Spectral analysis of the magneto-optical response in valley polarized Pb$_{1-x}$Sn$_x$Se
Authors:
Xiaoqi Ding,
Jiashu Wang,
Mykhaylo Ozerov,
Sara Bey,
Muhsin Abdul Karim,
Seul-Ki Bac,
Xinyu Liu,
Badih A. Assaf,
Yi-Ting Hsu,
Xiao Li
Abstract:
Since the last century, considerable efforts have been devoted to the study of valley-degenerate narrow gap semiconductors, such as the Pb$_{1-x}$Sn$_x$Se alloy. This material possesses band edges at the $L$-points of their Brillouin zone, yielding a valley degeneracy of four. However, in (111)-oriented films, it is still not fully understood how differences between the longitudinal valley, orient…
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Since the last century, considerable efforts have been devoted to the study of valley-degenerate narrow gap semiconductors, such as the Pb$_{1-x}$Sn$_x$Se alloy. This material possesses band edges at the $L$-points of their Brillouin zone, yielding a valley degeneracy of four. However, in (111)-oriented films, it is still not fully understood how differences between the longitudinal valley, oriented along the growth axis, and the oblique valleys, oriented at an angle with respect to that axis, appear in infrared magneto-optical spectroscopy. In this work, we report a magneto-optical study on this family of alloys, focusing on an anomaly in the interband transition of the absorption strength ratio between longitudinal and oblique valleys under a magnetic field applied along the [111] direction. Based on the Mitchell-Wallis model, we provide a theoretical fit for the experimental transmission data, which quantitatively explains the spectral shape of the data at magnetic fields as high as 35T. In particular, we attribute this anomalous absorption strength variation to the carrier density difference between the two types of valleys as well as the field-dependent multiple-beam interference or the Fabry-Pérot interference. Our analysis also allows for the extraction of the real and imaginary parts of the dielectric function.
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Submitted 9 May, 2025; v1 submitted 18 June, 2024;
originally announced June 2024.
MBE growth of axion insulator candidate EuIn2As2
Authors:
Muhsin Abdul Karim,
Jiashu Wang,
David Graf,
Kota Yoshimura,
Sara Bey,
Tatyana Orlova,
Maksym Zhukovskyi,
Xinyu Liu,
Badih A. Assaf
Abstract:
The synthesis of thin films of magnetic topological materials is necessary to achieve novel quantized Hall effects and electrodynamic responses. EuIn2As2 is a recently predicted topological axion insulator that has an antiferromagnetic ground state and an inverted band structure, but that has only been synthesized and studied as a single crystal. We report on the synthesis of c-axis oriented EuIn2…
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The synthesis of thin films of magnetic topological materials is necessary to achieve novel quantized Hall effects and electrodynamic responses. EuIn2As2 is a recently predicted topological axion insulator that has an antiferromagnetic ground state and an inverted band structure, but that has only been synthesized and studied as a single crystal. We report on the synthesis of c-axis oriented EuIn2As2 films on sapphire substrates by molecular beam epitaxy. By carefully tuning the substrate temperature during growth, we stabilize the Zintl phase of EuIn2As2 expected to be topologically non-trivial. The magnetic properties of these films reproduce those seen in single crystals, but their resistivity is enhanced when grown at lower temperatures. We additionally find that the magnetoresistance of EuIn2As2 is negative even up to fields as high as 31T. while it is highly anisotropic at low fields, it becomes nearly isotropic at high magnetic fields above 5T. Overall, the transport characteristics of EuIn2As2 appear similar to those of chalcogenide topological insulators, motivating the development of devices to gate tune the Fermi energy and reveal topological features in quantum transport.
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Submitted 13 September, 2023; v1 submitted 17 July, 2023;
originally announced July 2023.
