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Atomically thin sheets of lead-free one-dimensional hybrid perovskites feature tunable white-light emission from self-trapped excitons
Authors:
Philip Klement,
Natalie Dehnhardt,
Chuan-Ding Dong,
Florian Dobener,
Samuel Bayliff,
Julius Winkler,
Detlev M. Hofmann,
Peter J. Klar,
Stefan Schumacher,
Sangam Chatterjee,
Johanna Heine
Abstract:
Low-dimensional organic-inorganic perovskites synergize the virtues of two unique classes of materials featuring intriguing possibilities for next-generation optoelectronics: they offer tailorable building blocks for atomically thin, layered materials while providing the enhanced light harvesting and emitting capabilities of hybrid perovskites. Here, we go beyond the paradigm that atomically thin…
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Low-dimensional organic-inorganic perovskites synergize the virtues of two unique classes of materials featuring intriguing possibilities for next-generation optoelectronics: they offer tailorable building blocks for atomically thin, layered materials while providing the enhanced light harvesting and emitting capabilities of hybrid perovskites. Here, we go beyond the paradigm that atomically thin materials require in-plane covalent bonding and report single layers of the one-dimensional organic-inorganic perovskite [C$_7$H$_{10}$N]$_3$[BiCl$_5$]Cl. Its unique 1D-2D structure enables single layers and the formation of self-trapped excitons which show white light emission. The thickness dependence of the exciton self-trapping causes an extremely strong shift of the emission energy. Thus, such two-dimensional perovskites demonstrate that already 1D covalent interactions suffice to realize atomically thin materials and provide access to unique exciton physics. These findings enable a much more general construction principle for tailoring and identifying two-dimensional materials that are no longer limited to covalently bonded 2D sheets.
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Submitted 18 January, 2021; v1 submitted 4 December, 2020;
originally announced December 2020.
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Magneto-photoluminescence studies of Zn_{1-x}Mn_xTe/ZnTe multiple quantum-well and quantum dot structures
Authors:
Ivan J. Griffin,
Peter J. Klar,
Daniel Wolverson,
J. John Davies,
Bernard Lunn,
Duncan E. Ashenford,
Torsten Henning
Abstract:
Wide quantum dots were fabricated from multiple quantum well structures based on Zn_{1-x}Mn_xTe/ZnTe (x = 0.076) dilute magnetic semiconductors and were investigated via photoluminescence (PL) in a magnetic field. Calculations taking into account the strain in the two types of structure enabled the PL transitions to be identified and show that the dominant emission in the MQWs is from heavy-hole…
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Wide quantum dots were fabricated from multiple quantum well structures based on Zn_{1-x}Mn_xTe/ZnTe (x = 0.076) dilute magnetic semiconductors and were investigated via photoluminescence (PL) in a magnetic field. Calculations taking into account the strain in the two types of structure enabled the PL transitions to be identified and show that the dominant emission in the MQWs is from heavy-hole (hh) excitons whereas in the quantum dots, the removal of the strain in the barrier layers generates a large biaxial tensile strain in the quantum wells which shifts the light-hole (lh) exciton to lower energy than the hh exciton. The lh exciton sigma^+ transition is virtually independent of magnetic field whilst the hh exciton is field-dependent. Thus, at fields of 1 to 2 Tesla, the hh exciton sigma^+ transition again becomes the lowest energy transition of the quantum dots. These observations are described by a model with a chemical valence band offset of 30% for Zn_{1-x}Mn_xTe/ZnTe.
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Submitted 7 May, 1998;
originally announced May 1998.
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Photoluminescence and photoluminescence excitation studies of lateral size effects in Zn_{1-x}Mn_xSe/ZnSe quantum disc samples of different radii
Authors:
P. J. Klar,
D. Wolverson,
J. J. Davies,
W. Heimbrodt,
M. Happ,
Torsten Henning
Abstract:
Quantum disc structures (with diameters of 200 nm and 100 nm) were prepared from a Zn_{0.72}Mn_{0.28}Se/ZnSe single quantum well structure by electron beam lithography followed by an etching procedure which combined dry and wet etching techniques. The quantum disc structures and the parent structure were studied by photoluminescence and photoluminescence excitation spectroscopy. For the light-ho…
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Quantum disc structures (with diameters of 200 nm and 100 nm) were prepared from a Zn_{0.72}Mn_{0.28}Se/ZnSe single quantum well structure by electron beam lithography followed by an etching procedure which combined dry and wet etching techniques. The quantum disc structures and the parent structure were studied by photoluminescence and photoluminescence excitation spectroscopy. For the light-hole excitons in the quantum well region, shifts of the energy positions are observed following fabrication of the discs, confirming that strain relaxation occurs in the pillars. The light-hole exciton lines also sharpen following disc fabrication: this is due to an interplay between strain effects (related to dislocations) and the lateral size of the discs. A further consequence of the small lateral sizes of the discs is that the intensity of the donor-bound exciton emission from the disc is found to decrease with the disc radius. These size-related effects occur before the disc radius is reduced to dimensions necessary for lateral quantum confinement to occur but will remain important when the discs are made small enough to be considered as quantum dots.
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Submitted 17 March, 1998;
originally announced March 1998.
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Comparison of Zn_{1-x}Mn_xTe/ZnTe multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity
Authors:
P. J. Klar,
D. Wolverson,
D. E. Ashenford,
B. Lunn,
Torsten Henning
Abstract:
Large-area high density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zn_{0.93}Mn_{0.07}Te/ZnTe multiple quantum well structures of different well width (4 nm, 6 nm, 8 nm and 10 nm) by electron beam lithography followed by Ar+ ion beam etching. Below-bandgap photomodulated reflectivity spectra of the quantum dot samples and the parent heterostructure…
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Large-area high density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zn_{0.93}Mn_{0.07}Te/ZnTe multiple quantum well structures of different well width (4 nm, 6 nm, 8 nm and 10 nm) by electron beam lithography followed by Ar+ ion beam etching. Below-bandgap photomodulated reflectivity spectra of the quantum dot samples and the parent heterostructures were then recorded at 10 K and the spectra were fitted to extract the linewidths and the energy positions of the excitonic transitions in each sample. The fitted results are compared to calculations of the transition energies in which the different strain states in the samples are taken into account. We show that the main effect of the nanofabrication process is a change in the strain state of the quantum dot samples compared to the parent heterostructures. The quantum dot pillars turn out to be freestanding, whereas the heterostructures are in a good approximation strained to the ZnTe lattice constant. The lateral size of the dots is such that extra confinement effects are not expected or observed.
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Submitted 1 October, 1997;
originally announced October 1997.
