Showing 1–22 of 22 results for author: Kennedy, J

Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C

Authors: Yunfei He, David C. Moore, Yubo Wang, Spencer Ware, Sizhe Ma, Dhiren K. Pradhan, Zekun Hu, Xingyu Du, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and… ▽ More Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and robust ferroelectric switching up to 1000°C. The coercive field decreases linearly from -6.4/+11.9 MV cm-1 at room temperature to -3.1/+7.8 MV cm-1 at 800°C, further reducing to -2.5 MV cm-1 at 1000°C. At 600°C, the devices achieve remarkable reliability with ~2000 endurance cycles and over at least 100 hours of retention with negligible polarization loss. At 800°C, the devices retain data for at least 10,000 seconds and exceed 400 write cycles. Our results further highlight the potential for ferroelectric AlScN thin-films particularly when paired with SiC semiconductor substrates for high-temperature non-volatile memory. △ Less

Submitted 19 March, 2025; v1 submitted 25 November, 2024; originally announced November 2024.

Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation

Authors: Martin Markwitz, Peter P. Murmu, Takao Mori, John V. Kennedy, Ben J. Ruck

Abstract: Copper(I) iodide, CuI, is the leading $p$-type non-toxic and earth-abundant semiconducting material for transparent electronics and thermoelectric generators. Defects play a crucial role in determining the carrier concentration, scattering process, and therefore thermoelectric performance of a material. A result of defect engineering, the power factor of thin film CuI was increased from… ▽ More Copper(I) iodide, CuI, is the leading $p$-type non-toxic and earth-abundant semiconducting material for transparent electronics and thermoelectric generators. Defects play a crucial role in determining the carrier concentration, scattering process, and therefore thermoelectric performance of a material. A result of defect engineering, the power factor of thin film CuI was increased from $332\pm32$ μWm$^{-1}$K$^{-2}$ to $578\pm58$ μWm$^{-1}$K$^{-2}$ after implantation with noble gas ions (Ne, Ar, Xe). The increased power factor is due to a decoupling of the Seebeck coefficient and electrical conductivity identified through a changing scattering mechanism. Ion implantation causes the abundant production of Frenkel pairs, which were found to suppress compensating donors in CuI, and which scenario was also supported by density functional theory calculations. The compensating donor suppression led to a significantly improved Hall carrier concentration, increasing from $6.5\times10^{19}\pm0.1\times10^{19}$ cm$^{-3}$ to $11.5\times10^{19}\pm0.4\times10^{19}$ cm$^{-3}$. This work provides an important step forward in the development of CuI as a transparent conducting material for electronics and thermoelectric generators by introducing beneficial point defects with ion implantation. △ Less

Submitted 1 November, 2024; originally announced November 2024.

Comments: 7 pages, 4 figures, 57 references. The following article has been accepted by Applied Physics Letters. After it is published, it will be found at https://doi.org/10.1063/5.0233754

Real-time observation of frustrated ultrafast recovery from ionisation in nanostructured SiO2 using laser driven accelerators

Authors: J. P. Kennedy, M. Coughlan, C. R. J. Fitzpatrick, H. M. Huddleston, J. Smyth, N. Breslin, H. Donnelly, C. Arthur, B. Villagomez, O. N. Rosmej, F. Currell, L. Stella, D. Riley, M. Zepf, M. Yeung, C. L. S. Lewis, B. Dromey

Abstract: Ionising radiation interactions in matter can trigger a cascade of processes that underpin long-lived damage in the medium. To date, however, a lack of suitable methodologies has precluded our ability to understand the role that material nanostructure plays in this cascade. Here, we use transient photoabsorption to track the lifetime of free electrons (t_c) in bulk and nanostructured SiO2 (aerogel… ▽ More Ionising radiation interactions in matter can trigger a cascade of processes that underpin long-lived damage in the medium. To date, however, a lack of suitable methodologies has precluded our ability to understand the role that material nanostructure plays in this cascade. Here, we use transient photoabsorption to track the lifetime of free electrons (t_c) in bulk and nanostructured SiO2 (aerogel) irradiated by picosecond-scale (10^-12 s) bursts of X-rays and protons from a laser-driven accelerator. Optical streaking reveals a sharp increase in t_c from < 1 ps to > 50 ps over a narrow average density (p_av) range spanning the expected phonon-fracton crossover in aerogels. Numerical modelling suggests that this discontinuity can be understood by a quenching of rapid, phonon-assisted recovery in irradiated nanostructured SiO_2. This is shown to lead to an extended period of enhanced energy density in the excited electron population. Overall, these results open a direct route to tracking how low-level processes in complex systems can underpin macroscopically observed phenomena and, importantly, the conditions that permit them to emerge. △ Less

Submitted 13 September, 2024; originally announced September 2024.

Materials for High Temperature Digital Electronics

Authors: Dhiren K. Pradhan, David C. Moore, A. Matt Francis, Jacob Kupernik, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 C. The emergent technological frontiers of sp… ▽ More Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 C. The emergent technological frontiers of space exploration, geothermal energy harvesting, nuclear energy, unmanned avionic systems, and autonomous driving will rely on control systems, sensors, and communication devices which operate at temperatures as high as 500 C and beyond. At these extreme temperatures, active (heat exchanger, phase change cooling) or passive (fins and thermal interface materials) cooling strategies add significant mass and complication which is often infeasible. Thus, new material solutions beyond conventional silicon CMOS devices are necessary for high temperature, resilient electronic systems. Accomplishing this will require a united effort to explore development, integration, and ultimately manufacturing of non-silicon-based logic and memory technologies, non-traditional metals for interconnects, and ceramic packaging technology. △ Less

Submitted 21 August, 2024; v1 submitted 4 April, 2024; originally announced April 2024.

Comments: 6 Figures

Accurate Crystal Structure Prediction of New 2D Hybrid Organic Inorganic Perovskites

Authors: Nima Karimitari, William J. Baldwin, Evan W. Muller, Zachary J. L. Bare, W. Joshua Kennedy, Gábor Csányi, Christopher Sutton

Abstract: Low dimensional hybrid organic-inorganic perovskites (HOIPs) represent a promising class of electronically active materials for both light absorption and emission. The design space of HOIPs is extremely large, since a diverse space of organic cations can be combined with different inorganic frameworks. This immense design space allows for tunable electronic and mechanical properties, but also nece… ▽ More Low dimensional hybrid organic-inorganic perovskites (HOIPs) represent a promising class of electronically active materials for both light absorption and emission. The design space of HOIPs is extremely large, since a diverse space of organic cations can be combined with different inorganic frameworks. This immense design space allows for tunable electronic and mechanical properties, but also necessitates the development of new tools for in silico high throughput analysis of candidate structures. In this work, we present an accurate, efficient, transferable and widely applicable machine learning interatomic potential (MLIP) for predicting the structure of new 2D HOIPs. Using the MACE architecture, an MLIP is trained on 86 diverse experimentally reported HOIP structures. The model is tested on 73 unseen perovskite compositions, and achieves chemical accuracy with respect to the reference electronic structure method. Our model is then combined with a simple random structure search algorithm to predict the structure of hypothetical HOIPs given only the proposed composition. Success is demonstrated by correctly and reliably recovering the crystal structure of a set of experimentally known 2D perovskites. Such a random structure search is impossible with ab initio methods due to the associated computational cost, but is relatively inexpensive with the MACE potential. Finally, the procedure is used to predict the structure formed by a new organic cation with no previously known corresponding perovskite. Laboratory synthesis of the new hybrid perovskite confirms the accuracy of our prediction. This capability, applied at scale, enables efficient screening of thousands of combinations of organic cations and inorganic layers. △ Less

Submitted 11 March, 2024; originally announced March 2024.

Comments: 14 pages and 9 figures in the main text. Supplementary included in pdf

Hamiltonian engineering of spin-orbit coupled fermions in a Wannier-Stark optical lattice clock

Authors: Alexander Aeppli, Anjun Chu, Tobias Bothwell, Colin J. Kennedy, Dhruv Kedar, Peiru He, Ana Maria Rey, Jun Ye

Abstract: Engineering a Hamiltonian system with tunable interactions provides opportunities to optimize performance for quantum sensing and explore emerging phenomena of many-body systems. An optical lattice clock based on partially delocalized Wannier-Stark states in a gravity-tilted shallow lattice supports superior quantum coherence and adjustable interactions via spin-orbit coupling, thus presenting a p… ▽ More Engineering a Hamiltonian system with tunable interactions provides opportunities to optimize performance for quantum sensing and explore emerging phenomena of many-body systems. An optical lattice clock based on partially delocalized Wannier-Stark states in a gravity-tilted shallow lattice supports superior quantum coherence and adjustable interactions via spin-orbit coupling, thus presenting a powerful spin model realization. The relative strength of the on-site and off-site interactions can be tuned to achieve a zero density shift at a `magic' lattice depth. This mechanism, together with a large number of atoms, enables the demonstration of the most stable atomic clock while minimizing a key systematic uncertainty related to atomic density. Interactions can also be maximized by driving off-site Wannier-Stark transitions, realizing a ferromagnetic to paramagnetic dynamical phase transition. △ Less

Submitted 15 January, 2022; originally announced January 2022.

Scalable synthesis of 2D van der Waals superlattices

Authors: Michael J. Motala, Xiang Zhang, Pawan Kumar, Eliezer F. Oliveira, Anna Benton, Paige Miesle, Rahul Rao, Peter R. Stevenson, David Moore, Adam Alfieri, Jason Lynch, Guanhui Gao, Sijie Ma, Hanyu Zhu, Zhe Wang, Ivan Petrov, Eric A. Stach, W. Joshua Kennedy, Shiva Vengala, James M. Tour, Douglas S. Galvao, Deep Jariwala, Christopher Muratore, Michael Snure, Pulickel M. Ajayan , et al. (1 additional authors not shown)

Abstract: Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with mate… ▽ More Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with materials processing have limited material quality and impeded scalability. We demonstrate a method to convert sub-nanometer metal films deposited on silicon and sapphire into TMDC heterostructures through vapor-phase processing. The resulting heterostructures and superlattices exhibit novel properties compared with stand-alone TMDCs, including reduced bandgap, enhanced light-matter coupling, and improved catalytic performance. This robust and scalable synthetic method provides new opportunities to generate a wide range of artificially stacked 2D superlattices with controlled morphology and composition. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Preparation of the spin-Mott state: a spinful Mott insulator of repulsively bound pairs

Authors: Julius de Hond, Jinggang Xiang, Woo Chang Chung, Enid Cruz-Colón, Wenlan Chen, William Cody Burton, Colin J. Kennedy, Wolfgang Ketterle

Abstract: We observe and study a special ground state of bosons with two spin states in an optical lattice: the spin-Mott insulator, a state that consists of repulsively bound pairs which is insulating for both spin and charge transport. Because of the pairing gap created by the interaction anisotropy, it can be prepared with low entropy and can serve as a starting point for adiabatic state preparation. We… ▽ More We observe and study a special ground state of bosons with two spin states in an optical lattice: the spin-Mott insulator, a state that consists of repulsively bound pairs which is insulating for both spin and charge transport. Because of the pairing gap created by the interaction anisotropy, it can be prepared with low entropy and can serve as a starting point for adiabatic state preparation. We find that the stability of the spin-Mott state depends on the pairing energy, and observe two qualitatively different decay regimes, one of which exhibits protection by the gap. △ Less

Submitted 5 October, 2021; v1 submitted 1 October, 2021; originally announced October 2021.

Non-equilibrium Strain Relaxation Noise in the Relaxor Ferroelectric (PbMg1/3Nb2/3O3)100-x( PbTiO3)x

Authors: Xinyang Zhang, Thomas J. Kennedy, Eugene V. Colla, M. B. Weissman, D. D. Viehland

Abstract: Large low-frequency noise is found in some perovskite relaxor ferreoelectrics when they are polarized, regardless of whether the polarization is accompanied by an applied electric field. The noise appears both in the ferroelectric and relaxor states, including in the nominally ergodic paraelectric state at temperatures above the susceptibility peak. Since it is present whenever the samples are mic… ▽ More Large low-frequency noise is found in some perovskite relaxor ferreoelectrics when they are polarized, regardless of whether the polarization is accompanied by an applied electric field. The noise appears both in the ferroelectric and relaxor states, including in the nominally ergodic paraelectric state at temperatures above the susceptibility peak. Since it is present whenever the samples are microphonic due to piezoelectricity but not evident when they are not microphonic, it appears to be a response to mechanical strain changes. Dependence of the noise on sample thermal history indicates that non-equilibrium strain relaxation is the source, even in the temperature range for which the sample is nominally ergodic. Non-equilibrium noise in the absence of net piezoelectricity is found at somewhat higher frequencies. △ Less

Submitted 2 December, 2018; v1 submitted 16 July, 2018; originally announced July 2018.

Comments: J. Appl. Phys., in press. Substantially revised thanks to extremely useful referee comments

Journal ref: Journal of Applied Physics 124, 234102 (2018)

Coherence Times of Bose-Einstein Condensates beyond the Shot-Noise Limit via Superfluid Shielding

Authors: William Cody Burton, Colin J. Kennedy, Woo Chang Chung, Samarth Vadia, Wenlan Chen, Wolfgang Ketterle

Abstract: We demonstrate a new way to extend the coherence time of separated Bose-Einstein condensates that involves immersion into a superfluid bath. When both the system and the bath have similar scattering lengths, immersion in a superfluid bath cancels out inhomogeneous potentials either imposed by external fields or inherent in density fluctuations due to atomic shot noise. This effect, which we call s… ▽ More We demonstrate a new way to extend the coherence time of separated Bose-Einstein condensates that involves immersion into a superfluid bath. When both the system and the bath have similar scattering lengths, immersion in a superfluid bath cancels out inhomogeneous potentials either imposed by external fields or inherent in density fluctuations due to atomic shot noise. This effect, which we call superfluid shielding, allows for coherence lifetimes beyond the projection noise limit. We probe the coherence between separated condensates in different sites of an optical lattice by monitoring the contrast and decay of Bloch oscillations. Our technique demonstrates a new way that interactions can improve the performance of quantum devices. △ Less

Submitted 30 November, 2016; v1 submitted 26 October, 2016; originally announced October 2016.

Comments: 4 pages, 4 figures plus 2 page supplement

Journal ref: Phys. Rev. Lett. 117, 275301 (2016)

Observation of Bose-Einstein Condensation in a Strong Synthetic Magnetic Field

Authors: Colin J. Kennedy, William Cody Burton, Woo Chang Chung, Wolfgang Ketterle

Abstract: Extensions of Berry's phase and the quantum Hall effect have led to the discovery of new states of matter with topological properties. Traditionally, this has been achieved using gauge fields created by magnetic fields or spin orbit interactions which couple only to charged particles. For neutral ultracold atoms, synthetic magnetic fields have been created which are strong enough to realize the Ha… ▽ More Extensions of Berry's phase and the quantum Hall effect have led to the discovery of new states of matter with topological properties. Traditionally, this has been achieved using gauge fields created by magnetic fields or spin orbit interactions which couple only to charged particles. For neutral ultracold atoms, synthetic magnetic fields have been created which are strong enough to realize the Harper-Hofstadter model. Despite many proposals and major experimental efforts, so far it has not been possible to prepare the ground state of this system. Here we report the observation of Bose-Einstein condensation for the Harper-Hofstadter Hamiltonian with one-half flux quantum per lattice unit cell. The diffraction pattern of the superfluid state directly shows the momentum distribution on the wavefuction, which is gauge-dependent. It reveals both the reduced symmetry of the vector potential and the twofold degeneracy of the ground state. We explore an adiabatic many-body state preparation protocol via the Mott insulating phase and observe the superfluid ground state in a three-dimensional lattice with strong interactions. △ Less

Submitted 27 March, 2015; originally announced March 2015.

Comments: 6 pages, 5 figures. Supplement: 6 pages, 4 figures

Weyl points in three-dimensional optical lattices: synthetic magnetic monopoles in momentum space

Authors: Tena Dubček, Colin J. Kennedy, Ling Lu, Wolfgang Ketterle, Marin Soljačić, Hrvoje Buljan

Abstract: We show that Hamiltonians with Weyl points can be realized for ultracold atoms using laser-assisted tunneling in three-dimensional optical lattices. Weyl points are synthetic magnetic monopoles that exhibit a robust, three-dimensional linear dispersion. They are associated with many interesting topological states of matter, such as Weyl semimetals and chiral Weyl fermions. However, Weyl points hav… ▽ More We show that Hamiltonians with Weyl points can be realized for ultracold atoms using laser-assisted tunneling in three-dimensional optical lattices. Weyl points are synthetic magnetic monopoles that exhibit a robust, three-dimensional linear dispersion. They are associated with many interesting topological states of matter, such as Weyl semimetals and chiral Weyl fermions. However, Weyl points have yet to be experimentally observed in any system. We show that this elusive goal is well-within experimental reach with an extension of the techniques recently used to obtain the Harper Hamiltonian. △ Less

Submitted 24 December, 2014; originally announced December 2014.

Comments: are welcome

Journal ref: Phys. Rev. Lett. 114, 225301 (2015)

Ground state of (Pb0.94Sr0.06)(Zr0.530Ti0.470)O3 in the morphotropic phase boundary region: Evidence for a monoclinic Cc space group

Authors: Ravindra Singh Solanki, Akhilesh Kumar Singh, S. K. Mishra, Shane J. Kennedy, Takashi Suzuki, Yoshihiro Kuroiwa, Chikako Moriyoshi, Dhananjai Pandey

Abstract: The antiferrodistortive (AFD) phase transition for a pseudotetragonal composition of Pb(Zr0.530Ti0.470)O3 (PZT) doped with 6% Sr has been investigated using sound velocity (4 to 320K), high resolution synchrotron X-ray powder diffraction (100 to 800K) and high resolution as well as high flux neutron powder diffraction measurements (4K) to settle the existing controversies about the true ground sta… ▽ More The antiferrodistortive (AFD) phase transition for a pseudotetragonal composition of Pb(Zr0.530Ti0.470)O3 (PZT) doped with 6% Sr has been investigated using sound velocity (4 to 320K), high resolution synchrotron X-ray powder diffraction (100 to 800K) and high resolution as well as high flux neutron powder diffraction measurements (4K) to settle the existing controversies about the true ground state of PZT in the morphotropic phase boundary (MPB) region. The multiplet character of the neutron diffraction profiles of (3/2 1/2 1/2)pc (pseudocubic or pc indices) and (3/2 3/2 1/2)pc superlattice peaks, appearing below the AFD transition temperature, rules out the rhombohedral R3c space group. The true ground state is confirmed to be monoclinic in the Cc space group in agreement with the predictions of the first principles calculations and earlier findings for pure PZT in the MPB region. 6% Sr2+ substitution and the use of high wavelength (λ=2.44Å) neutrons have played key role in settling the existing controversies about the true ground state of PZT in the MPB region. △ Less

Submitted 21 March, 2014; originally announced March 2014.

Comments: This paper was published in Phys. Rev. B on 24 October 2011

Journal ref: Physical Review B 84, 144116 (2011)

Large low-temperature magnetoresistance in SrFe2As2 single crystals

Authors: S. V. Chong, G. V. M. Williams, J. Kennedy, F. Fang, J. L. Tallon, K. Kadowaki

Abstract: We present the first report on a large low-temperature magnetoresistance (MR) of more than 1600% in a SrFe2As2 single crystal and 1300% in a low-energy Ca ion-implanted SrFe2As2 single crystal that occurs before the emergence of crystallographic strain-induced bulk superconductivity arising from a sample aging effect. In accordance to band structure calculations from literature, which consitently… ▽ More We present the first report on a large low-temperature magnetoresistance (MR) of more than 1600% in a SrFe2As2 single crystal and 1300% in a low-energy Ca ion-implanted SrFe2As2 single crystal that occurs before the emergence of crystallographic strain-induced bulk superconductivity arising from a sample aging effect. In accordance to band structure calculations from literature, which consitently show more than 2 bands are involved in the transport, we have modeled this large MR at high fields using a 3-carrier scenario rather than solely on quantum linear MR model generally used to explain the MR in iron-pnictides. At and below 20 K the large MR may be due to 3-carrier transport in an inhomogeneous state where there are superconducting and metallic regions. △ Less

Submitted 22 October, 2013; originally announced October 2013.

Comments: 6 pages, 4 figures

Journal ref: EPL 104 (2013) 17002

Spin-orbit coupling and spin Hall effect for neutral atoms without spin-flips

Authors: Colin J. Kennedy, Georgios A. Siviloglou, Hirokazu Miyake, William Cody Burton, Wolfgang Ketterle

Abstract: We propose a scheme which realizes spin-orbit coupling and the spin Hall effect for neutral atoms in optical lattices without relying on near resonant laser light to couple different spin states. The spin-orbit coupling is created by modifying the motion of atoms in a spin-dependent way by laser recoil. The spin selectivity is provided by Zeeman shifts created with a magnetic field gradient. Alter… ▽ More We propose a scheme which realizes spin-orbit coupling and the spin Hall effect for neutral atoms in optical lattices without relying on near resonant laser light to couple different spin states. The spin-orbit coupling is created by modifying the motion of atoms in a spin-dependent way by laser recoil. The spin selectivity is provided by Zeeman shifts created with a magnetic field gradient. Alternatively, a quantum spin Hamiltonian can be created by all-optical means using a period- tripling, spin-dependent superlattice. △ Less

Submitted 28 August, 2013; originally announced August 2013.

Comments: 5 pages, 2 figures

Journal ref: Phys. Rev. Lett. 111, 225301 (2013)

Realizing the Harper Hamiltonian with Laser-Assisted Tunneling in Optical Lattices

Authors: Hirokazu Miyake, Georgios A. Siviloglou, Colin J. Kennedy, William Cody Burton, Wolfgang Ketterle

Abstract: We experimentally implement the Harper Hamiltonian for neutral particles in optical lattices using laser-assisted tunneling and a potential energy gradient provided by gravity or magnetic field gradients. This Hamiltonian describes the motion of charged particles in strong magnetic fields. Laser-assisted tunneling processes are characterized by studying the expansion of the atoms in the lattice. T… ▽ More We experimentally implement the Harper Hamiltonian for neutral particles in optical lattices using laser-assisted tunneling and a potential energy gradient provided by gravity or magnetic field gradients. This Hamiltonian describes the motion of charged particles in strong magnetic fields. Laser-assisted tunneling processes are characterized by studying the expansion of the atoms in the lattice. The band structure of this Hamiltonian should display Hofstadter's butterfly. For fermions, this scheme should realize the quantum Hall effect and chiral edge states. △ Less

Submitted 12 August, 2013; v1 submitted 6 August, 2013; originally announced August 2013.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Lett. 111, 185302 (2013)

Room Temperature Operation of a Radiofrequency Diamond Magnetometer near the Shot Noise Limit

Authors: Chang S. Shin, Claudia E. Avalos, Mark C. Butler, David R. Trease, Scott J. Seltzer, J. Peter Mustonen, Daniel J. Kennedy, Victor M. Acosta, Dmitry Budker, Alexander Pines, Vikram S. Bajaj

Abstract: We operate a nitrogen vacancy (NV-) diamond magnetometer at ambient temperatures and study the dependence of its bandwidth on experimental parameters including optical and microwave excitation powers. We introduce an analytical theory that yields an explicit formula for the response of an ensemble of NV- spins to an oscillating magnetic field, such as in NMR applications. We measure a detection ba… ▽ More We operate a nitrogen vacancy (NV-) diamond magnetometer at ambient temperatures and study the dependence of its bandwidth on experimental parameters including optical and microwave excitation powers. We introduce an analytical theory that yields an explicit formula for the response of an ensemble of NV- spins to an oscillating magnetic field, such as in NMR applications. We measure a detection bandwidth of 1.6 MHz and a sensitivity of 4.6 nT/Hz^(1/2), unprecedented in a detector with this active volume and close to the photon shot noise limit of our experiment. △ Less

Submitted 15 January, 2012; originally announced January 2012.

Comments: 4 pages; 4 figures; supporting information

Spin-gap opening accompanied by a strong magnetoelastic response in the S=1 magnetic dimer system Ba3BiRu2O9

Authors: Wojciech Miiller, Maxim Avdeev, Qingdi Zhou, Andrew J. Studer, Brendan J. Kennedy, Gordon J. Kearley, Chris D. Ling

Abstract: Neutron diffraction, magnetization, resistivity, and heat capacity measurements on the 6H-perovskite Ba3BiRu2O9 reveal simultaneous magnetic and structural dimerization driven by strong magnetoelastic coupling. An isostructural but strongly displacive first-order transition on cooling through T*=176 K is associated with a change in the nature of direct Ru-Ru bonds within Ru2O9 face-sharing octahed… ▽ More Neutron diffraction, magnetization, resistivity, and heat capacity measurements on the 6H-perovskite Ba3BiRu2O9 reveal simultaneous magnetic and structural dimerization driven by strong magnetoelastic coupling. An isostructural but strongly displacive first-order transition on cooling through T*=176 K is associated with a change in the nature of direct Ru-Ru bonds within Ru2O9 face-sharing octahedra. Above T*, Ba3BiRu2O9 is an S=1 magnetic dimer system with intradimer exchange interactions J0/kB=320 K and interdimer exchange interactions J'/kB=-160 K. Below T*, a spin-gapped state emerges with Δ\approx220 K. Ab initio calculations confirm antiferromagnetic exchange within dimers, but the transition is not accompanied by long range-magnetic order. △ Less

Submitted 2 December, 2011; originally announced December 2011.

Comments: 5 pages, 5 figures, accepted by Physical Review B

Synthesis and structure of Na+ intercalated WO3(4,4'-bipyridyl)0.5

Authors: Islah Udin, Matthew R. Fox, Helene Martin, Graeme J. Gainsford, John Kennedy, Andreas Markwitz, Shane G. Telfer, Geoffrey B. Jameson, Jeffery L. Tallon

Abstract: We have prepared single crystals of WO3(4,4'-bipyridyl)0.5 and doped these by Na-ion implantation. The structure of the resultant NaxWO3(4,4'-bipyridyl)0.5 was determined by single-crystal x-ray diffraction to comprise atomic layers of corner-shared WO5N octahedra linked by the 4,4'-bypyridine via the apical nitrogen. In the observed space group of Pbca, the fully ordered bipyridyl molecules def… ▽ More We have prepared single crystals of WO3(4,4'-bipyridyl)0.5 and doped these by Na-ion implantation. The structure of the resultant NaxWO3(4,4'-bipyridyl)0.5 was determined by single-crystal x-ray diffraction to comprise atomic layers of corner-shared WO5N octahedra linked by the 4,4'-bypyridine via the apical nitrogen. In the observed space group of Pbca, the fully ordered bipyridyl molecules define cage-shaped structures, not the channels erroneously reported previously for the Cmca polymorph. The Na ions are disordered bimodally about the cage centre, displaced in the c-direction so as to lie closer to the apical oxygens. △ Less

Submitted 27 September, 2009; originally announced September 2009.

Comments: 3 pages, 2 figures

Electroabsorption spectroscopy of single walled nanotubes

Authors: J. W. Kennedy, Z. V. Vardeny, S. Collins, R. H. Baughman, H. Zhao, S. Mazumdar

Abstract: We have measured the electric field modulated absorption of a sample of single-walled nanotubes (SWNT) suspended in a solid polyvinyl alcohol matrix. The electroabsorption (EA) spectrum roughly follows the first derivative of the absorption with respect to photon energy, scales quadratically with the electric field strength, and shows a pronounced anisotropy of light polarization with respect to… ▽ More We have measured the electric field modulated absorption of a sample of single-walled nanotubes (SWNT) suspended in a solid polyvinyl alcohol matrix. The electroabsorption (EA) spectrum roughly follows the first derivative of the absorption with respect to photon energy, scales quadratically with the electric field strength, and shows a pronounced anisotropy of light polarization with respect to the applied electric field direction. These findings indicate a quadratic Stark effect caused by a change in the polarizability of the excited states, which is common to quasi-one dimensional (1D) excitons in organic semiconductors. The EA spectrum is well described by calculations involving electron-electron interaction in the model Hamiltonian of both zigzag and chiral nanotubes. We have calculated the EA spectra for both zigzag and chiral nanotubes within a model Hamiltonian that includes electron-electron interactions. The calculations reproduce the observed quadratic Stark shift of the lowest optical exciton, as well as the more complicated behavior of the EA spectrum in the energy region that corresponds to the next higher exciton. Our findings show that the low-lying absorption bands in semiconducting SWNT are excitonic in origin, in agreement with transient optical measurements that identify the primary photoexcitations in SWNT as quasi-1D excitons with a substantial binding energy. △ Less

Submitted 3 May, 2005; originally announced May 2005.

Comments: 16 pages, 6 figures, PDF format

Quantitative study of molecular N_2 trapped in disordered GaN:O films

Authors: B. J. Ruck, A. Koo, U. D. Lanke, F. Budde, S. Granville, H. J. Trodahl, A. Bittar, J. B. Metson, V. J. Kennedy, A. Markwitz

Abstract: The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a clo… ▽ More The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a close correlation between the N_2 fraction, the level of oxygen impurities, and the absence of short-range order in the GaN:O matrix. △ Less

Submitted 9 August, 2004; originally announced August 2004.

Comments: 5 pages, 3 figures

First order transition from correlated electron semiconductor to ferromagnetic metal in single crystalline FeSi1-xGex

Authors: S. Yeo, S. Nakatsuji, A. D. Bianchi, P. Schlottmann, Z. Fisk, L. Balicas, P. A. Stampe, R. J. Kennedy

Abstract: The phase diagram of FeSi1-xGex, obtained from magnetic, thermal and transport measurements on single crystals, shows a first-order transition from a correlated electron semiconductor to a ferromagnetic metal at a critical concentration, x ~ 0.25. The gap of the insulating phase strongly decreases with x. The specific heat coefficient appears to track the density of states of a Kondo insulator.… ▽ More The phase diagram of FeSi1-xGex, obtained from magnetic, thermal and transport measurements on single crystals, shows a first-order transition from a correlated electron semiconductor to a ferromagnetic metal at a critical concentration, x ~ 0.25. The gap of the insulating phase strongly decreases with x. The specific heat coefficient appears to track the density of states of a Kondo insulator. The phase diagram is consistent with a correlation induced insulator-metal transition in conjunction with disorder on the Si/Ge ligand site. △ Less

Submitted 24 February, 2003; originally announced February 2003.