Showing 1–2 of 2 results for author: Kaydashev, V E
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VO$_2$ films grown on TiO$_2$ sub-layer: influence of thickness on structural, electrical and optical properties
Authors:
M. E. Kutepov,
V. E. Kaydashev,
D. V. Stryukov,
A. S. Konstantinov,
A. V. Nikolskiy,
A. T. Kozakov,
A. D. Morozov,
E. M. Kaidashev
Abstract:
Vanadium dioxide with metal-to-insulator transition (MIT) that is triggered by heat, current or light is a promising material for modern active THz/mid-IR metasurfaces and all-optical big data processing systems. Multilayer VO$_2$-based active metasurfaces are urgently needed however several important issues related to VO$_2$ properties in VO$_2$/TiO$_2$/Al$_2$O$_3$ films should be thoroughly exam…
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Vanadium dioxide with metal-to-insulator transition (MIT) that is triggered by heat, current or light is a promising material for modern active THz/mid-IR metasurfaces and all-optical big data processing systems. Multilayer VO$_2$-based active metasurfaces are urgently needed however several important issues related to VO$_2$ properties in VO$_2$/TiO$_2$/Al$_2$O$_3$ films should be thoroughly examined first. We study electrical, optical and structural properties of VO$_2$ films as well as their composition and switching characteristics as function of the VO$_2$ layer thickness in VO$_2$/TiO$_2$ composites. XRD analysis revealed an epitaxial growth of films with deformation of the monoclinic VO$_2$ lattice to hexagonal symmetry. Reduced VO$_2$ layer thickness from 170 nm to 20 nm results in increased phase transition temperature while the width of the resistance versus temperature hysteresis loop R(T) remains constant at ~6C for all VO$_2$ thicknesses in the range of 20-170 nm. The resistance alteration ratio is reduced from 4.2e3 to 2.7e2 in thinner films. Raman spectra reveal a significant shift of VO$_2$ lattice vibration modes for films thinner than 30 nm claiming a great structural strain whereas modes position for thicker VO$_2$ layers are similar to those in bulk structure. Composition of VO$_2$ films has revealed only a minor alteration of VO$_2$/V$_2$O$_5$ phases ratio from 1.6 to 1.8 when the film thickness has been increased from 20 nm to 50 nm. Investigation of surface elemental composition and valence states of VO$_2$ films revealed that VO$_2$/V$_2$O$_5$ ratio remains practically unchanged with thickness reduction. The study of electrical MIT dynamics revealed the switching time of a 50 nm VO$_2$ film to be as low as 800 ns.
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Submitted 22 November, 2024;
originally announced November 2024.
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Spin-polarized electronic structure of the core-shell ZnO/ZnO:Mn nanowires probed by x-ray absorption and emission spectroscopy
Authors:
A. A. Guda,
N. Smolentsev,
M. Rovezzi,
E. M. Kaidashev,
V. E. Kaydashev,
A. N. Kravtsova,
V. L. Mazalova,
A. P. Chaynikov,
E. Weschke,
P. Glatzel,
A. V. Soldatov
Abstract:
The combination of x-ray spectroscopy methods complemented with theoretical analysis unravels the coexistence of paramagnetic and antiferromagnetic phases in the Zn_0.9Mn_0.1O shell deposited onto array of wurtzite ZnO nanowires. The shell is crystalline with orientation toward the ZnO growth axis, as demonstrated by X-ray linear dichroism. EXAFS analysis confirmed that more than 90% of Mn atoms s…
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The combination of x-ray spectroscopy methods complemented with theoretical analysis unravels the coexistence of paramagnetic and antiferromagnetic phases in the Zn_0.9Mn_0.1O shell deposited onto array of wurtzite ZnO nanowires. The shell is crystalline with orientation toward the ZnO growth axis, as demonstrated by X-ray linear dichroism. EXAFS analysis confirmed that more than 90% of Mn atoms substituted Zn in the shell while fraction of secondary phases was below 10%. The value of manganese spin magnetic moment was estimated from the Mn Kβ X-ray emission spectroscopy to be 4.3μB which is close to the theoretical value for substitutional Mn_Zn. However the analysis of L_2,3 x-ray magnetic circular dichroism data showed paramagnetic behaviour with saturated spin magnetic moment value of 1.95μB as determined directly from the spin sum rule. After quantitative analysis employing atomic multiplet simulations such difference was explained by a coexistence of paramagnetic phase and local antiferromagnetic coupling of Mn magnetic moments. Finally, spin-polarized electron density of states was probed by the spin-resolved Mn K-edge XANES spectroscopy and consequently analyzed by band structure calculations.
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Submitted 30 August, 2013;
originally announced August 2013.
