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Roadmap on Advancements of the FHI-aims Software Package
Authors:
Joseph W. Abbott,
Carlos Mera Acosta,
Alaa Akkoush,
Alberto Ambrosetti,
Viktor Atalla,
Alexej Bagrets,
Jörg Behler,
Daniel Berger,
Björn Bieniek,
Jonas Björk,
Volker Blum,
Saeed Bohloul,
Connor L. Box,
Nicholas Boyer,
Danilo Simoes Brambila,
Gabriel A. Bramley,
Kyle R. Bryenton,
María Camarasa-Gómez,
Christian Carbogno,
Fabio Caruso,
Sucismita Chutia,
Michele Ceriotti,
Gábor Csányi,
William Dawson,
Francisco A. Delesma
, et al. (175 additional authors not shown)
Abstract:
Electronic-structure theory is the foundation of the description of materials including multiscale modeling of their properties and functions. Obviously, without sufficient accuracy at the base, reliable predictions are unlikely at any level that follows. The software package FHI-aims has proven to be a game changer for accurate free-energy calculations because of its scalability, numerical precis…
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Electronic-structure theory is the foundation of the description of materials including multiscale modeling of their properties and functions. Obviously, without sufficient accuracy at the base, reliable predictions are unlikely at any level that follows. The software package FHI-aims has proven to be a game changer for accurate free-energy calculations because of its scalability, numerical precision, and its efficient handling of density functional theory (DFT) with hybrid functionals and van der Waals interactions. It treats molecules, clusters, and extended systems (solids and liquids) on an equal footing. Besides DFT, FHI-aims also includes quantum-chemistry methods, descriptions for excited states and vibrations, and calculations of various types of transport. Recent advancements address the integration of FHI-aims into an increasing number of workflows and various artificial intelligence (AI) methods. This Roadmap describes the state-of-the-art of FHI-aims and advancements that are currently ongoing or planned.
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Submitted 30 April, 2025;
originally announced May 2025.
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High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
Authors:
Seungheon Shin,
Hridibrata Pal,
Jon Pratt,
John Niroula,
Yinxuan Zhu,
Chandan Joishi,
Brianna A. Klein,
Andrew Armstrong,
Andrew A. Allerman,
Tomás Palacios,
Siddharth Rajan
Abstract:
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) w…
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We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) with an associated maximum current density of 342 mA/mm, and cut-off frequency of 9.1 GHz. Furthermore, low trap-related impact was observed from minimal gate and drain lag estimated from pulsed I-V characteristics. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation high-power radio frequency applications.
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Submitted 17 April, 2025; v1 submitted 17 April, 2025;
originally announced April 2025.
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Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
Authors:
Seungheon Shin,
Kyle Liddy,
Yinxuan Zhu,
Chandan Joishi,
Brianna A. Klein,
Andrew Armstrong,
Andrew A. Allerman,
Siddharth Rajan
Abstract:
We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future high-performance UWBG transistors. Using systematic experiments, we determined the fixed charge density (> 1013 cm-2), the dielectric/interface, and electric fields in the o…
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We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future high-performance UWBG transistors. Using systematic experiments, we determined the fixed charge density (> 1013 cm-2), the dielectric/interface, and electric fields in the oxide of under flat-band conditions in the semiconductor. Low gate-to-drain leakage current of up to 5 x 10-7 A/cm2 were obtained in the metal-oxide-semiconductor structures. In lateral metal-semiconductor-insulator test structures, breakdown voltage exceeding 1 kV was obtained with a channel sheet charge density of 1.27 x 1013 cm-2. The effective peak electric field and average breakdown field were estimated to be > 4.27 MV/cm and 1.99 MV/cm, respectively. These findings demonstrate the potential of Al2O2 integration for enhancing the breakdown performance of UWBG AlGaN HEMTs.
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Submitted 17 April, 2025; v1 submitted 1 April, 2025;
originally announced April 2025.
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Spontaneous Optimal Mixing via Defect-Vortex Coupling in Confined Active Nematics
Authors:
Brandon Klein,
Alejandro J. Soto Franco,
Md Mainul Hasan Sabbir,
Matthew J. Deutsch,
Ross Kliegman,
Robin L. B. Selinger,
Kevin A. Mitchell,
Daniel A. Beller
Abstract:
Active nematic flows in two dimensions, largely driven by motile $+1/2$ disclinations, mix themselves efficiently and exhibit chaos in the bulk steady state. Motivated by recent experimental findings for three-defect braiding in cardioid-shaped domains, we investigate how this tendency toward chaotic fluid mixing can, counterintuitively, produce certain ordered, periodic flows in confinement with…
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Active nematic flows in two dimensions, largely driven by motile $+1/2$ disclinations, mix themselves efficiently and exhibit chaos in the bulk steady state. Motivated by recent experimental findings for three-defect braiding in cardioid-shaped domains, we investigate how this tendency toward chaotic fluid mixing can, counterintuitively, produce certain ordered, periodic flows in confinement with a controllable net topological charge. We study two-dimensional active nematics in systems with boundary conditions requiring a prescribed number of excess $+1/2$ disclinations, using Beris-Edwards nematohydrodynamics simulations, alongside an agent-based, hydrodynamic simulation approach. We find ordered flows for systems of three and four defects, and we use tools from braid theory to show that spontaneously occurring periodic defect motions produce maximal topological entropy. Our theory correctly predicts the generic absence of stable periodic orbits of more than four defects in strong confinement in simulation. Our results identify the parameter regime outside of which periodicity is lost, and allow us to probe the limits of topological entropy production.
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Submitted 25 April, 2025; v1 submitted 13 March, 2025;
originally announced March 2025.
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Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN
Authors:
Yinxuan Zhu,
Andrew A. Allerman,
Chandan Joishi,
Jonathan Pratt,
Agnes Maneesha Dominic Merwin Xavier,
Gabriel Calderon Ortiz,
Brianna A. Klein,
Andrew Armstrong,
Jinwoo Hwang,
Siddharth Rajan
Abstract:
We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on an Al0.82Ga0.18N metal semiconductor field effect transistor (MESFET) by compositionally grading the contact layer from Al0.85Ga0.15N to Al0.14Ga0.86N with deg…
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We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on an Al0.82Ga0.18N metal semiconductor field effect transistor (MESFET) by compositionally grading the contact layer from Al0.85Ga0.15N to Al0.14Ga0.86N with degenerate doping and proper interfacial engineering considering bandgap-narrowing-induced band offset between channel and contact layer. This represents orders-of-magnitude of lower contact resistivity than that obtained in similar MOCVD-grown structures. A detailed, layer-by-layer analysis of the reverse graded contact and TCAD simulation of the bandgap narrowing effect highlighted that the reverse graded contact layer itself is extremely conductive and interfacial resistance due to bandgap-narrowing-induced barrier between contact and channel dominates the contact resistance.
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Submitted 15 November, 2024;
originally announced November 2024.
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One-step synthesis of graphene containing topological defects
Authors:
Benedikt P. Klein,
Matthew A. Stoodley,
Joel Deyerling,
Luke A. Rochford,
Dylan B. Morgan,
David Hopkinson,
Sam Sullivan-Allsop,
Fulden Eratam,
Lars Sattler,
Sebastian M. Weber,
Gerhard Hilt,
Alexander Generalov,
Alexei Preobrajenski,
Thomas Liddy,
Leon B. S. Williams,
Tien-Lin Lee,
Alex Saywell,
Roman Gorbachev,
Sarah J. Haigh,
Christopher Allen,
Willi Auwärter,
Reinhard J. Maurer,
David A. Duncan
Abstract:
Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used…
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Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis.
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Submitted 4 November, 2024;
originally announced November 2024.
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Probabilistic Photonic Computing with Chaotic Light
Authors:
Frank Brückerhoff-Plückelmann,
Hendrik Borras,
Bernhard Klein,
Akhil Varri,
Marlon Becker,
Jelle Dijkstra,
Martin Brückerhoff,
C. David Wright,
Martin Salinga,
Harish Bhaskaran,
Benjamin Risse,
Holger Fröning,
Wolfram Pernice
Abstract:
Biological neural networks effortlessly tackle complex computational problems and excel at predicting outcomes from noisy, incomplete data, a task that poses significant challenges to traditional processors. Artificial neural networks (ANNs), inspired by these biological counterparts, have emerged as powerful tools for deciphering intricate data patterns and making predictions. However, convention…
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Biological neural networks effortlessly tackle complex computational problems and excel at predicting outcomes from noisy, incomplete data, a task that poses significant challenges to traditional processors. Artificial neural networks (ANNs), inspired by these biological counterparts, have emerged as powerful tools for deciphering intricate data patterns and making predictions. However, conventional ANNs can be viewed as "point estimates" that do not capture the uncertainty of prediction, which is an inherently probabilistic process. In contrast, treating an ANN as a probabilistic model derived via Bayesian inference poses significant challenges for conventional deterministic computing architectures. Here, we use chaotic light in combination with incoherent photonic data processing to enable high-speed probabilistic computation and uncertainty quantification. Since both the chaotic light source and the photonic crossbar support multiple independent computational wavelength channels, we sample from the output distributions in parallel at a sampling rate of 70.4 GS/s, limited only by the electronic interface. We exploit the photonic probabilistic architecture to simultaneously perform image classification and uncertainty prediction via a Bayesian neural network. Our prototype demonstrates the seamless cointegration of a physical entropy source and a computational architecture that enables ultrafast probabilistic computation by parallel sampling.
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Submitted 31 January, 2024;
originally announced January 2024.
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Maximally mixing active nematics
Authors:
Kevin A. Mitchell,
Md Mainul Hasan Sabbir,
Kevin Geumhan,
Spencer A. Smith,
Brandon Klein,
Daniel A. Beller
Abstract:
Active nematics are an important new paradigm in soft condensed matter systems. They consist of rod-like components with an internal driving force pushing them out of equilibrium. The resulting fluid motion exhibits chaotic advection, in which a small patch of fluid is stretched exponentially in length. Using simulation, this Letter shows that this system can exhibit stable periodic motion when su…
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Active nematics are an important new paradigm in soft condensed matter systems. They consist of rod-like components with an internal driving force pushing them out of equilibrium. The resulting fluid motion exhibits chaotic advection, in which a small patch of fluid is stretched exponentially in length. Using simulation, this Letter shows that this system can exhibit stable periodic motion when sufficiently confined to a square with periodic boundary conditions. Moreover, employing tools from braid theory, we show that this motion is maximally mixing, in that it optimizes the (dimensionless) ``topological entropy'' -- the exponential stretching rate of a material line advected by the fluid. That is, this periodic motion of the defects, counterintuitively, produces more chaotic mixing than chaotic motion of the defects. We also explore the stability of the periodic state. Importantly, we show how to stabilize this orbit into a larger periodic tiling, a critical necessity for it to be seen in future experiments.
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Submitted 16 August, 2023;
originally announced August 2023.
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Characterizing Molecule-Metal Surface Chemistry with Ab-Initio Simulation of X-ray Absorption and Photoemission Spectra
Authors:
Samuel J. Hall,
Benedikt P. Klein,
Reinhard J. Maurer
Abstract:
X-ray photoemission and x-ray absorption spectroscopy are important techniques to characterize chemical bonding at surfaces and are often used to identify the strength and nature of adsorbate-substrate interactions. In this study, we judge the ability of x-ray spectroscopic techniques to identify different regimes of chemical bonding at metal-organic interfaces. To achieve this, we sample differen…
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X-ray photoemission and x-ray absorption spectroscopy are important techniques to characterize chemical bonding at surfaces and are often used to identify the strength and nature of adsorbate-substrate interactions. In this study, we judge the ability of x-ray spectroscopic techniques to identify different regimes of chemical bonding at metal-organic interfaces. To achieve this, we sample different interaction strength regimes in a comprehensive and systematic way by comparing two topological isomers, azulene and naphthalene, adsorbed on three metal substrates with varying reactivity, namely the (111) facets of Ag, Cu, and Pt. Using density functional theory, we simulate core-level binding energies and x-ray absorption spectra of the molecular carbon species. The simulated spectra reveal three distinct characteristics based on the molecule-specific spectral features which we attribute to types of surface chemical bonding with varying strength. We find that weak physisorption only leads to minor changes compared to the gas-phase spectra, weak chemisorption leads to charge transfer and significant spectral changes, while strong chemisorption leads to a loss of the molecule-specific features in the spectra. The classification we provide is aimed at assisting interpretation of experimental x-ray spectra for complex metal-organic interfaces.
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Submitted 8 February, 2023; v1 submitted 4 October, 2022;
originally announced October 2022.
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Spin glass systems as collective active inference
Authors:
Conor Heins,
Brennan Klein,
Daphne Demekas,
Miguel Aguilera,
Christopher Buckley
Abstract:
An open question in the study of emergent behaviour in multi-agent Bayesian systems is the relationship, if any, between individual and collective inference. In this paper we explore the correspondence between generative models that exist at two distinct scales, using spin glass models as a sandbox system to investigate this question. We show that the collective dynamics of a specific type of acti…
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An open question in the study of emergent behaviour in multi-agent Bayesian systems is the relationship, if any, between individual and collective inference. In this paper we explore the correspondence between generative models that exist at two distinct scales, using spin glass models as a sandbox system to investigate this question. We show that the collective dynamics of a specific type of active inference agent is equivalent to sampling from the stationary distribution of a spin glass system. A collective of specifically-designed active inference agents can thus be described as implementing a form of sampling-based inference (namely, from a Boltzmann machine) at the higher level. However, this equivalence is very fragile, breaking upon simple modifications to the generative models of the individual agents or the nature of their interactions. We discuss the implications of this correspondence and its fragility for the study of multiscale systems composed of Bayesian agents.
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Submitted 14 July, 2022;
originally announced July 2022.
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On Bayesian Mechanics: A Physics of and by Beliefs
Authors:
Maxwell J. D. Ramstead,
Dalton A. R. Sakthivadivel,
Conor Heins,
Magnus Koudahl,
Beren Millidge,
Lancelot Da Costa,
Brennan Klein,
Karl J. Friston
Abstract:
The aim of this paper is to introduce a field of study that has emerged over the last decade called Bayesian mechanics. Bayesian mechanics is a probabilistic mechanics, comprising tools that enable us to model systems endowed with a particular partition (i.e., into particles), where the internal states (or the trajectories of internal states) of a particular system encode the parameters of beliefs…
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The aim of this paper is to introduce a field of study that has emerged over the last decade called Bayesian mechanics. Bayesian mechanics is a probabilistic mechanics, comprising tools that enable us to model systems endowed with a particular partition (i.e., into particles), where the internal states (or the trajectories of internal states) of a particular system encode the parameters of beliefs about external states (or their trajectories). These tools allow us to write down mechanical theories for systems that look as if they are estimating posterior probability distributions over the causes of their sensory states. This provides a formal language for modelling the constraints, forces, potentials, and other quantities determining the dynamics of such systems, especially as they entail dynamics on a space of beliefs (i.e., on a statistical manifold). Here, we will review the state of the art in the literature on the free energy principle, distinguishing between three ways in which Bayesian mechanics has been applied to particular systems (i.e., path-tracking, mode-tracking, and mode-matching). We go on to examine a duality between the free energy principle and the constrained maximum entropy principle, both of which lie at the heart of Bayesian mechanics, and discuss its implications.
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Submitted 1 February, 2023; v1 submitted 23 May, 2022;
originally announced May 2022.
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Self-interaction error induces spurious charge transfer artefacts in core-level simulations of x-ray photoemission and absorption spectroscopy of metal-organic interfaces
Authors:
Samuel J. Hall,
Benedikt P. Klein,
Reinhard J. Maurer
Abstract:
First principles simulation of x-ray photoemission spectroscopy (XPS) is an important tool in the challenging interpretation and assignment of XPS data of metal-organic interfaces. We investigate the origin of the disagreement between XPS simulation and experiment for the azulene molecule adsorbed on Ag(111). We systematically eliminate possible causes for this discrepancy, including errors in the…
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First principles simulation of x-ray photoemission spectroscopy (XPS) is an important tool in the challenging interpretation and assignment of XPS data of metal-organic interfaces. We investigate the origin of the disagreement between XPS simulation and experiment for the azulene molecule adsorbed on Ag(111). We systematically eliminate possible causes for this discrepancy, including errors in the structural model and finite size effects in periodic boundary conditions. By analysis of the electronic structure in the ground-state and the core-hole excited-state, we are able to trace the error back to artificial charge transfer between adsorbed molecule and metal surface. This is caused by the self-interaction error of common exchange-correlation functionals. This error is not remedied by standard hybrid or range-separated hybrid functionals. We employ an ad hoc self-interaction error correction based on molecular orbital projection, that exposes this issue and is able to recover the correct experimental behaviour. The charge transfer artefact also negatively affects the prediction of X-ray absorption spectra for this system. Both the simulated photoemisson and x-ray absorption spectra show a better agreement with experimental data, once the ad hoc correction is employed. Similar core-hole-induced charge artefacts may affect core-level simulations at metal-organic interfaces more generally.
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Submitted 1 December, 2021;
originally announced December 2021.
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Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures
Authors:
N. A. Sanford,
P. T. Blanchard,
M. D. Brubaker,
A. K. Rishinaramangalam,
Q. Zhang,
A. Roshko,
D. F. Feezell,
B. D. B. Klein,
A. V. Davydov
Abstract:
Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four sample types were examined with (RBS determined) x = 0.030, 0.034, 0.056, and 0.112. The respective In(x)Ga(1-x)N layer thicknesses were 330 nm, 327 nm, 360 nm, and…
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Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four sample types were examined with (RBS determined) x = 0.030, 0.034, 0.056, and 0.112. The respective In(x)Ga(1-x)N layer thicknesses were 330 nm, 327 nm, 360 nm, and 55 nm. APT data were collected at (fixed) laser pulse energy (PE) selected within the range of (2-1000) fJ. Sample temperatures were = 54 K. PE within (2-50) fJ yielded x values that agreed with RBS (within uncertainty) and were comparatively insensitive to region-of-interest (ROI) geometry and orientation. By contrast, approximate stoichiometry was only found in the GaN portions of the samples provided PE was within (5-20) fJ and the analyses were confined to cylindrical ROIs (of diameters =20 nm) that were coaxial with the specimen tips. m-plane oriented tips were derived from c-axis grown, core-shell, GaN/In(x)Ga(1-x)N nanorod heterostructures. Compositional analysis along [0 0 0 1] (transverse to the long axis of the tip), of these m-plane samples revealed a spatial asymmetry in charge-state ratio (CSR) and a corresponding asymmetry in the resultant tip shape along this direction; no asymmetry in CSR or tip shape was observed for analysis along [-1 2-1 0]. Simulations revealed that the electric field strength at the tip apex was dominated by the presence of a p-type inversion layer, which developed under typical tip-electrode bias conditions for the n-type doping levels considered. Finally, both c-plane and m-plane sample types showed depth-dependent variations in absolute ion counts that depended upon ROI placement.
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Submitted 11 February, 2021;
originally announced February 2021.
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The Nuts and Bolts of Ab-Initio Core-Hole Simulations for K-shell X-Ray Photoemission and Absorption Spectra
Authors:
Benedikt Klein,
Samuel J. Hall,
Reinhard J. Maurer
Abstract:
X-ray photoemission (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy play an important role in investigating the structure and electronic structure of materials and surfaces. Ab-initio simulations provide crucial support for the interpretation of complex spectra containing overlapping signatures. Approximate core-hole simulation methods based on Density Functional Theory s…
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X-ray photoemission (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy play an important role in investigating the structure and electronic structure of materials and surfaces. Ab-initio simulations provide crucial support for the interpretation of complex spectra containing overlapping signatures. Approximate core-hole simulation methods based on Density Functional Theory such as the Delta-Self-Consistent-Field ($Δ$SCF) method or the transition potential (TP) method are widely used to predict K-shell XPS and NEXAFS signatures of organic molecules, inorganic materials and metal-organic interfaces at reliable accuracy and affordable computational cost. We present the numerical and technical details of our variants of the $Δ$SCF and transition potential method (coined $Δ$IP-TP) to simulate XPS and NEXAFS transitions. Using exemplary molecules in gas-phase, in bulk crystals, and at metal-organic interfaces, we systematically assess how practical simulation choices affect the stability and accuracy of simulations. These include the choice of exchange-correlation functional, basis set, the method of core-hole localization, and the use of periodic boundary conditions. We particularly focus on the choice of aperiodic or periodic description of systems and how spurious charge effects in periodic calculations affect the simulation outcomes. For the benefit of practitioners in the field, we discuss sensible default choices, limitations of the methods, and future prospects.
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Submitted 20 October, 2020;
originally announced October 2020.
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Color Change Effect in an Organic-Inorganic Hybrid Material Based on a Porphyrin Diacid
Authors:
Bettina Wagner,
Natalie Dehnhardt,
Martin Schmid,
Benedikt P. Klein,
Lukas Ruppenthal,
Philipp Müller,
Malte Zugermeier,
J. Michael Gottfried,
Sina Lippert,
Marc-Uwe Halbich,
Arash Rahimi-Iman,
Johanna Heine
Abstract:
Porphyrinic materials show a range of interesting and useful optical and electrical properties. The less well-known sub-class of porphyrin diacids has been used in this work to construct an ionic hybrid organic-inorganic material in combination with a halogenidometalate anion. The resulting compound, $[H_6TPyP][BiCl_6]_2$ (1) (TPyP = tetra(4-pyridyl)porphyrin) has been obtained via a facile soluti…
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Porphyrinic materials show a range of interesting and useful optical and electrical properties. The less well-known sub-class of porphyrin diacids has been used in this work to construct an ionic hybrid organic-inorganic material in combination with a halogenidometalate anion. The resulting compound, $[H_6TPyP][BiCl_6]_2$ (1) (TPyP = tetra(4-pyridyl)porphyrin) has been obtained via a facile solution based synthesis in single crystalline form. The material exhibits a broad photoluminescence emission band between 650 and 850 nm at room temperature. Single crystals of $[H_6TPyP][BiCl_6]_2$ show a photocurrent in the fA and a much higher dark current in the nA range. They also display an unexpected reversible color change upon wetting with different liquids. This phenomenon has been investigated with optical spectroscopy, SEM, XPS and NEXAFS techniques, showing that a surface-based structural coloration effect is the source of the color change. This stands in contrast to other materials where structural coloration typically has to be introduced through elaborate, multi-step processes or the use of natural templates. Additionally, it underscores the potential of self-assembly of porphyrinic hybrid compounds in the fabrication of materials with unusual optical properties.
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Submitted 15 November, 2016;
originally announced November 2016.
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Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy
Authors:
Martin Schmid,
Kunie Ishioka,
Andreas Beyer,
Benedikt P. Klein,
Claudio K. Krug,
Malte Sachs,
Hrvoje Petek,
Christopher J. Stanton,
Wolfgang Stolz,
Kerstin Volz,
J. Michael Gottfried,
Ulrich Höfer
Abstract:
We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical model…
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We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical models. The obtained depth profiles are in quantitative agreement with the band bending determinations for the same samples in a previous coherent phonon spectroscopic study. Our results demonstrate the applicability of the HAXPES with varying incident photon energy to characterize the electric potential profiles at buried semiconductor heterointerfaces.
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Submitted 11 November, 2016;
originally announced November 2016.
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Photoinduced tunability of the Reststrahlen band in 4H-SiC
Authors:
Bryan T. Spann,
Ryan Compton,
Daniel Ratchford,
James P. Long,
Adam D. Dunkelberger,
Paul B. Klein,
Alexander J. Giles,
Joshua D. Caldwell,
Jeffrey C. Owrutsky
Abstract:
Materials with a negative dielectric permittivity (e.g. metals) display high reflectance and can be shaped into nanoscale optical-resonators exhibiting extreme mode confinement, a central theme of nanophotonics. However, the ability to $actively$ tune these effects remains elusive. By photoexciting free carriers in 4H-SiC, we induce dramatic changes in reflectance near the "Reststrahlen band" wher…
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Materials with a negative dielectric permittivity (e.g. metals) display high reflectance and can be shaped into nanoscale optical-resonators exhibiting extreme mode confinement, a central theme of nanophotonics. However, the ability to $actively$ tune these effects remains elusive. By photoexciting free carriers in 4H-SiC, we induce dramatic changes in reflectance near the "Reststrahlen band" where the permittivity is negative due to charge oscillations of the polar optical phonons in the mid-infrared. We infer carrier-induced changes in the permittivity required for useful tunability (~ 40 cm$^{-1}$) in nanoscale resonators, providing a direct avenue towards the realization of actively tunable nanophotonic devices in the mid-infrared to terahertz spectral range.
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Submitted 30 November, 2015;
originally announced November 2015.
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Cubic H$_3$S around 200 GPa: an atomic hydrogen superconductor stabilized by sulfur
Authors:
D. A. Papaconstantopoulos,
B. M. Klein,
M. J. Mehl,
W. E. Pickett
Abstract:
The multiple scattering-based theory of Gaspari and Gyorffy for the electron-ion matrix element in close packed metals is applied to Im-3m H3S, which has been predicted by Duan {\it et al.} and Bernstein {\it et al} to be the stable phase at this stoichiometry around 190 GPa, thus is the leading candidate to be the phase observed to superconduct at 190K by Drozdov, Eremets, and Troyan. The nearly…
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The multiple scattering-based theory of Gaspari and Gyorffy for the electron-ion matrix element in close packed metals is applied to Im-3m H3S, which has been predicted by Duan {\it et al.} and Bernstein {\it et al} to be the stable phase at this stoichiometry around 190 GPa, thus is the leading candidate to be the phase observed to superconduct at 190K by Drozdov, Eremets, and Troyan. The nearly perfect separation of vibrational modes into those of S and of H character provides a simplification that enables identification of contributions of the two atoms separately. The picture that arises is basically that of superconducting atomic H stabilized by strong covalent mixing with S 3p and "3d" character. The reported isotope shift is much larger than the theoretical one,suggesting there is large anharmonicity in the H vibrations. Given the relative unimportance of sulfur, hydrides of lighter atoms at similarly high pressures may also lead to high temperature superconductivity.
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Submitted 27 May, 2015; v1 submitted 16 January, 2015;
originally announced January 2015.
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High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy
Authors:
MVS Chandrashekhar,
Iftekhar Chowdhury,
P. Kaminski,
R. Kozlowski,
P. B. Klein,
Tangali Sudarshan
Abstract:
Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109Ω-cmby maintaining high C/Si ratios 1.3-15 during growth.Comparison of secondary ion mass spectra betweenlow-dopedepilayers grown at C/Si ratio<1.3andSI-epilayers grown at C/Si ratio>1.3 showed little difference in residual impurity concentrations. A reconciliation of imp…
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Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109Ω-cmby maintaining high C/Si ratios 1.3-15 during growth.Comparison of secondary ion mass spectra betweenlow-dopedepilayers grown at C/Si ratio<1.3andSI-epilayers grown at C/Si ratio>1.3 showed little difference in residual impurity concentrations. A reconciliation of impurity concentration with measured resistivity indicated a compensating trap concentration of ~1015cm-3present only in the SI-epilayers. High- resolution photo induced transient spectroscopy (HRPITS) identified themas Si-vacancy related deep centers, with no detectable EH6/7 and Z1/2levels. Recombination lifetimes ~5ns suggest application in fast-switching power devices.
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Submitted 22 April, 2011;
originally announced April 2011.
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High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
Authors:
Iftekhar Chowdhury,
MVS Chandrasekhar,
Paul B Klein,
Joshua D. Caldwell,
Tangali Sudarshan
Abstract:
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl2, which is the predominant growth species in chlorinated chemistries. A specular surface…
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Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl2, which is the predominant growth species in chlorinated chemistries. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. The RMS roughness of the grown films ranged from 0.5-2.0 nm with very few morphological defects (carrots, triangular defects, etc.) being introduced, while enabling growth rates of 30-100 \mum/hr, 5-15 times higher than most conventional growths. Site-competition epitaxy was observed over a wide range of C/Si ratios, with doping concentrations < 1x1014 cm-3 being recorded. X-ray rocking curves indicated that the epilayers were of high crystallinity, with linewidths as narrow as 7.8 arcsec being observed, while microwave photoconductive decay (\muPCD) measurements indicated that these films had high injection (ambipolar) carrier lifetimes in the range of 2 \mus.
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Submitted 3 November, 2010;
originally announced November 2010.
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FFTS readout for large arrays of Microwave Kinetic Inductance Detectors
Authors:
S. J. C. Yates,
A. M. Baryshev,
J. J. A. Baselmans,
B. Klein,
R. Güsten
Abstract:
Microwave Kinetic Inductance Detectors (MKIDs) have great potential for large very sensitive detector arrays for use in, for example, sub-mm imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing $\sim$1000s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector fr…
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Microwave Kinetic Inductance Detectors (MKIDs) have great potential for large very sensitive detector arrays for use in, for example, sub-mm imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing $\sim$1000s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of Fast Fourier Transform Spectrometer (FFTS) readout, showing no deterioration of the noise performance compared to low noise analog mixing while allowing high multiplexing ratios.
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Submitted 13 March, 2009;
originally announced March 2009.
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Finite-Size Scaling behavior in the O(4)-Model
Authors:
Jens Braun,
Bertram Klein
Abstract:
The exact nature of the QCD phase transition has still not been determined conclusively, and there are contradictory results from lattice QCD simulations about the scaling behavior for two quark flavors. Ultimately, this issue can be resolved only by a careful scaling and finite-size scaling analysis of the lattice results. We use a renormalization group approach to obtain finite-size scaling fu…
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The exact nature of the QCD phase transition has still not been determined conclusively, and there are contradictory results from lattice QCD simulations about the scaling behavior for two quark flavors. Ultimately, this issue can be resolved only by a careful scaling and finite-size scaling analysis of the lattice results. We use a renormalization group approach to obtain finite-size scaling functions for the O(4)-model, which are relevant for this analysis. Our results are applicable to Lattice QCD studies of the QCD phase boundary.
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Submitted 12 August, 2009; v1 submitted 5 October, 2008;
originally announced October 2008.
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Scaling functions for the O(4)-model in d=3 dimensions
Authors:
Jens Braun,
Bertram Klein
Abstract:
A non-perturbative Renormalization Group approach is used to calculate scaling functions for an O(4) model in d=3 dimensions in the presence of an external symmetry-breaking field. These scaling functions are important for the analysis of critical behavior in the O(4) universality class. For example, the finite-temperature phase transition in QCD with two flavors is expected to fall into this cl…
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A non-perturbative Renormalization Group approach is used to calculate scaling functions for an O(4) model in d=3 dimensions in the presence of an external symmetry-breaking field. These scaling functions are important for the analysis of critical behavior in the O(4) universality class. For example, the finite-temperature phase transition in QCD with two flavors is expected to fall into this class. Critical exponents are calculated in local potential approximation. Parameterizations of the scaling functions for the order parameter and for the longitudinal susceptibility are given. Relations from universal scaling arguments between these scaling functions are investigated and confirmed. The expected asymptotic behavior of the scaling functions predicted by Griffiths is observed. Corrections to the scaling behavior at large values of the external field are studied qualitatively. These scaling corrections can become large, which might have implications for the scaling analysis of lattice QCD results.
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Submitted 20 December, 2007;
originally announced December 2007.
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Phonon and Elastic Instabilities in MoC and MoN
Authors:
G. L. W. Hart,
B. M. Klein
Abstract:
We present several results related to the instability of MoC and MoN in the B1 (sodium chloride) structure. These compounds were proposed as potential superconductors with moderately high transition temperatures. We show that the elastic instability in B1-structure MoN, demonstrated several years ago, persists at elevated pressures, thus offering little hope of stabilizing this material without…
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We present several results related to the instability of MoC and MoN in the B1 (sodium chloride) structure. These compounds were proposed as potential superconductors with moderately high transition temperatures. We show that the elastic instability in B1-structure MoN, demonstrated several years ago, persists at elevated pressures, thus offering little hope of stabilizing this material without chemical doping. For MoC, another material for which stoichiometric fabrication in the B1-structure has not proven possible, we find that all of the cubic elastic constants are positive, indicating elastic stability. Instead, we find X-point phonon instabilities in MoC (and in MoN as well), further illustrating the rich behavior of carbo-nitride materials. We also present additional electronic structure results for several transition metal (Zr, Nb and Mo) carbo-nitride systems and discuss systematic trends in the properties of these materials. Deviations from strict electron counting dependencies are apparent.
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Submitted 17 June, 1999;
originally announced June 1999.
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Real-space local polynomial basis for solid-state electronic-structure calculations: A finite-element approach
Authors:
J. E. Pask,
B. M. Klein,
C. Y. Fong,
P. A. Sterne
Abstract:
We present an approach to solid-state electronic-structure calculations based on the finite-element method. In this method, the basis functions are strictly local, piecewise polynomials. Because the basis is composed of polynomials, the method is completely general and its convergence can be controlled systematically. Because the basis functions are strictly local in real space, the method allow…
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We present an approach to solid-state electronic-structure calculations based on the finite-element method. In this method, the basis functions are strictly local, piecewise polynomials. Because the basis is composed of polynomials, the method is completely general and its convergence can be controlled systematically. Because the basis functions are strictly local in real space, the method allows for variable resolution in real space; produces sparse, structured matrices, enabling the effective use of iterative solution methods; and is well suited to parallel implementation. The method thus combines the significant advantages of both real-space-grid and basis-oriented approaches and so promises to be particularly well suited for large, accurate ab initio calculations. We develop the theory of our approach in detail, discuss advantages and disadvantages, and report initial results, including the first fully three-dimensional electronic band structures calculated by the method.
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Submitted 20 December, 2000; v1 submitted 20 March, 1999;
originally announced March 1999.
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Competition between Magnetic and Structural Transition in CrN
Authors:
A. Filippetti,
W. E. Pickett,
B. M. Klein
Abstract:
CrN is observed to undergo a paramagnetic to antiferromagnetic transition accompanied by a shear distortion from cubic NaCl-type to orthorhombic structure. Our first-principle plane wave and ultrasoft pseudopotential calculations confirm that the distorted antiferromagnetic phase with spin configuration arranged in double ferromagnetic sheets along [110] is the most stable. Antiferromagnetic ord…
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CrN is observed to undergo a paramagnetic to antiferromagnetic transition accompanied by a shear distortion from cubic NaCl-type to orthorhombic structure. Our first-principle plane wave and ultrasoft pseudopotential calculations confirm that the distorted antiferromagnetic phase with spin configuration arranged in double ferromagnetic sheets along [110] is the most stable. Antiferromagnetic ordering leads to a large depletion of states around Fermi level, but it does not open a gap. Simultaneous occurence of structural distortion and antiferromagnetic order is analyzed.
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Submitted 27 October, 1998; v1 submitted 20 August, 1998;
originally announced August 1998.
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Anharmonic effects in the A15 compounds induced by sublattice distortions
Authors:
Z. W. Lu,
B. M. Klein
Abstract:
We demonstrate that elastic anomalies and lattice instabilities in the the A15 compounds are describable in terms of first-principles LDA electronic structure calculations. We show that at T=0 V_3Si, V_3Ge, and Nb_3Sn are intrinsically unstable against shears with elastic moduli C_11-C_12 and C_44, and that the zone center phonons, Gamma_2 and Gamma_12, are either unstable or extremely soft. We…
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We demonstrate that elastic anomalies and lattice instabilities in the the A15 compounds are describable in terms of first-principles LDA electronic structure calculations. We show that at T=0 V_3Si, V_3Ge, and Nb_3Sn are intrinsically unstable against shears with elastic moduli C_11-C_12 and C_44, and that the zone center phonons, Gamma_2 and Gamma_12, are either unstable or extremely soft. We demonstrate that sublattice relaxation (internal strain) effects are key to understanding the behavior of the A15 materials.
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Submitted 7 July, 1997; v1 submitted 30 April, 1997;
originally announced April 1997.
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Structural, Magnetic and Electronic Properties of Fe/Au Monatomic Multilayers
Authors:
Zhu-Pei Shi,
John F. Cooke,
Zhenyu Zhang,
Barry M. Klein
Abstract:
An Fe/Au monatomic multilayer, consisting of alternating single Fe and Au layers, has been studied by means of the self-consistent full-potential linearized augmented plane wave method. We show by total energy minimization that this artificial thin film is in the tetragonal $L1_{0}$ ordered structure with the ratio of the interlayer spacing to the intralayer lattice constant at 0.865. In this co…
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An Fe/Au monatomic multilayer, consisting of alternating single Fe and Au layers, has been studied by means of the self-consistent full-potential linearized augmented plane wave method. We show by total energy minimization that this artificial thin film is in the tetragonal $L1_{0}$ ordered structure with the ratio of the interlayer spacing to the intralayer lattice constant at 0.865. In this configuration, the magnetic moment in each monolayer, the spin-polarized electronic density of states, and the corresponding band structure are calculated. The results are discussed in connection with recent experiments.
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Submitted 15 May, 1996;
originally announced May 1996.
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Interlayer Coupling in Magnetic/Pd Multilayers
Authors:
Zhu-Pei Shi,
Barry M. Klein
Abstract:
The Anderson model of local-state conduction electron mixing is applied to the p roblem of interlayer magnetic coupling in metallic multilayered structures with palladium (Pd) spacer layers. An oscillation period of $5$ spacer monolayers and the tendency towards ferromag netic bias of the interlayer magnetic coupling that we obtain are consistent with the experimental data.
The Anderson model of local-state conduction electron mixing is applied to the p roblem of interlayer magnetic coupling in metallic multilayered structures with palladium (Pd) spacer layers. An oscillation period of $5$ spacer monolayers and the tendency towards ferromag netic bias of the interlayer magnetic coupling that we obtain are consistent with the experimental data.
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Submitted 1 August, 1995;
originally announced August 1995.
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Spin-polarization-induced structural selectivity in Pd$_3X$ and Pt$_3X$ ($X=3d$) compounds
Authors:
Z. W. Lu,
B. M. Klein,
A. Zunger
Abstract:
Spin-polarization is known to lead to important {\it magnetic} and {\it optical} effects in open-shell atoms and elemental solids, but has rarely been implicated in controlling {\it structural} selectivity in compounds and alloys. Here we show that spin-polarized electronic structure calculations are crucial for predicting the correct $T=0$ crystal structures for Pd$_3X$ and Pt$_3X$ compounds. S…
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Spin-polarization is known to lead to important {\it magnetic} and {\it optical} effects in open-shell atoms and elemental solids, but has rarely been implicated in controlling {\it structural} selectivity in compounds and alloys. Here we show that spin-polarized electronic structure calculations are crucial for predicting the correct $T=0$ crystal structures for Pd$_3X$ and Pt$_3X$ compounds. Spin-polarization leads to (i) stabilization of the $L1_2$ structure over the $DO_{22}$ structure in Pt$_3$Cr, Pd$_3$Cr, and Pd$_3$Mn, (ii) to the stabilization of the $DO_{22}$ structure over the $L1_2$ structure in Pd$_3$Co and to (iii) ordering (rather than phase-separation) in Pt$_3$Co and Pd$_3$Cr. The results are analyzed in terms of first-principles local spin density calculations.
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Submitted 28 June, 1995;
originally announced June 1995.
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ELECTRONIC STRUCTURE OF FeSi
Authors:
V. R. Galakhov,
E. Z. Kurmaev,
V. M. Cherkashenko,
Yu. M. Yarmoshenko,
S. N. Shamin,
A. V. Postnikov,
St. Uhlenbrock,
M. Neumann,
Z. W. Lu,
Barry M. Klein,
Zhu-Pei Shi
Abstract:
The full set of high-energy spectroscopy measurements including X-ray photoelectron valence band spectra and soft X-ray emission valence band spectra of both components of FeSi (Fe K_beta_5, Fe L_alpha, Si K_beta_1,3 and Si L_2,3) are performed and compared with the results of ab-initio band structure calculations using the linearized muffin-tin orbital method and linearized augmented plane wave…
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The full set of high-energy spectroscopy measurements including X-ray photoelectron valence band spectra and soft X-ray emission valence band spectra of both components of FeSi (Fe K_beta_5, Fe L_alpha, Si K_beta_1,3 and Si L_2,3) are performed and compared with the results of ab-initio band structure calculations using the linearized muffin-tin orbital method and linearized augmented plane wave method.
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Submitted 11 May, 1995;
originally announced May 1995.