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Oscillatory Hall effect from magnetoelectronic coupling in flexoelectronic silicon
Authors:
Paul C. Lou,
Ravindra G. Bhardwaj,
Anand Katailiha,
W. P. Beyermann,
Sandeep Kumar
Abstract:
The magnetoelectronic coupling can be defined as cross-domain coupling between electronic and magnetic properties, where modulation in magnetic properties changes the electronic properties. In this letter, an explicit experimental evidence of magnetoelectronic coupling is presented, which is uncovered from oscillatory Hall effect response in Hall measurement. The strain gradient in a MgO (1.8 nm)/…
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The magnetoelectronic coupling can be defined as cross-domain coupling between electronic and magnetic properties, where modulation in magnetic properties changes the electronic properties. In this letter, an explicit experimental evidence of magnetoelectronic coupling is presented, which is uncovered from oscillatory Hall effect response in Hall measurement. The strain gradient in a MgO (1.8 nm)/p-Si (~400 nm) freestanding sample leads to transfer of electrons (~5X10^18 cm^-3) from valence to conduction band due to flexoelectronic charge separation in the p-Si layer. The resulting flexoelectronic polarization gives rise to temporal magnetic moment from dynamical multiferroicity. The external magnetic field changes the net temporal magnetic moment, which causes modulations in charge carrier concentration and oscillatory Hall effect. The period of oscillatory Hall response is 1.12 T, which is attributed to the magnitude of temporal magnetic moment. The discovery of oscillatory Hall effect adds a new member to the family of Hall effects.
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Submitted 26 February, 2024;
originally announced February 2024.
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Evidence of magnetoelectronic electromagnon mediated transport in flexoelectronic heterostructures
Authors:
Anand Katailiha,
Paul C. Lou,
Ravindra G. Bhardwaj,
Ward P. Beyermann,
Sandeep Kumar
Abstract:
The superposition of atomic vibrations and flexoelectronic effect gives rise to a cross correlation between free charge carriers and temporal magnetic moment of phonons in conducting heterostructures under an applied strain gradient. The resulting dynamical coupling is expected to give rise to quasiparticle excitations called as magnetoelectronic electromagnon that carries electronic charge and te…
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The superposition of atomic vibrations and flexoelectronic effect gives rise to a cross correlation between free charge carriers and temporal magnetic moment of phonons in conducting heterostructures under an applied strain gradient. The resulting dynamical coupling is expected to give rise to quasiparticle excitations called as magnetoelectronic electromagnon that carries electronic charge and temporal magnetic moment. Here, we report experimental evidence of magnetoelectronic electromagnon in the freestanding degenerately doped p-Si based heterostructure thin film samples. These quasiparticle excitations give rise to long-distance (>100um) spin transport; demonstrated using spatially modulated transverse magneto-thermoelectric and non-local resistance measurements. The magnetoelectronic electromagnons are non-reciprocal and give rise to large magnetochiral anisotropy (0.352 A-1T-1) that diminishes at lower temperatures. The superposition of non-reciprocal magnetoelectronic electromagnons gives rise to longitudinal and transverse modulations in charge carrier density, spin density and magnetic moment; demonstrated using the Hall effect and edge dependent magnetoresistance measurements, which can also be called as inhomogeneous magnetoelectronic multiferroic effect. These quasiparticle excitations are analogues to photons where time dependent polarization and temporal magnetic moment replaces electric and magnetic field, respectively and most likely topological because it manifests topological Nernst effect. Hence, the magnetoelectronic electromagnon can potentially give rise to quantum interference and entanglement effects in conducting solid state system at room temperature in addition to efficient spin transport.
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Submitted 12 April, 2023;
originally announced April 2023.
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Topological phonons in an inhomogeneously strained silicon-6: Possible evidence of the high temperature spin superfluidity and the second sound of topological phonons
Authors:
Anand Katailiha,
Paul C. Lou,
Ravindra G. Bhardwaj,
Ward Beyermann,
Sandeep Kumar
Abstract:
The superposition of topological phonons and flexoelectronic charge separation in an inhomogeneously strain Si give rise to topological electronic magnetism of phonons. The topological electronic magnetism of phonons is also expected to give rise to stationary spin current or spin superfluidity. In this experimental study, we present possible evidence of spin superfluidity in an inhomogeneously st…
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The superposition of topological phonons and flexoelectronic charge separation in an inhomogeneously strain Si give rise to topological electronic magnetism of phonons. The topological electronic magnetism of phonons is also expected to give rise to stationary spin current or spin superfluidity. In this experimental study, we present possible evidence of spin superfluidity in an inhomogeneously strained p-Si thin films samples. The spin superfluidity is uncovered using non-local resistance measurement. A resonance behavior is observed in a non-local resistance measurement at 10 kHz and between 270 K and 281.55 K, which is attributed to the second sound. The observation of second sound and spatially varying non-local resistance phase are the evidences for spin superfluidity. The spatially varying non-local resistance with opposite phase are also observed in Pt/MgO/p-Si sample. The overall non-local responses can be treated as a standing waveform from temporal magnetic moments of the topological phonons.
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Submitted 15 October, 2021;
originally announced October 2021.
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Topological phonons in an inhomogeneously strained silicon-5: Inhomogeneous magnetoelectronic effect in a conductor
Authors:
Paul C. Lou,
Ravindra G. Bhardwaj,
Anand Katailiha,
Ward Beyermann,
Sandeep Kumar
Abstract:
The spatially inhomogeneity in a magnetic crystal give rise to electric polarization, which is known as inhomogeneous magnetoelectric effect. Similarly, an inhomogeneous magnetoelectronic effect in a conducting multiferroic material give rise to spatially inhomogeneous magnetic moment and spin distribution due to spatially inhomogeneity in the charge carrier concentration. In this study, we presen…
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The spatially inhomogeneity in a magnetic crystal give rise to electric polarization, which is known as inhomogeneous magnetoelectric effect. Similarly, an inhomogeneous magnetoelectronic effect in a conducting multiferroic material give rise to spatially inhomogeneous magnetic moment and spin distribution due to spatially inhomogeneity in the charge carrier concentration. In this study, we present experimental evidence of inhomogeneous magnetoelectronic effect in Py/p-Si layered structure. The Py/p-Si layered structure exhibit electronic multiferroicity due to superposition of flexoelectronic charge carrier doping and topological phonons. It gives rise to spatially modulations in the spin density and magnetic moment, which are discovered using the Hall effect measurement. The charge carrier density as well as type of the charge carrier are found to be a function of spatial coordinate as well as direction of magnetic field. The observed modulations can also be interpreted as incommensurate SDW with wavelength of ~142 um. The inhomogeneous magnetoelectronic effect also give rise to magnetocaloric effect, which is uncovered using thermal hysteresis in the magnetoresistance measurement. This is a first experimental evidence of inhomogeneous magnetoelectronic effect, which is electronic counterpart of the magnetoelectric effect.
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Submitted 10 October, 2021;
originally announced October 2021.
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Topological phonons in an inhomogeneously strained silicon-4: Large spin dependent thermoelectric response and thermal spin transfer torque due to topological electronic magnetism of phonons
Authors:
Ravindra G Bhardwaj,
Anand Katailiha,
Paul C. Lou,
Ward P. Beyermann,
Sandeep Kumar
Abstract:
The superposition of flexoelectronic doping and topological phonons give rise to topological electronic magnetism of phonon in an inhomogeneously strained Si in the bilayer structure with metal. In case of ferromagnetic metal and Si bilayer structure, the flexoelectronic doping will also give rise to larger spin current, which will lead to large spin to charge conversion due to topological electro…
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The superposition of flexoelectronic doping and topological phonons give rise to topological electronic magnetism of phonon in an inhomogeneously strained Si in the bilayer structure with metal. In case of ferromagnetic metal and Si bilayer structure, the flexoelectronic doping will also give rise to larger spin current, which will lead to large spin to charge conversion due to topological electronic magnetism of phonon. By applying a temperature difference to ferromagnetic metal/Si bilayer structure under an applied strain gradient, a large thermoelectric response can be generated. In this experimental study, we report a large spin dependent thermoelectric response at Ni80Fe20/Si bilayer structure. The spin dependent response is found to be an order of magnitude larger than that in Pt thin films and similar to topological insulators surface states in spite of negligible intrinsic spin-orbit coupling of Si. This large response is attributed to the flexoelectronic doping and topological electronic magnetism of phonons, which was uncovered using topological Nernst effect measurement. This alternative and novel approach of using inhomogeneous strain engineering to address both spin current density and spin to charge conversion can open a new window to the realization of spintronics and spin-caloritronics devices using metal and doped-semiconductor layered materials.
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Submitted 10 October, 2021;
originally announced October 2021.
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Flexoelectronic doping of the degenerate silicon and the correlated electron behavior
Authors:
Paul C. Lou,
Anand Katailiha,
Ravindra G. Bhardwaj,
Ward Beyermann,
Dheeraj Mohata,
Sandeep Kumar
Abstract:
In metal/degenerately doped silicon bilayer structure, the interfacial flexoelectric effect due to strain gradient leads to charge carrier transfer from metal layer to the silicon layer. This excess charge carrier concentration is called flexoelectronic doping or flexoelectronic charge transfer, which gives rise to an electronically polarized (order of magnitude larger than ferroelectric materials…
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In metal/degenerately doped silicon bilayer structure, the interfacial flexoelectric effect due to strain gradient leads to charge carrier transfer from metal layer to the silicon layer. This excess charge carrier concentration is called flexoelectronic doping or flexoelectronic charge transfer, which gives rise to an electronically polarized (order of magnitude larger than ferroelectric materials) silicon layer. In the transport measurements, the charge carrier concentration in silicon is found to increase by two orders of magnitude due to flexoelectronic doping, which changes the Fermi level and the Hall response. The flexoelectronic charge accumulation modifies the electron-electron and the electron phonon coupling, which gives rise to Mott metal-insulator transition and magnetism of phonons, respectively. The coexistence of flexoelectronic polarization and magnetism gives rise to a new class of materials called electronic multiferroics. By controlling the flexoelectronic doping, material behavior can potentially be engineered for quantum, spintronics and electronics applications in semiconductor materials.
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Submitted 1 March, 2022; v1 submitted 10 October, 2021;
originally announced October 2021.
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Topological phonons in an inhomogeneously strained silicon-2: Evidence of spin-momentum locking
Authors:
Anand Katailiha,
Paul C. Lou,
Ravindra G. Bhardwaj,
Ward P. Beyermann,
Sandeep Kumar
Abstract:
In this study, we report first experimental evidence of spin-momentum locking in the topological phonons in an inhomogeneously strained Si thin film. The spin-momentum locking in the topological phonons lead to a longitudinal spin texture or spatially inhomogeneous spin distribution in the freestanding sample structure. The spin texture was uncovered using location dependent Hall effect and planar…
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In this study, we report first experimental evidence of spin-momentum locking in the topological phonons in an inhomogeneously strained Si thin film. The spin-momentum locking in the topological phonons lead to a longitudinal spin texture or spatially inhomogeneous spin distribution in the freestanding sample structure. The spin texture was uncovered using location dependent Hall effect and planar Hall effect measurement. The charge carrier density and anomalous Hall resistance showed a linear behavior along the length of the sample. Similarly, the planar Hall resistance related with the spin dependent scattering was also found to be different at two different location along the length of the sample. The spin-momentum locking also gave rise to transverse thermal spin current and spin-Nernst magneto thermopower response, which was uncovered using angle dependent longitudinal second harmonic measurement. The magneto thermopower response was also a function of crystallography of the Si sample where the sign of the response was opposite for <110> and <100> aligned samples. The spin-momentum locking in topological phonons may give rise to large spin dependent response at and above room temperature, which can pave the way for energy efficient spintronics and spin-caloritronics devices.
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Submitted 10 October, 2021;
originally announced October 2021.
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Topological phonons in an inhomogeneously strained silicon-1: Evidence of long-distance spin transport and unidirectional magnetoresistance of phonons
Authors:
Anand Katailiha,
Ravindra G. Bhardwaj,
Paul C. Lou,
Ward P. Beyermann,
Sandeep Kumar
Abstract:
Transverse acoustic waves in an inhomogeneous medium are analogues to electromagnetic waves and will exhibit topological behavior due to the Berry gauge potential in the momentum space due to inhomogeneity. The inhomogeneous (or gradient) medium can be created using an applied strain gradient in a semiconductor thin film (silicon) since the phonon frequency and dispersion will be a function of the…
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Transverse acoustic waves in an inhomogeneous medium are analogues to electromagnetic waves and will exhibit topological behavior due to the Berry gauge potential in the momentum space due to inhomogeneity. The inhomogeneous (or gradient) medium can be created using an applied strain gradient in a semiconductor thin film (silicon) since the phonon frequency and dispersion will be a function of the local strain along the strain gradient direction. As a consequence, topological phonon mediated spin and heat transport can be engineered in the semiconductor thin films. Here, we present evidence of a long-distance (100 um) spin transport in the freestanding Si thin film sample under an applied strain gradient using transverse spin-Nernst effect measurement. The long-distance spin transport was attributed to the topological spin-Hall effect of phonons in an inhomogeneous medium. The inhomogeneous medium was validated using unidirectional magnetoresistance of phonons where the magnitude of the coefficient of the non-reciprocal response at room temperature was as large as reported in the BiTeBr at low temperatures. The topological phonons also manifested the topological Nernst effect. This work not only enhances the current understanding of inhomogeneous systems but also lays the foundation of the topological and spin phononics.
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Submitted 10 October, 2021;
originally announced October 2021.
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Large Magnetic Moment in Flexoelectronic Silicon at Room Temperature
Authors:
Paul C. Lou,
Anand Katailiha,
Ravindra G. Bhardwaj,
Ward P. Beyermann,
Dominik M. Juraschek,
Sandeep Kumar
Abstract:
Time-dependent rotational electric polarizations have been proposed to generate temporally varying magnetic moments, for example, through a combination of ferroelectric polarization and optical phonons. This phenomenon has been called dynamical multiferroicity, but explicit experimental demonstrations have been elusive to date. Here, we report the detection of a temporal magnetic moment as high as…
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Time-dependent rotational electric polarizations have been proposed to generate temporally varying magnetic moments, for example, through a combination of ferroelectric polarization and optical phonons. This phenomenon has been called dynamical multiferroicity, but explicit experimental demonstrations have been elusive to date. Here, we report the detection of a temporal magnetic moment as high as 1.2 mu_B/atom in charge-doped thin film of silicon under flexural strain. We demonstrate that the magnetic moment is generated by a combination of electric polarization arising from a flexoelectronic charge separation along the strain gradient and the deformation potential of phonons. The effect can be controlled by adjusting the external strain gradient, doping concentration and dopant, and can be regarded as a dynamical multiferroic effect involving flexoelectronics polarization instead of ferroelectricity. The discovery of a large magnetic moment in silicon may enable the use of non-magnetic and non-ferroelectric semiconductors in various multiferroic and spintronic applications.
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Submitted 23 March, 2021;
originally announced March 2021.
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Large spin-Hall effect in Si at room temperature
Authors:
Paul C. Lou,
Anand Katailiha,
Ravindra G. Bhardwaj,
Tonmoy Bhowmick,
W. P. Beyermann,
Roger K. Lake,
Sandeep Kumar
Abstract:
Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse spin-Hall effect (spin current detection). Here, we undertake current, magnetic field, crystallography dependent magnetoresistance and magneto thermal transport…
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Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse spin-Hall effect (spin current detection). Here, we undertake current, magnetic field, crystallography dependent magnetoresistance and magneto thermal transport measurements to study the spin transport behavior in freestanding Si thin films. We observe a large spin-Hall magnetoresistance in both p-Si and n-Si at room temperature and it is an order of magnitude larger than that of Pt. One explanation of the unexpectedly large and efficient spin-Hall effect is spin-phonon coupling instead of spin-orbit coupling. The macroscopic origin of the spin-phonon coupling can be large strain gradients that can exist in the freestanding Si films. This discovery in a light, earth abundant and centrosymmetric material opens a new path of strain engineering to achieve spin dependent properties in technologically highly-developed materials.
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Submitted 1 April, 2020;
originally announced April 2020.
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Flexoelectric effect mediated spin-to-charge conversion at amorphous-Si thin film interfaces
Authors:
Ravindra G Bhardwaj,
Anand Katailiha,
Paul C. Lou,
W. P. Beyermann,
Sandeep Kumar
Abstract:
Interfacial spin to charge conversion arises due to an electric potential perpendicular to the interface. The electric potential can be artificially induced, for example, using ferroelectric and piezoelectric thin films at the interface. An alternate way to induce the electric potential could be flexoelectric field. The flexoelectricity can be observed in all the material that either have or lack…
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Interfacial spin to charge conversion arises due to an electric potential perpendicular to the interface. The electric potential can be artificially induced, for example, using ferroelectric and piezoelectric thin films at the interface. An alternate way to induce the electric potential could be flexoelectric field. The flexoelectricity can be observed in all the material that either have or lack inversion symmetry, additionally no large gate bias is needed. In this experimental study, we report large spin to charge conversion (spin-Hall angle- 0.578) at Ni80Fe20/amorphous-Si interfaces attributed to flexoelectricity mediated Rashba spin-orbit coupling. The flexoelectricity at the interface also gave rise to interlayer spin-acoustic phonon or flexo-magnetoelastic coupling. In addition to spin-charge conversion, the strained interfaces also led to almost three-fold increase in anomalous Nernst effect. This strain engineering for spin dependent thermoelectric behavior at room temperature opens a new window to the realization of spintronics and spin-caloritronics devices.
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Submitted 19 June, 2020; v1 submitted 6 January, 2020;
originally announced January 2020.
