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Superconducting Energy Scales and Anomalous Dissipative Conductivity in Thin Films of Molybdenum Nitride
Authors:
Julian Simmendinger,
Uwe S. Pracht,
Lena Daschke,
Thomas Proslier,
Jeffrey A. Klug,
Martin Dressel,
Marc Scheffler
Abstract:
We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K $\ge{T_c}\ge$ 2.78 K. Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm$^{-1}$ (0.1 to 1.1 THz). The superconducting energy scales…
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We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K $\ge{T_c}\ge$ 2.78 K. Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm$^{-1}$ (0.1 to 1.1 THz). The superconducting energy scales, i.e. the critical temperature $T_c$, the pairing energy $Δ$, and the superfluid stiffness $J$, and the superfluid density $n_s$ can be well described within the Bardeen-Cooper-Schrieffer theory for conventional superconductors. At the same time, we find an anomalously large dissipative conductivity, which cannot be explained by thermally excited quasiparticles, but rather by a temperature-dependent normal-conducting fraction, persisting deep into the superconducting state. Our results on this disordered system constrain the regime, where discernible effects stemming from the disorder-induced superconductor-insulator transition possibly become relevant, to MoN films with a transition temperature lower than at least 2.78 K.
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Submitted 19 July, 2016;
originally announced July 2016.
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Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition
Authors:
Nickolas Groll,
Jeffrey A. Klug,
Chaoyue Cao,
Serdar Altin,
Helmut Claus,
Nicholas G. Becker,
John F. Zasadzinski,
Michael J. Pellin,
Thomas Proslier
Abstract:
A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported $T_c$ values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical…
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A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported $T_c$ values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below $\sim$10%) were obtained using an artificial tunnel barrier of Al$_2$O$_3$ on the film's surface grown $\textit{ex situ}$ by ALD. We find a large critical current density on the order of $4\times 10^6$A/cm$^2$ at $T=0.8T_c$ for a 60nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest the ALD technique offers significant promise for thin film superconducting device applications.
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Submitted 20 December, 2013;
originally announced December 2013.
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Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition
Authors:
Jeffrey A. Klug,
Nicholas G. Becker,
Nickolas R. Groll,
Chaoyue Cao,
Matthew S. Weimer,
Michael J. Pellin,
John F. Zasadzinski,
Thomas Proslier
Abstract:
Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resist…
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Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.
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Submitted 6 September, 2013;
originally announced September 2013.
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Measuring roughness of buried interfaces by sputter depth profiling
Authors:
S. V. Baryshev,
J. A. Klug,
A. V. Zinovev,
C. E. Tripa,
J. W. Elam,
I. V. Veryovkin
Abstract:
In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an improved dual beam approach featuring a low energy normally incident direct current sputtering ion beam (first beam). Intensities of 24Mg+ and 64Zn+ secondary ions ge…
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In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an improved dual beam approach featuring a low energy normally incident direct current sputtering ion beam (first beam). Intensities of 24Mg+ and 64Zn+ secondary ions generated by a pulsed analysis ion beam (second beam) were measured as a function of sample depth by time-of-flight secondary ion mass spectrometry (TOF SIMS). Experimental results of this dual beam TOF SIMS depth profiling processed in the framework of the mixing-roughness-information (MRI) model formalism demonstrate that such an approach is capable of providing structural information for layers just a few nm thick. Namely, it was established that the interfacial roughness of the MgO/ZnO multilayer structure equals 1.5 nm. This finding by TOF SIMS was cross-validated by independent measurements with specular X-ray reflectivity (XRR) technique. In addition, the TOF SIMS-MRI analysis suggests that the obtained 1.5 nm roughness should be attributed to the native roughness (jagged type) of the interface rather than to interdiffusion at the interface during the ALD synthesis.
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Submitted 17 May, 2012;
originally announced May 2012.
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Atomic layer deposition and superconducting properties of NbSi films
Authors:
Thomas Proslier,
Jeffrey A. Klug,
Jeffrey W. Elam,
Helmut Claus,
Nicholas G. Becker,
Michael Pellin
Abstract:
Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). This study revealed a self-limiting reaction with a growth rate of 4.5 Å/cycle. NbSi was found to grow only on oxide-free films prepa…
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Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). This study revealed a self-limiting reaction with a growth rate of 4.5 Å/cycle. NbSi was found to grow only on oxide-free films prepared using halogenated precursors. The electronic properties, growth rate, chemical composition, and structure of the films were studied over the deposition temperature range 150-400oC. For all temperatures, the films are found to be stoichiometric NbSi (1:1) with no detectable fluorine impurities, amorphous with a density of 6.65g/cm3, and metallic with a resistivity ρ=150 μΩ.cm at 300K for films thicker than 35 nm. The growth rate was nearly constant for deposition temperatures between 150-275oC, but increases above 300oC suggesting the onset of non-self limiting growth. The electronic properties of the films were measured down to 1.2K and revealed a superconducting transition at Tc=3.1K. To our knowledge, a superconducting niobium silicide film with a 1:1 stoichiometry has never been grown before by any technique.
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Submitted 18 April, 2011;
originally announced April 2011.
