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Insulating-to-Conducting Behavior and Band Profile Across the La0.9Ba0.1MnO3/Nb:SrTiO3 Epitaxial Interface
Authors:
Weiwei Li,
Josee E. Kleibeuker,
Rui Wu,
Kelvin H. L. Zhang,
Chao Yun,
Judith L. MacManus-Driscoll
Abstract:
La0.9Ba0.1MnO3 is a ferromagnetic insulator in its bulk form, but exhibits metallicity in thin film form. It has a wide potential in a range of spintronic-related applications, and hence it is critical to understand thickness-dependent electronic structure in thin films as well as substrate/film interface effects. Here, using electrical and in-situ photoemission spectroscopy measurements, we repor…
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La0.9Ba0.1MnO3 is a ferromagnetic insulator in its bulk form, but exhibits metallicity in thin film form. It has a wide potential in a range of spintronic-related applications, and hence it is critical to understand thickness-dependent electronic structure in thin films as well as substrate/film interface effects. Here, using electrical and in-situ photoemission spectroscopy measurements, we report the electronic structure and interface band profile of high-quality layer-by-layer-grown La0.9Ba0.1MnO3 on single crystal Nb:SrTiO3 substrates. A transition from insulating-to-conducting was observed with increasing La0.9Ba0.1MnO3 thickness, which was explained by the determined interface band diagram of La0.9Ba0.1MnO3/Nb: SrTiO3, where a type II heterojunction was formed.
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Submitted 30 September, 2017;
originally announced October 2017.
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Electronic reconstruction at the isopolar LaTiO3/LaFeO3 interface: An x-ray photoemission and density functional theory study
Authors:
J. E. Kleibeuker,
Z. Zhong,
H. Nishikawa,
J. Gabel,
A. Müller,
F. Pfaff,
M. Sing,
K. Held,
R. Claessen,
G. Koster,
G. Rijnders
Abstract:
We report the formation of a non-magnetic band insulator at the isopolar interface between the antiferromagnetic Mott-Hubbard insulator LaTiO3 and the antiferromagnetic charge transfer insulator LaFeO3. By density functional theory calculations, we find that the formation of this interface state is driven by the combination of O band alignment and crystal field splitting energy of the t2g and eg b…
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We report the formation of a non-magnetic band insulator at the isopolar interface between the antiferromagnetic Mott-Hubbard insulator LaTiO3 and the antiferromagnetic charge transfer insulator LaFeO3. By density functional theory calculations, we find that the formation of this interface state is driven by the combination of O band alignment and crystal field splitting energy of the t2g and eg bands. As a result of these two driving forces, the Fe 3d bands rearrange and electrons are transferred from Ti to Fe. This picture is supported by x-ray photoelectron spectroscopy, which confirms the rearrangement of the Fe 3d bands and reveals an unprecedented charge transfer up to 1.2+/-0.2 e-/interface unit cell in our LaTiO3/LaFeO3 heterostructures.
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Submitted 5 November, 2014;
originally announced November 2014.
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Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO3/LaAlO3 oxide heterostructures
Authors:
E. Slooten,
Zhicheng Zhong,
H. J. A. Molegraaf,
P. D. Eerkes,
S. de Jong,
F. Massee,
E. van Heumen,
M. K. Kruize,
S. Wenderich,
J. E. Kleibeuker,
M. Gorgoi,
H. Hilgenkamp,
A. Brinkman,
M. Huijben,
G. Rijnders,
D. H. A. Blank,
G. Koster,
P. J. Kelly,
M. S. Golden
Abstract:
A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment - and hence internal electric fields - within the LaAlO3 layer. Firstly, the Ti 2p core level spectra clearly s…
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A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment - and hence internal electric fields - within the LaAlO3 layer. Firstly, the Ti 2p core level spectra clearly show occupation of Ti 3d states already for two unit cells of LaAlO3. Secondly, the LaAlO3 core levels were seen to shift to lower binding energy as the LaAlO3 overlayer thickness, n, was increased - agreeing with the expectations from the canonical electron transfer model for the emergence of conductivity at the interface. However, not only is the energy offset of only 300meV between n=2 (insulating interface) and n=6 (metallic interface) an order of magnitude smaller than the simple expectation, but it is also clearly not the sum of a series of unit-cell by unit-cell shifts within the LaAlO3 block. Both of these facts argue against the simple charge-transfer picture involving a cumulative shift of the LaAlO3 valence bands above the SrTiO3 conduction bands, resulting in charge transfer only for n>3. Turning to the theoretical data, our density functional simulations show that the presence of oxygen vacancies at the LaAlO3 surface at the 25% level reverses the direction of the internal field in the LaAlO3. Therefore, taking the experimental and theoretical results together, a consistent picture emerges for real-life samples in which nature does not wait until n=4 and already for n=2, mechanisms other than internal-electric-field-driven electron transfer from idealized LaAlO3 to near-interfacial states in the SrTiO3 substrate are active in heading off the incipient polarization catastrophe that drives the physics in these systems.
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Submitted 11 February, 2013; v1 submitted 10 January, 2013;
originally announced January 2013.
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Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures
Authors:
Yunzhong Chen,
Nini Pryds,
Josee E. Kleibeuker,
Gertjan Koster,
Jirong Sun,
Eugen Stamate,
Baogen Shen,
Guus Rijnders,
S. Linderoth
Abstract:
The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based heterostructures with various insulating overlayers of amorphous LaAlO3, SrTiO3 and yttria-stabilized zirconia films. On the other hand, samples of amorphous La7/8Sr1/8M…
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The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based heterostructures with various insulating overlayers of amorphous LaAlO3, SrTiO3 and yttria-stabilized zirconia films. On the other hand, samples of amorphous La7/8Sr1/8MnO3 films on SrTiO3 substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface of SrTiO3 substrates play an important role.
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Submitted 31 December, 2012;
originally announced December 2012.
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Defect engineering in oxide heterostructures by enhanced oxygen surface exchange
Authors:
M. Huijben,
G. Koster,
M. K. Kruize,
S. Wenderich,
J. Verbeeck,
S. Bals,
E. Slooten,
B. Shi,
H. J. A. Molegraaf,
J. E. Kleibeuker,
S. van Aert,
J. B. Goedkoop,
A. Brinkman,
D. H. A. Blank,
M. S. Golden,
G. van Tendeloo,
H. Hilgenkamp,
G. Rijnders
Abstract:
The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that…
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The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.
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Submitted 11 June, 2013; v1 submitted 11 August, 2010;
originally announced August 2010.
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Parallel electron-hole bilayer conductivity from electronic interface reconstruction
Authors:
R. Pentcheva,
M. Huijben,
K. Otte,
W. E. Pickett,
J. E. Kleibeuker,
J. Huijben,
H. Boschker,
D. Kockmann,
W. Siemons,
G. Koster,
H. J. W. Zandvliet,
G. Rijnders,
D. H. A. Blank,
H. Hilgenkamp,
A. Brinkman
Abstract:
The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO$_3$ capping layer prevents structural and chemical reconstruction at the LaAlO$_3$ surface and triggers the electronic reconstruction at a signif…
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The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO$_3$ capping layer prevents structural and chemical reconstruction at the LaAlO$_3$ surface and triggers the electronic reconstruction at a significantly lower LaAlO$_3$ film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.
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Submitted 6 April, 2010; v1 submitted 23 December, 2009;
originally announced December 2009.
