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2D Hexagonal Boron Nitride-based Anticorrosion Coatings
Authors:
Onurcan Kaya,
Luca Gabatel,
Sebastiano Bellani,
Fabrizio Barberis,
Francesco Bonaccorso,
Ivan Cole,
Stephan Roche
Abstract:
The corrosion of metallic surfaces poses significant challenges across industries such as petroleum, energy, and biomedical sectors, leading to structural degradation, safety risks, and substantial maintenance costs. Traditional organic and metallic coatings provide some protection, but their limited durability and susceptibility to harsh environmental conditions necessitate the development of mor…
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The corrosion of metallic surfaces poses significant challenges across industries such as petroleum, energy, and biomedical sectors, leading to structural degradation, safety risks, and substantial maintenance costs. Traditional organic and metallic coatings provide some protection, but their limited durability and susceptibility to harsh environmental conditions necessitate the development of more advanced and efficient solutions. This has driven significant interest in two-dimensional (2D) materials, with graphene extensively studied for its exceptional mechanical strength and impermeability to gases and ions. However, while graphene offers short-term corrosion protection, its high electrical conductivity presents a long-term issue by promoting galvanic corrosion on metal surfaces. In contrast, hexagonal boron nitride (h-BN) has emerged as a promising alternative for anticorrosion coatings. h-BN combines exceptional chemical stability, impermeability, and electrical insulation, making it particularly suited for long-term protection in highly corrosive or high-temperature environments. While h-BN holds promise as anticorrosion material, challenges such as structural defects, agglomeration of nanosheets, and poor dispersion within coatings limit its performance. This review provides a comprehensive analysis of recent advancements in addressing these challenges, including novel functionalization strategies, scalable synthesis methods, and hybrid systems that integrate h-BN with complementary materials. By bridging the gap between fundamental research and industrial applications, this review outlines the potential for h-BN to revolutionize anticorrosion technologies. These obstacles necessitate advanced strategies such as surface functionalization to improve compatibility with polymer matrices and dispersion optimization to minimize agglomeration.
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Submitted 27 March, 2025; v1 submitted 2 December, 2024;
originally announced December 2024.
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Robust quantum engineering of current flow in carbon nanostructures at room temperature
Authors:
Gaetano Calogero,
Isaac Alcón,
Onurcan Kaya,
Nick Papior,
Aron W. Cummings,
Mads Brandbyge,
Stephan Roche
Abstract:
Bottom-up on-surface synthesis enables the fabrication of carbon nanostructures with atomic precision. Good examples are graphene nanoribbons (GNRs), 1D conjugated polymers, and nanoporous graphenes (NPGs), which are gathering increasing attention for future carbon nanoelectronics. A key step is the ability to manipulate current flow within these nanomaterials. Destructive quantum interference (QI…
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Bottom-up on-surface synthesis enables the fabrication of carbon nanostructures with atomic precision. Good examples are graphene nanoribbons (GNRs), 1D conjugated polymers, and nanoporous graphenes (NPGs), which are gathering increasing attention for future carbon nanoelectronics. A key step is the ability to manipulate current flow within these nanomaterials. Destructive quantum interference (QI), long studied in the field of single-molecule electronics, has been proposed as the most effective way to achieve such control with molecular-scale precision. However, for practical applications, it is essential that such QI-engineering remains effective near or above room temperature. To assess this important point, here we combine large-scale molecular dynamics simulations and quantum transport calculations and focus our study on NPGs formed as arrays of laterally bonded GNRs. By considering various NPGs with different inter-GNR chemical connections we disentangle the different factors determining electronic transport in these carbon nanomaterials at 300 K. Our findings unequivocally demonstrate that QI survives at room temperature, with thermal vibrations weakly restricting current flow along GNRs while completely blocking transport across GNRs. Our results thus pave the way towards the future realization of QI-engineered carbon nanocircuitry operating at room temperature, which is a fundamental step towards carbon-based nanoelectronics and quantum technologies.
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Submitted 11 July, 2024;
originally announced July 2024.
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Exploring Dielectric Properties in Models of Amorphous Boron Nitride
Authors:
Thomas Galvani,
Ali K. Hamze,
Laura Caputo,
Onurcan Kaya,
Simon Dubois,
Luigi Colombo,
Viet-Hung Nguyen,
Yongwoo Shin,
Hyeon-Jin Shin,
Jean-Christophe Charlier,
Stephan Roche
Abstract:
We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about $100$ atoms in the periodic cell) sample sizes to explore the emergence of mid-gap states and its correlation with structural features. Next, by using a simplified tight-binding electro…
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We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about $100$ atoms in the periodic cell) sample sizes to explore the emergence of mid-gap states and its correlation with structural features. Next, by using a simplified tight-binding electronic model, we analyse the dielectric functions for complex three dimensional models (containing about $10.000$ atoms) embedding varying concentrations of ${\rm sp^{1}, sp^{2}}$ and ${\rm sp^3}$ bonds between B and N atoms. Within the limits of these methodologies, the resulting value of the zero-frequency dielectric constant is shown to be influenced by the population density of such mid-gap states and their localization characteristics. We observe nontrivial correlations between the structure-induced electronic fluctuations and the resulting dielectric constant values. Our findings are however just a first step in the quest of accessing fully accurate dielectric properties of as-grown amorphous BN of relevance for interconnect technologies and beyond.
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Submitted 18 March, 2024;
originally announced March 2024.
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Amorphous Boron Nitride as an Ultrathin Copper Diffusion Barrier for Advanced Interconnects
Authors:
Onurcan Kaya,
Hyeongjoon Kim,
Byeongkyu Kim,
Thomas Galvani,
Luigi Colombo,
Mario Lanza,
Hyeon-Jin Shin,
Ivan Cole,
Hyeon Suk Shin,
Stephan Roche
Abstract:
This study focuses on amorphous boron nitride ($\rm α$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-line (BEOL) interconnects. Owing to its ultralow dielectric constant and robust barrier properties, $\rm α$-BN is examined as an alternative to conventional low-k dielectrics. The investigati…
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This study focuses on amorphous boron nitride ($\rm α$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-line (BEOL) interconnects. Owing to its ultralow dielectric constant and robust barrier properties, $\rm α$-BN is examined as an alternative to conventional low-k dielectrics. The investigation primarily employs theoretical modelling, using a Gaussian Approximation Potential, to simulate and understand the atomic-level interactions. This machine learning-based approach allows the performance of realistic simulations of amorphous structure of $\rm α$-BN, enabling the exploration of the impact of different film morphologies on barrier efficacy. Furthermore, we studied the electronic and optical properties of the films using a simple Tight-Binding model. In addition to the theoretical studies, we performed diffusion studies of copper through PECVD $\rm α$-BN on Si. The results from both the theoretical and experimental investigations highlight the potential of $\rm α$-BN as a highly effective diffusion barrier, suitable for integration in nanoelectronics. This research shows that $\rm α$-BN is a promising candidate for BEOL interconnects but also demonstrates the synergy of advanced computational models and experimental methods in material innovation for semiconductor applications.
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Submitted 2 February, 2025; v1 submitted 2 February, 2024;
originally announced February 2024.
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Impact of Hydrogenation on the Stability and Mechanical Properties of Amorphous Boron Nitride
Authors:
Onurcan Kaya,
Luigi Colombo,
Aleandro Antidormi,
Marco A. Villena,
Mario Lanza,
Ivan Cole,
Stephan Roche
Abstract:
Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron nitride (aBN) films have a very low dielectric constant, high density (above 2.1 g/cm3), high thermal stability, and mechanical properties. The excellent properties o…
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Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron nitride (aBN) films have a very low dielectric constant, high density (above 2.1 g/cm3), high thermal stability, and mechanical properties. The excellent properties of aBN derive from the nature and degree of disorder, which can be controlled at fabrication, allowing tuning of the physical properties for desired applications. Here, we report an improvement in the stability and mechanical properties of amorphous boron nitride upon hydrogen doping. With the introduction of a Gaussian approximation potential (GAP) for atomistic simulations, we investigate the changing morphology of amorphous boron nitride with varying H doping concentrations. We found that for 8 at% of H doping, the concentration of $sp^3$-hybridized atoms reaches a maximum which leads to an improvement of thermal stability and mechanical properties by 20%. These results will be a guideline for experimentalists and process engineers to tune the growth conditions of amorphous boron nitride films for numerous applications.
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Submitted 22 December, 2023; v1 submitted 27 October, 2023;
originally announced October 2023.
