous and mass-conserved formation of continuous Si frameworks
Authors:
K. Ogata,
D. -S. Ko,
C. Jung,
JH. Lee,
SH. Sul,
H. -G. Kim,
JA. Seo,
J. Jang,
M. Koh,
KH. Kim,
J. H. Kim,
I. S. Jung,
M. S. Park,
K. Takei,
K. Ito,
Y. Kubo,
K. Uosaki,
SG. Doo,
S. Han,
JK. Shin,
S. Jeon
Abstract:
Controlled formation of porous silicon has been of primary importance for numerous landmark applications such as light emitting sources, sensors, actuators, drug delivery systems, and energy storage applications. Frequently explored methods to form the structures have long relied on selective etching of silicon, which still stands as the most controllable and reliable methods to highlight essence…
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Controlled formation of porous silicon has been of primary importance for numerous landmark applications such as light emitting sources, sensors, actuators, drug delivery systems, and energy storage applications. Frequently explored methods to form the structures have long relied on selective etching of silicon, which still stands as the most controllable and reliable methods to highlight essence of the applications. Here, we demonstrate an unprecedented approach to form silicon framework, which is spontaneously formed with atomistic arrangement of silicon without gravimetric loss via single electrochemical (de)alloying with lithium. Carefully controlling bare crystallinity of Si and composite/electrode designs, we reveal that the key prerequisite to forming the structure lies in using unique dealloying dynamics of crystalline-amorphous phase transformations at room temperature. Using the feature, we clearly highlight that commercially available nano-structured silicon particles can abruptly yet uniformly transform into continuous sub-2 nm spherical silicon frameworks with size-tunable pores.
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Submitted 19 December, 2017;
originally announced December 2017.
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Revealing evolving affinity between Coulombic reversibility and hysteretic Li-Si phase transformations
Authors:
Ken Ogata,
Seongho Jeon,
Dong-Su Ko,
Insun Jung,
Jinhae Kim,
Kimihiko Ito,
Yoshimi Kubo,
Koichi Takei,
Shunsuke Saito,
Yonghee Cho,
Hosang Park,
Jihyun Jang,
Heegoo Kim,
Jung-Hwa Kim,
Yongsu Kim,
Meiten Koh,
Kohei Uosaki,
Seok-Gwang Doo,
Yunil Hwang,
Sung-soo Han
Abstract:
Nano-structured silicon anodes are attractive alternatives to graphite in Li-ion batteries. Despite recent remarkable progresses in numerous Si-C composites, the commercialisation with significance is still limited. One of the most critical issues remained to understand is fundamentals on Li-Si Coulombic efficiency, namely, CE. Particularly, it is key to quantitatively and qualitatively resolve CE…
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Nano-structured silicon anodes are attractive alternatives to graphite in Li-ion batteries. Despite recent remarkable progresses in numerous Si-C composites, the commercialisation with significance is still limited. One of the most critical issues remained to understand is fundamentals on Li-Si Coulombic efficiency, namely, CE. Particularly, it is key to quantitatively and qualitatively resolve CE alterations and evolutions by the various Li-Si structural changes over longer cycling. However, such work is surprisingly scarce. Here, we provide new findings that iterating the hysteretic amorphous-crystalline Li-Si phase transformations accumulatively governs CE evolutions, the manner of which is numerically distinguished from incremental amorphous Li-Si volume changes. The iterations, usually featured as capacity degradation factors, can form the most efficient CE profiles over hundreds of cycles, i.e. minimising accumulative irreversible Li consumption, among the given Li-Si reaction sequences. Combined with atomistic probing methodologies, we show that the iteration drastically alters electrochemical and structural characteristics, which is synchronised with the CE behaviours.
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Submitted 1 June, 2017;
originally announced June 2017.
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Blue-phase templated fabrication of three-dimensional nanostructures for photonic applications
Authors:
F. Castles,
F. V. Day,
S. M. Morris,
D. -H. Ko,
D. J. Gardiner,
M. M. Qasim,
S. Nosheen,
P. J. W. Hands,
S. S. Choi,
R. H. Friend,
H. J. Coles
Abstract:
A promising approach to the fabrication of materials with nanoscale features is the transfer of liquid-crystalline structure to polymers. However, this has not been achieved in systems with full three-dimensional periodicity. Here we demonstrate the fabrication of self-assembled three-dimensional nanostructures by polymer templating blue phase I, a chiral liquid crystal with cubic symmetry. Blue p…
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A promising approach to the fabrication of materials with nanoscale features is the transfer of liquid-crystalline structure to polymers. However, this has not been achieved in systems with full three-dimensional periodicity. Here we demonstrate the fabrication of self-assembled three-dimensional nanostructures by polymer templating blue phase I, a chiral liquid crystal with cubic symmetry. Blue phase I was photopolymerized and the remaining liquid crystal removed to create a porous free-standing cast which retains the chiral three-dimensional structure of the blue phase, yet contains no chiral additive molecules. The cast may in turn be used as a hard template for the fabrication of new materials. By refilling the cast with an achiral nematic liquid crystal, we created templated blue phases which have unprecedented thermal stability in the range -125 to 125 [degrees symbol]C, and that act both as mirrorless lasers and switchable electro-optic devices. Blue-phase templated materials will facilitate advances in device architectures for photonics applications in particular.
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Submitted 27 October, 2013;
originally announced October 2013.
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Comprehensive Control of Optical Polarization Anisotropy in Semiconducting Nanowires
Authors:
Lei Fang,
Xianwei Zhao,
Yi-Hsin Chiu,
Dongkyun Ko,
Kongara M. Reddy,
Nitin P. Padture,
Fengyuan Yang,
Ezekiel Johnston-Halperin
Abstract:
The demonstration of strong photoluminescence polarization anisotropy in semiconducting nanowires embodies both technological promise and scientific challenge. Here we present progress on both fronts through the study of the photoluminescence polarization anisotropy of randomly oriented nanowire ensembles in materials without/with crystalline anisotropy, small/wide bandgap, and both III-V/II-VI ch…
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The demonstration of strong photoluminescence polarization anisotropy in semiconducting nanowires embodies both technological promise and scientific challenge. Here we present progress on both fronts through the study of the photoluminescence polarization anisotropy of randomly oriented nanowire ensembles in materials without/with crystalline anisotropy, small/wide bandgap, and both III-V/II-VI chemistry (InP/ZnO nanowires, respectively). Comprehensive control of the polarization anisotropy is realized by dielectric matching with conformally deposited Ta2O5 (dielectric ratios of 9.6:4.41 and 4.0:4.41 for InP and ZnO, respectively). After dielectric matching, the polarization anisotropy of the nanowire ensembles is reduced by 86% for InP:Ta2O5 and 84% for ZnO:Ta2O5.
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Submitted 29 July, 2011;
originally announced August 2011.
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Defect states and disorder in charge transport in semiconductor nanowires
Authors:
Dongkyun Ko,
X. W. Zhao,
Kongara M. Reddy,
O. D. Restrepo,
R. Mishra,
I. S. Beloborodov,
Nandini Trivedi,
Nitin P. Padture,
W. Windl,
F. Y. Yang,
E. Johnston-Halperin
Abstract:
We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not we…
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We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not well described by existing theory. The ability to continuously tune between these regimes provides guidance for the extension of existing models and directly informs the design of next-generation nanoscale electronic devices.
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Submitted 22 June, 2011;
originally announced June 2011.
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Simulations of deposition growth models in various dimensions. Are overhangs important?
Authors:
David Y. K. Ko,
Flavio Seno
Abstract:
We present simulation results of deposition growth of surfaces in 2, 3 and 4 dimensions for ballistic deposition where overhangs are present, and for restricted solid on solid deposition where there are no overhangs. The values of the scaling exponents for the two models are found to be different, suggesting that they belong to different universality classes.
We present simulation results of deposition growth of surfaces in 2, 3 and 4 dimensions for ballistic deposition where overhangs are present, and for restricted solid on solid deposition where there are no overhangs. The values of the scaling exponents for the two models are found to be different, suggesting that they belong to different universality classes.
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Submitted 14 December, 1993;
originally announced December 1993.
