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Slow Relaxation and Equilibrium Dynamics in a 2 D Coulomb Glass: Demonstration of Stretched Exponential Energy Correlations
Authors:
M. Kirkengen,
J. Bergli
Abstract:
We have simulated energy relaxation and equilibrium dynamics in Coulomb Glasses using the random energy lattice model. We show that in a temperature range where the Coulomb Gap is already well developed, (T=0.03-0.1) the system still relaxes to an equilibrium behavior within the simulation time scale. For all temperatures T, the relaxation is slower than exponential. Analyzing the energy correla…
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We have simulated energy relaxation and equilibrium dynamics in Coulomb Glasses using the random energy lattice model. We show that in a temperature range where the Coulomb Gap is already well developed, (T=0.03-0.1) the system still relaxes to an equilibrium behavior within the simulation time scale. For all temperatures T, the relaxation is slower than exponential. Analyzing the energy correlations of the system at equilibrium, we find a stretched exponential behavior. We define a time τ_γfrom these stretched exponential correlations, and show that this time corresponds well with the time required to reach equilibrium. From our data it is not possible to determine whether τ_γdiverges at any finite temperature, indicating a glass transition, or whether this divergence happens at zero temperature. While the time dependence of the system energy can be well fitted by a random walker in a harmonic potential for high temperatures (T=10), this simple model fails to describe the long time scales observed at lower temperatures. Instead we present an interpretation of the configuration space as a structure with fractal properties, and the time evolution as a random walk on this fractal-like structure.
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Submitted 30 October, 2008;
originally announced October 2008.
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Direct generation of charge carriers in c-Si solar cells due to embedded nanoparticles
Authors:
Martin Kirkengen,
Joakim Bergli,
Yuri M. Galperin
Abstract:
It is known that silicon is an indirect band gap material, reducing its efficiency in photovoltaic applications. Using surface plasmons in metallic nanoparticles embedded in a solar cell has recently been proposed as a way to increase the efficiency of thin film silicon solar cells. The dipole mode that dominates the plasmons in small particles produces an electric field having Fourier component…
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It is known that silicon is an indirect band gap material, reducing its efficiency in photovoltaic applications. Using surface plasmons in metallic nanoparticles embedded in a solar cell has recently been proposed as a way to increase the efficiency of thin film silicon solar cells. The dipole mode that dominates the plasmons in small particles produces an electric field having Fourier components with all wave numbers. In this work, we show that such a field creates electron-hole-pairs without phonon assistance, and discuss the importance of this effect compared to radiation from the particle and losses due to heating.
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Submitted 20 August, 2007;
originally announced August 2007.
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Ohmic and non-Ohmic Andreev transport through an interface between superconductor and hopping insulator: Dramatic role of barrier properties
Authors:
M. Kirkengen,
J. Bergli,
Y. M. Galperin
Abstract:
At low temperatures and voltages tunneling transport through an interface between a superconductor and hopping insulator is dominated by coherent two-electron tunneling between the Cooper-pair condensate and pairs of localized states, see Kozub et al., PRL 96, 107004 (2006). By detailed analysis of such transport we show that the interface resistance is extremely sensitive to the properties of t…
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At low temperatures and voltages tunneling transport through an interface between a superconductor and hopping insulator is dominated by coherent two-electron tunneling between the Cooper-pair condensate and pairs of localized states, see Kozub et al., PRL 96, 107004 (2006). By detailed analysis of such transport we show that the interface resistance is extremely sensitive to the properties of the tunneling barriers, as well as to asymptotic behavior of the localized states. In particular, dramatic cancellation takes place for hydrogen-like impurities and ideal barrier. However, some disorder can lift the cancellations restoring the interface transport. We also study non-Ohmic behavior of the interface resistor and show that it is sensitive to the Coulomb correlation of the occupation probabilities of the involved localized states. It is expected that non-Ohmic contribution to I-V-curve will experience pronounced mesoscopic (fingerprint) fluctuations.
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Submitted 4 July, 2006;
originally announced July 2006.
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Nonlinear acoustic and microwave absorption in disordered semiconductors
Authors:
M. Kirkengen,
Y. M. Galperin
Abstract:
Nonlinear hopping absorption of ultrasound and electromagnetic waves in amorphous and doped semiconductors is considered. It is shown that even at low amplitudes of the electric (or acoustic) field the nonlinear corrections to the relaxational absorption appear anomalously large. The physical reason for such behavior is that the nonlinear contribution is dominated by a small group of close impur…
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Nonlinear hopping absorption of ultrasound and electromagnetic waves in amorphous and doped semiconductors is considered. It is shown that even at low amplitudes of the electric (or acoustic) field the nonlinear corrections to the relaxational absorption appear anomalously large. The physical reason for such behavior is that the nonlinear contribution is dominated by a small group of close impurity pairs having one electron per pair. Since the group is small, it is strongly influenced by the field. An external magnetic field strongly influences the absorption by changing the overlap between the pair components' wave functions. It is important that the influence is substantially different for the linear and nonlinear contributions. This property provides an additional tool to extract nonlinear effects.
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Submitted 10 May, 2000; v1 submitted 2 May, 2000;
originally announced May 2000.
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Nonlinear acoustic and microwave absorption in glasses
Authors:
M. Kirkengen,
Yu. M. Galperin
Abstract:
A theory of weakly-nonlinear low-temperature relaxational absorption of acoustic and electromagnetic waves in dielectric and metallic glasses is developed. Basing upon the model of two-level tunneling systems we show that the nonlinear contribution to the absorption can be anomalously large. This is the case at low enough frequencies, where freqeuency times the minimal relaxation time for the tw…
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A theory of weakly-nonlinear low-temperature relaxational absorption of acoustic and electromagnetic waves in dielectric and metallic glasses is developed. Basing upon the model of two-level tunneling systems we show that the nonlinear contribution to the absorption can be anomalously large. This is the case at low enough frequencies, where freqeuency times the minimal relaxation time for the two-level system are much less than one. In dielectric glasses, the lowest-order nonlinear contribution is proportional to the wave's intensity. It is negative and exhibits anomalous frequency and temperature dependencies. In metallic glasses, the nonlinear contribution is also negative, and it is proportional to the square root of the wave's intensity and to the frequency. Numerical estimates show that the predicted nonlinear contribution can be measured experimentally.
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Submitted 24 April, 1997;
originally announced April 1997.