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Stacking-induced ferroelectricity in tetralayer graphene
Authors:
Amit Singh,
Shuigang Xu,
Patrick Johansen Sarsfield,
Pablo Diaz Nunez,
Ziwei Wang,
Sergey Slizovskiy,
Nicholas Kay,
Jun Yin,
Yashar Mayamei,
Takashi Taniguchi,
Kenji Watanabe,
Qian Yang,
Kostya S. Novoselov,
Vladimir I. Falko,
Artem Mishchenko
Abstract:
Recent studies have reported emergent ferroelectric behavior in twisted or moiré-engineered graphene-based van der Waals heterostructures, yet the microscopic origin of this effect remains under debate. Pristine mono- or few-layer graphene lacks a permanent dipole due to its centrosymmetric lattice, making the emergence of ferroelectricity unlikely. However, mixed-stacked graphene, such as the ABC…
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Recent studies have reported emergent ferroelectric behavior in twisted or moiré-engineered graphene-based van der Waals heterostructures, yet the microscopic origin of this effect remains under debate. Pristine mono- or few-layer graphene lacks a permanent dipole due to its centrosymmetric lattice, making the emergence of ferroelectricity unlikely. However, mixed-stacked graphene, such as the ABCB tetralayer configuration, breaks both inversion and mirror symmetry and has been theoretically predicted to support electrically switchable dipoles. ABCB graphene represents the simplest natural graphene polytype exhibiting intrinsic out-of-plane polarization, arising from asymmetric charge carrier distribution across its layers. Here, we report robust ferroelectric behavior in dual-gated, non-aligned ABCB tetralayer graphene encapsulated in hexagonal boron nitride. The device exhibits pronounced hysteresis in resistance under both top and bottom gate modulation, with the effect persisting up to room temperature. This hysteresis originates from reversible layer-polarized charge reordering, driven by gate-induced transitions between ABCB and BCBA stacking configurations -- without requiring moiré superlattices. Our findings establish stacking-order-induced symmetry breaking as a fundamental route to electronic ferroelectricity in graphene and open pathways for non-volatile memory applications based on naturally occurring mixed-stacked multilayer graphene.
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Submitted 10 April, 2025;
originally announced April 2025.
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Effects of Reduced Interlayer Interactions on the K-point Excitons of MoS$_2$ Nanoscrolls
Authors:
Sagnik Chatterjee,
Tamaghna Chowdhury,
Pablo Díaz Núñez,
Nicholas Kay,
Manisha Rajput,
Sooyeon Hwang,
Ivan Timokhin,
Artem Mishchenko,
Atikur Rahman
Abstract:
Transition metal dichalcogenide (TMD) nanoscrolls (NS) exhibit significant photoluminescence (PL) signals despite their multilayer structure, which cannot be explained by the strained multilayer description of NS. Here, we investigate the interlayer interactions in NS to address this discrepancy. The reduction of interlayer interactions in NS is attributed to two factors: (1) the symmetry-broken m…
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Transition metal dichalcogenide (TMD) nanoscrolls (NS) exhibit significant photoluminescence (PL) signals despite their multilayer structure, which cannot be explained by the strained multilayer description of NS. Here, we investigate the interlayer interactions in NS to address this discrepancy. The reduction of interlayer interactions in NS is attributed to two factors: (1) the symmetry-broken mixed stacking order between neighbouring layers due to misalignment, and (2) the high inhomogeneity in the strain landscape resulting from the unique Archimedean spiral-like geometry with positive eccentricity. These were confirmed through transmission electron microscopy, field emission scanning electron microscopy and atomic force microscopy. To probe the effect of reduction of interlayer interactions in multilayered MoS$_2$ nanoscrolls, low-temperature PL spectroscopy was employed investigating the behaviour of K-point excitons. The effects of reduced interlayer interactions on exciton-phonon coupling (EXPC), exciton energy, and exciton oscillator strength are discussed, providing insights into the unique properties of TMD nanoscrolls.
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Submitted 18 April, 2024;
originally announced April 2024.
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Highly ordered LIPSS on Au thin film for plasmonic sensing fabricated by double femtosecond pulses
Authors:
Fotis Fraggelakis,
Panagiotis Lingos,
George D. Tsibidis,
Emma Cusworth,
N. Kay,
L. Fumagalli,
Vasyl G. Kravets,
Alexander N. Grigorenko,
Andrei V. Kabashin,
Emmanuel Stratakis
Abstract:
Periodic plasmonic arrays making possible excitations of surface lattice resonances (SLRs) or quasi-resonant features are of great importance for biosensing and other applications. Fabrication of such arrays over a large area is typically very costly and time-consuming when performed using conventional electron beam lithography and other methods, which reduce application prospects. Here, we propos…
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Periodic plasmonic arrays making possible excitations of surface lattice resonances (SLRs) or quasi-resonant features are of great importance for biosensing and other applications. Fabrication of such arrays over a large area is typically very costly and time-consuming when performed using conventional electron beam lithography and other methods, which reduce application prospects. Here, we propose a technique of double femtosecond pulse (~ 170 fs) laser-assisted structuring of thin (~ 32 nm) Au films deposited on a glass substrate and report a single-step fabrication of homogeneous and highly ordered Au-based Laser Induced Periodic Surface Structures (LIPSS) over a large area. Our experimental results unveil the key importance of the interpulse delay as the determining factor rendering possible the homogeneity of laser induced structures and confirm that highly ordered, functional LIPSS occur solely upon double pulse irradiation under a specific interpulse delay range. A theoretical investigation complements experimental results providing remarkable insights on the structure formation mechanism. Ellipsometric measurements show that such LIPSS structures can exhibit highly valuable plasmonic features in light reflection. In particular, we observed ultranarrow resonances associated with diffraction-coupled SLRs, which are of paramount importance for biosensing and other applications. The presented data suggest that femtosecond double pulse structuring of thin metal films can serve as a valuable and low-cost tool for a large-scale fabrication of highly ordered functional elements and structures.
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Submitted 24 May, 2025; v1 submitted 6 March, 2023;
originally announced March 2023.
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Correlation of structural, nanomechanical and electrostatic properties of single and few-layers MoS2
Authors:
Benjamin J. Robinson,
Cristina E. Giusca,
Yurema Teijeiro Gonzalez,
Nicholas D. Kay,
Olga Kazakova,
Oleg V. Kolosov
Abstract:
We have decoupled the intrinsic optical and electrostatic effects arising in monolayer and few-layer molybdenum disulphide from those influenced by the flake-substrate interaction.
We have decoupled the intrinsic optical and electrostatic effects arising in monolayer and few-layer molybdenum disulphide from those influenced by the flake-substrate interaction.
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Submitted 26 April, 2018;
originally announced April 2018.
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Nanoscale Mapping of Nanosecond Time-scale Electro-Mechanical Phenomena in Graphene NEMS
Authors:
Nicholas D. Kay,
Peter D. Tovee,
Benjamin J. Robinson,
Konstantin S. Novoselov,
Oleg V. Kolosov
Abstract:
Atomically thin layers of two-dimensional (2D) materials such as graphene, MoS2 and h-BN have immense potential as sensors and electronic devices thanks to their highly desirable electronic, mechanical, optical and heat transport properties. In particular their extreme stiffness, tensile strength and low density allows for high frequency electronic devices, resonators and ultra-sensitive detectors…
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Atomically thin layers of two-dimensional (2D) materials such as graphene, MoS2 and h-BN have immense potential as sensors and electronic devices thanks to their highly desirable electronic, mechanical, optical and heat transport properties. In particular their extreme stiffness, tensile strength and low density allows for high frequency electronic devices, resonators and ultra-sensitive detectors providing realistic avenues for down-scaling electronic devices and nanoelectromechanical systems (NEMS). Whilst nanoscale morphology and electronic properties of 2D materials can be studied using existing electron or scanning probe microscopy approaches, time-dependant phenomena on the ns and shorter time-scales cannot be readily explored. Here we use the heterodyne principle to reach into this ns time-scale and create a local nanoscale probe for electrostatically induced actuation of a graphene resonator, with amplitude sensitivity down to pm range and time sensitivity in the ns range. We experimentally observed response times of 20-120 ns for resonators with beam lengths of 180 nm to 2.5 um in line with the theoretical predictions for such NEMS devices.
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Submitted 2 September, 2015;
originally announced September 2015.
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Optical properties of two-dimensional gallium chalcogenide films
Authors:
O. Del Pozo-Zamudio,
S. Schwarz,
M. Sich,
I. A. Akimov,
M. Bayer,
R. C. Schofield,
E. A. Chekhovich,
B. J. Robinson,
N. D. Kay,
O. V. Kolosov,
A. I. Dmitriev,
G. V. Lashkarev,
D. N. Borisenko,
N. N. Kolesnikov,
A. I. Tartakovskii
Abstract:
Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we p…
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Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.
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Submitted 17 March, 2015; v1 submitted 9 January, 2015;
originally announced January 2015.
