Showing 1–1 of 1 results for author: Knaut, M

Top-down fabricated reconfigurable FET with two symmetric and high-current on-states

Authors: Maik Simon, Boshen Liang, Dustin Fischer, Martin Knaut, Alexander Tahn, Thomas Mikolajick, Walter M. Weber

Abstract: We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high on/off current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junct… ▽ More We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high on/off current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junctions are formed inside the wire and gated individually. The narrow omega-gated channel is fabricated by a repeated SiO2 etch and growth sequence and a conformal TiN deposition. The gate and Schottky contact metal work functions and the oxide-induced compressive stress to the Schottky junction are adjusted to result in only factor 1.6 higher p- than n-current for in absolute terms identical gate voltages and identical drain voltages. △ Less

Submitted 2 July, 2020; originally announced July 2020.

Comments: Nanowires, Reconfigurable field effect transistors, Polarity control, Electrostatic doping, Silicon on insulator technology, Omega-gates, Multiple-gate devices

Journal ref: in IEEE Electron Device Letters, vol. 41, no. 7, pp. 1110-1113, July 2020, doi: 10.1109/LED.2020.2997319