Showing 1–10 of 10 results for author: Keith, D

Valley Splitting Correlations Across a Silicon Quantum Well

Authors: Jonathan C. Marcks, Emily Eagen, Emma C. Brann, Merritt P. Losert, Tali Oh, John Reily, Christopher S. Wang, Daniel Keith, Fahd A. Mohiyaddin, Florian Luthi, Matthew J. Curry, Jiefei Zhang, F. Joseph Heremans, Mark Friesen, Mark A. Eriksson

Abstract: Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the… ▽ More Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the Si/SiGe interfaces, and while Si devices are compatible with large-scale semiconductor manufacturing, achieving a uniformly large valley splitting energy across a many-qubit device spanning mesoscopic distances is an outstanding challenge. In this work we study valley splitting variations in a 1D quantum dot array manufactured by Intel. We observe correlations in valley splitting, at both sub-100nm (single gate) and >1μm (device) lengthscales, that are consistent with alloy disorder-dominated theory and simulation. Our results develop the mesoscopic understanding of Si/SiGe heterostructures necessary for scalable device design. △ Less

Submitted 16 April, 2025; originally announced April 2025.

Comments: 10 pages, 6 figures

Operating two exchange-only qubits in parallel

Authors: Mateusz T. Mądzik, Florian Luthi, Gian Giacomo Guerreschi, Fahd A. Mohiyaddin, Felix Borjans, Jason D. Chadwick, Matthew J. Curry, Joshua Ziegler, Sarah Atanasov, Peter L. Bavdaz, Elliot J. Connors, J. Corrigan, H. Ekmel Ercan, Robert Flory, Hubert C. George, Benjamin Harpt, Eric Henry, Mohammad M. Islam, Nader Khammassi, Daniel Keith, Lester F. Lampert, Todor M. Mladenov, Randy W. Morris, Aditi Nethwewala, Samuel Neyens , et al. (16 additional authors not shown)

Abstract: Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in qua… ▽ More Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in quantum dots in the array is critical. Furthermore, it is necessary to execute high-fidelity quantum operations concurrently to make full use of the limited coherence of individual qubits. Here, we demonstrate the parallel operation of two exchange-only qubits, consisting of six quantum dots in a linear arrangement. Using randomized benchmarking techniques, we show that issuing pulses on the five barrier gates to modulate exchange interactions in a maximally parallel way maintains the quality of qubit control relative to sequential operation. The techniques developed to perform parallel exchange pulses can be readily adapted to other quantum-dot based encodings. Moreover, we show the first experimental demonstrations of an iSWAP gate and of a charge-locking Pauli spin blockade readout method. The results are validated using cross-entropy benchmarking, a technique useful for performance characterization of larger quantum computing systems; here it is used for the first time on a quantum system based on semiconductor technology. △ Less

Submitted 1 April, 2025; originally announced April 2025.

12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line

Authors: Hubert C. George, Mateusz T. Mądzik, Eric M. Henry, Andrew J. Wagner, Mohammad M. Islam, Felix Borjans, Elliot J. Connors, J. Corrigan, Matthew Curry, Michael K. Harper, Daniel Keith, Lester Lampert, Florian Luthi, Fahd A. Mohiyaddin, Sandra Murcia, Rohit Nair, Rambert Nahm, Aditi Nethwewala, Samuel Neyens, Bishnu Patra, Roy D. Raharjo, Carly Rogan, Rostyslav Savytskyy, Thomas F. Watson, Josh Ziegler , et al. (7 additional authors not shown)

Abstract: Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code name… ▽ More Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code named Tunnel Falls. These devices are fabricated using immersion and extreme ultraviolet lithography (EUV), along with other standard high-volume manufacturing (HVM) processes, as well as production-level process control. We present key device features and fabrication details, as well as qubit characterization results confirming device functionality. These results corroborate our fabrication methods and are a crucial step towards scaling of extensible 2D qubit array schemes. △ Less

Submitted 20 December, 2024; v1 submitted 21 October, 2024; originally announced October 2024.

Probing single electrons across 300 mm spin qubit wafers

Authors: Samuel Neyens, Otto K. Zietz, Thomas F. Watson, Florian Luthi, Aditi Nethwewala, Hubert C. George, Eric Henry, Mohammad Islam, Andrew J. Wagner, Felix Borjans, Elliot J. Connors, J. Corrigan, Matthew J. Curry, Daniel Keith, Roza Kotlyar, Lester F. Lampert, Mateusz T. Madzik, Kent Millard, Fahd A. Mohiyaddin, Stefano Pellerano, Ravi Pillarisetty, Mick Ramsey, Rostyslav Savytskyy, Simon Schaal, Guoji Zheng , et al. (5 additional authors not shown)

Abstract: Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient dev… ▽ More Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices. △ Less

Submitted 3 May, 2024; v1 submitted 10 July, 2023; originally announced July 2023.

Comments: 33 pages, 4 figures, 10 extended data figures. Supplementary Information available under "Ancillary files."

Benchmarking high fidelity single-shot readout of semiconductor qubits

Authors: D. Keith, S. K. Gorman, L. Kranz, Y. He, J. G. Keizer, M. A. Broome, M. Y. Simmons

Abstract: Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we der… ▽ More Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we derive a model for energy selective state readout based on a charge detector response and examine how to optimise the fidelity by choosing correct experimental parameters. Although we focus on single electron spin readout, the theory presented can be applied to other electronic readout techniques in semiconductors that use a reservoir. △ Less

Submitted 25 February, 2019; v1 submitted 8 November, 2018; originally announced November 2018.

Comments: 19 pages, 8 figures

Two-Electron Spin Correlations in Precision Placed Donors in Silicon

Authors: M. A. Broome, S. K. Gorman, M. G. House, S. J. Hile, J. G. Keizer, D. Keith, C. D. Hill, T. F. Watson, W. J. Baker, L. C. L. Hollenberg, M. Y. Simmons

Abstract: Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means… ▽ More Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means of scanning tunnelling microscopy lithography. We measure anti-correlated spin states between two donor-based spin qubits in silicon separated by 16${\pm}1$ nm. By utilizing an asymmetric system with two phosphorus donors at one qubit site and one on the other (2P-1P), we demonstrate that the exchange interaction can be turned on and off via electrical control of two in-plane phosphorus doped detuning gates. We determine the tunnel coupling between the 2P-1P system to be 200 MHz and provide a roadmap for the observation of two-electron coherent exchange oscillations. △ Less

Submitted 26 July, 2018; originally announced July 2018.

Comments: 19 pages, 10 figures - DEV053 - Team Viper

Journal ref: Nat. Comm., 980, 9, 1, (2018)

Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot

Authors: S. K. Gorman, M. A. Broome, M. G. House, S. J. Hile, J. G. Keizer, D. Keith, T. F. Watson, W. J. Baker, M. Y. Simmons

Abstract: We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s… ▽ More We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s and $22.1{\pm}1.0$ s respectively at $B_z{=}2.5$ T. △ Less

Submitted 26 July, 2018; originally announced July 2018.

Comments: 5 pages, 4 figures - DEV053 - Team Viper

Journal ref: Appl. Phys. Lett. 112, 243105 (2018)

High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon

Authors: M. A. Broome, T. F. Watson, D. Keith, S. K. Gorman, M. G. House, J. G. Keizer, S. J. Hile, W. Baker, M. Y. Simmons

Abstract: In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to… ▽ More In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to be of the order 3s at 2.5T and observe its predicted decrease as a function of magnetic field, reaching 0.5s at 1T. △ Less

Submitted 26 July, 2018; originally announced July 2018.

Comments: 8 pages, 4 figures - DEV053 - Team Viper

Journal ref: Phys. Rev. Lett. 119, 046802 (2017)

Tunneling statistics for analysis of spin-readout fidelity

Authors: Samuel K. Gorman, Yu He, Matthew G. House, Joris G. Keizer, Daniel Keith, Lukas Fricke, Samuel J. Hile, Matthew A. Broome, Michelle Y. Simmons

Abstract: We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field w… ▽ More We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field where spin-readout is possible. We then show how such a measurement can be used to investigate and optimise single electron spin-readout fidelity. △ Less

Submitted 5 October, 2017; originally announced October 2017.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. Applied, 8, 034019, 2017

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Authors: Adam Bermeister, Daniel Keith, Dimitrie Culcer

Abstract: Spin-orbit coupling is ubiquitous in quantum dot quantum computing architectures, and makes spin qubits susceptible to charge noise. We derive a Hamiltonian describing the effect of spin-orbit and noise on a single-spin qubit in a quantum dot. Relaxation is due to noise coupling different orbital levels and is dominated by screened whole charge defects near the dot. Dephasing stems from noise caus… ▽ More Spin-orbit coupling is ubiquitous in quantum dot quantum computing architectures, and makes spin qubits susceptible to charge noise. We derive a Hamiltonian describing the effect of spin-orbit and noise on a single-spin qubit in a quantum dot. Relaxation is due to noise coupling different orbital levels and is dominated by screened whole charge defects near the dot. Dephasing stems from noise causing relative fluctuations between orbital levels, and is driven by screened whole charge defects and unscreened dipole defects in the substrate. Dephasing times are vastly different between common materials such as Si and GaAs. They can be enhanced by increasing gate fields, choosing materials with weak spin-orbit such as Si, making dots narrower, or using accumulation dots. △ Less

Submitted 13 November, 2014; v1 submitted 18 August, 2014; originally announced August 2014.

Journal ref: Appl. Phys. Lett. 105, 192102 (2014)