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Multi-mode Brownian Dynamics of a Nanomechanical Resonator in a Viscous Fluid
Authors:
H. Gress,
J. Barbish,
C. Yanik,
I. I. Kaya,
R. T. Erdogan,
M. S. Hanay,
M. González,
O. Svitelskiy,
M. R. Paul,
K. L. Ekinci
Abstract:
Brownian motion imposes a hard limit on the overall precision of a nanomechanical measurement. Here, we present a combined experimental and theoretical study of the Brownian dynamics of a quintessential nanomechanical system, a doubly-clamped nanomechanical beam resonator, in a viscous fluid. Our theoretical approach is based on the fluctuation-dissipation theorem of statistical mechanics: We dete…
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Brownian motion imposes a hard limit on the overall precision of a nanomechanical measurement. Here, we present a combined experimental and theoretical study of the Brownian dynamics of a quintessential nanomechanical system, a doubly-clamped nanomechanical beam resonator, in a viscous fluid. Our theoretical approach is based on the fluctuation-dissipation theorem of statistical mechanics: We determine the dissipation from fluid dynamics; we incorporate this dissipation into the proper elastic equation to obtain the equation of motion; the fluctuation-dissipation theorem then directly provides an analytical expression for the position-dependent power spectral density (PSD) of the displacement fluctuations of the beam. We compare our theory to experiments on nanomechanical beams immersed in air and water, and obtain excellent agreement. Within our experimental parameter range, the Brownian force noise driving the nanomechanical beam has a colored PSD due to the ``memory" of the fluid; the force noise remains mode-independent and uncorrelated in space. These conclusions are not only important for nanomechanical sensing but also provide insight into the fluctuations of elastic systems at any length scale.
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Submitted 1 November, 2023;
originally announced November 2023.
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Strong localization in a suspended monolayer graphene by intervalley scattering
Authors:
Cenk Yanik,
Vahid Sazgari,
Abdulkadir Canatar,
Yaser Vaheb,
Ismet I. Kaya
Abstract:
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pressure cycle to allow short range impurities to be adsorbed directly on the ultra clean graphene surface. The adsorption process generated a strong temp…
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A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pressure cycle to allow short range impurities to be adsorbed directly on the ultra clean graphene surface. The adsorption process generated a strong temperature and electric field dependent behavior on the conductance of the graphene device. The conductance around the neutrality point is observed to be reduced from around $e^2/h$ at 30 K to $\sim0.01~e^2/h$ at 20 mK. A direct transition from insulator to quantum Hall conductor within $\approx0.4~T$ accompanied by broken-symmetry-induced $ν=0,\pm1$ plateaux confirms the presence of intervalley scatterers.
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Submitted 13 February, 2021; v1 submitted 21 June, 2020;
originally announced June 2020.
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Interaction-induced crossover between weak anti-localization and weak localization in a disordered InAs/GaSb double quantum well
Authors:
Vahid Sazgari,
Gerard Sullivan,
Ismet I. Kaya
Abstract:
We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we observe a crossover from weak anti-localization (WAL) to weak localization (WL), when the inelastic phase breaking time decreases below spin-orbit characteristic time as a result of enhanced electron-electron interactio…
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We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we observe a crossover from weak anti-localization (WAL) to weak localization (WL), when the inelastic phase breaking time decreases below spin-orbit characteristic time as a result of enhanced electron-electron interactions at lower carrier concentrations. The same crossover is observed with increasing temperature. The linear temperature behavior of inelastic scattering rate indicates that the dominant phase breaking mechanism in our 2D system is due to electron-electron interaction.
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Submitted 26 November, 2019;
originally announced November 2019.
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Localization of trivial edge states in InAs/GaSb composite quantum wells
Authors:
Vahid Sazgari,
Gerard Sullivan,
İsmet İ. Kaya
Abstract:
InAs/GaSb heterostructure is one of the systems where quantum spin Hall effect is predicted to arise. However, as confirmed by recent experimental studies, the most significant highlight of the effect i.e., the conductance quantization due to non-trivial edge states is obscured by spurious conductivity arising from trivial edge states. In this work, we present experimental observation of strong lo…
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InAs/GaSb heterostructure is one of the systems where quantum spin Hall effect is predicted to arise. However, as confirmed by recent experimental studies, the most significant highlight of the effect i.e., the conductance quantization due to non-trivial edge states is obscured by spurious conductivity arising from trivial edge states. In this work, we present experimental observation of strong localization of trivial edge modes in an InAs/GaSb heterostructure which was weakly disordered by silicon delta-like dopants within the InAs layer. The edge conduction which is characterized by a temperature-independent behavior at low temperatures and a power law at high temperatures is observed to be exponentially scaled with the length of the edge. Comprehensive analysis on measurements with a range of devices is in agreement with the localization theories in quasi one-dimensional electronic systems.
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Submitted 23 October, 2019;
originally announced October 2019.
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Strongly temperature dependent resistance of meander-patterned graphene
Authors:
G. Yu. Vasileva,
D. Smirnov,
Yu. B. Vasilyev,
M. O. Nestoklon,
N. S. Averkiev,
S. Novikov,
I. I. Kaya,
R. J. Haug
Abstract:
We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with theory shows that this temperature dependence originates from the weak localization effect observed over a broad temper…
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We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors.
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Submitted 13 December, 2016;
originally announced December 2016.
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Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices
Authors:
Cenk Yanik,
Ismet I. Kaya
Abstract:
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized value is weakly dependent on the longitudinal resistivity up to current density of 5 A/m, where the Hall resistance remains quantized even when the longitudinal…
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We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized value is weakly dependent on the longitudinal resistivity up to current density of 5 A/m, where the Hall resistance remains quantized even when the longitudinal resistance increases monotonously with the current. Then a collapse in the quantized resistance occurs while longitudinal resistance keeps its gradual increase. The exponential increase of the conductivity with respect to the current suggests impurity mediated inter-Landau level scattering as the mechanism of the breakdown. The results are interpreted as the strong variation of the breakdown behavior throughout the sample due to the randomly distributed scattering centers that mediates the breakdown.
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Submitted 19 February, 2013;
originally announced February 2013.
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Growth of thin graphene layers on stacked SiC surface in ultra high vacuum
Authors:
C. Celebi,
C. Yanik,
A. G. Demirkol,
Ismet I. Kaya
Abstract:
We demonstrate a technique to produce thin graphene layers on C-face of SiC under ultra high vacuum conditions. A stack of two SiC substrates comprising a half open cavity at the interface is used to partially confine the depleted Si atoms from the sample surface during the growth. We observe that this configuration significantly slows the graphene growth to easily controllable rates on C-face SiC…
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We demonstrate a technique to produce thin graphene layers on C-face of SiC under ultra high vacuum conditions. A stack of two SiC substrates comprising a half open cavity at the interface is used to partially confine the depleted Si atoms from the sample surface during the growth. We observe that this configuration significantly slows the graphene growth to easily controllable rates on C-face SiC in UHV environment. Results of low-energy electron diffractometry and Raman spectroscopy measurements on the samples grown with stacking configuration are compared to those of the samples grown by using bare UHV sublimation process.
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Submitted 8 September, 2011;
originally announced September 2011.
