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Silicon nanoantennas for tailoring the optical properties of MoS2 monolayers
Authors:
Danae Katrisioti,
Peter R. Wiecha,
Aurélien Cuche,
Sotiris Psilodimitrakopoulos,
Guilhem Larrieu,
Jonas Müller,
Vincent Larrey,
Bernhard Urbaszek,
Xavier Marie,
Emmanuel Stratakis,
George Kioseoglou,
Vincent Paillard,
Jean-Marie Poumirol,
Ioannis Paradisanos
Abstract:
Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a three-fold enhancement in photoluminescence and an excitation-wavelength-dependent emissi…
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Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a three-fold enhancement in photoluminescence and an excitation-wavelength-dependent emission that aligns with Mie-resonant modes. Raman spectroscopy reveals an up to 8-fold enhancement in the vibrational modes of MoS2, while second-harmonic generation exhibits a 20 to 30-fold increase in efficiency, closely correlating with the presence of the underlying nanoantennas. Our experiments and simulations quantify the tunable benefits of the near-field interactions, taking into account thin-film interference and strain-induced effects. Our findings present dielectric nanoantennas as a promising platform for tailoring linear and nonlinear optical properties in 2D materials, with potential applications in nanophotonic devices and integrated photonics.
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Submitted 4 April, 2025;
originally announced April 2025.
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Spin-valley polarization control in WSe$_2$ monolayers using photochemical doping
Authors:
E. Katsipoulaki,
K. Mourzidis,
V. Jindal,
D. Lagarde,
T. Taniguchi,
K. Watanabe,
G. Kopidakis,
X. Marie,
M. M. Glazov,
E. Stratakis,
G. Kioseoglou,
I. Paradisanos
Abstract:
We report on the influence of a photochemical doping method on the spin-valley polarization degree ($P_{c}$) of excitons in WSe$_2$ monolayers. By varying the carrier density and transitioning from an excess of electrons (n-type) to an excess of holes (p-type), we observe a non-monotonic dependence of $P_{c}$ on the doping level. Using controlled, single-shot photochlorination steps, we unveil thi…
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We report on the influence of a photochemical doping method on the spin-valley polarization degree ($P_{c}$) of excitons in WSe$_2$ monolayers. By varying the carrier density and transitioning from an excess of electrons (n-type) to an excess of holes (p-type), we observe a non-monotonic dependence of $P_{c}$ on the doping level. Using controlled, single-shot photochlorination steps, we unveil this non-monotonic behavior, with $P_{c}$ reaching a minimum value of less than 10$\%$ at 78 K near the charge neutrality point, while increasing by a factor of three at a hole density of $5 \times 10^{11} \,\mathrm{cm^{-2}}$. The impact of the doping on $P_{c}$ is explained using a phenomenological model that accounts for various mechanisms influencing exciton polarization dynamics, including exciton-carrier scattering processes and exciton-to-trion conversion rates. Among these, exciton-carrier collisions emerge as the dominant mechanism driving the observed variations in $P_{c}$, while the exciton effective lifetime remains nearly independent of doping. These findings highlight the potential of photochemical methods for investigating valley physics and for effectively tuning the exciton polarization degree in transition metal dichalcogenide monolayers.
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Submitted 5 February, 2025;
originally announced February 2025.
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Anisotropic Third Harmonic Generation in Two-Dimensional Tin Sulfide
Authors:
George Miltos Maragkakis,
Sotiris Psilodimitrakopoulos,
Leonidas Mouchliadis,
Abdus Salam Sarkar,
Andreas Lemonis,
George Kioseoglou,
Emmanuel Stratakis
Abstract:
The in-plane anisotropic properties of two-dimensional (2D) group IV monochalcogenides provide an additional degree of freedom which can be used in future optoelectronic devices. Here, it is shown that the third harmonic generation (THG) signal produced by ultrathin tin (II) sulfide (SnS) is in-plane anisotropic with respect to the incident linear polarization of the laser field. We fit the experi…
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The in-plane anisotropic properties of two-dimensional (2D) group IV monochalcogenides provide an additional degree of freedom which can be used in future optoelectronic devices. Here, it is shown that the third harmonic generation (THG) signal produced by ultrathin tin (II) sulfide (SnS) is in-plane anisotropic with respect to the incident linear polarization of the laser field. We fit the experimental polarization-resolved THG (P-THG) measurements with a nonlinear optics model, which accounts for the orthorhombic crystal structure of 2D SnS. We calculate the relative magnitudes of the \{chi}^(3) tensor components by recording and simultaneously fitting both orthogonal components of the P-THG intensity. Furthermore, we introduce a THG anisotropy ratio, whose calculated values compare the total THG intensity when the excitation linear polarization is along the armchair crystallographic direction with the case when it is along the zigzag direction. Our results provide quantitative information on the anisotropic nature of the THG process in SnS, paving the way to a better understanding of anisotropic nonlinear light-matter interactions, and the development of polarization-sensitive nonlinear optical devices.
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Submitted 27 May, 2024;
originally announced May 2024.
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Strain distribution in WS2 monolayers detected through Polarization-resolved Second Harmonic Generation
Authors:
George Kourmoulakis,
Sotiris Psilodimitrakopoulos,
George Miltos Maragkakis,
Leonidas Mouchliadis,
Antonios Michail,
Joseph A Christodoulides,
Manoj Tripathi,
Alan B Dalton,
John Parthenios,
Konstantinos Papagelis,
Emmanuel Stratakis,
George Kioseoglou
Abstract:
Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. Nevertheless, GRMs result distinct properties under the influence of the substrate that serves as support through uneven compression/ elongation of GRMs surface atoms. Strain in GRM monolayers is the most common feature that alters the interatomic distances, band structure, providi…
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Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. Nevertheless, GRMs result distinct properties under the influence of the substrate that serves as support through uneven compression/ elongation of GRMs surface atoms. Strain in GRM monolayers is the most common feature that alters the interatomic distances, band structure, providing a new degree of freedom that allows regulation of their electronic properties and introducing the field of straintronics. Having an all-optical detection, a minimally invasive tool that rapidly probes strain in large areas of GRM monolayers, would be of great importance in the research and development of novel 2D devices. Here, we use Polarization-resolved Second Harmonic Generation (P-SHG) optical imaging to identify strain distribution, induced in a single layer of WS2 placed on a pre-patterned Si/SiO2 substrate with cylindrical wells. By fitting the P-SHG data pixel-by-pixel, we produce spatially resolved images of the crystal armchair direction. In regions where the WS2 monolayer conforms to the pattern topography, a distinct cross-shaped pattern is evident in the armchair image owing to strain. The presence of strain in these regions is independently confirmed using a combination of atomic force microscopy and Raman mapping.
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Submitted 28 March, 2024;
originally announced March 2024.
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Biaxial strain tuning of exciton energy and polarization in monolayer WS2
Authors:
G. Kourmoulakis,
A. Michail,
I. Paradisanos,
X. Marie,
M. M. Glazov,
B. Jorissen,
L. Covaci,
E. Stratakis,
K. Papagelis,
J. Parthenios,
G. Kioseoglou
Abstract:
We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of -130 meV per % of strain is observed in the neutral exciton emission at room temperature. Under near-resonant excitation we measure a monotonic decrease in the circular polarization degree under applied strain. We exper…
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We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of -130 meV per % of strain is observed in the neutral exciton emission at room temperature. Under near-resonant excitation we measure a monotonic decrease in the circular polarization degree under applied strain. We experimentally separate the effect of the strain-induced energy detuning and evaluate the pure effect coming from biaxial strain. The analysis shows that the suppression of the circular polarization degree under biaxial strain is related to an interplay of energy and polarization relaxation channels as well as to variations in the exciton oscillator strength affecting the long-range exchange interaction.
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Submitted 24 July, 2023;
originally announced July 2023.
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Electron density control in tungsten diselenide monolayers via photochlorination
Authors:
E. Katsipoulaki,
G. Vailakis,
I. Demeridou,
D. Karfaridis,
P. Patsalas,
K. Watanabe,
T. Taniguchi,
I. Paradisanos,
G. Kopidakis,
G. Kioseoglou,
E. Stratakis
Abstract:
Modulation of the Fermi level using an ultraviolet (UV)-assisted photochemical method is demonstrated in tungsten diselenide monolayers. Systematic shifts and relative intensities between charged and neutral exciton species indicate a progressive and controllable decrease of the electron density and switch tungsten diselenide from n-type to a p-type semiconductor. The presence of chlorine in the 2…
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Modulation of the Fermi level using an ultraviolet (UV)-assisted photochemical method is demonstrated in tungsten diselenide monolayers. Systematic shifts and relative intensities between charged and neutral exciton species indicate a progressive and controllable decrease of the electron density and switch tungsten diselenide from n-type to a p-type semiconductor. The presence of chlorine in the 2D crystal shifts the Fermi level closer to the valence band while the effect can be only partially reversible via continuous wave laser rastering process. The presence of chlorine species in the lattice is validated by X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations predict that adsorption of chlorine on the selenium vacancy sites leads to p-type doping. The results of our study indicate that photochemical techniques have the potential to enhance the performance of various 2D materials, making them suitable for potential applications in optoelectronics.
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Submitted 11 May, 2023;
originally announced May 2023.
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Nonlinear optical imaging of in-plane anisotropy in two-dimensional SnS
Authors:
G. M. Maragkakis,
S. Psilodimitrakopoulos,
L. Mouchliadis,
A. S. Sarkar,
A. Lemonis,
G. Kioseoglou,
E. Stratakis
Abstract:
Two-dimensional (2D) tin(II) sulfide (SnS) crystals belong to a class of orthorhombic semiconducting materials that are lately attracting significant interest, given their remarkable properties, such as in-plane anisotropic optical and electronic response, multiferroic nature and lack of inversion symmetry. The 2D SnS crystals exhibit anisotropic response along the in-plane armchair (AC) and zigza…
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Two-dimensional (2D) tin(II) sulfide (SnS) crystals belong to a class of orthorhombic semiconducting materials that are lately attracting significant interest, given their remarkable properties, such as in-plane anisotropic optical and electronic response, multiferroic nature and lack of inversion symmetry. The 2D SnS crystals exhibit anisotropic response along the in-plane armchair (AC) and zigzag (ZZ) crystallographic directions, offering an additional degree of freedom in manipulating their behavior. Therefore, calculating the AC/ZZ directions is important in characterizing the 2D SnS crystals. In this work, we take advantage of the lack of inversion symmetry of the 2D SnS crystal, that produces second harmonic generation (SHG), to perform polarization-resolved SHG (P-SHG) nonlinear imaging of the in-plane anisotropy. We fit the P-SHG experimental data with a nonlinear optics model, that allows us to calculate the AC/ZZ orientation from every point of the 2D crystal and to map with high-resolution the AC/ZZ direction of several 2D SnS flakes belonging in the same field of view. It is found that the P-SHG intensity polar patterns are associated with the crystallographic axes of the flakes and with the relative strength of the second order nonlinear susceptibility tensor in different directions. Therefore, our method provides quantitative information of the optical in-plane anisotropy of orthorhombic 2D crystals, offering great promise for performance characterization during device operation in the emerging optoelectronic applications of such crystals.
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Submitted 9 December, 2021;
originally announced December 2021.
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Optical versus electron diffraction imaging of Twist-angle in 2D transition metal dichalcogenide bilayer superlattices
Authors:
S. Psilodimitrakopoulos,
A. Orekhov,
L. Mouchliadis,
D. Jannis,
G. M. Maragkakis,
G. Kourmoulakis,
N. Gauquelin,
G. Kioseoglou,
J. Verbeeck,
E. Stratakis
Abstract:
Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between the two monolayers, coined as twist-angle, modifies the crystal symmetry and creates a superlattice with exciting properties. Here, we demonstrate an all-optical…
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Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between the two monolayers, coined as twist-angle, modifies the crystal symmetry and creates a superlattice with exciting properties. Here, we demonstrate an all-optical method for pixel-by-pixel mapping of the twist-angle with resolution of 0.23 degrees, via polarization-resolved second harmonic generation (P-SHG) microscopy and we compare it with four-dimensional scanning transmission electron microscopy (4D-STEM). It is found that the twist-angle imaging of WS2 bilayers, using the P-SHG technique is in excellent agreement with that obtained using electron diffraction. The main advantages of the optical approach are that the characterization is performed on the same substrate that the device is created on and that it is three orders of magnitude faster than the 4D-STEM. We envisage that the optical P-SHG imaging could become the gold standard for the quality examination of TMD superlattice-based devices.
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Submitted 12 April, 2021;
originally announced April 2021.
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Wide field of view crystal orientation mapping of layered materials
Authors:
A. Orekhov,
D. Jannis,
N. Gauquelin,
G. Guzzinati,
A. Nalin Mehta,
S. Psilodimitrakopoulos,
L. Mouchliadis,
P. K. Sahoo,
I. Paradisanos,
A. C. Ferrari,
G. Kioseoglou,
E. Stratakis,
J. Verbeeck
Abstract:
Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropic deformations, etc. are detrimental for most (opto)electronic applications. Here, we present a set-up able to transform a conventional scanning elect…
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Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropic deformations, etc. are detrimental for most (opto)electronic applications. Here, we present a set-up able to transform a conventional scanning electron microscope into a tool for structural analysis of a wide range of LMs. An hybrid pixel electron detector below the sample makes it possible to record two dimensional (2d) diffraction patterns for every probe position on the sample surface (2d), in transmission mode, thus performing a 2d+2d=4d STEM (scanning transmission electron microscopy) analysis. This offers a field of view up to 2 mm2, while providing spatial resolution in the nm range, enabling the collection of statistical data on grain size, relative orientation angle, bilayer stacking, strain, etc. which can be mined through automated open-source data analysis software. We demonstrate this approach by analyzing a variety of LMs, such as mono- and multi-layer graphene, graphene oxide and MoS2, showing the ability of this method to characterize them in the tens of nm to mm scale. This wide field of view range and the resulting statistical information are key for large scale applications of LMs.
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Submitted 3 November, 2020;
originally announced November 2020.
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Probing valley population imbalance in transition metal dichalcogenides via temperature-dependent second harmonic generation imaging
Authors:
Leonidas Mouchliadis,
Sotiris Psilodimitrakopoulos,
George Miltos Maragkakis,
Ioanna Demeridou,
George Kourmoulakis,
Andreas Lemonis,
George Kioseoglou,
Emmanuel Stratakis
Abstract:
Degenerate minima in momentum space - valleys - provide an additional degree of freedom that can be used for information transport and storage. Notably, such minima naturally exist in the band structure of transition metal dichalcogenides (TMDs). When these atomically thin crystals interact with intense laser light, the second harmonic generated (SHG) field inherits special characteristics that re…
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Degenerate minima in momentum space - valleys - provide an additional degree of freedom that can be used for information transport and storage. Notably, such minima naturally exist in the band structure of transition metal dichalcogenides (TMDs). When these atomically thin crystals interact with intense laser light, the second harmonic generated (SHG) field inherits special characteristics that reflect not only the broken inversion symmetry in real space, but also the valley anisotropy in reciprocal space. The latter is present whenever there exists a valley population imbalance (VPI) between the two valleys. In this work, it is shown that the temperature-induced changes of the SHG intensity dependence on the excitation fieldpolarization, is a unique fingerprint of VPI in TMDs. Analysis of such changes, in particular, enables the calculation of the valley-induced to intrinsic second order susceptibilities ratio. Unlike temperature-dependent photoluminescence (PL) measurements of valley polarization and coherence, the proposed polarization resolved SHG (PSHG) methodology is insensitive to the excitation field wavelength, an advantage that renders it ideal for monitoring VPI in large crystalline or stacked areas comprising different TMDs.
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Submitted 26 June, 2020;
originally announced June 2020.
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Robust B-exciton emission at room temperature in few-layers of MoS2:Ag nanoheterojunctions embedded into a glass matrix
Authors:
Abdus Salam Sarkar,
Ioannis Konidakis,
Ioanna Demeridou,
Efthymis Serpetzoglou,
George Kioseoglou,
Emmanuel Stratakis
Abstract:
Tailoring the photoluminescence (PL) properties in two-dimensional (2D) molybdenum disulfide (MoS2) crystals using external factors is critical for its use in valleytronic, nanophotonic and optoelectronic applications. Although significant effort has been devoted towards enhancing or manipulating the excitonic emission in MoS2 monolayers, the excitonic emission in few-layers MoS2 has been largely…
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Tailoring the photoluminescence (PL) properties in two-dimensional (2D) molybdenum disulfide (MoS2) crystals using external factors is critical for its use in valleytronic, nanophotonic and optoelectronic applications. Although significant effort has been devoted towards enhancing or manipulating the excitonic emission in MoS2 monolayers, the excitonic emission in few-layers MoS2 has been largely unexplored. Here, we put forward a novel nano-heterojunction system, prepared with a non-lithographic process, to enhance and control such emission. It is based on the incorporation of few-layers MoS2 into a plasmonic silver metaphosphate glass (AgPO3) matrix. It is shown that, apart from the enhancement of the emission of both A and B excitons, the B-excitonic emission dominates the PL intensity. In particular, we observe an almost six-fold enhancement of the B exciton emission, compared to control MoS2 samples. This enhanced PL at room temperature is attributed to an enhanced exciton-plasmon coupling and it is supported by ultrafast time-resolved spectroscopy that reveals plasmon-enhanced electron transfer that takes place in Ag nanoparticles-MoS2 nanoheterojunctions. Our results provide a great avenue to tailor the emission properties of few-layers MoS2, which could find application in emerging valleytronic devices working with B excitons.
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Submitted 22 October, 2020; v1 submitted 6 May, 2020;
originally announced May 2020.
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Prominent room temperature valley polarization in WS2/graphene heterostructures grown by chemical vapor deposition
Authors:
Ioannis Paradisanos,
Kathleen M. McCreary,
Davoud Adinehloo,
Leonidas Mouchliadis,
Jeremy T. Robinson,
Hsun-Jen Chuang,
Aubrey T. Hanbicki,
Vasili Perebeinos,
Berend T. Jonker,
Emmanuel Stratakis,
George Kioseoglou
Abstract:
We examine different cases of heterostructures consisting of WS2 monolayers grown by chemical vapor deposition (CVD) as the optically active material. We show that the degree of valley polarization of WS2 is considerably influenced by the material type used to form the heterostructure. Our results suggest the interaction between WS2 and graphene (WS2/Gr) has a strong effect on the temperature depe…
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We examine different cases of heterostructures consisting of WS2 monolayers grown by chemical vapor deposition (CVD) as the optically active material. We show that the degree of valley polarization of WS2 is considerably influenced by the material type used to form the heterostructure. Our results suggest the interaction between WS2 and graphene (WS2/Gr) has a strong effect on the temperature dependent depolarization (i.e. decrease of polarization with increasing temperature), with polarization degrees reaching 24% at room temperature under near-resonant excitation. This contrasts to hBN- encapsulated WS2, which exhibits a room temperature polarization degree of only 11%. The observed low depolarization rate in WS2/Gr heterostructure is attributed to the nearly temperature independent scattering rate due to phonons and fast charge and energy transfer processes from WS2 to graphene. Significant variations in the degree of polarization are also observed at 4K between the different heterostructure configurations. Intervalley hole scattering in the valence band proximity between the K and Γ points of WS2 is sensitive to the immediate environment, leading to the observed variations.
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Submitted 1 December, 2020; v1 submitted 11 October, 2019;
originally announced October 2019.
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Twist Angle mapping in layered WS2 by Polarization-Resolved Second Harmonic Generation
Authors:
Sotiris Psilodimitrakopoulos,
Leonidas Mouchliadis,
Ioannis Paradisanos,
George Kourmoulakis,
Andreas Lemonis,
George Kioseoglou,
Emmanuel Stratakis
Abstract:
Stacked atomically thin transition metal dichalcogenides (TMDs) exhibit fundamentally new physical properties compared to those of the individual layers. The twist angle between the layers plays a crucial role in tuning these properties. Having a tool that provides highresolution, large area mapping of the twist angle, would be of great importance in the characterization of such 2D structures. Her…
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Stacked atomically thin transition metal dichalcogenides (TMDs) exhibit fundamentally new physical properties compared to those of the individual layers. The twist angle between the layers plays a crucial role in tuning these properties. Having a tool that provides highresolution, large area mapping of the twist angle, would be of great importance in the characterization of such 2D structures. Here we use polarization-resolved second harmonic generation (P-SHG) imaging microscopy to rapidly map the twist angle in large areas of overlapping WS2 stacked layers. The robustness of our methodology lies in the combination of both intensity and polarization measurements of SHG in the overlapping region. This allows the accurate measurement and consequent pixel-by-pixel mapping of the twist angle in this area. For the specific case of 30o twist angle, P-SHG enables imaging of individual layers.
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Submitted 29 July, 2019; v1 submitted 6 March, 2019;
originally announced March 2019.
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Room temperature observation of biexcitons in exfoliated WS2 monolayers
Authors:
I. Paradisanos,
S. Germanis,
N. T. Pelekanos,
C. Fotakis,
E. Kymakis,
G. Kioseoglou,
E. Stratakis
Abstract:
Single layers of WS2 are direct gap semiconductors with high photoluminescence (PL) yield holding great promise for emerging applications in optoelectronics. The spatial confinement in a 2D monolayer together with the weak dielectric screening lead to huge binding energies for the neutral excitons as well as other excitonic complexes, such as trions and biexcitons whose binding energies scale acco…
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Single layers of WS2 are direct gap semiconductors with high photoluminescence (PL) yield holding great promise for emerging applications in optoelectronics. The spatial confinement in a 2D monolayer together with the weak dielectric screening lead to huge binding energies for the neutral excitons as well as other excitonic complexes, such as trions and biexcitons whose binding energies scale accordingly. Here, we report on the existence of biexcitons in mechanically exfoliated WS2 flakes from 78 K up to room temperature. Performing temperature and power dependent PL measurements, we identify the biexciton emission channel through the superlinear behavior of the integrated PL intensity as a function of the excitation power density. On the contrary, neutral and charged excitons show a linear to sublinear dependence in the whole temperature range. From the energy difference between the emission channels of the biexciton and neutral exciton, a biexciton binding energy of 65-70 meV is determined.
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Submitted 8 May, 2017;
originally announced May 2017.
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Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field
Authors:
Chuan Zhao,
Tenzin Norden,
Puqin Zhao,
Yingchun Cheng,
Peiyao Zhang,
Fan Sun,
Payam Taheri,
Jieqiong Wang,
Yihang Yang,
Thomas Scrace,
Kaifei Kang,
Sen Yang,
Guo-xing Miao,
Renat Sabirianov,
George Kioseoglou,
Athos Petrou,
Hao Zeng
Abstract:
Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition metal dichalcogenide (TMDC) with broken inversion symmetry possesses two degenerate yet inequivalent valleys, offering unique opportunities for valley control through helicity of light. Lifting the valley degeneracy by Zeeman splitting has been demons…
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Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition metal dichalcogenide (TMDC) with broken inversion symmetry possesses two degenerate yet inequivalent valleys, offering unique opportunities for valley control through helicity of light. Lifting the valley degeneracy by Zeeman splitting has been demonstrated recently, which may enable valley control by a magnetic field. However, the realized valley splitting is modest, (~ 0.2 meV/T). Here we show greatly enhanced valley spitting in monolayer WSe2, utilizing the interfacial magnetic exchange field (MEF) from a ferromagnetic EuS substrate. A valley splitting of 2.5 meV is demonstrated at 1 T by magneto-reflectance measurements. Moreover, the splitting follows the magnetization of EuS, a hallmark of the MEF. Utilizing MEF of a magnetic insulator can induce magnetic order, and valley and spin polarization in TMDCs, which may enable valleytronic and quantum computing applications.
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Submitted 16 October, 2016;
originally announced October 2016.
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Spatial Non-Uniformity in Exfoliated WS2 Single layers
Authors:
I. Paradisanos,
N. Pliatsikas,
P. Patsalas,
C. Fotakis,
E. Kymakis,
G. Kioseoglou,
E. Stratakis
Abstract:
Monolayers of Transition Metal Dichalcogenides (TMDs) are atomically thin two-dimensional crystals with attractive optoelectronic properties, which are promising for emerging applications in nanophotonics. Here, we report on the extraordinary spatial non-uniformity of the photoluminescence (PL) and strain properties of WS2 monolayers exfoliated from the natural crystal. Specifically, it is shown t…
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Monolayers of Transition Metal Dichalcogenides (TMDs) are atomically thin two-dimensional crystals with attractive optoelectronic properties, which are promising for emerging applications in nanophotonics. Here, we report on the extraordinary spatial non-uniformity of the photoluminescence (PL) and strain properties of WS2 monolayers exfoliated from the natural crystal. Specifically, it is shown that the edges of such monolayers exhibit remarkably enhanced PL intensity compared to their respective central area. A comprehensive analysis of the recombination channels involved in the PL process demonstrates a spatial non-uniformity across the monolayer's surface and reflects on the non-uniformity of the intrinsic electron density across the monolayer. Auger electron imaging and spectroscopy studies complemented with PL measurements in different environments indicate that oxygen chemisorption and physisorption are the two fundamental mechanisms responsible for the observed non-uniformity. At the same time Raman spectroscopy analysis shows remarkable strain variations among the different locations of an individual monolayer, however such variations cannot be strictly correlated with the non-uniform PL emission. Our results shed light on the role of the chemical bonding on the competition between exciton complexes in monolayer WS2, providing a way of engineering new nanophotonic functions using WS2 monolayers. It is therefore envisaged that our findings could find diverse applications towards the development of TMDs-based optoelectronic devices.
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Submitted 24 June, 2016; v1 submitted 25 March, 2016;
originally announced March 2016.
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Optical control of charged exciton states in tungsten disulfide
Authors:
M. Currie,
A. T. Hanbicki,
G. Kioseoglou,
B. T. Jonker
Abstract:
A method is presented for optically preparing WS2 monolayers to luminesce from only the charged exciton (trion) state--completely suppressing the neutral exciton. When isolating the trion state, we observed changes in the Raman A1g intensity and an enhanced feature on the low energy side of the E12g peak. Photoluminescence and optical reflectivity measurements confirm the existence of the prepared…
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A method is presented for optically preparing WS2 monolayers to luminesce from only the charged exciton (trion) state--completely suppressing the neutral exciton. When isolating the trion state, we observed changes in the Raman A1g intensity and an enhanced feature on the low energy side of the E12g peak. Photoluminescence and optical reflectivity measurements confirm the existence of the prepared trion state. This technique also prepares intermediate regimes with controlled luminescence amplitudes of the neutral and charged exciton. This effect is reversible by exposing the sample to air, indicating the change is mitigated by surface interactions with the ambient environment. This method provides a tool to modify optical emission energy and to isolate physical processes in this and other two-dimensional materials.
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Submitted 4 February, 2016;
originally announced February 2016.
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Optical polarization and intervalley scattering in single layers of MoS2 and MoSe2
Authors:
George Kioseoglou,
Aubrey T. Hanbicki,
Marc Currie,
Adam L. Friedman,
Berend T. Jonker
Abstract:
Single layers of MoS2 and MoSe2 were optically pumped with circularly polarized light and an appreciable polarization was initialized as the pump energy was varied. The circular polarization of the emitted photoluminescence was monitored as function of the difference between the excitation energy and the A-exciton emission at the K-point of the Brillouin zone. Our results show a threshold of twice…
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Single layers of MoS2 and MoSe2 were optically pumped with circularly polarized light and an appreciable polarization was initialized as the pump energy was varied. The circular polarization of the emitted photoluminescence was monitored as function of the difference between the excitation energy and the A-exciton emission at the K-point of the Brillouin zone. Our results show a threshold of twice the LA phonon energy, specific to the material, above which phonon-assisted intervalley scattering causes depolarization. In both materials this lead to almost complete depolarization within ~100 meV above the threshold energy. We identify the extra kinetic energy of the exciton (independent of whether it is neutral or charged) as the key parameter for presenting a unifying picture of the depolarization process.
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Submitted 1 February, 2016;
originally announced February 2016.
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Anomalous temperature-dependent spin-valley polarization in monolayer WS$_{2}$
Authors:
Aubrey T. Hanbicki,
George Kioseoglou,
Marc Currie,
C. Stephen Hellberg,
Kathleen M. McCreary,
Adam L. Friedman,
Berend T. Jonker
Abstract:
Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several limitations to such a utility include strong, phonon-enabled intervalley scattering, as well as multiparticle interactions leading to multiple emission channel…
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Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several limitations to such a utility include strong, phonon-enabled intervalley scattering, as well as multiparticle interactions leading to multiple emission channels. We prepare single-layer WS$_{2}$ such that the photoluminescence is from either the neutral or charged exciton (trion). After excitation with circularly polarized light, the neutral exciton emission has zero polarization, however, the trion emission has a large polarization (28%) at room temperature. The trion emission also has a unique, non-monotonic temperature dependence that we show is a consequence of the multiparticle nature of the trion. This temperature dependence enables us to determine that coulomb assisted intervalley scattering, electron-hole radiative recombination, and a 3-particle Auger process are the dominant mechanisms at work in this system. Because this dependence involves trion systems, one can use gate voltages to modulate the polarization (or intensity) emitted from TMD structures.
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Submitted 29 December, 2015;
originally announced December 2015.
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Intense femtosecond photoexcitation of bulk and monolayer MoS2
Authors:
I. Paradisanos,
E. Kymakis,
C. Fotakis,
G. Kioseoglou,
E. Stratakis
Abstract:
The effect of femtosecond laser irradiation on bulk and single-layer MoS2 on silicon oxide is studied. Optical, Field Emission Scanning Electron Microscopy (FESEM) and Raman microscopies were used to quantify the damage. The intensity of A1g and E2g1 vibrational modes was recorded as a function of the number of irradiation pulses. The observed behavior was attributed to laser-induced bond breaking…
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The effect of femtosecond laser irradiation on bulk and single-layer MoS2 on silicon oxide is studied. Optical, Field Emission Scanning Electron Microscopy (FESEM) and Raman microscopies were used to quantify the damage. The intensity of A1g and E2g1 vibrational modes was recorded as a function of the number of irradiation pulses. The observed behavior was attributed to laser-induced bond breaking and subsequent atoms removal due to electronic excitations. The single-pulse optical damage threshold was determined for the monolayer and bulk under 800nm and 1030nm pulsed laser irradiation and the role of two-photon versus one photon absorption effects is discussed.
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Submitted 13 January, 2015;
originally announced January 2015.
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Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2
Authors:
A. T. Hanbicki,
M. Currie,
G. Kioseoglou,
A. L. Friedman,
B. T. Jonker
Abstract:
Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such fundamental properties as exciton binding energies and band gaps. We report here an experimental determination of exciton excited states and binding energies for…
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Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such fundamental properties as exciton binding energies and band gaps. We report here an experimental determination of exciton excited states and binding energies for monolayer WS2 and WSe2. We observe peaks in the optical reflectivity/absorption spectra corresponding to the ground- and excited-state excitons (1s and 2s states). From these features, we determine lower bounds free of any model assumptions for the exciton binding energies as E2sA - E1sA of 0.83 eV and 0.79 eV for WS2 and WSe2, respectively, and for the corresponding band gaps Eg >= E2sA of 2.90 and 2.53 eV at 4K. Because the binding energies are large, the true band gap is substantially higher than the dominant spectral feature commonly observed with photoluminescence. This information is critical for emerging applications, and provides new insight into these novel monolayer semiconductors.
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Submitted 5 December, 2014;
originally announced December 2014.
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Electrical spin injection into Si(001) through a SiO2 tunnel barrier
Authors:
C. H. Li,
G. Kioseoglou,
O. M. J. van t Erve,
P. E. Thompson,
B. T. Jonker
Abstract:
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc, of the electroluminescence (EL) shows that the tunneling spin polarization reflects Fe majority spin. Pcirc tracks the Fe magnetization, confirming that the…
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We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc, of the electroluminescence (EL) shows that the tunneling spin polarization reflects Fe majority spin. Pcirc tracks the Fe magnetization, confirming that the spin-polarized electrons radiatively recombining in the Si originate from the Fe. A rate equation analysis provides a lower bound of 30% for the electron spin polarization in the Si at 5 K.
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Submitted 16 October, 2009;
originally announced October 2009.
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Determination of Interface Atomic Structure and Its Impact on Spin Transport Using Z-Contrast Microscopy and Density-Functional Theory
Authors:
Thomas J. Zega,
Aubrey T. Hanbicki,
Steven C. Erwin,
Igor Zutic,
George Kioseoglou,
Connie H. Li,
Berend T. Jonker,
Rhonda M. Stroud
Abstract:
We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in spin-injection efficiency occurs after a low-temperature anneal, which produces an ordered, coherent interface consisting of a single atomic plane of alternating Fe and A…
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We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in spin-injection efficiency occurs after a low-temperature anneal, which produces an ordered, coherent interface consisting of a single atomic plane of alternating Fe and As atoms. First-principles transport calculations indicate that the increase in spin-injection efficiency is due to the abruptness and coherency of the annealed interface.
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Submitted 8 May, 2006;
originally announced May 2006.
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Electrical Spin Pumping of Quantum Dots at Room Temperature
Authors:
C. H. Li,
G. Kioseoglou,
O. M. J. van t Erve,
M. E. Ware,
D. Gammon,
R. M. Stroud,
B. T. Jonker,
R. Mallory,
M. Yasar,
A. Petrou
Abstract:
We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temper…
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We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid state semiconductor devices.
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Submitted 31 January, 2005;
originally announced January 2005.
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Epitaxial Growth of the Diluted Magnetic Semiconductors CryGe1-y and CryMnxGe1-x-y
Authors:
G. Kioseoglou,
A. T. Hanbicki,
C. H. Li,
S. C. Erwin,
R. Goswami,
B. T. Jonker
Abstract:
We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p-type, and hole densities increase with Cr concentration. The CryGe1-y system remains paramagnetic for the growth conditions and low Cr concentrations emp…
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We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p-type, and hole densities increase with Cr concentration. The CryGe1-y system remains paramagnetic for the growth conditions and low Cr concentrations employed (y < 0.04), consistent with density functional theory predictions. Addition of Cr into the ferromagnetic semiconductor MnxGe1-x host systematically reduces the Curie temperature and total magnetization.
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Submitted 12 February, 2003;
originally announced February 2003.
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Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
Authors:
A. T. Hanbicki,
O. M. J. van t Erve,
R. Magno,
G. Kioseoglou,
C. H. Li,
B. T. Jonker,
G. Itskos,
R. Mallory,
M. Yasar,
A. Petrou
Abstract:
Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step tunneling is the dominant transport mechanism. The current-voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and…
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Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step tunneling is the dominant transport mechanism. The current-voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like longitudinal-optical phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses indicating that tunneling enables significant spin injection from a metal into a semiconductor.
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Submitted 11 February, 2003;
originally announced February 2003.
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Reduction Of Spin Injection Efficiency by Interface Spin Scattering
Authors:
R. M. Stroud,
A. T. Hanbicki,
Y. D. Park,
A. G. Petukhov,
B. T. Jonker,
G. Itskos,
G. Kioseoglou,
M. Furis,
A. Petrou
Abstract:
We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering.…
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We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering. An inverse correlation between spin-polarized electron injection efficiency and interface defect density is demonstrated for ZnMnSe/AlGaAs-GaAs spin-LEDs with spin injection efficiencies of 0 to 85%.
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Submitted 26 October, 2001;
originally announced October 2001.
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Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
Authors:
Aubrey T. Hanbicki,
B. T. Jonker,
G. Itskos,
G. Kioseoglou,
A. Petrou
Abstract:
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circu…
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We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency. This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology.
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Submitted 28 January, 2002; v1 submitted 2 October, 2001;
originally announced October 2001.
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Internal Transitions of Two-Dimensional Charged Magneto-Excitons X-: Theory and Experiment
Authors:
A. B. Dzyubenko,
A. Yu. Sivachenko,
H. A. Nickel,
T. M. Yeo,
G. Kioseoglou,
B. D. McCombe,
A. Petrou
Abstract:
Internal spin-singlet and spin-triplet transitions of charged excitons X- in magnetic fields in quantum wells have been studied experimentally and theoretically. The allowed X- transitions are photoionizing and exhibit a characteristic double-peak structure, which reflects the rich structure of the magnetoexciton continua in higher Landau levels (LL's). We discuss a novel exact selection rule, a…
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Internal spin-singlet and spin-triplet transitions of charged excitons X- in magnetic fields in quantum wells have been studied experimentally and theoretically. The allowed X- transitions are photoionizing and exhibit a characteristic double-peak structure, which reflects the rich structure of the magnetoexciton continua in higher Landau levels (LL's). We discuss a novel exact selection rule, a hidden manifestation of translational invariance, that governs transitions of charged mobile complexes in a magnetic field.
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Submitted 8 July, 1999;
originally announced July 1999.
