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Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers
Authors:
Y. Baron,
J. L. Lábár,
S. Lequien,
B. Pécz,
R. Daubriac,
S. Kerdilés,
P. Acosta ALba,
C. Marcenat,
D. Débarre,
F. Lefloch,
F. Chiodi
Abstract:
We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped supe…
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We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped superconducting Si at large scale. In particular, we highlight the effect of the nanosecond laser annealing energy and the impact of multiple laser anneals. Increasing the energy leads to a linear increase of the layer thickness, and to the increase of the superconducting critical temperature $T_c$ from zero ($<35\, mK$) to $0.5\,K$. This value is comparable to superconducting Si layers realised by Gas Immersion Laser Doping where the dopants are incorporated without introducing the deep defects associated to implantation. Superconductivity only appears when the annealed depth is larger than the initial amorphous layer induced by the boron implantation. The number of subsequent anneals results in a more homogeneous doping with reduced amount of structural defects and increased conductivity. The quantitative analysis of $T_c$ concludes on a superconducting/ non superconducting bilayer, with an extremely low resistance interface. This highlights the possibility to couple efficiently superconducting Si to Si channels.
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Submitted 25 June, 2024;
originally announced June 2024.
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Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation
Authors:
Damiano Ricciarelli,
Jonas Müller,
Guilhem Larrieu,
Ioannis Deretzis,
Gaetano Calogero,
Enrico Martello,
Giuseppe Fisicaro,
Jean-Michel Hartmann,
Sébastien Kerdilès,
Mathieu Opprecht,
Antonio Massimiliano Mio,
Richard Daubriac,
Fuccio Cristiano,
Antonino La Magna
Abstract:
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decade…
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Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decades for their compatibility with silicon devices. Indeed, they enable the manipulation of properties like strain, carrier mobilities and bandgap. In this framework, they can for instance boost the performances of p-type MOSFETs but also enable near infra-red absorption and emission for applications in photo-detection and photonics. Laser melting on such type of layers, however results, up to now, in the development of extended defects and poor control over layer morphology and homogeneity. In our study, we investigate the laser melting of ~700 nm thick relaxed silicon-germanium samples coated with SiO2 nano-arrays, observing the resulting material to maintain an unaltered lattice. We found the geometrical parameters of the silicon oxide having an impact on the thermal budget samples see, influencing melt threshold, melt depth and germanium distribution.
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Submitted 6 May, 2024; v1 submitted 18 March, 2024;
originally announced March 2024.
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Atomistic insights into ultrafast SiGe nanoprocessing
Authors:
Gaetano Calogero,
Domenica Raciti,
Damiano Ricciarelli,
Pablo Acosta-Alba,
Fuccio Cristiano,
Richard Daubriac,
Remi Demoulin,
Ioannis Deretzis,
Giuseppe Fisicaro,
Jean-Michel Hartmann,
Sébastien Kerdilès,
Antonino La Magna
Abstract:
Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework able to simulate atom-by-atom the hi…
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Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework able to simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale super-lattice Kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations, as well as advanced applications to strained, defected, nanostructured and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.
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Submitted 6 September, 2023;
originally announced September 2023.
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Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys
Authors:
Damiano Ricciarelli,
Giovanni Mannino,
Ioannis Deretzis,
Gaetano Calogero,
Giuseppe Fisicaro,
Richard Daubriac,
Remi Demoulin,
Fuccio Cristiano,
Pawel P. Michalowski,
Pablo Acosta-Alba,
Jean-Michel Hartmann,
Sébastien Kerdilès,
Antonino La Magna
Abstract:
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes an…
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Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes and phases are involved. Within this context, reliable simulations of laser melting are required for optimizing the process parameters while reducing the number of experimental tests. This gives rise to a virtual Design of Experiments (DoE). $Si_{1-x}Ge_{x}$ alloys are nowadays used for their compatibility with silicon devices enabling to engineer properties such as strain, carrier mobilities and bandgap. In this work, the laser melting process of relaxed and strained $Si_{1-x}Ge_{x}$ is simulated with a finite element method / phase field approach. Particularly, we calibrated the dielectric functions of the alloy for its crystalline and liquid phase using experimental data. We highlighted the importance of reproducing the exact reflectivity of the interface between air and the material in its different aggregation states, to correctly mimic the process. We indirectly discovered intriguing features on the optical behavior of melt silicon-germanium.
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Submitted 8 September, 2023; v1 submitted 28 March, 2023;
originally announced March 2023.
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Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics
Authors:
Jean-Marie Poumirol,
Clément Majorel,
Nicolas Chery,
Christian Girard,
Peter R. Wiecha,
Nicolas Mallet,
Guilhem Larrieu,
Fuccio Cristiano,
Richard Monflier,
Anne-Sophie Royet,
Pablo Acosta Alba,
Sébastien Kerdiles,
Vincent Paillard,
Caroline Bonafos
Abstract:
We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $μ$m by adjusting the free carrier concentration between 10$^{20}$ and 10$^{21}$ cm$^{-3}$. We show that strong infrared light absorption can be achieved with all-silicon plasmonic metasur…
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We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $μ$m by adjusting the free carrier concentration between 10$^{20}$ and 10$^{21}$ cm$^{-3}$. We show that strong infrared light absorption can be achieved with all-silicon plasmonic metasurfaces employing nano-structures with dimensions as low as 100\,nm in diameter and 23 nm in height. Our numerical simulations show an excellent agreement with the experimental data and provide physical insights on the impact of the nanostructure shape as well as of near-field effects on the optical properties of the metasurface. Our results open highly promising perspectives for integrated all-silicon-based plasmonic devices for instance for chemical or biological sensing or for thermal imaging.
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Submitted 9 March, 2021; v1 submitted 16 November, 2020;
originally announced November 2020.
