Silicon nanoantennas for tailoring the optical properties of MoS2 monolayers
Authors:
Danae Katrisioti,
Peter R. Wiecha,
Aurélien Cuche,
Sotiris Psilodimitrakopoulos,
Guilhem Larrieu,
Jonas Müller,
Vincent Larrey,
Bernhard Urbaszek,
Xavier Marie,
Emmanuel Stratakis,
George Kioseoglou,
Vincent Paillard,
Jean-Marie Poumirol,
Ioannis Paradisanos
Abstract:
Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a three-fold enhancement in photoluminescence and an excitation-wavelength-dependent emissi…
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Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a three-fold enhancement in photoluminescence and an excitation-wavelength-dependent emission that aligns with Mie-resonant modes. Raman spectroscopy reveals an up to 8-fold enhancement in the vibrational modes of MoS2, while second-harmonic generation exhibits a 20 to 30-fold increase in efficiency, closely correlating with the presence of the underlying nanoantennas. Our experiments and simulations quantify the tunable benefits of the near-field interactions, taking into account thin-film interference and strain-induced effects. Our findings present dielectric nanoantennas as a promising platform for tailoring linear and nonlinear optical properties in 2D materials, with potential applications in nanophotonic devices and integrated photonics.
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Submitted 4 April, 2025;
originally announced April 2025.
