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Emergence of giant spin-orbit torque in a two-dimensional hole gas on the hydrogen-terminated diamond surface
Authors:
Fujio Sako,
Ryo Ohshima,
Yuichiro Ando,
Naoya Morioka,
Hiroyuki Kawashima,
Riku Kawase,
Norikazu Mizuochi,
Hans Huebl,
Masashi Shiraishi
Abstract:
Two-dimensional (2D) carrier systems exhibit various significant physical phenomena for electronics and spintronics, where one of the most promising traits is efficient spin-to-charge conversion stemming from their Rashba-type spin-orbit interaction. Meanwhile, a nuisance in quests of promising materials for spintronics application is that vast majority of the investigated platforms consists of ra…
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Two-dimensional (2D) carrier systems exhibit various significant physical phenomena for electronics and spintronics, where one of the most promising traits is efficient spin-to-charge conversion stemming from their Rashba-type spin-orbit interaction. Meanwhile, a nuisance in quests of promising materials for spintronics application is that vast majority of the investigated platforms consists of rare and/or toxic elements, such as Pt and Te, which hinders progress of spin conversion physics in view of element strategy and green technology. Here, we show the emergence of giant spin-orbit torque driven by 2D hole gas at the surface of hydrogen-terminated diamond, where the constituent substances are ubiquitous elements, carbon and hydrogen. The index of its spin torque efficiency at room temperature is several times greater than that of rare metal, Pt, the benchmark system/element for spin-to-charge conversion. Our finding opens a new pathway for more sustainable spintronics and spin-orbitronics applications, with efficient spin-orbit torque employing ubiquitous non-toxic elements.
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Submitted 17 November, 2024;
originally announced November 2024.
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n-Type diamond synthesized with tert-butylphosphine for long spin coherence times of perfectly aligned NV centers
Authors:
Riku Kawase,
Hiroyuki Kawashima,
Hiromitsu Kato,
Norio Tokuda,
Satoshi Yamasaki,
Masahiko Ogura,
Toshiharu Makino,
Norikazu Mizuochi
Abstract:
The longest spin coherence times for nitrogen-vacancy (NV) centers at room temperature have been achieved in phosphorus-doped n-type diamond. However, difficulty controlling impurity incorporation and the utilization of highly toxic phosphine gas in the chemical vapor deposition (CVD) technique pose problems for the growth of n-type diamond. In the present study, n-type diamond samples were synthe…
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The longest spin coherence times for nitrogen-vacancy (NV) centers at room temperature have been achieved in phosphorus-doped n-type diamond. However, difficulty controlling impurity incorporation and the utilization of highly toxic phosphine gas in the chemical vapor deposition (CVD) technique pose problems for the growth of n-type diamond. In the present study, n-type diamond samples were synthesized by CVD using tert-butylphosphine, which is much less toxic than phosphine. The unintentional incorporation of nitrogen was found to be suppressed by incrementally increasing the gas flow rates of H2 and CH$_4$. Hall measurements confirmed n-type conduction in three measured samples prepared under different growth conditions. The highest measured Hall mobility at room temperature was 422 cm$^2$/(Vs). In the sample with the lowest nitrogen concentration, the spin coherence time ($T_2$) increased to 1.62 $\pm$ 0.10 ms. Optically detected magnetic resonance spectra indicated that all of the measured NV centers were aligned along the [111] direction. This study provides appropriate CVD conditions for growing phosphorus-doped n-type diamond with perfectly aligned NV centers exhibiting long spin coherence times, which is important for the production of quantum diamond devices.
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Submitted 31 May, 2022;
originally announced May 2022.
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Momentum-resolved charge excitations in high-Tc cuprates studied by resonant inelastic x-ray scattering
Authors:
K. Ishii,
M. Hoesch,
T. Inami,
K. Kuzushita,
K. Ohwada,
M. Tsubota,
Y. Murakami,
J. Mizuki,
Y. Endoh,
K. Tsutsui,
T. Tohyama,
S. Maekawa,
K. Yamada,
T. Masui,
S. Tajima,
H. Kawashima,
J. Akimitsu
Abstract:
We report a Cu K-edge resonant inelastic x-ray scattering (RIXS) study of high-Tc cuprates. Momentum-resolved charge excitations in the CuO2 plane are examined from parent Mott insulators to carrier-doped superconductors. The Mott gap excitation in undoped insulators is found to commonly show a larger dispersion along the [pi,pi] direction than the [pi,0] direction. On the other hand, the resona…
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We report a Cu K-edge resonant inelastic x-ray scattering (RIXS) study of high-Tc cuprates. Momentum-resolved charge excitations in the CuO2 plane are examined from parent Mott insulators to carrier-doped superconductors. The Mott gap excitation in undoped insulators is found to commonly show a larger dispersion along the [pi,pi] direction than the [pi,0] direction. On the other hand, the resonance condition displays material dependence. Upon hole doping, the dispersion of the Mott gap excitation becomes weaker and an intraband excitation appears as a continuum intensity below the gap at the same time. In the case of electron doping, the Mott gap excitation is prominent at the zone center and a dispersive intraband excitation is observed at finite momentum transfer.
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Submitted 27 August, 2007;
originally announced August 2007.
