Showing 1–1 of 1 results for author: Kennedy, V J

Quantitative study of molecular N_2 trapped in disordered GaN:O films

Authors: B. J. Ruck, A. Koo, U. D. Lanke, F. Budde, S. Granville, H. J. Trodahl, A. Bittar, J. B. Metson, V. J. Kennedy, A. Markwitz

Abstract: The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a clo… ▽ More The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a close correlation between the N_2 fraction, the level of oxygen impurities, and the absence of short-range order in the GaN:O matrix. △ Less

Submitted 9 August, 2004; originally announced August 2004.

Comments: 5 pages, 3 figures