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Electric field control of magnetization dynamics in ZnMnSe/ZnBeSe diluted-magnetic-semiconductor heterostructures
Authors:
M. K. Kneip,
D. R. Yakovlev,
M. Bayer,
T. Slobodskyy,
G. Schmidt,
L. W. Molenkamp
Abstract:
We show that the magnetization dynamics in diluted magnetic semiconductors can be controlled separately from the static magnetization by means of an electric field. The spin-lattice relaxation (SLR) time of magnetic Mn2+ ions was tuned by two orders of magnitude by a gate voltage applied to n-type modulation-doped (Zn,Mn)Se/(Zn,Be)Se quantum wells. The effect is based on providing an additional…
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We show that the magnetization dynamics in diluted magnetic semiconductors can be controlled separately from the static magnetization by means of an electric field. The spin-lattice relaxation (SLR) time of magnetic Mn2+ ions was tuned by two orders of magnitude by a gate voltage applied to n-type modulation-doped (Zn,Mn)Se/(Zn,Be)Se quantum wells. The effect is based on providing an additional channel for SLR by a two-dimensional electron gas (2DEG). The static magnetization responsible for the giant Zeeman spin splitting of excitons was not influenced by the 2DEG density.
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Submitted 17 January, 2006;
originally announced January 2006.
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Engineering of spin-lattice relaxation dynamics by digital growth of diluted magnetic semiconductor CdMnTe
Authors:
M. K. Kneip,
D. R. Yakovlev,
M. Bayer,
G. Karczewski,
T. Wojtowicz,
J. Kossut
Abstract:
The technological concept of "digital alloying" offered by molecular-beam epitaxy is demonstrated to be a very effective tool for tailoring static and dynamic magnetic properties of diluted magnetic semiconductors. Compared to common "disordered alloys" with the same Mn concentration, the spin-lattice relaxation dynamics of magnetic Mn ions has been accelerated by an order of magnitude in (Cd,Mn…
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The technological concept of "digital alloying" offered by molecular-beam epitaxy is demonstrated to be a very effective tool for tailoring static and dynamic magnetic properties of diluted magnetic semiconductors. Compared to common "disordered alloys" with the same Mn concentration, the spin-lattice relaxation dynamics of magnetic Mn ions has been accelerated by an order of magnitude in (Cd,Mn)Te digital alloys, without any noticeable change in the giant Zeeman spin splitting of excitonic states, i.e. without effect on the static magnetization. The strong sensitivity of the magnetization dynamics to clustering of the Mn ions opens a new degree of freedom for spin engineering.
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Submitted 10 January, 2006;
originally announced January 2006.
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Spin-lattice relaxation of Mn-ions in ZnMnSe/ZnBeSe quantum wells measured under pulsed photoexcitation
Authors:
M. K. Kneip,
D. R. Yakovlev,
M. Bayer,
A. A. Maksimov,
I. I. Tartakovskii,
D. Keller,
W. Ossau,
L. W. Molenkamp,
A. Waag
Abstract:
The dynamics of spin-lattice relaxation of the Mn-ions in (Zn,Mn)Se-based diluted-magnetic-semiconductor quantum wells is studied by time-resolved photoluminescence. The spin-lattice relaxation time varies by five orders of magnitude from 10-3 down to 10-8 s, when the Mn content increases from 0.4 up to 11%. Free carriers play an important role in this dynamics. Hot carriers with excess kinetic…
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The dynamics of spin-lattice relaxation of the Mn-ions in (Zn,Mn)Se-based diluted-magnetic-semiconductor quantum wells is studied by time-resolved photoluminescence. The spin-lattice relaxation time varies by five orders of magnitude from 10-3 down to 10-8 s, when the Mn content increases from 0.4 up to 11%. Free carriers play an important role in this dynamics. Hot carriers with excess kinetic energy contribute to heating of the Mn system, while cooling of the Mn system occurs in the presence of cold background carriers provided by modulation doping. In a Zn0.89Mn0.11Se quantum well structure, where the spin-lattice relaxation process is considerably shorter than the characteristic lifetime of nonequilibrium phonons, also the phonon dynamics and its contribution to heating of the Mn system are investigated.
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Submitted 19 May, 2005;
originally announced May 2005.