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Designing Mixed-Metal Electrocatalyst Systems for Photoelectrochemical Dinitrogen Activation
Authors:
Manpreet Kaur,
Marc Walker,
Steven Hindmarsh,
Charlotte Bolt,
Stephen York,
Yisong Han,
Martin R. Lees,
Katharina Brinkert
Abstract:
Efficient artificial photosynthesis systems are currently realized as catalyst- and surfacefunctionalized photovoltaic tandem- and triple-junction devices, enabling photoelectrochemical (PEC) water oxidation while simultaneously recycling CO2 and generating hydrogen as a solar fuel for storable renewable energy. Although PEC systems also bear advantages for the activation of dinitrogen - such as a…
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Efficient artificial photosynthesis systems are currently realized as catalyst- and surfacefunctionalized photovoltaic tandem- and triple-junction devices, enabling photoelectrochemical (PEC) water oxidation while simultaneously recycling CO2 and generating hydrogen as a solar fuel for storable renewable energy. Although PEC systems also bear advantages for the activation of dinitrogen - such as a high system tunability with respect to the electrocatalyst integration and a directly controllable electron flux to the anchoring catalyst through the adjustability of incoming irradiation - only a few PEC devices have been developed and investigated for this purpose. We have developed a series of photoelectrodeposition procedures to deposit mixed-metal electrocatalyst nanostructures directly on the semiconductor surface for light-assisted dinitrogen activation. These electrocatalyst compositions containing Co, Mo and Ru in different atomic ratios follow previously made recommendations of metal compositions for dinitrogen reduction and exhibit different physical properties. XPS studies of the photoelectrode surfaces reveal that our electrocatalyst films are to a large degree nitrogen-free after their fabrication, which is generally difficult to achieve with traditional magnetron sputtering or e-beam evaporation techniques. Initial chronoamperometric measurements of the p-InP photoelectrode coated with the Co-Mo alloy electrocatalyst show higher photocurrent densities in the presence of N2(g) than in the presence of Ar at -0.09 V vs RHE. Indications of successful dinitrogen activation have also been found in consecutive XPS studies, where both, N 1s and Mo 3d spectra, reveal evidence of nitrogen-metal interactions.
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Submitted 11 May, 2023;
originally announced May 2023.
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Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature
Authors:
Reena Yadav,
Biplab Bhattacharyya,
Animesh Pandey,
Mandeep Kaur,
R. P. Aloysius,
Anurag Gupta,
Sudhir Husale
Abstract:
Milling of 2D flakes is a simple method to fabricate nanomaterial of any desired shape and size. Inherently milling process can introduce the impurity or disorder which might show exotic quantum transport phenomenon when studied at the low temperature. Here we report temperature dependent weak antilocalization (WAL) effects in the sculpted nanowires of topological insulator in the presence of perp…
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Milling of 2D flakes is a simple method to fabricate nanomaterial of any desired shape and size. Inherently milling process can introduce the impurity or disorder which might show exotic quantum transport phenomenon when studied at the low temperature. Here we report temperature dependent weak antilocalization (WAL) effects in the sculpted nanowires of topological insulator in the presence of perpendicular magnetic field. The quadratic and linear magnetoconductivity (MC) curves at low temperature indicate the bulk contribution in the transport. A cusp feature in magnetoconductivity curves (positive magnetoresistance) at ultra low temperature and at magnetic field, less than 1T represent the WAL indicating the transport through surface states. The MC curves are discussed by using the 2D Hikami Larkin Nagaoka theory. The crossover interplay nature of positive and negative magnetoresistance observed in the MR curve at ultra low temperature. Our results indicate that transport through topological surface states (TSS) in sculpted nanowires of Bi2Te3 can be achieved at mK range and linear MR observed at 2 K could be the coexistence of electron transport through TSS and contribution from the bulk band.
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Submitted 16 November, 2020;
originally announced November 2020.
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Low temperature carrier transport mechanism and photoconductivity of WSe2
Authors:
Manjot Kaur,
Kulwinder Singh,
Ishant Chauhan,
Hardilraj Singh,
Ram K Sharma,
Ankush Vij,
Anup Thakur,
Akshay Kumar
Abstract:
This work reports the electrical transport and temperature-dependent photoconductivity in tungsten diselenide (WSe2) thin films. The electrical conductivity analysis shows the presence of the three regions with temperature variation. At lower temperatures (<190K), carriers become localized to small regions in the film due to the Mott hopping mechanism. The middle region (190 to 273 K) follows Seto…
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This work reports the electrical transport and temperature-dependent photoconductivity in tungsten diselenide (WSe2) thin films. The electrical conductivity analysis shows the presence of the three regions with temperature variation. At lower temperatures (<190K), carriers become localized to small regions in the film due to the Mott hopping mechanism. The middle region (190 to 273 K) follows Seto parameters and obtained low barrier height (0.0873 eV) may be responsible for the improved carrier mobility. At higher temperature (>273K) region, thermally activated conduction is dominated with two activation energies of ~138 meV and 98 meV. The peaks obtained in photoluminescent analysis attributes to the presence of mid-bandgap states or defect states which play an important role in the photoconductivity of WSe2. The transient photoconductivity measurements show consistent temperature-dependent behaviour. The effect of light intensity and wavelength variation on the photoconductivity of WSe2 thin films is also discussed. The photocurrent is 1.19*10-5 A at 125 K while at 350 K it was observed to be 3.12*10-4 A. The light-on/off current cycles show that the current can recover to its initial state which points to the stable and outstanding reversible properties of the WSe2 thin film device to be used in photodetector applications.
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Submitted 24 December, 2020; v1 submitted 2 November, 2020;
originally announced November 2020.
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Substrate Mediated Synthesis of Ti-Si-N Nano-and-Micro Structures for Optoelectronic Applications
Authors:
Sachin Yadav,
Alka Sharma,
Bikash Gajar,
Mandeep Kaur,
Dinesh Singh,
Sandeep Singh,
Kamlesh Kumar Maurya,
Sudhir Husale,
Vijay Narain Ojha,
Sangeeta Sahoo
Abstract:
Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is reported here. The referred TiSiN films, majorly constituted with cubic TiN phase, are enriched with crystalline nanoparticles, micro-flowers and faceted micro…
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Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is reported here. The referred TiSiN films, majorly constituted with cubic TiN phase, are enriched with crystalline nanoparticles, micro-flowers and faceted micro-crystals which possess attractive functionalities towards plasmon mediated optoelectronic applications. Reactivity of titanium to silicon nitride based dielectric topping on the substrate at high temperature plays the key role in nitride formation for the demonstrated protocol. The optoelectronic response for these morphologically enriched composite films indicates an influential role of photo-induced surface plasmon polaritons on their dc transport properties. A plasmonically tuned resistive switching, controlled by the surface morphology in association with the film thickness, is observed under light illumination. Using Drudes modified frequency dependent bulk electron scattering rates and surface mediated SPPs-electron scattering rates, a generic model is proposed for addressing unambiguously the increased device resistance in response to light. The featured synthesis process opens a new direction towards the growth of transition metal nitrides while the proposed model serves as a basic platform to understand photo-induced electron scattering mechanisms in metal.
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Submitted 29 March, 2019;
originally announced March 2019.
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Specially designed B4C/SnO2 nanocomposite for photocatalysis: traditional ceramic with unique properties
Authors:
Paviter Singh,
Gurpreet Kaur,
Kulwinder Singh,
Bikramjeet Singh,
Manpreet Kaur,
Manjot Kaur,
Unni Krishnan,
Manjeet Kumar,
Rajni Bala,
Akshay Kumar
Abstract:
Boron carbide: A traditional ceramic material shows unique properties when explored in nano-range. Specially designed boron based nanocomposite has been synthesized by reflux method. The addition of SnO2 in base matrix increase the defect states in boron carbide and shows unique catalytic properties. The calculated texture coefficient and Nelson Riley factor shows that the synthesized nanocomposit…
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Boron carbide: A traditional ceramic material shows unique properties when explored in nano-range. Specially designed boron based nanocomposite has been synthesized by reflux method. The addition of SnO2 in base matrix increase the defect states in boron carbide and shows unique catalytic properties. The calculated texture coefficient and Nelson Riley factor shows that the synthesized nanocomposite have very high defect states. Also this composite is explored for the first time for catalysis degradation of industrial used dyes. The industrial pollutants such as Novacron red and methylene blue dye degradation analysis reveal that the composite is an efficient catalyst. Degradation study shows that 1 g/L catalyst concentration of B4C/SnO2 degrade Novacron red Huntsman dye upto 97.38% approximately in 20 minutes under sunlight irradiation time. This water insoluble catalyst can be recovered and reused.
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Submitted 15 November, 2017;
originally announced November 2017.
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Ion irradiation of Fe-Fe oxide core-shell nanocluster films: Effect of interface on stability of magnetic properties
Authors:
John S. McCloy,
Weilin Jiang,
Timothy C. Droubay,
Tamas Varga,
Libor Kovarik,
Jennifer A. Sundararajan,
Maninder Kaur,
You Qiang,
Edward C. Burks,
Kai Liu
Abstract:
A cluster deposition method was used to produce films of loosely aggregated nanoclusters (NC) of Fe core-Fe3O4 shell or fully oxidized Fe3O4. Films of these NC on Si(100) or MgO(100)/Fe3O4(100) were irradiated to 10^16 Si2+/cm2 near room temperature using an ion accelerator. Ion irradiation creates structural change in the NC film with corresponding chemical and magnetic changes which depend on th…
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A cluster deposition method was used to produce films of loosely aggregated nanoclusters (NC) of Fe core-Fe3O4 shell or fully oxidized Fe3O4. Films of these NC on Si(100) or MgO(100)/Fe3O4(100) were irradiated to 10^16 Si2+/cm2 near room temperature using an ion accelerator. Ion irradiation creates structural change in the NC film with corresponding chemical and magnetic changes which depend on the initial oxidation state of the cluster. Films were characterized using magnetometry (hysteresis, first order reversal curves), microscopy (transmission electron, helium ion), and x-ray diffraction. In all cases, the particle sizes increased due to ion irradiation, and when a core of Fe is present, irradiation reduces the oxide shells to lower valent Fe species. These results show that ion irradiated behavior of the nanocluster films depends strongly on the initial nanostructure and chemistry, but in general saturation magnetization decreases slightly.
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Submitted 6 August, 2013;
originally announced August 2013.
