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Data cluster analysis and machine learning for classification of twisted bilayer graphene
Authors:
Tom Vincent,
Kenji Kawahara,
Vladimir Antonov,
Hiroki Ago,
Olga Kazakova
Abstract:
Twisted bilayer graphene (TBLG) has emerged as an exciting new material with tunable electronic properties ranging from superconductivity to correlated insulating phases. But current methods of fabrication and identification of TBLG are painstaking and laborious. In this work, we combine Raman spectroscopy with the Gaussian mixture model (GMM) data clustering algorithm to identify areas with parti…
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Twisted bilayer graphene (TBLG) has emerged as an exciting new material with tunable electronic properties ranging from superconductivity to correlated insulating phases. But current methods of fabrication and identification of TBLG are painstaking and laborious. In this work, we combine Raman spectroscopy with the Gaussian mixture model (GMM) data clustering algorithm to identify areas with particular twist angles, from a TBLG sample with a mixture of orientations. We present two approaches to this cluster analysis: training the GMM on Raman parameters returned by peak fits, and on full Raman spectra with dimensionality reduced by principal component analysis. In both cases we demonstrate that GMM can identify regions of distinct twist angle from within Raman datacubes. We also show that once a model has been trained, and the identified clusters labelled, the model can be reapplied to new Raman scans to assess the similarity between the materials in the new region and the testing region. This could enable high-throughput fabrication of TBLG, by allowing computerised detection of particular twist angles from automated large-area scans.
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Submitted 19 July, 2021;
originally announced July 2021.
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Dynamics of Composite Domain Walls in Multiferroics in Magnetic Field and Their Instability
Authors:
Koji Kawahara,
Hirokazu Tsunetsugu
Abstract:
We study theoretically the dynamics of composite domain walls (DW) in multiferroic material GdFeO${}_3$ driven by magnetic field $H$. Two antiferromagnetic orders of Fe and Gd spins interact Gd-ion displacement in this system with coupling $c$ at low temperatures, and we have numerically simulated the corresponding time-dependent Ginzburg-Landau equations in which magnetic field $H$ couples to Fe-…
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We study theoretically the dynamics of composite domain walls (DW) in multiferroic material GdFeO${}_3$ driven by magnetic field $H$. Two antiferromagnetic orders of Fe and Gd spins interact Gd-ion displacement in this system with coupling $c$ at low temperatures, and we have numerically simulated the corresponding time-dependent Ginzburg-Landau equations in which magnetic field $H$ couples to Fe-spin order parameter. We vary $H$ and $c$ systematically and calculate velocity $v$ and inner structure in a stationary state for magnetic DW and magneto-electric DW. DW mobility $v/H$ increases with $H$ and decreases with $c$ for both DWs, but their characteristics differ between the two. We have also studied analytically the smooth characteristics of magneto-electric DW by perturbation theory. Another finding is a splitting instability at large H. A magneto-electric DW splits into a pair of magnetic DW and electric DW when $c$ is large, while a magnetic DW splits when $c$ is small. Internal structure of composite DW deforms with increasing $c$ and $H$, and modulations in different order parameters separate in space. Their relative distances show a noticeable enhancement with approaching the splitting instability.
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Submitted 19 August, 2020;
originally announced August 2020.
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Noncommutative generalized Gibbs ensemble in isolated integrable quantum systems
Authors:
Kouhei Fukai,
Yuji Nozawa,
Koji Kawahara,
Tatsuhiko N. Ikeda
Abstract:
The generalized Gibbs ensemble (GGE), which involves multiple conserved quantities other than the Hamiltonian, has served as the statistical-mechanical description of the long-time behavior for several isolated integrable quantum systems. The GGE may involve a noncommutative set of conserved quantities in view of the maximum entropy principle, and show that the GGE thus generalized (noncommutative…
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The generalized Gibbs ensemble (GGE), which involves multiple conserved quantities other than the Hamiltonian, has served as the statistical-mechanical description of the long-time behavior for several isolated integrable quantum systems. The GGE may involve a noncommutative set of conserved quantities in view of the maximum entropy principle, and show that the GGE thus generalized (noncommutative GGE, NCGGE) gives a more qualitatively accurate description of the long-time behaviors than that of the conventional GGE. Providing a clear understanding of why the (NC)GGE well describes the long-time behaviors, we construct, for noninteracting models, the exact NCGGE that describes the long-time behaviors without an error even at finite system size. It is noteworthy that the NCGGE involves nonlocal conserved quantities, which can be necessary for describing long-time behaviors of local observables. We also give some extensions of the NCGGE and demonstrate how accurately they describe the long-time behaviors of few-body observables.
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Submitted 20 August, 2020; v1 submitted 28 February, 2020;
originally announced March 2020.
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Mechanically tunable spontaneous vertical charge redistribution in few-layer WTe2
Authors:
Zeyuan Ni,
Emi Minamitani,
Kazuaki Kawahara,
Ryuichi Arafune,
Chun-Liang Lin,
Noriaki Takagi,
Satoshi Watanabe
Abstract:
Broken symmetry is the essence of exotic properties in condensed matters. Tungsten ditelluride, WTe$_2$, exceptionally takes a non-centrosymmetric crystal structure in the family of transition metal dichalcogenides, and exhibits novel properties$^{1-4}$, such as the nonsaturating magnetoresistance$^1$ and ferroelectric-like behavior$^4$. Herein, using the first-principles calculation, we show that…
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Broken symmetry is the essence of exotic properties in condensed matters. Tungsten ditelluride, WTe$_2$, exceptionally takes a non-centrosymmetric crystal structure in the family of transition metal dichalcogenides, and exhibits novel properties$^{1-4}$, such as the nonsaturating magnetoresistance$^1$ and ferroelectric-like behavior$^4$. Herein, using the first-principles calculation, we show that unique layer stacking in WTe$_2$ generates surface dipoles with different strengths on the top and bottom surfaces in few-layer WTe$_2$. This leads to a layer-dependence for electron/hole carrier ratio and the carrier compensation responsible for the unusual magnetoresistance. The surface dipoles are tunable and switchable using the interlayer shear displacement. This could explain the ferroelectric-like behavior recently observed in atomically thin WTe$_2$ films$^4$. In addition, we reveal that exfoliation of the surface layer flips the out-of-plane spin textures. The presented results will aid in the deeper understanding, manipulation, and further exploration of the physical properties of WTe$_2$ and related atom-layered materials, for applications in electronics and spintronic devices.
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Submitted 29 October, 2018; v1 submitted 31 August, 2018;
originally announced August 2018.
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Gate-tunable spin-charge conversion and a role of spin-orbit interaction in graphene
Authors:
S. Dushenko,
H. Ago,
K. Kawahara,
T. Tsuda,
S. Kuwabata,
T. Takenobu,
T. Shinjo,
Y. Ando,
M. Shiraishi
Abstract:
The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in a single-layer graphene. Using spin pumping from yttrium iron…
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The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in a single-layer graphene. Using spin pumping from yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in a single-layer graphene. From the gate dependence of the electromotive force we showed dominance of the intrinsic over Rashba spin-orbit interaction: a long-standing question in graphene research.
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Submitted 8 April, 2016;
originally announced April 2016.
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Observation of spin-charge conversion in CVD-grown single-layer graphene
Authors:
Ryo Ohshima,
Atsushi Sakai,
Yuichiro Ando,
Teruya Shinjo,
Kenji Kawahara,
Hiroki Ago,
Masashi Shiraishi
Abstract:
Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin pumping enables observing an electromotive force produced by the inverse spin Hall effect (ISHE) of SLG. The spin Hall angle of SLG is estimated to be 6.1*10-7…
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Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin pumping enables observing an electromotive force produced by the inverse spin Hall effect (ISHE) of SLG. The spin Hall angle of SLG is estimated to be 6.1*10-7. The observed ISHE in SLG is ascribed to its non-negligible spin-orbit interaction in SLG.
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Submitted 29 October, 2014; v1 submitted 7 August, 2014;
originally announced August 2014.
