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New horizons in near-zero refractive index photonics and hyperbolic metamaterials
Authors:
Michaël Lobet,
Nathaniel Kinsey,
Iñigo Liberal,
Humeyra Caglayan,
Paloma A. Huidobro,
Emanuele Galiffi,
Jorge Ricardo Mejía-Salazar,
Giovanna Palermo,
Zubin Jacob,
Nicolò Maccaferri
Abstract:
The engineering of the spatial and temporal properties of both the electric permittivity and the refractive index of materials is at the core of photonics. When vanishing to zero, those two variables provide new knobs to control light-matter interactions. This perspective aims at providing an overview of the state of the art and the challenges in emerging research areas where the use of near-zero…
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The engineering of the spatial and temporal properties of both the electric permittivity and the refractive index of materials is at the core of photonics. When vanishing to zero, those two variables provide new knobs to control light-matter interactions. This perspective aims at providing an overview of the state of the art and the challenges in emerging research areas where the use of near-zero refractive index and hyperbolic metamaterials is pivotal, in particular light and thermal emission, nonlinear optics, sensing applications and time-varying photonics.
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Submitted 14 July, 2023; v1 submitted 2 June, 2023;
originally announced June 2023.
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Plasmonic Titanium Nitride via Atomic Layer Deposition: A Low-Temperature Route
Authors:
Dhruv Fomra,
Ray Secondo,
Kai Ding,
Vitaliy Avrutin,
Natalia Izyumskaya,
Ümit Özgür,
Nathaniel Kinsey
Abstract:
To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic layer deposition (PE-ALD). TiN with low losses and high metallicity was achieved at temperatures below 500°C, by exploring the effects of chemisorption time, sub…
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To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic layer deposition (PE-ALD). TiN with low losses and high metallicity was achieved at temperatures below 500°C, by exploring the effects of chemisorption time, substrate temperature and plasma exposure time on material properties. Reduction in chemisorption time mitigates premature precursor decomposition at T_S > 375°C , and a trade-off between reduced impurity concentration and structural degradation caused by plasma bombardment is achieved for 25s plasma exposure. 85 nm thick TiN films grown at a substrate temperature of 450°C, compatible with CMOS processes, with 0.5s chemisorption time and 25s plasma exposure exhibited a high plasmonic figure of merit (|ε^'/ε^''|) of 2.8 and resistivity of 31 μΩ-cm. These TiN thin films fabricated with subwavelength apertures were shown to exhibit extraordinary transmission.
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Submitted 14 October, 2019;
originally announced January 2020.
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Controlling the plasmonic properties of ultrathin TiN films at the atomic level
Authors:
Deesha Shah,
Alessandra Catellani,
Harsha Reddy,
Nathaniel Kinsey,
Vladimir Shalaev,
Alexandra Boltasseva,
Arrigo Calzolari
Abstract:
By combining first principles theoretical calculations and experimental optical and structural characterization such as spectroscopic ellipsometry, X-ray spectroscopy, and electron microscopy, we study the dielectric permittivity and plasmonic properties of ultrathin TiN films at an atomistic level. Our results indicate a remarkably persistent metallic character of ultrathin TiN films and a progre…
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By combining first principles theoretical calculations and experimental optical and structural characterization such as spectroscopic ellipsometry, X-ray spectroscopy, and electron microscopy, we study the dielectric permittivity and plasmonic properties of ultrathin TiN films at an atomistic level. Our results indicate a remarkably persistent metallic character of ultrathin TiN films and a progressive red shift of the plasmon energy as the thickness of the film is reduced. The microscopic origin of this trend is interpreted in terms of the characteristic two-band electronic structure of the system. Surface oxidation and substrate strain are also investigated to explain the deviation of the optical properties from the ideal case. This paves the way to the realization of ultrathin TiN films with tailorable and tunable plasmonic properties in the visible range for applications in ultrathin metasurfaces and flexible optoelectronic devices.
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Submitted 17 December, 2017;
originally announced December 2017.
