Showing 1–23 of 23 results for author: Klie, R F

Robust Spectral Anomaly Detection in EELS Spectral Images via Three Dimensional Convolutional Variational Autoencoders

Authors: Seyfal Sultanov, James P Buban, Robert F Klie

Abstract: We introduce a Three-Dimensional Convolutional Variational Autoencoder (3D-CVAE) for automated anomaly detection in Electron Energy Loss Spectroscopy Spectrum Imaging (EELS-SI) data. Our approach leverages the full three-dimensional structure of EELS-SI data to detect subtle spectral anomalies while preserving both spatial and spectral correlations across the datacube. By employing negative log-li… ▽ More We introduce a Three-Dimensional Convolutional Variational Autoencoder (3D-CVAE) for automated anomaly detection in Electron Energy Loss Spectroscopy Spectrum Imaging (EELS-SI) data. Our approach leverages the full three-dimensional structure of EELS-SI data to detect subtle spectral anomalies while preserving both spatial and spectral correlations across the datacube. By employing negative log-likelihood loss and training on bulk spectra, the model learns to reconstruct bulk features characteristic of the defect-free material. In exploring methods for anomaly detection, we evaluated both our 3D-CVAE approach and Principal Component Analysis (PCA), testing their performance using Fe L-edge peak shifts designed to simulate material defects. Our results show that 3D-CVAE achieves superior anomaly detection and maintains consistent performance across various shift magnitudes. The method demonstrates clear bimodal separation between normal and anomalous spectra, enabling reliable classification. Further analysis verifies that lower dimensional representations are robust to anomalies in the data. While performance advantages over PCA diminish with decreasing anomaly concentration, our method maintains high reconstruction quality even in challenging, noise-dominated spectral regions. This approach provides a robust framework for unsupervised automated detection of spectral anomalies in EELS-SI data, particularly valuable for analyzing complex material systems. △ Less

Submitted 16 December, 2024; originally announced December 2024.

Strain Effects in SrHfO$_{3}$ Films Grown by Hybrid Molecular Beam Epitaxy

Authors: Patrick T. Gemperline, Arashdeep S. Thind, Chunli Tang, George E. Sterbinsky, Boris Kiefer, Wencan Jin, Robert F. Klie, Ryan B. Comes

Abstract: Perovskite oxides hetero-structures are host to a large number of interesting phenomena such as ferroelectricity and 2D-superconductivity. Ferroelectric perovskite oxides have been of significant interest due to their possible use in MOSFETs and FRAM. SrHfO$_3$ (SHO) is a perovskite oxide with pseudo-cubic lattice parameter of 4.1 $\mathring{A}$ that previous DFT calculations suggest can be stabil… ▽ More Perovskite oxides hetero-structures are host to a large number of interesting phenomena such as ferroelectricity and 2D-superconductivity. Ferroelectric perovskite oxides have been of significant interest due to their possible use in MOSFETs and FRAM. SrHfO$_3$ (SHO) is a perovskite oxide with pseudo-cubic lattice parameter of 4.1 $\mathring{A}$ that previous DFT calculations suggest can be stabilized in a ferroelectric P4mm phase, similar to STO, when stabilized with sufficient compressive strain. Additionally, it is insulating, possesses a large band gap, and a high dielectric constant, making it an ideal candidate for oxide electronic devices. In this work, SHO films were grown by hybrid molecular beam epitaxy with a tetrakis(ethylmethylamino)hafnium(IV) source on GdScO$_3$ and TbScO$_3$ substrates. Equilibrium and strained SHO phases were characterized using X-ray diffraction, X-ray absorption spectroscopy, and scanning transmission electron microscopy to determine the perovskite phase of the strained films, with the results compared to density functional theory models of phase stability versus strain. Contrary to past reports, we find that compressively-strained SrHfO$_3$ undergoes octahedral tilt distortions and most likely takes on the I4/mcm phase with the a$^0$a$^0$c$^-$ tilt pattern. △ Less

Submitted 19 September, 2024; originally announced September 2024.

Comments: 36 pages, 11 figures

Journal ref: ACS Appl. Electron. Mater. 2025, 7, 3, 983-996

Coherent Erbium Spin Defects in Colloidal Nanocrystal Hosts

Authors: Joeson Wong, Mykyta Onizhuk, Jonah Nagura, Arashdeep S. Thind, Jasleen K. Bindra, Christina Wicker, Gregory D. Grant, Yuxuan Zhang, Jens Niklas, Oleg G. Poluektov, Robert F. Klie, Jiefei Zhang, Giulia Galli, F. Joseph Heremans, David D. Awschalom, A. Paul Alivisatos

Abstract: We demonstrate nearly a microsecond of spin coherence in Er3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enabled by reducing the dopant density below the instantaneous diffusion limit in a nuclear spin-free host material, reaching the limit of a single erbium s… ▽ More We demonstrate nearly a microsecond of spin coherence in Er3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enabled by reducing the dopant density below the instantaneous diffusion limit in a nuclear spin-free host material, reaching the limit of a single erbium spin defect per nanocrystal. We observe a large Orbach energy in a highly symmetric cubic site, further protecting the coherence in a qubit that would otherwise rapidly decohere. Spatially correlated electron spectroscopy measurements reveal the presence of Ce3+ at the nanocrystal surface that likely acts as extraneous paramagnetic spin noise. Even with these factors, defect-embedded nanocrystal hosts show tremendous promise for quantum sensing and quantum communication applications, with multiple avenues, including core-shell fabrication, redox tuning of oxygen vacancies, and organic surfactant modification, available to further enhance their spin coherence and functionality in the future. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Comments: 26 pages, 5 figures

Polymorphism in Ruddlesden-Popper $La_{3}Ni_{2}O_{7}$: Discovery of a Hidden Phase with Distinctive Layer Stacking

Authors: Xinglong Chen, Junjie Zhang, A. S. Thind, S. Sharma, H. LaBollita, G. Peterson, H. Zheng, D. Phelan, A. S. Botana, R. F. Klie, J. F. Mitchell

Abstract: We report the discovery of a novel form of Ruddlesden-Popper (RP) oxide, which stands as the first example of long-range, coherent polymorphism in this class of inorganic solids. Rather than the well-known, uniform stacking of perovskite blocks ubiquitously found in RP phases, this newly discovered polymorph of the bilayer RP phase $La_{3}Ni_{2}O_{7}$adopts a novel stacking sequence in which singl… ▽ More We report the discovery of a novel form of Ruddlesden-Popper (RP) oxide, which stands as the first example of long-range, coherent polymorphism in this class of inorganic solids. Rather than the well-known, uniform stacking of perovskite blocks ubiquitously found in RP phases, this newly discovered polymorph of the bilayer RP phase $La_{3}Ni_{2}O_{7}$adopts a novel stacking sequence in which single and trilayer blocks of $NiO_{6}$ octahedra alternate in a 1313 sequence. Crystals of this new polymorph are described in space group Cmmm, although we note evidence for a competing Imcm variant. Transport measurements at ambient pressure reveal metallic character with evidence of a charge density wave transition with onset at T = 134 K, which lies intermediate between that of the standard 2222 polymorph of $La_{3}Ni_{2}O_{7}$ (space group Amam) and the trilayer RP phase, $La_{4}Ni_{3}O_{10}$. The discovery of such polymorphism could reverberate to the expansive range of science and applications that rely on RP materials, particularly the recently reported signatures of superconductivity with $T_{c}$ as high as 80 K above 14 GPa in bilayer $La_{3}Ni_{2}O_{7}$. △ Less

Submitted 10 December, 2023; originally announced December 2023.

Comments: 37 pages, 10 figures

Hybrid organic-inorganic two-dimensional metal carbide MXenes with amido- and imido-terminated surfaces

Authors: Chenkun Zhou, Di Wang, Francisco Lagunas, Benjamin Atterberry, Ming Lei, Huicheng Hu, Zirui Zhou, Alexander S. Filatov, De-en Jiang, Aaron J. Rossini, Robert F. Klie, Dmitri V. Talapin

Abstract: Two-dimensional (2D) transition-metal carbides and nitrides (MXenes) show impressive performance in applications, such as supercapacitors, batteries, electromagnetic interference shielding, or electrocatalysis. These materials combine the electronic and mechanical properties of 2D inorganic crystals with chemically modifiable surfaces, and surface-engineered MXenes represent an ideal platform for… ▽ More Two-dimensional (2D) transition-metal carbides and nitrides (MXenes) show impressive performance in applications, such as supercapacitors, batteries, electromagnetic interference shielding, or electrocatalysis. These materials combine the electronic and mechanical properties of 2D inorganic crystals with chemically modifiable surfaces, and surface-engineered MXenes represent an ideal platform for fundamental and applied studies of interfaces in 2D functional materials. A natural step in structural engineering of MXene compounds is the development and understanding of MXenes with various organic functional groups covalently bound to inorganic 2D sheets. Such hybrid structures have the potential to unite the tailorability of organic molecules with the unique electronic properties of inorganic 2D solids. Here, we introduce a new family of hybrid MXenes (h-MXenes) with amido- and imido-bonding between organic and inorganic parts. The description of h-MXene structure requires an intricate mix of concepts from the fields of coordination chemistry, self-assembled monolayers (SAMs) and surface science. The optical properties of h-MXenes reveal coherent coupling between the organic and inorganic components. h-MXenes also show superior stability against hydrolysis in aqueous solutions. △ Less

Submitted 27 May, 2023; originally announced May 2023.

Comments: 10 pages, 4 figures

Direct synthesis and chemical vapor deposition of 2D carbide and nitride MXenes

Authors: Di Wang, Chenkun Zhou, Alexander S. Filatov, Wooje Cho, Francisco Lagunas, Mingzhan Wang, Suriyanarayanan Vaikuntanathan, Chong Liu, Rober F. Klie, Dmitri V. Talapin

Abstract: Two-dimensional (2D) transition metal carbides and nitrides (MXenes) are a large family of materials actively studied for various applications, especially in the field of energy storage. To date, MXenes are commonly synthesized by etching the layered ternary compounds, MAX phases. Here we demonstrate a direct synthetic route for scalable and atom-economic synthesis of MXenes, including phases that… ▽ More Two-dimensional (2D) transition metal carbides and nitrides (MXenes) are a large family of materials actively studied for various applications, especially in the field of energy storage. To date, MXenes are commonly synthesized by etching the layered ternary compounds, MAX phases. Here we demonstrate a direct synthetic route for scalable and atom-economic synthesis of MXenes, including phases that have not been synthesized from MAX phases, by the reactions of metals and metal halides with graphite, methane or nitrogen. These directly synthesized MXenes showed excellent energy storage capacity for Li-ion intercalation. The direct synthesis enables chemical vapor deposition (CVD) growth of MXene carpets and complex spherulite-like morphologies. The latter form in a process resembling the evolution of cellular membranes during endocytosis. △ Less

Submitted 27 May, 2023; v1 submitted 17 December, 2022; originally announced December 2022.

Comments: 7 pages, 3 figures

Ingrained -- An automated framework for fusing atomic-scale image simulations into experiments

Authors: Eric Schwenker, V. S. Chaitanya Kolluru, Jinglong Guo, Xiaobing Hu, Qiucheng Li, Mark C. Hersam, Vinayak P. Dravid, Robert F. Klie, Jeffrey R. Guest, Maria K. Y. Chan

Abstract: To fully leverage the power of image simulation to corroborate and explain patterns and structures in atomic resolution microscopy (e.g., electron and scanning probe), an initial correspondence between the simulation and experimental image must be established at the outset of further high accuracy simulations or calculations. Furthermore, if simulation is to be used in context of highly automated… ▽ More To fully leverage the power of image simulation to corroborate and explain patterns and structures in atomic resolution microscopy (e.g., electron and scanning probe), an initial correspondence between the simulation and experimental image must be established at the outset of further high accuracy simulations or calculations. Furthermore, if simulation is to be used in context of highly automated processes or high-throughput optimization, the process of finding this correspondence itself must be automated. In this work, we introduce ingrained, an open-source automation framework which solves for this correspondence and fuses atomic resolution image simulations into the experimental images to which they correspond. We describe herein the overall ingrained workflow, focusing on its application to interface structure approximations, and the development of an experimentally rationalized forward model for scanning tunneling microscopy simulation. △ Less

Submitted 21 May, 2021; originally announced May 2021.

Machine-learned impurity level prediction for semiconductors: the example of Cd-based chalcogenides

Authors: Arun Mannodi-Kanakkithodi, Michael Y. Toriyama, Fatih G. Sen, Michael J. Davis, Robert F. Klie, Maria K. Y. Chan

Abstract: The ability to predict the likelihood of impurity incorporation and their electronic energy levels in semiconductors is crucial for controlling its conductivity, and thus the semiconductor's performance in solar cells, photodiodes, and optoelectronics. The difficulty and expense of experimental and computational determination of impurity levels makes a data-driven machine learning approach appropr… ▽ More The ability to predict the likelihood of impurity incorporation and their electronic energy levels in semiconductors is crucial for controlling its conductivity, and thus the semiconductor's performance in solar cells, photodiodes, and optoelectronics. The difficulty and expense of experimental and computational determination of impurity levels makes a data-driven machine learning approach appropriate. In this work, we show that a density functional theory-generated dataset of impurities in Cd-based chalcogenides CdTe, CdSe, and CdS can lead to accurate and generalizable predictive models of defect properties. By converting any semiconductor + impurity system into a set of numerical descriptors, regression models are developed for the impurity formation enthalpy and charge transition levels. These regression models can subsequently predict impurity properties in mixed anion CdX compounds (where X is a combination of Te, Se and S) fairly accurately, proving that although trained only on the end points, they are applicable to intermediate compositions. We make machine-learned predictions of the Fermi-level dependent formation energies of hundreds of possible impurities in 5 chalcogenide compounds, and suggest a list of impurities which can shift the equilibrium Fermi level in the semiconductor as determined by the dominant intrinsic defects. These dominating impurities as predicted by machine learning compare well with DFT predictions, revealing the power of machine-learned models in the quick screening of impurities likely to affect the optoelectronic behavior of semiconductors. △ Less

Submitted 5 June, 2019; originally announced June 2019.

Comments: 14 pages, 7 figures

Decay of high-energy electron bound states in crystals

Authors: Tadas Paulauskas, Robert F. Klie

Abstract: High-energy electrons that are used as a probe of specimens in transmission electron microscopy exhibit a complex and rich behavior due to multiple scattering. Among other things, understanding the dynamical effects is needed for a quantitative analysis of atomic-resolution images and spectroscopic data. In this study, state-correlation functions are computed within the multislice approach that al… ▽ More High-energy electrons that are used as a probe of specimens in transmission electron microscopy exhibit a complex and rich behavior due to multiple scattering. Among other things, understanding the dynamical effects is needed for a quantitative analysis of atomic-resolution images and spectroscopic data. In this study, state-correlation functions are computed within the multislice approach that allow to elucidate behaviors of transversely bound states in crystals. These states play an important role as a large fraction of current density can be coupled into them via focused electron probes. We show that bound states are generically unstable and decay monoexponentially with crystal depth. Their attenuation is accompanied by a resonant intensity transfer to Bessel-like wavefunctions that appear as Laue rings in the far-field diffraction patterns. Behaviors of bound states are also quantified when thermal effects are included, as well as point defects. This approach helps to bridge the Bloch wave and multisliced electron propagation pictures of dynamical scattering providing new insights into fundamental solutions of the wave equation, and may assist in developing quantitative STEM/TEM imaging techniques. △ Less

Submitted 22 November, 2018; originally announced November 2018.

Journal ref: Ultramicroscopy, Volume 196, January 2019, Pages 99-110

Experimental verification of orbital engineering at the atomic scale: charge transfer and symmetry breaking in nickelate heterostructures

Authors: Patrick J. Phillips, Paolo Longo, Alexandru B. Georgescu, Eiji Okunishi, Xue Rui, Ankit S. Disa, Fred Walker, Sohrab Ismail-Beigi, Charles H. Ahn, Robert F. Klie

Abstract: Epitaxial strain, layer confinement and inversion symmetry breaking have emerged as powerful new approaches to control the electronic and atomic-scale structural properties in complex metal oxides. Nickelate heterostructures, based on RENiO$_3$, where RE is a trivalent rare-earth cation, have been shown to be relevant model systems since the orbital occupancy, degeneracy, and, consequently, the el… ▽ More Epitaxial strain, layer confinement and inversion symmetry breaking have emerged as powerful new approaches to control the electronic and atomic-scale structural properties in complex metal oxides. Nickelate heterostructures, based on RENiO$_3$, where RE is a trivalent rare-earth cation, have been shown to be relevant model systems since the orbital occupancy, degeneracy, and, consequently, the electronic/magnetic properties can be altered as a function of epitaxial strain, layer thickness and superlattice structure. One such recent example is the tri-component LaTiO$_3$-LaNiO$_3$-LaAlO$_3$ superlattice, which exhibits charge transfer and orbital polarization as the result of its interfacial dipole electric field. A crucial step towards control of these parameters for future electronic and magnetic device applications is to develop an understanding of both the magnitude and range of the octahedral network's response towards interfacial strain and electric fields. An approach that provides atomic-scale resolution and sensitivity towards the local octahedral distortions and orbital occupancy is therefore required. Here, we employ atomic-resolution imaging coupled with electron spectroscopies and first principles theory to examine the role of interfacial charge transfer and symmetry breaking in a tricomponent nickelate superlattice system. We find that nearly complete charge transfer occurs between the LaTiO$_3$ and LaNiO$_3$ layers, resulting in a Ni$^{2+}$ valence state. We further demonstrate that this charge transfer is highly localized with a range of about 1 unit cell, within the LaNiO$_3$ layers. The results presented here provide important feedback to synthesis efforts aimed at stabilizing new electronic phases that are not accessible by conventional bulk or epitaxial film approaches. △ Less

Submitted 16 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. B 95, 205131 (2017)

Giant two-phonon Raman scattering from nanoscale NbC precipitates in Nb

Authors: C. Cao, R. Tao, D. C. Ford, R. F. Klie, T. Proslier, L. D. Cooley, A. Dzyuba, P. Zapol, M. Warren, H. Lind, J. F. Zasadzinski

Abstract: High purity niobium (Nb), subjected to the processing methods used in the fabrication of superconducting RF cavities, displays micron-sized surface patches containing excess carbon. High-resolution transmission electron microscopy and electron energy-loss spectroscopy measurements are presented which reveal the presence of nanoscale NbC coherent precipitates in such regions. Raman backscatter spec… ▽ More High purity niobium (Nb), subjected to the processing methods used in the fabrication of superconducting RF cavities, displays micron-sized surface patches containing excess carbon. High-resolution transmission electron microscopy and electron energy-loss spectroscopy measurements are presented which reveal the presence of nanoscale NbC coherent precipitates in such regions. Raman backscatter spectroscopy on similar surface regions exhibit spectra consistent with the literature results on bulk NbC but with significantly enhanced two-phonon scattering. The unprecedented strength and sharpness of the two-phonon signal has prompted a theoretical analysis, using density functional theory (DFT), of phonon modes in NbC for two different interface models of the coherent precipitate. One model leads to overall compressive strain and a comparison to ab-initio calculations of phonon dispersion curves under uniform compression of the NbC shows that the measured two-phonon peaks are linked directly to phonon anomalies arising from strong electron-phonon interaction. Another model of the extended interface between Nb and NbC, studied by DFT, gives insight into the frequency shifts of the acoustic and optical mode density of states measured by first order Raman. The exact origin of the stronger two-phonon response is not known at present but it suggests the possibility of enhanced electron-phonon coupling in transition metal carbides under strain found either in the bulk NbC inclusions or at their interfaces with Nb metal. Preliminary tunneling studies using a point contact method show some energy gaps larger than expected for bulk NbC. △ Less

Submitted 9 March, 2015; originally announced March 2015.

Comments: Phys. Rev. B, accepted

Journal ref: Phys. Rev. B 91, 094302 (2015)

Reversible modulation of orbital occupations via an interface-induced state in metallic manganites

Authors: Hanghui Chen, Qiao Qiao, Matthew S. J. Marshall, Alexandru B. Georgescu, Ahmet Gulec, Patrick J. Phillips, Robert F. Klie, Frederick J. Walker, Charles H. Ahn, Sohrab Ismail-Beigi

Abstract: The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering inmetal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroele… ▽ More The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering inmetal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroelectric polarization on the nanoscale. The change in orbital occupation can be as large as 10%, greatly exceeding that of bulk manganites. This reversible orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use epitaxial thin film growth and scanning transmission electron microscopy to verify this key interfacial polar distortion and discuss the potential of reversible control of orbital polarization via nanoscale ferroelectrics. △ Less

Submitted 12 September, 2014; originally announced September 2014.

Comments: This version is to replace the old submission arXiv:1309.2976 (withdrawn). We have made substantial revision and improvement in the new version

Journal ref: Nano Lett. 14, 4965 (2014)

Dynamical control of orbital occupations via a ferroelectric-induced polar state in metallic manganites

Authors: Hanghui Chen, Qiao Qiao, Matthew S. J. Marshall, Alexandru B. Georgescu, Ahmet Gulec, Patrick J. Phillips, Robert F. Klie, Frederick J. Walker, Charles H. Ahn, Sohrab Ismail-Beigi

Abstract: The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering in metal oxides. Here, we show how to dynamically modulate the orbital populations on Mn atoms at ferroelectric/manganite interfaces by switching the ferroelectric polarization. The change in orbital occu… ▽ More The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering in metal oxides. Here, we show how to dynamically modulate the orbital populations on Mn atoms at ferroelectric/manganite interfaces by switching the ferroelectric polarization. The change in orbital occupation can be as large as 10\%, greatly exceeding that of bulk manganites. This flippable orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use {\it ab initio} theory, epitaxial thin film growth, and scanning transmission electron microscopy to verify the predicted interfacial polar state and concomitant orbital splittings. △ Less

Submitted 14 September, 2014; v1 submitted 11 September, 2013; originally announced September 2013.

Comments: This paper has been withdrawn by the authors. A new version arXiv:1409.3672 replaces this old version

Microstructure of strained La2CuO4+delta thin films on varied sub-strates

Authors: Jiaqing He, Robert F. Klie, Gennady Logvenov, Ivan Bozovic, Yimei Zhu

Abstract: Layered perovskite La2CuO4+delta(LCO) thin films were epitaxially grown on SrTiO3 (STO) and LaSrAlO4 (LSAO) substrates by atomic-layer-by-layer molecular beam epitaxy. The lattice de-fects and residual strain in these films were investigated by means of transmission electron mi-croscopy and electron energy loss spectroscopy. The LCO films showed a high epitaxial quality with flat interfaces and… ▽ More Layered perovskite La2CuO4+delta(LCO) thin films were epitaxially grown on SrTiO3 (STO) and LaSrAlO4 (LSAO) substrates by atomic-layer-by-layer molecular beam epitaxy. The lattice de-fects and residual strain in these films were investigated by means of transmission electron mi-croscopy and electron energy loss spectroscopy. The LCO films showed a high epitaxial quality with flat interfaces and top surfaces. Misfit dislocations with Burgers vector a<010> and shear defects were frequently observed at or near the film/substrate interfaces and in the films, respec-tively, for all the LCO films. In one LCO film, grown on STO at the highest temperature, 700 oC, was a two layered structure. The top layer was identified as rhombohedral LaCuO2 by electron energy loss spectroscopy combined with electron diffraction. In addition, stacking faults were observed in plane-view micrographs of one LCO film grown on the STO substrate. The residual strains were evaluated from the spacing of misfit dislocations at the film/substrate interface and from the split electron diffraction patterns. Possible mechanisms of strain relaxations are dis-cussed based on the observed defects. △ Less

Submitted 5 December, 2006; originally announced December 2006.

Comments: 24 pages, 7 figures

Effect of Number of Walls on Plasmon Behavior in Carbon Nanotubes

Authors: M. H. Upton, R. F. Klie, J. P. Hill, T. Gog, D. Casa, W. Ku, Y. Zhu, M. Y. Sfeir, J. Misewich, G. Eres, D. Lowndes

Abstract: We investigate the physical parameters controlling the low energy screening in carbon nanotubes via electron energy loss spectroscopy and inelastic x-ray scattering. Two plasmon-like features are observed, one near 9 eV (the so-called pi plasmon) and one near 20 eV (the so-called pi+sigma plasmon). At large nanotube diameters, the pi+sigma plasmon energies are found to depend exclusively on the… ▽ More We investigate the physical parameters controlling the low energy screening in carbon nanotubes via electron energy loss spectroscopy and inelastic x-ray scattering. Two plasmon-like features are observed, one near 9 eV (the so-called pi plasmon) and one near 20 eV (the so-called pi+sigma plasmon). At large nanotube diameters, the pi+sigma plasmon energies are found to depend exclusively on the number of walls and not on the radius or chiral vector. The observed shift indicates a change in the strength of the screening and in the effective interaction at inter-atomic distances, and thus this result suggests a mechanism for tuning the properties of the nanotube. △ Less

Submitted 4 April, 2007; v1 submitted 6 November, 2006; originally announced November 2006.

Comments: 6 pages, 5 figures, submitted to PRB

Electron energy-loss spectroscopy study of electron-doping in MgB$_2$

Authors: R. F. Klie, J. C. Zheng, Y. Zhu, A. J. Zambano, L. D. Cooley

Abstract: The electronic structure of electron-doped polycrystalline Mg$_{1-x}$Al$_{x}$(B$_{1-y}$C$_{y}$)$_2$ was examined by electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) and first-principle electronic structure calculations. We found significant changes in the boron $K$ edge fine structure, suggesting the two bands of the B $K$ edge, the $σ$ and the $π$ b… ▽ More The electronic structure of electron-doped polycrystalline Mg$_{1-x}$Al$_{x}$(B$_{1-y}$C$_{y}$)$_2$ was examined by electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) and first-principle electronic structure calculations. We found significant changes in the boron $K$ edge fine structure, suggesting the two bands of the B $K$ edge, the $σ$ and the $π$ band are being simultaneously filled as the electron doping concentration of Mg$_{1-x}$Al$_{x}$(B$_{1-y}$C$_{y}$)$_2$ was increased. Our density-functional theory calculations confirm the filling of the $σ$ band states close to the Fermi level, which is believed to cause the loss of superconductivity in highly doped MgB$_2$, since the electron-phonon coupling of these states is thought to be responsible for the high superconducting transition temperature. Our results do not show significant differences in the electronic structure for electron doping on either the Mg or the B site, although many superconducting properties, such as $T_c$ or H$_{c_2}$ differ considerably for C- and Al- doped \MB. This behavior can not be satisfactorily explained by band filling alone, and effects such as interband scattering are considered. △ Less

Submitted 30 September, 2005; originally announced October 2005.

Comments: 16 pages, 9 figures

Inversion of two-band superconductivity at the critical electron doping of (Mg,Al)B$_2$

Authors: L. D. Cooley, A. J. Zambano, A. R. Moodenbaugh, R. F. Klie, Jin-Cheng Zheng, Yimei Zhu

Abstract: Electron energy-loss spectroscopy (EELS) was combined with heat capacity measurements to follow the change of superconductivity with systematic Al doping of MgB$_2$. By using x-ray diffraction and Vegard's law to assess the actual Al content in the samples, changes in behavior were found to be much more in agreement with theoretical predictions than in earlier studies. EELS data show that $σ$-ba… ▽ More Electron energy-loss spectroscopy (EELS) was combined with heat capacity measurements to follow the change of superconductivity with systematic Al doping of MgB$_2$. By using x-ray diffraction and Vegard's law to assess the actual Al content in the samples, changes in behavior were found to be much more in agreement with theoretical predictions than in earlier studies. EELS data show that $σ$-band hole states disappear above 33% Al, approximately the composition at which the $σ$ band Fermi surface is predicted to lose its cylindrical shape in reciprocal space and break apart into ellipsoidal pockets. At this composition, the $σ$ gap obtained from the heat capacity data falls to the level of the $π$ gap, implying that band filling results in the loss of strong superconductivity on the $σ$ band. However, superconductivity is not quenched completely, but persists with $T_c < 7$ K up to about 55% Al, the Al concentration at which the entire $σ$ band is predicted to fall below the Fermi surface. Since, in the region $0.33 \alt x \alt 0.55$, only the $π$ band has appreciable density of states, it becomes the stronger of the 2 bands, thus inverting the 2-band hierarchy of MgB$_2$. △ Less

Submitted 18 April, 2005; originally announced April 2005.

The Electronic and Superconducting Properties of Oxygen-Ordered MgB2 compounds of the form Mg2B3Ox

Authors: Juan C. Idrobo, Serdar Ogut, Taner Yildirim, Robert F. Klie, Nigel D. Browning

Abstract: Possible candidates for the Mg2B3Ox nanostructures observed in bulk of polycrystalline MgB2 (Ref.1) have been studied using a combination of Z-contrast imaging, electron energy loss spectroscopy (EELS) and first-principles calculations. The electronic structures, phonon modes, and electron phonon coupling parameters are calculated for two oxygen-ordered MgB2 compounds of composition Mg2B3O and M… ▽ More Possible candidates for the Mg2B3Ox nanostructures observed in bulk of polycrystalline MgB2 (Ref.1) have been studied using a combination of Z-contrast imaging, electron energy loss spectroscopy (EELS) and first-principles calculations. The electronic structures, phonon modes, and electron phonon coupling parameters are calculated for two oxygen-ordered MgB2 compounds of composition Mg2B3O and Mg2B3O2, and compared with those of MgB2. We find that the density of states for both Mg2B3Ox structures show very good agreement with EELS, indicating that they are excellent candidates to explain the observed coherent oxygen precipitates. Incorporation of oxygen reduces the transition temperature and gives calculated TC values of 18.3 K and 1.6 K for Mg2B3O and Mg2B3O2, respectively. △ Less

Submitted 3 March, 2004; originally announced March 2004.

Comments: Submitted to PRL

Aluminum Oxide Layers as Possible Components for Layered Tunnel Barriers

Authors: E. Cimpoiasu, S. K. Tolpygo, X. Liu, N. Simonian, J. E. Lukens, R. F. Klie, Y. Zhu, K. K. Likharev

Abstract: We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-g… ▽ More We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-grown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 deg C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theory of direct tunneling shows that the annealing of thermally-grown oxides at temperatures above 300 deg C results in a substantial increase of their average tunnel barriers height, from ~1.8 eV to ~2.45 eV, versus the practically unchanged height of ~2.0 eV for plasma-grown layers. This difference, together with high endurance of annealed barriers under electric stress (breakdown field above 10 MV/cm) may enable all-AlOx and SiO2/AlOx layered "crested" barriers for advanced floating-gate memory applications. △ Less

Submitted 3 February, 2004; originally announced February 2004.

Comments: 7 pages, 6 figures

Journal ref: J. Appl. Phys., vol. 96, no. 2, pp. 1088 -1093, Jul 2004

Experimental probing of the anisotropy of the empty p states near the Fermi level in MgB2

Authors: R. F. Klie, Y. Zhu, G. Schneider, J. Tafto

Abstract: We have studied the Boron K-edge in the superconductor MgB2 by electron energy loss spectroscopy (EELS) and experimentally resolved the empty p states at the Fermi level that have previously been observed within an energy window of 0.8eV by soft x-ray absorption spectroscopy. Using angular resolved EELS, we find that these states at the immediate edge onset have pxy character in agreement with p… ▽ More We have studied the Boron K-edge in the superconductor MgB2 by electron energy loss spectroscopy (EELS) and experimentally resolved the empty p states at the Fermi level that have previously been observed within an energy window of 0.8eV by soft x-ray absorption spectroscopy. Using angular resolved EELS, we find that these states at the immediate edge onset have pxy character in agreement with predictions from first-principle electronic structure calculations. △ Less

Submitted 29 January, 2003; originally announced January 2003.

Comments: 15 pages, 5 figures

Measuring the Hole State Anisotropy in MgB2 by Electron Energy-Loss Spectroscopy

Authors: Robert F. Klie, Haibin Su, Yimei Zhu, James W. Davenport, Juan-Carlos Idrobo, Nigel D. Browning, Peter D. Nellist

Abstract: We have examined polycrystalline MgB2 by electron energy loss spectroscopy (EELS) and density of state calculations. In particular, we have studied two different crystal orientations, [110] and [001] with respect to the incident electron beam direction, and found significant changes in the near-edge fine-structure of the B K-edge. Density functional theory suggests that the pre-peak of the B K-e… ▽ More We have examined polycrystalline MgB2 by electron energy loss spectroscopy (EELS) and density of state calculations. In particular, we have studied two different crystal orientations, [110] and [001] with respect to the incident electron beam direction, and found significant changes in the near-edge fine-structure of the B K-edge. Density functional theory suggests that the pre-peak of the B K-edge core loss is composed of a mixture of pxy and pz hole states and we will show that these contributions can be distinguished only with an experimental energy resolution better than 0.5 eV. For conventional TEM/STEM instruments with an energy resolution of ~1.0 eV the pre-peak still contains valuable information about the local charge carrier concentration that can be probed by core-loss EELS. By considering the scattering momentum transfer for different crystal orientations, it is possible to analytically separate pxy and pz components from of the experimental spectra With careful experiments and analysis, EELS can be a unique tool measuring the superconducting properties of MgB2, doped with various elements for improved transport properties on a sub-nanometer scale. △ Less

Submitted 14 November, 2002; originally announced November 2002.

Comments: 26 Pages, 5 figures, 1 table. Submited to PRB

Observation of coherent oxide precipitates in polycrystalline MgB2

Authors: R. F. Klie, J. C. Idrobo, N. D. Browning, A. C. Serquis, Y. T. Zhu, X. Z. Liao, F. M. Mueller

Abstract: Here we describe the results of an atomic resolution study of oxygen incorporation into bulk MgB2. We find that ~20-100 nm sized precipitates are formed by ordered substitution of oxygen atoms onto boron lattice sites, while the basic bulk MgB2 crystal structure and orientation is preserved. The periodicity of the oxygen ordering is dictated by the oxygen concentration in the precipitates and pr… ▽ More Here we describe the results of an atomic resolution study of oxygen incorporation into bulk MgB2. We find that ~20-100 nm sized precipitates are formed by ordered substitution of oxygen atoms onto boron lattice sites, while the basic bulk MgB2 crystal structure and orientation is preserved. The periodicity of the oxygen ordering is dictated by the oxygen concentration in the precipitates and primarily occurs in the (010) plane. The presence of these precipitates correlates well with an improved critical current density and superconducting transition behavior, implying that they act as pinning centers. △ Less

Submitted 13 March, 2002; originally announced March 2002.

Comments: Submitted to Applied Physics Letters, 6 pages, 3 figures

Direct observation of nm-scale Mg- and B-oxide phases at grain boundaries in MgB2

Authors: R. F. Klie, J. C. Idrobo, N. D. Browning

Abstract: Here we describe the results of an atomic resolution study of the structure and composition of both the interior of the grains, and the grain boundaries in polycrystalline MgB2. We find that there is no oxygen within the bulk of the grains but significant oxygen enrichment at the grain boundaries. The majority of grain boundaries contain BOx phases smaller than the coherence length, while others… ▽ More Here we describe the results of an atomic resolution study of the structure and composition of both the interior of the grains, and the grain boundaries in polycrystalline MgB2. We find that there is no oxygen within the bulk of the grains but significant oxygen enrichment at the grain boundaries. The majority of grain boundaries contain BOx phases smaller than the coherence length, while others contain larger areas of MgO sandwiched between BOx layers. Such results naturally explain the differences in connectivity between the grains observed by other techniques. △ Less

Submitted 15 July, 2001; originally announced July 2001.