Showing 1–5 of 5 results for author: Klement, P

Surface Diffusion Control Enables Tailored Aspect Ratio Nanostructures in Area-Selective Atomic Layer Deposition

Authors: Philip Klement, Daniel Anders, Lukas Gümbel, Michele Bastianello, Fabian Michel, Jörg Schörmann, Matthias T. Elm, Christian Heiliger, Sangam Chatterjee

Abstract: Area-selective atomic layer deposition is a key technology for modern microelectronics as it eliminates alignment errors inherent to conventional approaches by enabling material deposition only in specific areas. Typically, the selectivity originates from surface modifications of the substrate that allow or block precursor adsorption. The control of the deposition process currently remains a major… ▽ More Area-selective atomic layer deposition is a key technology for modern microelectronics as it eliminates alignment errors inherent to conventional approaches by enabling material deposition only in specific areas. Typically, the selectivity originates from surface modifications of the substrate that allow or block precursor adsorption. The control of the deposition process currently remains a major challenge as the selectivity of the no-growth areas is lost quickly. Here, we show that surface modifications of the substrate strongly manipulate the surface diffusion. The selective deposition of TiO$_2$ on poly (methyl methacrylate) and SiO$_2$ yields localized nanostructures with tailored aspect ratios. Controlling the surface diffusion allows to tune such nanostructures as it boosts the growth rate at the interface of the growth and no-growth areas. Kinetic Monte-Carlo calculations reveal that species move from high to low diffusion areas. Further, we identify the catalytic activity of TiCl$_4$ during the formation of carboxylic acid on poly (methyl methacrylate) as the reaction mechanism responsible for the loss of selectivity, and show that process optimization leads to higher selectivity. Our work enables the precise control of area-selective atomic layer deposition on the nanoscale, and offers new strategies in area-selective deposition processes by exploiting surface diffusion effects. △ Less

Submitted 8 December, 2020; originally announced December 2020.

Comments: 24 pages, 11 figures, including supporting material

Atomically thin sheets of lead-free one-dimensional hybrid perovskites feature tunable white-light emission from self-trapped excitons

Authors: Philip Klement, Natalie Dehnhardt, Chuan-Ding Dong, Florian Dobener, Samuel Bayliff, Julius Winkler, Detlev M. Hofmann, Peter J. Klar, Stefan Schumacher, Sangam Chatterjee, Johanna Heine

Abstract: Low-dimensional organic-inorganic perovskites synergize the virtues of two unique classes of materials featuring intriguing possibilities for next-generation optoelectronics: they offer tailorable building blocks for atomically thin, layered materials while providing the enhanced light harvesting and emitting capabilities of hybrid perovskites. Here, we go beyond the paradigm that atomically thin… ▽ More Low-dimensional organic-inorganic perovskites synergize the virtues of two unique classes of materials featuring intriguing possibilities for next-generation optoelectronics: they offer tailorable building blocks for atomically thin, layered materials while providing the enhanced light harvesting and emitting capabilities of hybrid perovskites. Here, we go beyond the paradigm that atomically thin materials require in-plane covalent bonding and report single layers of the one-dimensional organic-inorganic perovskite [C$_7$H$_{10}$N]$_3$[BiCl$_5$]Cl. Its unique 1D-2D structure enables single layers and the formation of self-trapped excitons which show white light emission. The thickness dependence of the exciton self-trapping causes an extremely strong shift of the emission energy. Thus, such two-dimensional perovskites demonstrate that already 1D covalent interactions suffice to realize atomically thin materials and provide access to unique exciton physics. These findings enable a much more general construction principle for tailoring and identifying two-dimensional materials that are no longer limited to covalently bonded 2D sheets. △ Less

Submitted 18 January, 2021; v1 submitted 4 December, 2020; originally announced December 2020.

Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures

Authors: Pasqual Rivera, John R. Schaibley, Aaron M. Jones, Jason S. Ross, Sanfeng Wu, Grant Aivazian, Philip Klement, Nirmal J. Ghimire, Jiaqiang Yan, D. G. Mandrus, Wang Yao, Xiaodong Xu

Abstract: Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be… ▽ More Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be realized heterostructure is that of differing monolayer TMDs with type II band alignment10-12. Their application potential hinges on the fabrication, understanding, and control of bonded monolayers, with bound electrons and holes localized in individual monolayers, i.e. interlayer excitons. Here, we report the first observation of interlayer excitons in monolayer MoSe2-WSe2 heterostructures by both photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity of interlayer excitons are highly tunable by an applied vertical gate voltage, implying electrical control of the heterojunction band-alignment. Using time resolved photoluminescence, we find that the interlayer exciton is long-lived with a lifetime of about 1.8 ns, an order of magnitude longer than intralayer excitons13-16. Our work demonstrates the ability to optically pump interlayer electric polarization and provokes the immediate exploration of interlayer excitons for condensation phenomena, as well as new applications in 2D light-emitting diodes, lasers, and photovoltaic devices. △ Less

Submitted 19 March, 2014; originally announced March 2014.

Comments: With Supplementary Materials

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Authors: Jason S. Ross, Philip Klement, Aaron M. Jones, Nirmal J. Ghimire, Jiaqiang Yan, D. G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Kenji Kitamura, Wang Yao, David H Cobden, Xiaodong Xu

Abstract: Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications… ▽ More Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and combined with the high optical quality of WSe2 it yields bright electroluminescence with 1000 times smaller injection current and 10 times smaller linewidth than in MoS2. Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged, and neutral excitons. This system has the required ingredients for new kinds of optoelectronic devices such as spin- and valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional electro-optic modulators. △ Less

Submitted 3 March, 2014; v1 submitted 4 December, 2013; originally announced December 2013.

Comments: 13 pages main text with 4 figures + 4 pages upplemental materials

Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2

Authors: Aaron M. Jones, Hongyi Yu, Jason S. Ross, Philip Klement, Nirmal J. Ghimire, Jiaqiang Yan, David G. Mandrus, Wang Yao, Xiaodong Xu

Abstract: Coupling degrees of freedom of distinct nature plays a critical role in numerous physical phenomena. The recent emergence of layered materials provides a laboratory for studying the interplay between internal quantum degrees of freedom of electrons. Here, we report experimental signatures of new coupling phenomena connecting real spin with layer pseudospins in bilayer WSe2. In polarization-resolve… ▽ More Coupling degrees of freedom of distinct nature plays a critical role in numerous physical phenomena. The recent emergence of layered materials provides a laboratory for studying the interplay between internal quantum degrees of freedom of electrons. Here, we report experimental signatures of new coupling phenomena connecting real spin with layer pseudospins in bilayer WSe2. In polarization-resolved photoluminescence measurements, we observe large spin orientation of neutral and charged excitons generated by both circularly and linearly polarized light, with a splitting of the trion spectrum into a doublet at large vertical electrical field. These observations can be explained by locking of spin and layer pseudospin in a given valley. Because up and down spin states are localized in opposite layers, spin relaxation is substantially suppressed, while the doublet emerges as a manifestation of electrically induced spin splitting resulting from the interlayer bias. The observed distinctive behavior of the trion doublet under circularly and linearly polarized light excitation further provides spectroscopic evidence of interlayer and intralayer trion species, a promising step toward optical manipulation in van der Waals heterostructures through the control of interlayer excitons. △ Less

Submitted 27 November, 2013; originally announced November 2013.

Comments: Original submitted version. To appear in Nature Physics