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Quantum Bit Behavior of Pinned Fluxes on Volume Defects in a Superconductor
Authors:
H. B. Lee,
G. C. Kim,
Byeong-Joo Kim,
Young Jin Sohn,
Y. C. Kim
Abstract:
We studied a qubit based on flux-pinning effects in $Δ$H=$Δ$B region of a superconductor. When volume defects are many enough in a superconductor, $Δ$H=$Δ$B region on M-H curve is formed, which is the region that increased applied magnetic field ($Δ$H) is the same as increasing magnetic induction ($Δ$B). Magnetization (M) is constant in the region by 4$π$M = B - H. Here we show that the behavior o…
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We studied a qubit based on flux-pinning effects in $Δ$H=$Δ$B region of a superconductor. When volume defects are many enough in a superconductor, $Δ$H=$Δ$B region on M-H curve is formed, which is the region that increased applied magnetic field ($Δ$H) is the same as increasing magnetic induction ($Δ$B). Magnetization (M) is constant in the region by 4$π$M = B - H. Here we show that the behavior of fluxes in $Δ$H=$Δ$B region can be a candidate of qubit. Pinned fluxes on volume defects would move as a bundle in the region by repeating flux-pinning and pick-out depinning process from the surface to the center of the superconductor. During the process, magnetic fluxes would exist as one of states that are flux-pinning state at volume defects and pick-out depinning state in which fluxes are moving in the superconductor. A difference of diamagnetic property occurs between pinning state at volume defects and depinning state from the volume defects. Thus, diamagnetic properties of the superconductor would oscillate in $Δ$H=$Δ$B region and the behavior would be observed in M-H curve. The oscillation can be used for qubit by setting the pinning state at volume defects as $\ket{1}$ and the depinned state as $\ket{0}$. This method can operate at higher temperatures than that of using Josephson Junctions. In addition, it is expected that the device is quite simple and decoherences can be almost negligible.
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Submitted 16 January, 2022;
originally announced January 2022.
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Flux-Pinning Behaviors and Mechanism According to Dopant Level in (Fe, Ti) Paticle-Doped MgB$_2$ Superconductor
Authors:
H. B. Lee,
G. C. Kim,
Young Jin Shon,
Dongjin Kim,
Y. C. Kim
Abstract:
We have studied flux-pinning effects of MgB$_2$ superconductor by doping (Fe, Ti) particles of which radius is 163 nm on average. 5 wt.\% (Fe, Ti) doped MgB$_2$ among the specimens showed the best field dependence of magnetization and 25 wt.\% one did the worst at 5 K . The difference of field dependence of magnetization of the two increased as temperature increased. Here we show experimental resu…
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We have studied flux-pinning effects of MgB$_2$ superconductor by doping (Fe, Ti) particles of which radius is 163 nm on average. 5 wt.\% (Fe, Ti) doped MgB$_2$ among the specimens showed the best field dependence of magnetization and 25 wt.\% one did the worst at 5 K . The difference of field dependence of magnetization of the two increased as temperature increased. Here we show experimental results of (Fe, Ti) particle-doped MgB$_2$ according to dopant level and the causes of the behaviors. Flux-pinning effect of volume defects-doped superconductor was modeled in ideal state. During the study, we had to divide M-H curve of volume defect-dominating superconductor as three discreet regions for analyzing flux pinning effects, which are diamagnetic increase region, $Δ$H=$Δ$B region, and diamagnetic decrease region. As a result, flux-pinning effects of volume defects decreased as dopant level increased over the optimal dopant level, which was caused by decrease of flux-pinning limit of a volume defect. And similar behaviors are obtained as dopant level decreased below the optimal dopant level, which was caused by the decreased number of volume defects. Comparing the theory with experimental results, deviations increased as dopant level increased over the optimal dopant level, whereas the two was well matched on less dopant level than the optimal dopant level. The behavior is considered to be caused by segregation of volume defects. On the other hand, the property of over-doped specimens dramatically decrease as temperature increases, which is caused by double decreases of flux-pinning limit of a volume defect and segregation effect.
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Submitted 21 December, 2020;
originally announced December 2020.
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Water-Quenched Effects of 5 wt.% (Fe, Ti) particle-doped MgB$_2$ Superconductor and Low Limit of Pinning Effect
Authors:
H. B. Lee,
G. C. Kim,
Hyoungjeen Jeen,
Y. C. Kim
Abstract:
\begin{abstract}
We have studied magnetic properties of water-quenched 5 wt.% (Fe, Ti) particle-doped MgB$_2$ comparing with that of air-cooled one. Generally, grain refinement is achieved by increasing cooling rate, which implies an increase of grainboundaries in the superconductor. Here we show that increased grainboundaries influence what kinds of effects on the field dependence of magnetizat…
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\begin{abstract}
We have studied magnetic properties of water-quenched 5 wt.% (Fe, Ti) particle-doped MgB$_2$ comparing with that of air-cooled one. Generally, grain refinement is achieved by increasing cooling rate, which implies an increase of grainboundaries in the superconductor. Here we show that increased grainboundaries influence what kinds of effects on the field dependence of magnetization and what is the mechanism. As a result, they are served as a pinning center at a high field whereas they are served as a pathway to facilitate the movement of fluxes pinned on volume defects at a low field. As modeling grainboundaries in a superconductor, we explained that they had a flux pinning effect as well as the flux-penetrating promotion effect. As temperature increases, the pinning ability of a grainboundaries decreases, which was caused by increased coherence length. Stacking fault planes and twin boundaries have also been considered by using the model. It explained the reason for that stacking fault planes of MgB$_2$ do not have any pinning effect and the twin boundary of HTSC have the strong pinning or strong flux-penetration effect depending on the direction of the applied field.
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Submitted 30 May, 2020; v1 submitted 13 June, 2019;
originally announced June 2019.
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Upper Critical Field Based on the Width of $Δ$H = $Δ$B region in a Superconductor
Authors:
H. B. Lee,
G. C. Kim,
B. J. Kim,
Y. C. Kim
Abstract:
We studied a method of measuring upper critical field (H$_{c2}$) of a superconductor based on the width of $Δ$H = $Δ$B region, which appears in the superconductor that volume defects are many and dominant. Here we present the basic concept and details of the method. Although H$_{c2}$ of a superconductor is fixed according to kind of the superconductor, it is difficult to measure H$_{c2}$ experimen…
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We studied a method of measuring upper critical field (H$_{c2}$) of a superconductor based on the width of $Δ$H = $Δ$B region, which appears in the superconductor that volume defects are many and dominant. Here we present the basic concept and details of the method. Although H$_{c2}$ of a superconductor is fixed according to kind of the superconductor, it is difficult to measure H$_{c2}$ experimentally, and the results are different depending on the experimental conditions. H$_{c2}$ was calculated from the theory that pinned fluxes at volume defects are picked out and move into an inside of the superconductor when their arrangement is the same as that of H$_{c2}$ state of the superconductor. H$_{c2}$ of MgB$_2$ obtained by the method was 65.4 Tesla at 0 K. The reason that H$_{c2}$ obtained by the method is closer to ultimate H$_{c2}$ is based on that $Δ$F$_{pinning}$/$Δ$F$_{pickout}$ is more than 4 when pinned fluxes at volume defects of 163 nm radius are picked out. The method will help to find the ultimate H$_{c2}$ of volume defect-dominating superconductors.
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Submitted 21 May, 2019;
originally announced May 2019.
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Increases of a Diamagnetic Property by Flux-Pinning in Volume Defect-Dominating Superconductors
Authors:
H. B. Lee,
G. C. Kim,
Y. C. Kim,
R. K. Ko,
D. Y. Jeong
Abstract:
Whereas there are two critical fields that are H$_{c1}$ and H$_{c2}$ in the ideal type II superconductor, there is another critical field H$_{c1}'$ defined as the field showing the maximum diamagnetic property in the real type II superconductor. We would present that H$_{c1}'$ is able to be proved theoretically and experimentally. We have derived an equation based on flux-pinning effect of volume…
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Whereas there are two critical fields that are H$_{c1}$ and H$_{c2}$ in the ideal type II superconductor, there is another critical field H$_{c1}'$ defined as the field showing the maximum diamagnetic property in the real type II superconductor. We would present that H$_{c1}'$ is able to be proved theoretically and experimentally. We have derived an equation based on flux-pinning effect of volume defects. MgB$_2$ bulks which were synthesized by Mg and B are similar to this model. The number of quantum fluxes pinned at a defect of radius r, a pinning penetration depth, magnetic flux penetration method, and a magnetization at H$_{c1}'$ in the static state are suggested through the equation of the model. It was speculated that pinned fluxes at a volume defect in the superconductor have to be pick-out depinned from the defect and move an inside of the superconductor when pick-out forces of pinned fluxes is larger than pinning force of the defect (F$_{pickout}$ $>$ F$_{pinning}$) or when the shortest distance between pinned fluxes at a volume defect is the same as that of H$_{c2}$. In reality, $Δ$G$_{dynamic}$ which is sum of fluxes movement energy and fluxes vibration energy is involved in movement of pinned fluxes. When volume defects are small and many, the number of pinned fluxes at a volume defect calculated by experimental results was closer to that of ideally calculated ones because of a small $Δ$G$_{dynamic}$. However, when volume defects are large and a few, the number of pinned fluxes at a volume defect calculated by experimental results were much fewer than that of ideally calculated ones because of a large $Δ$G$_{dynamic}$.
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Submitted 5 November, 2020; v1 submitted 12 April, 2019;
originally announced April 2019.
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Delta H = Delta B region in volume defect-dominating superconductor
Authors:
H. B. Lee,
G. C. Kim,
H. J. Park,
Y. C. Kim
Abstract:
According to Ginzburg-Landau theory, it has been generally accepted that the diamagnetic property decreases after the lower critical field. However, we found that (Fe, Ti) particle doped MgB2 specimens reveal the Delta H = Delta B section in the magnetization curves, which are not following the theory. We present whether this phenomenon appears to be only confined to (Fe, Ti) particle doped Magnes…
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According to Ginzburg-Landau theory, it has been generally accepted that the diamagnetic property decreases after the lower critical field. However, we found that (Fe, Ti) particle doped MgB2 specimens reveal the Delta H = Delta B section in the magnetization curves, which are not following the theory. We present whether this phenomenon appears to be only confined to (Fe, Ti) particle doped Magnesium diborid superconductor, whether there is a theoretical basis and why it does not appear in other superconductors. We have understood that the cause of the Delta H = Delta B section is the pinning phenomenon of defects in the superconductor and it only occurs in volume defect dominating superconductors. The width of the Delta H = Delta B section along the number of defects and Hc2 was estimated assuming that defects are in the ideal state, and compared with experimental results. We hypothesized that pinned fluxes have to be picked out from the defect and move into an inside of a superconductor regardless free energy depth of the defect if the distance between fluxes pinned at the defect is equal to the one of upper critical field. It is considered that the reason that this phenomenon has not been reported yet is the flux jump of the volume defect dominating superconductor. The section means that the fluxes that have penetrated into a inside of a superconductor in which volume defects exist are preferentially pinned on them over the entire specimen before Ginzburg-Landau behavior. If the size of volume defects is uniform in some extent, the influence of the planar and line defects is small and the flux jump does not occur, we believe that the section must be observed in any superconductor. It is because this is one of the basic natures of pinning phenomenon in the volume defect dominating superconductor.
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Submitted 15 May, 2019; v1 submitted 12 May, 2018;
originally announced May 2018.
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Observation of spin-orbit insulator-like behavior in LaOBiS$_{2-x}$F$_x$ (0.05 $\leq$ $x$ $\leq$ 0.2)
Authors:
G. C. Kim,
M. Cheon,
Y. C. Kim,
R. -K. Ko
Abstract:
We report the effects of electron doping on the crystal structure and electrical resistivity of LaOBiS$_{2-x}$F$_x$ (0.05 $\leq$ $x$ $\leq$ 0.2). The $ab$ plane is found to be relatively insensitive to the amount of F, whereas the $c$ axis shrinks continuously with increasing $x$, suggesting that the doped F atoms substitute selectively into the apical sites in the BiS$_2$ layer. At $x$ = 0.10, as…
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We report the effects of electron doping on the crystal structure and electrical resistivity of LaOBiS$_{2-x}$F$_x$ (0.05 $\leq$ $x$ $\leq$ 0.2). The $ab$ plane is found to be relatively insensitive to the amount of F, whereas the $c$ axis shrinks continuously with increasing $x$, suggesting that the doped F atoms substitute selectively into the apical sites in the BiS$_2$ layer. At $x$ = 0.10, as the temperature is decreased from room temperature, the electrical resistivity is temperature-independent from room temperature to 285 K, increases linearly with decreasing temperature from 285 K to 205 K and then shows obvious insulating behavior below 205 K, which may be due to strong spin-orbit coupling. LaOBiS$_{1.9}$F$_{0.1}$ shows the significantly weak and temperature-independent diamagnetism without any evident anomalies caused by a phase transition.
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Submitted 16 December, 2015;
originally announced December 2015.
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Doping dependence of phase coherence between superconducting Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ grains
Authors:
G. C. Kim,
M. Cheon,
Y. C. Kim
Abstract:
In the present work, we report the new findings on the doping level dependence of the phase coherence between superconducting Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi-2212) grains. The experimental results from the strongly underdoped and overdoped regimes deviated from the expectation based on the doping level dependence of the superfluid density at $T$ = 0 K. These findings appear to be governed by int…
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In the present work, we report the new findings on the doping level dependence of the phase coherence between superconducting Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi-2212) grains. The experimental results from the strongly underdoped and overdoped regimes deviated from the expectation based on the doping level dependence of the superfluid density at $T$ = 0 K. These findings appear to be governed by interplay between competing orders inside the superconducting dome of cuprate superconductors. Two quantum critical points are likely to exist at the underdoped and overdoped regimes beneath the superconducting dome.
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Submitted 16 November, 2014; v1 submitted 26 August, 2014;
originally announced August 2014.
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A ferromagnetic-like phase transition in new oxychalcogenide HgOCuSe
Authors:
G. C. Kim,
M. Cheon,
I. S. Park,
D. Ahmad,
Y. C. Kim
Abstract:
We report the synthesis of a new oxychalcogenide HgOCuSe sample. The resistivity decreases as a function of $T^{1.75}$ with decreasing temperature from room temperature down to around 80 K. There exists a very sharp ferromagnetic-like phase transition at around 60 K under a field of $H$ = 100 Oe. Contrary to the usual ferromagnetic materials, the descending and ascending branches of the magnetic h…
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We report the synthesis of a new oxychalcogenide HgOCuSe sample. The resistivity decreases as a function of $T^{1.75}$ with decreasing temperature from room temperature down to around 80 K. There exists a very sharp ferromagnetic-like phase transition at around 60 K under a field of $H$ = 100 Oe. Contrary to the usual ferromagnetic materials, the descending and ascending branches of the magnetic hysteresis curve, at 30 K, are reversed in the whole irreversible field range and the reverse irreversibility decreases at 5 K.
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Submitted 30 May, 2011;
originally announced May 2011.
