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Critical Evaluation of Organic Thin-Film Transistor Models
Authors:
Markus Krammer,
James W. Borchert,
Andreas Petritz,
Esther Karner-Petritz,
Gerburg Schider,
Barbara Stadlober,
Hagen Klauk,
Karin Zojer
Abstract:
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. W…
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Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. We propose a technique to establish whether a chosen model is adequate to represent the transistor operation. This two-step technique analyzes the electrical measurements of a series of TFTs with different channel lengths. The first step extracts the parameters for each individual transistor by fitting the full output and transfer characteristics to the transistor model. The second step checks whether the channel-length dependence of the extracted parameters is consistent with the model. We demonstrate the merit of the technique for distinct sets of organic TFTs that differ in the semiconductor, the contacts, and the geometry. Independent of the transistor set, our technique consistently reveals that state-of-the-art transistor models fail to reproduce the correct channel-length dependence. Our technique suggests that contemporary transistor models require improvements in terms of charge-carrier-density dependence of the mobility and/or the consideration of uncompensated charges in the transistor channel.
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Submitted 20 December, 2018;
originally announced December 2018.
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Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO$_3$-SrTiO$_3$-Based Heterostructures
Authors:
C. Woltmann,
T. Harada,
H. Boschker,
V. Srot,
P. A. van Aken,
H. Klauk,
J. Mannhart
Abstract:
The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO$_3$-SrTiO$_3$ heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μm, with a characteristic behavior comparable to semiconductin…
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The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO$_3$-SrTiO$_3$ heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μm, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several ten nanometers.
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Submitted 24 November, 2015;
originally announced November 2015.
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Graphene on a hydrophobic substrate: Doping reduction and hysteresis suppression under ambient conditions
Authors:
Myrsini Lafkioti,
Benjamin Krauss,
Timm Lohmann,
Ute Zschieschang,
Hagen Klauk,
Klaus v. Klitzing,
Jurgen H. Smet
Abstract:
The intrinsic doping level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies significantly and seems to depend strongly on processing details and the substrate morphology. Moreover, transport properties of such graphene devices suffer from hysteretic behavior under ambient conditions. The hysteresis presumably originates from…
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The intrinsic doping level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies significantly and seems to depend strongly on processing details and the substrate morphology. Moreover, transport properties of such graphene devices suffer from hysteretic behavior under ambient conditions. The hysteresis presumably originates from dipolar adsorbates on the substrate or graphene surface. Here, we demonstrate that it is possible to reliably obtain low intrinsic doping levels and to strongly suppress hysteretic behavior even in ambient air by depositing graphene on top of a thin, hydrophobic self assembled layer of hexamethyldisilazane (HMDS). The HMDS serves as a reproducible template that prevents the adsorption of dipolar substances. It may also screen the influence of substrate deficiencies.
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Submitted 14 October, 2009;
originally announced October 2009.
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InGaAs/GaAs/alkanethiolate radial superlattices: Experimental
Authors:
Christoph Deneke,
Ute Zschieschang,
Hagen Klauk,
Oliver G. Schmidt
Abstract:
A radial InGaAs/GaAs/1-hexadecanethiol superlattice is fabricated by the roll-up of a strained InGaAs/GaAs bilayer passivated with a molecular self-assembled monolayer. Our technique allows the formation of multi-period inorganic/organic hybrid heterostructures. This paper contains the detailed experimental description of how to fabricate these structures.
A radial InGaAs/GaAs/1-hexadecanethiol superlattice is fabricated by the roll-up of a strained InGaAs/GaAs bilayer passivated with a molecular self-assembled monolayer. Our technique allows the formation of multi-period inorganic/organic hybrid heterostructures. This paper contains the detailed experimental description of how to fabricate these structures.
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Submitted 8 January, 2007; v1 submitted 14 December, 2006;
originally announced December 2006.
