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Van der Waals epitaxy of Weyl-semimetal Td-WTe$_2$
Authors:
Alexandre Llopez,
Frédéric Leroy,
Calvin Tagne-Kaegom,
Boris Croes,
Adrien Michon,
Chiara Mastropasqua,
Mohamed Al Khalfioui,
Stefano Curiotto,
Pierre Müller,
Andrés Saùl,
Bertrand Kierren,
Geoffroy Kremer,
Patrick Le Fèvre,
François Bertran,
Yannick Fagot-Revurat,
Fabien Cheynis
Abstract:
Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we…
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Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we report the growth of Td-WTe$_2$ ultrathin films by MBE on monolayer (ML) graphenereaching a mean flake size of $\cong$110nm, which is, on overage, more than three time larger thanprevious results. WTe$_2$ films thicker than 5nm have been successfully synthesized and exhibit theexpected Td-phase atomic structure. We rationalize epitaxial growth of Td-WTe$_2$ and propose asimple model to estimate the mean flake size as a function of growth parameters that can be appliedto other transition metal dichalcogenides (TMDCs). Based on nucleation theory and Kolmogorov-Johnson-Meh-Avrami (KJMA) equation, our analytical model supports experimental data showinga critical coverage of 0.13ML above which WTe$_2$ nucleation becomes negligible. The quality ofmonolayer WTe$_2$ films is demonstrated from electronic band structure analysis using angle-resolved photoemission spectroscopy (ARPES) in agreement with first-principle calculationsperformed on free-standing WTe$_2$ and previous reports.
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Submitted 15 April, 2024;
originally announced April 2024.
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Following enhanced Sm spin projection in Gd$_x$Sm$_{1-x}$N
Authors:
J. D. Miller,
J. F. McNulty,
B. J. Ruck,
M. Al Khalfioui,
S. Vézian,
M. Suzuki,
H. Osawa,
N. Kawamura,
H. J. Trodahl
Abstract:
The rare-earth nitrides form a series of structurally simple $intrinsic$ ferromagnetic semiconductors, a rare class of both fundamental interest and application potential. Within the series there is a wide range of magnetic properties relating to the spin/orbit contributions to the ferromagnetic ground states. We report an x-ray magnetic circular dichroism investigation of the spin/orbit magnetic…
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The rare-earth nitrides form a series of structurally simple $intrinsic$ ferromagnetic semiconductors, a rare class of both fundamental interest and application potential. Within the series there is a wide range of magnetic properties relating to the spin/orbit contributions to the ferromagnetic ground states. We report an x-ray magnetic circular dichroism investigation of the spin/orbit magnetic dipole alignments of Sm and Gd ions in epitaxial Gd$_x$Sm$_{1-x}$N films. The Sm spin-alignment expectation value $\langle S_{z} \rangle$ is seen to be strengthened by the Gd/Sm exchange interaction, providing guidance concerning the composition for an angular momentum compensation point (where the volume-averaged total angular momentum of a film is zero).
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Submitted 22 August, 2022;
originally announced August 2022.
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AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
Authors:
Stéphane Vézian,
Benjamin Damilano,
Franck Natali,
Mohamed Al Khalfioui,
Jean Massies
Abstract:
An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found that Ga segregates at the surface during the first stages of growth. We showed that the problem related to Ga surface segregation can be simply suppressed by growing a few monolayers of AlN before starting the SmN growth.…
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An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found that Ga segregates at the surface during the first stages of growth. We showed that the problem related to Ga surface segregation can be simply suppressed by growing a few monolayers of AlN before starting the SmN growth. This results in a significant improvement of the crystallinity of SmN thin films assessed by X-ray diffraction.
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Submitted 7 April, 2016;
originally announced April 2016.
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Highly resistive epitaxial Mg-doped GdN thin films
Authors:
C. -M. Lee,
H. Warring,
S. Vézian,
B. Damilano,
S. Granville,
M. Al Khalfioui,
Y. Cordier,
H. J. Trodahl,
B. J. Ruck,
F. Natali
Abstract:
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN fi…
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We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)].
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Submitted 29 October, 2014;
originally announced October 2014.
