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An 11-qubit atom processor in silicon
Authors:
Hermann Edlbauer,
Junliang Wang,
A. M. Saffat-Ee Huq,
Ian Thorvaldson,
Michael T. Jones,
Saiful Haque Misha,
William J. Pappas,
Christian M. Moehle,
Yu-Ling Hsueh,
Henric Bornemann,
Samuel K. Gorman,
Yousun Chung,
Joris G. Keizer,
Ludwik Kranz,
Michelle Y. Simmons
Abstract:
Phosphorus atoms in silicon are an outstanding platform for quantum computing as their nuclear spins exhibit coherence time over seconds. By placing multiple phosphorus atoms within a radius of a few nanometers, they couple via the hyperfine interaction to a single, shared electron. Such a nuclear spin register enables multi-qubit control above the fault-tolerant threshold and the execution of sma…
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Phosphorus atoms in silicon are an outstanding platform for quantum computing as their nuclear spins exhibit coherence time over seconds. By placing multiple phosphorus atoms within a radius of a few nanometers, they couple via the hyperfine interaction to a single, shared electron. Such a nuclear spin register enables multi-qubit control above the fault-tolerant threshold and the execution of small-scale quantum algorithms. To achieve quantum error correction, fast and efficient interconnects have to be implemented between spin registers while maintaining high fidelity across all qubit metrics. Here, we demonstrate such integration with a fully controlled 11-qubit atom processor composed of two multi-nuclear spin registers which are linked via electron exchange interaction. Through the development of scalable calibration and control protocols, we achieve coherent coupling between nuclear spins using a combination of single- and multi-qubit gates with all fidelities ranging from 99.5% to 99.99%. We verify the efficient all-to-all connectivity by preparing both local and non-local Bell states with a record state fidelity beyond 99% and extend entanglement through the generation of Greenberger-Horne-Zeilinger (GHZ) states over all data qubits. By establishing high-fidelity operation across interconnected nuclear-spin registers, we realise a key milestone towards fault-tolerant quantum computation with atom processors.
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Submitted 4 June, 2025;
originally announced June 2025.
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Noise Correlations in a 1D Silicon Spin Qubit Array
Authors:
M. B. Donnelly,
J. Rowlands,
L. Kranz,
Y. L. Hsueh,
Y. Chung,
A. V. Timofeev,
H. Geng,
P. Singh-Gregory,
S. K. Gorman,
J. G. Keizer,
R. Rahman,
M. Y. Simmons
Abstract:
Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise in multi-qubit architectures of superconducting qubits arising from the impact of cosmic radiation and high-energy particles giving rise to quasiparticle poiso…
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Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise in multi-qubit architectures of superconducting qubits arising from the impact of cosmic radiation and high-energy particles giving rise to quasiparticle poisoning within the substrate has led to intense investigations of mitigation strategies to address this. In contrast correlated noise in semiconductor spin qubits as a function of distance has not been reported to date. Here we report the magnitude, frequency and spatial dependence of noise correlations between four silicon quantum dot pairs as a function of inter-dot distance at frequencies from 0.3mHz to 1mHz. We find the magnitude of charge noise correlations, quantified by the magnitude square coherence $C_{xy}$, are significantly suppressed from $>0.5$ to $<0.1$ as the inter-dot distance increases from 75nm to 300nm. Using an analytical model we confirm that, in contrast to superconducting qubits, the dominant source of correlated noise arises from low frequency charge noise from the presence of two level fluctuators (TLFs) at the native silicon-silicon dioxide surface. Knowing this, we conclude with an important and timely discussion of charge noise mitigation strategies.
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Submitted 6 May, 2024;
originally announced May 2024.
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Grover's algorithm in a four-qubit silicon processor above the fault-tolerant threshold
Authors:
Ian Thorvaldson,
Dean Poulos,
Christian M. Moehle,
Saiful H. Misha,
Hermann Edlbauer,
Jonathan Reiner,
Helen Geng,
Benoit Voisin,
Michael T. Jones,
Matthew B. Donnelly,
Luis F. Pena,
Charles D. Hill,
Casey R. Myers,
Joris G. Keizer,
Yousun Chung,
Samuel K. Gorman,
Ludwik Kranz,
Michelle Y. Simmons
Abstract:
Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit gates above the fault-tolerant threshold and entanglement of up to three qubits. However, maintaining high fidelity operations while executing multi-qubit algorithms has remained elusive, only being achieved for two spi…
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Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit gates above the fault-tolerant threshold and entanglement of up to three qubits. However, maintaining high fidelity operations while executing multi-qubit algorithms has remained elusive, only being achieved for two spin qubits to date due to the small qubit size, which makes it difficult to control qubits without creating crosstalk errors. Here, we use a four-qubit silicon processor with every operation above the fault tolerant limit and demonstrate Grover's algorithm with a ~95% probability of finding the marked state, one of the most successful implementations to date. Our four-qubit processor is made of three phosphorus atoms and one electron spin precision-patterned into 1.5 nm${}^2$ isotopically pure silicon. The strong resulting confinement potential, without additional confinement gates that can increase cross-talk, leverages the benefits of having both electron and phosphorus nuclear spins. Significantly, the all-to-all connectivity of the nuclear spins provided by the hyperfine interaction not only allows for efficient multi-qubit operations, but also provides individual qubit addressability. Together with the long coherence times of the nuclear and electron spins, this results in all four single qubit fidelities above 99.9% and controlled-Z gates between all pairs of nuclear spins above 99% fidelity. The high control fidelities, combined with >99% fidelity readout of all nuclear spins, allows for the creation of a three-qubit Greenberger-Horne-Zeilinger (GHZ) state with 96.2% fidelity, the highest reported for semiconductor spin qubits so far. Such nuclear spin registers can be coupled via electron exchange, establishing a path for larger scale fault-tolerant quantum processors.
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Submitted 2 March, 2025; v1 submitted 12 April, 2024;
originally announced April 2024.
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3-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction
Authors:
Matthew B. Donnelly,
Joris G. Keizer,
Yousun Chung,
Michelle Y. Simmons
Abstract:
A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit operation but limits device tunability using in-plane gate architectures, requiring vertically separated top-gates to control tunnelling within the device. In this…
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A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit operation but limits device tunability using in-plane gate architectures, requiring vertically separated top-gates to control tunnelling within the device. In this paper we address control of the simplest tunnelling device in Si:P, the tunnel junction. Here we demonstrate that we can tune its conductance by using a vertically separated top-gate aligned with +-5nm precision to the junction. We show that a monolithic 3D epitaxial top-gate increases the capacitive coupling by a factor of 3 compared to in-plane gates, resulting in a tunnel barrier height tunability of 0-186meV. By combining multiple gated junctions in series we extend our monolithic 3D gating technology to implement nanoscale logic circuits including AND and OR gates.
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Submitted 3 November, 2022;
originally announced November 2022.
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Benchmarking high fidelity single-shot readout of semiconductor qubits
Authors:
D. Keith,
S. K. Gorman,
L. Kranz,
Y. He,
J. G. Keizer,
M. A. Broome,
M. Y. Simmons
Abstract:
Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we der…
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Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we derive a model for energy selective state readout based on a charge detector response and examine how to optimise the fidelity by choosing correct experimental parameters. Although we focus on single electron spin readout, the theory presented can be applied to other electronic readout techniques in semiconductors that use a reservoir.
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Submitted 25 February, 2019; v1 submitted 8 November, 2018;
originally announced November 2018.
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Two-Electron Spin Correlations in Precision Placed Donors in Silicon
Authors:
M. A. Broome,
S. K. Gorman,
M. G. House,
S. J. Hile,
J. G. Keizer,
D. Keith,
C. D. Hill,
T. F. Watson,
W. J. Baker,
L. C. L. Hollenberg,
M. Y. Simmons
Abstract:
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means…
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Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means of scanning tunnelling microscopy lithography. We measure anti-correlated spin states between two donor-based spin qubits in silicon separated by 16${\pm}1$ nm. By utilizing an asymmetric system with two phosphorus donors at one qubit site and one on the other (2P-1P), we demonstrate that the exchange interaction can be turned on and off via electrical control of two in-plane phosphorus doped detuning gates. We determine the tunnel coupling between the 2P-1P system to be 200 MHz and provide a roadmap for the observation of two-electron coherent exchange oscillations.
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Submitted 26 July, 2018;
originally announced July 2018.
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Addressable electron spin resonance using donors and donor molecules in silicon
Authors:
Samuel J. Hile,
Lukas Fricke,
Matthew G. House,
Eldad Peretz,
Chin Yi Chen,
Yu Wang,
Matthew Broome,
Samuel K. Gorman,
Joris G. Keizer,
Rajib Rahman,
Michelle Y. Simmons
Abstract:
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donor qubits with separations ~15nm is challenging. Here we show that by using atomic-precision lithography we can place a single P donor next to a 2P molecule 16(+/-1)nm apart…
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Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donor qubits with separations ~15nm is challenging. Here we show that by using atomic-precision lithography we can place a single P donor next to a 2P molecule 16(+/-1)nm apart and use their distinctive hyperfine coupling strengths to address qubits at vastly different resonance frequencies. In particular the single donor yields two hyperfine peaks separated by 97(+/-2.5)MHz, in contrast to the donor molecule which exhibits three peaks separated by 262(+/-10)MHz. Atomistic tight-binding simulations confirm the large hyperfine interaction strength in the 2P molecule with an inter-donor separation of ~0.7nm, consistent with lithographic STM images of the 2P site during device fabrication. We discuss the viability of using donor molecules for built-in addressability of electron spin qubits in silicon.
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Submitted 26 July, 2018;
originally announced July 2018.
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Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot
Authors:
S. K. Gorman,
M. A. Broome,
M. G. House,
S. J. Hile,
J. G. Keizer,
D. Keith,
T. F. Watson,
W. J. Baker,
M. Y. Simmons
Abstract:
We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s…
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We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s and $22.1{\pm}1.0$ s respectively at $B_z{=}2.5$ T.
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Submitted 26 July, 2018;
originally announced July 2018.
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High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon
Authors:
M. A. Broome,
T. F. Watson,
D. Keith,
S. K. Gorman,
M. G. House,
J. G. Keizer,
S. J. Hile,
W. Baker,
M. Y. Simmons
Abstract:
In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to…
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In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to be of the order 3s at 2.5T and observe its predicted decrease as a function of magnetic field, reaching 0.5s at 1T.
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Submitted 26 July, 2018;
originally announced July 2018.
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Tunneling statistics for analysis of spin-readout fidelity
Authors:
Samuel K. Gorman,
Yu He,
Matthew G. House,
Joris G. Keizer,
Daniel Keith,
Lukas Fricke,
Samuel J. Hile,
Matthew A. Broome,
Michelle Y. Simmons
Abstract:
We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field w…
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We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field where spin-readout is possible. We then show how such a measurement can be used to investigate and optimise single electron spin-readout fidelity.
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Submitted 5 October, 2017;
originally announced October 2017.
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Mapping the Chemical Potential Landscape of a Triple Quantum Dot
Authors:
M. A. Broome,
S. K. Gorman,
J. G. Keizer,
T. F. Watson,
S. J. Hile,
W. J. Baker,
M. Y. Simmons
Abstract:
We investigate the non-equilibrium charge dynamics of a triple quantum dot and demonstrate how electron transport through these systems can give rise to non-trivial tunnelling paths. Using a real-time charge sensing method we establish tunnelling pathways taken by particular electrons under well-defined electrostatic configurations. We show how these measurements map to the chemical potentials for…
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We investigate the non-equilibrium charge dynamics of a triple quantum dot and demonstrate how electron transport through these systems can give rise to non-trivial tunnelling paths. Using a real-time charge sensing method we establish tunnelling pathways taken by particular electrons under well-defined electrostatic configurations. We show how these measurements map to the chemical potentials for different charge states across the system. We use a modified Hubbard Hamiltonian to describe the system dynamics and show that it reproduces all experimental observations.
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Submitted 12 September, 2016;
originally announced September 2016.
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Extracting inter-dot tunnel couplings between few donor quantum dots in silicon
Authors:
Samuel K. Gorman,
Matthew A. Broome,
Joris G. Keizer,
Thomas F. Watson,
Samuel J. Hile,
William J. Baker,
Michelle Y. Simmons
Abstract:
The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here, we describe a method to extract the $t_c$ between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on…
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The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here, we describe a method to extract the $t_c$ between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract ${t}_{\rm{c}}=5.5\pm 1.8\;{\rm{GHz}}$ and ${t}_{\rm{c}}=2.2\pm 1.3\;{\rm{GHz}}$ between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of $t_c$ for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor.
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Submitted 5 June, 2016; v1 submitted 2 June, 2016;
originally announced June 2016.
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Single-charge detection by an atomic precision tunnel junction
Authors:
M. G. House,
E. Peretz,
J. G. Keizer,
S. J. Hile,
M. Y. Simmons
Abstract:
We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5nm wide and 17.2nm long defined by an atomically precise phosphorus doping profile in silicon. The conductance of the junction responds to a nearby gate potential and also to changes in the charge state of a quantum dot patterned 52nm away. The response of this detector is monotonic across the entire working vol…
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We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5nm wide and 17.2nm long defined by an atomically precise phosphorus doping profile in silicon. The conductance of the junction responds to a nearby gate potential and also to changes in the charge state of a quantum dot patterned 52nm away. The response of this detector is monotonic across the entire working voltage range of the device, which will make it particularly useful for studying systems of multiple quantum dots. The charge sensitivity is maximized when the junction is most conductive, suggesting that more sensitive detection can be achieved by shortening the length of the junction to increase its conductance.
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Submitted 20 March, 2014;
originally announced March 2014.
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Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms
Authors:
V. Jovanov,
T. Eissfeller,
S. Kapfinger,
E. C. Clark,
F. Klotz,
M. Bichler,
J. G. Keizer,
P. M. Koenraad,
M. S. Brandt,
G. Abstreiter,
J. J. Finley
Abstract:
Non-linear Zeeman splitting of neutral excitons is observed in composition engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic origin is explained. Eight-band k.p simulations, performed using realistic dot parameters extracted from cross-sectional scanning tunneling microscopy, reveal that a quadratic contribution to the Zeeman energy originates from a spin dependent mixing o…
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Non-linear Zeeman splitting of neutral excitons is observed in composition engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic origin is explained. Eight-band k.p simulations, performed using realistic dot parameters extracted from cross-sectional scanning tunneling microscopy, reveal that a quadratic contribution to the Zeeman energy originates from a spin dependent mixing of heavy and light hole orbital states in the dot. The dilute In-composition (x<0.35) and large lateral size (40-50 nm) of the quantum dots investigated is shown to strongly enhance the non-linear excitonic Zeeman gap, providing a blueprint to enhance such magnetic non-linearities via growth engineering.
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Submitted 12 December, 2011;
originally announced December 2011.
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Shape control of QDs studied by cross-sectional scanning tunneling microscopy
Authors:
J. G. Keizer,
M. Bozkurt,
J. Bocquel,
P. M. Koenraad,
T. Mano,
T. Noda,
K. Sakoda,
E. C. Clark,
M. Bichler,
G. Abstreiter,
J. J. Finley,
W. Lu,
T. Rohel,
H. Folliot,
N. Bertru
Abstract:
In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thicknes…
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In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thickness of the first capping layer. Concerning the technique of antimony capping we show that the surfactant properties of Sb result in the preservation of the shape of strained InAs/InP QDs during overgrowth. This could be achieved by both a growth interrupt under Sb flux and capping with a thin GaAsSb layer prior to overgrowth of the uncapped QDs. The technique of droplet epitaxy was investigated by a structural analysis of strain free GaAs/AlGaAs QDs. We show that the QDs have a Gaussian shape, that the WL is less than 1 bilayer thick, and that minor intermixing of Al with the QDs takes place.
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Submitted 15 November, 2010;
originally announced November 2010.
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Composition profiling InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunnelling microscopy
Authors:
A. D. Giddings,
J. G. Keizer,
M. Hara,
G. J. Hamhuis,
H. Yuasa,
H. Fukuzawa,
P. M. Koenraad
Abstract:
This study compares cross-sectional scanning tunnelling microscopy (XSTM) and atom probe tomography (APT). We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two nanostructural analysis techniques. We studied the composition of the wetting layer and the QDs, and performed quantitative comparisons of the indium concentration…
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This study compares cross-sectional scanning tunnelling microscopy (XSTM) and atom probe tomography (APT). We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two nanostructural analysis techniques. We studied the composition of the wetting layer and the QDs, and performed quantitative comparisons of the indium concentration profiles measured by each method. We show that computational models of the wetting layer and the QDs, based on experimental data, are consistent with both analytical approaches. This establishes a link between the two techniques and shows their complimentary behaviour, an advantage which we exploit in order to highlight unique features of the examined QD material.
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Submitted 24 January, 2011; v1 submitted 28 October, 2010;
originally announced October 2010.
