Showing 1–3 of 3 results for author: Kirby, C

Disentangling superconductor and dielectric microwave losses in sub-micron $\rm Nb$/$\rm TEOS-SiO_2$ interconnects using a multi-mode microstrip resonator

Authors: Cougar A. T. Garcia, Nancyjane Bailey, Chris Kirby, Joshua A. Strong, Anna Yu. Herr, Steven M. Anlage, Vladimir V. Talanov

Abstract: Understanding the origins of power loss in superconducting interconnects is essential for the energy efficiency and scalability of superconducting digital logic. At microwave frequencies, power dissipates in both the dielectrics and superconducting wires, and these losses can be of comparable magnitude. A novel method to accurately disentangle such losses by exploiting their frequency dependence u… ▽ More Understanding the origins of power loss in superconducting interconnects is essential for the energy efficiency and scalability of superconducting digital logic. At microwave frequencies, power dissipates in both the dielectrics and superconducting wires, and these losses can be of comparable magnitude. A novel method to accurately disentangle such losses by exploiting their frequency dependence using a multi-mode transmission line resonator, supported by a geometric factor concept and a 3D superconductor finite element method (FEM) modeling, is described. Using the method we optimized a planarized fabrication process of reciprocal quantum logic (RQL) for the interconnect loss at 4.2 K and GHz frequencies. The interconnects are composed of niobium ($\rm Nb$) insulated by silicon dioxide made with a tetraethyl orthosilicate precursor ($\rm TEOS-SiO_2$). Two process generations use damascene fabrication, and the third one uses Cloisonné fabrication. For all three, $\rm TEOS-SiO_2$ exhibits a dielectric loss tangent $\tan δ= 0.0012 \pm 0.0001$, independent of $\rm Nb$ wire width over $0.25 - 4 \: μm$. The $\rm Nb$ loss varies with both the processing and the wire width. For damascene fabrication, scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDS) reveal that Nb oxide and Nb grain growth orientation increase the loss above the Bardeen Cooper Schrieffer (BCS) minimum theoretical resistance $R _{BCS}$. For Cloisonné fabrication, the $0.25 \: μm$ wide $\rm Nb$ wires exhibit an intrinsic resistance $R_s = 13 \pm 1.4 \: μΩ$ at 10 GHz, which is below $R_{BCS} \approx 17 \: μΩ$. That is arguably the lowest resistive loss reported for $\rm Nb$. △ Less

Submitted 19 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. Applied 21, 024056 (2024)

Experimental demonstration of a Josephson magnetic memory cell with a programmable π-junction

Authors: I. M. Dayton, T. Sage, E. C. Gingrich, M. G. Loving, T. F. Ambrose, N. P. Siwak, S. Keebaugh, C. Kirby, D. L. Miller, A. Y. Herr, Q. P. Herr, O. Naaman

Abstract: We experimentally demonstrate the operation of a Josephson magnetic random access memory unit cell, built with a Ni_80Fe_20/Cu/Ni pseudo spin-valve Josephson junction with Nb electrodes and an integrated readout SQUID in a fully planarized Nb fabrication process. We show that the parallel and anti-parallel memory states of the spin-valve can be mapped onto a junction equilibrium phase of either ze… ▽ More We experimentally demonstrate the operation of a Josephson magnetic random access memory unit cell, built with a Ni_80Fe_20/Cu/Ni pseudo spin-valve Josephson junction with Nb electrodes and an integrated readout SQUID in a fully planarized Nb fabrication process. We show that the parallel and anti-parallel memory states of the spin-valve can be mapped onto a junction equilibrium phase of either zero or pi by appropriate choice of the ferromagnet thicknesses, and that the magnetic Josephson junction can be written to either a zero-junction or pi-junction state by application of write fields of approximately 5 mT. This work represents a first step towards a scalable, dense, and power-efficient cryogenic memory for superconducting high-performance digital computing. △ Less

Submitted 1 February, 2018; v1 submitted 5 November, 2017; originally announced November 2017.

Comments: 5 pages, 5 figures, accepted by IEEE Magnetics Letters

Journal ref: IEEE Magnetics Letters 9(1), 3301905 (2018)

On-Chip Josephson Junction Microwave Switch

Authors: O. Naaman, M. O. Abutaleb, C. Kirby, M. Rennie

Abstract: The authors report on the design and measurement of a reflective single-pole single-throw microwave switch with no internal power dissipation, based on a superconducting circuit containing a single Josephson junction. The data demonstrate the switch operation with 2 GHz instantaneous bandwidth centered at 10 GHz, low insertion loss, and better than 20 dB on/off ratio. The switch's measured perform… ▽ More The authors report on the design and measurement of a reflective single-pole single-throw microwave switch with no internal power dissipation, based on a superconducting circuit containing a single Josephson junction. The data demonstrate the switch operation with 2 GHz instantaneous bandwidth centered at 10 GHz, low insertion loss, and better than 20 dB on/off ratio. The switch's measured performance agrees well with simulations for input powers up to -100 dBm. An extension of the demonstrated circuit to implement a single-pole double-throw switch is shown in simulation. △ Less

Submitted 4 December, 2015; originally announced December 2015.

Journal ref: Appl. Phys. Lett. 108, 112601 (2016)