Electron and Hole Photoemission Detection for Band Offset Determination of Tunnel Field-Effect Transistor Heterojunctions
Authors:
Wei Li,
Qin Zhang,
R. Bijesh,
Oleg A. Kirillov,
Yiran Liang,
Igor Levin,
Lian-Mao Peng,
Curt A. Richter,
Xuelei Liang,
S. Datta,
David J. Gundlach,
N. V. Nguyen
Abstract:
The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at the heterojunction interface. We report here on experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect t…
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The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at the heterojunction interface. We report here on experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode in a traditional internal photoemission measurement, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al2O3/InAs/GaSb layer structure, the barrier height from the top of InAs and GaSb valence band to the bottom of Al2O3 conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of Al2O3 valence band to the bottom of InAs and GaSb conduction band. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted model of electron quantum tunneling efficiency and transistor performance.
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Submitted 4 October, 2014;
originally announced October 2014.
Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Authors:
Rusen Yan,
Qin Zhang,
Oleg A. Kirillov,
Wei Li,
James Basham,
Alex Boosalis,
Xuelei Liang,
Debdeep Jena,
Curt A. Richter,
Alan Seabaugh,
David J. Gundlach,
Huili G. Xing,
N. V. Nguyen
Abstract:
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detectin…
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The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detecting holes injected from a semiconductor emitter in IPE measurements. The observed electron and hole barrier heights are 3.5 eV and 4.1 eV, respectively. Thus the bandgap of Al2O3 can be further deduced to be 6.5 eV, in close agreement with the valued obtained by vacuum ultraviolet spectroscopic ellipsometry analysis. The detailed optical modeling of a graphene/Al2O3/Si stack reveals that by using graphene in IPE measurements the carrier injection from the emitter is significantly enhanced and the contribution of carrier injection from the collector electrode is minimal. The method can be readily extended to various IPE test structures for a complete band alignment analysis and interface characterization.
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Submitted 5 August, 2013; v1 submitted 20 December, 2012;
originally announced December 2012.
